JPH01271728A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH01271728A JPH01271728A JP63101766A JP10176688A JPH01271728A JP H01271728 A JPH01271728 A JP H01271728A JP 63101766 A JP63101766 A JP 63101766A JP 10176688 A JP10176688 A JP 10176688A JP H01271728 A JPH01271728 A JP H01271728A
- Authority
- JP
- Japan
- Prior art keywords
- switching
- liquid crystal
- elements
- nonlinear resistance
- mim
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000012212 insulator Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は液晶表示装置のスイッチング用非線形抵抗2端
子素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a nonlinear resistance two-terminal element for switching of a liquid crystal display device.
[従来の技術]
アクティブマトリックス型液晶表示装置におけるスイッ
チング用非線形抵抗2端子素子であるMIM、MSIは
それぞれ2つの電極に挟まれた絶縁層、Semi=In
suj2atorが高電界で電流を流す性質を利用して
おり非線形な電流−電圧特性のメカニズムは5chot
tkyやPOOI2e−Frenkej2機構等によっ
て説明されている。これらの従来の素子構造を第2図、
第3図に示す。従来のMIMは下部電極Taをドライエ
ツチングにて形成後(第2図−2)陽極酸化等により絶
縁層を形成(第2図−4)、上部電極CrC第2図−3
)で画素電極との導通をとっていた。この際上部電極に
Crを用いている理由は下部電極Taや絶縁層のTaO
xを侵さずパターン形成できることと、T a / T
a Ox / CrのMIM素子の極性による電流−
電圧特性の差、すなわち極性差がTa以外の導体中で比
較的小さく、電負抵抗も小さいためである。また従来の
MSIは画素電極ITOをエッチパターニング後スパッ
タやCVDにてSemi−Insulatorを形成、
その上に走査電極Crを形成していた。走査電極にCr
を用いる理由は前述MIMと同様、製造プロセス上の問
題、素子特性の極性差、電気抵抗である。[Prior Art] MIM and MSI, which are nonlinear resistance two-terminal elements for switching in active matrix liquid crystal display devices, each have an insulating layer sandwiched between two electrodes, Semi=In
The mechanism of the nonlinear current-voltage characteristic of suj2ator, which utilizes the property of flowing current in a high electric field, is shown in 5 shots.
This is explained by the tky, POOI2e-Frenkej2 mechanism, etc. These conventional device structures are shown in Figure 2.
It is shown in Figure 3. In the conventional MIM, after forming the lower electrode Ta by dry etching (Fig. 2-2), forming an insulating layer by anodizing etc. (Fig. 2-4), and forming the upper electrode CrC by dry etching (Fig. 2-3).
) to establish continuity with the pixel electrode. At this time, the reason why Cr is used for the upper electrode is that the lower electrode Ta and the insulating layer are made of TaO.
It is possible to form a pattern without damaging x, and T a / T
a Current depending on polarity of Ox/Cr MIM element -
This is because the difference in voltage characteristics, that is, the difference in polarity, is relatively small among conductors other than Ta, and the negative resistance is also small. In addition, in conventional MSI, after etching and patterning the pixel electrode ITO, a Semi-Insulator is formed by sputtering or CVD.
A scanning electrode Cr was formed thereon. Cr on the scanning electrode
The reasons for using this method, as with the MIM described above, are problems in the manufacturing process, polarity differences in element characteristics, and electrical resistance.
[発明が解決しようとする課題]
しかし従来の技術ではMIMの絶縁層、MSIのセミ・
インシュレーク−層を挾む2導体がそれぞれ異なる材質
であるため必然的に電流−電圧特性の極性差が生じてし
まい液晶表示装置の表示品質を劣化させるという問題点
があった。従来技術で述べた様に絶縁層、セミ・インシ
ュレーター層を挟む電極材料を適当に選択しても極性差
を無くすことはできない。第4図(A)、(B)に示す
様にMSI、MIMともに電圧15V印加時1.5〜2
倍程度素子抵抗が極性差により異なることがわかる。[Problem to be solved by the invention] However, in the conventional technology, the insulating layer of MIM and the semi-
Since the two conductors sandwiching the insulation layer are made of different materials, a polarity difference in current-voltage characteristics inevitably occurs, resulting in a problem in that the display quality of the liquid crystal display device is degraded. As described in the prior art, even if the electrode materials sandwiching the insulating layer and the semi-insulator layer are appropriately selected, the polarity difference cannot be eliminated. As shown in Figure 4 (A) and (B), both MSI and MIM are 1.5 to 2 when a voltage of 15 V is applied.
It can be seen that the element resistance varies by about a factor of two depending on the polarity difference.
そこで本発明はこのような問題点を解決するものであっ
てその目的とするところは液晶表示装置において電流−
電圧特性の極性差のないスイッチング用非線形抵抗2端
子素子を得ることにある。Therefore, the present invention is intended to solve these problems, and its purpose is to reduce current in a liquid crystal display device.
The object of the present invention is to obtain a switching nonlinear resistance two-terminal element with no polarity difference in voltage characteristics.
[課題を解決する為の手段]
複数の行電極と対向基板上にこれに交差して配置された
複数の列電極を備え、これら両電極の交差部にマトリッ
クス状に形成された画素部にスイッチング用非線形抵抗
素子と液晶を電気的に直列に接続して配置したアクティ
ブマトリックス型液晶表示装置において前記スイッチン
グ用非線形抵抗素子がMIM、MSIの2端子素子であ
り、かつ素子間に中間層を設けることによりそれぞれの
絶縁層、セミ・インシュレーター層を挟む2導体が同一
材料であることを特徴としている。[Means for Solving the Problems] A plurality of row electrodes and a plurality of column electrodes are arranged on a counter substrate to intersect with each other, and switching is performed in a pixel portion formed in a matrix at the intersection of these two electrodes. In an active matrix liquid crystal display device in which a nonlinear resistance element for switching and a liquid crystal are arranged electrically connected in series, the nonlinear resistance element for switching is a two-terminal element of MIM and MSI, and an intermediate layer is provided between the elements. The feature is that the two conductors sandwiching each insulating layer and semi-insulator layer are made of the same material.
[実施例−1]
本発明実施例−1を第1図に示す。Baホウケイ酸ガラ
ス上にまず下部電極材料であるCrを3500人スパッ
クし村上氏液を用いてウェットエツチング、電極を形成
する。次にS i 022500人バイアススパックし
中間層(第1図−6)を形成後CF 4+02ガスを用
いたドライエツチングにて中間層に5μm0のコンタク
トホールをあける。この際下部電極Crはドライエツチ
ングされずストッパーとなる。次に大気中にて500℃
XIHrの熱酸化を行ない約500人程度の熱酸化膜を
コンタクトホール部に形成する(第1図−4)。さらに
Crを1500人スパッタし再び村上氏液を用い上部電
極を形成する(第1図−3)。この時下部電極のCrは
SiO□の中間層にてカバレジよく被覆されているため
村上氏液にて全く侵されない。次に上部電極上に画素電
極をITOにて形成した。この様に上下電極を同じ材質
にて形成したMIM素子の電流−電圧特性を第4図−(
C)に示す。極性差が確認できなく、かつ傾きが若干急
峻になっていることがわかる。[Example-1] Example-1 of the present invention is shown in FIG. First, 3,500 pieces of Cr, which is a lower electrode material, is spun onto Ba borosilicate glass, and then wet etched using Murakami's solution to form an electrode. Next, after forming an intermediate layer (FIG. 1-6) by bias spacking with Si022500, a contact hole of 5 μm0 is made in the intermediate layer by dry etching using CF4+02 gas. At this time, the lower electrode Cr is not dry etched and serves as a stopper. Then in the atmosphere at 500℃
A thermal oxidation film of about 500 layers is formed in the contact hole by thermal oxidation of XIHr (FIG. 1-4). Further, 1,500 Cr was sputtered and the upper electrode was formed again using Murakami's solution (Fig. 1-3). At this time, since the Cr of the lower electrode is well covered with the SiO□ intermediate layer, it is not attacked by Murakami's solution at all. Next, a pixel electrode was formed using ITO on the upper electrode. Figure 4-(
Shown in C). It can be seen that no polarity difference can be confirmed and the slope is slightly steeper.
尚、本発明実施例ではMIM素子の上下電極にCr、中
間層にSiO□スパッタ膜を用いたが上部電極をパター
ニングする際用いるエツチング液、ドライエツチングガ
ス等により中間層が侵されなければどの様な材質の組み
合わせでも良い。In the embodiment of the present invention, Cr was used for the upper and lower electrodes of the MIM element, and a SiO□ sputtered film was used for the intermediate layer. A combination of materials may also be used.
例えば上下電極のITOと中間層のSiO□やA R2
0a 、上下電極の/lと中間層のSiO□やTa20
5、SiNx、上下電極のCuやNiと中間層のS i
O2やAρ203、Ta 20 g等々。また中間層
はスパック膜でなくても良く、CVD膜や金属アルコキ
シド等の塗布焼成膜など下部電極をカバレジ良く被覆で
きるものであれば何でも良い。For example, ITO for the upper and lower electrodes and SiO□ or AR2 for the intermediate layer.
0a, /l of the upper and lower electrodes and SiO□ or Ta20 of the intermediate layer
5. SiNx, Cu and Ni in the upper and lower electrodes and Si in the intermediate layer
O2, Aρ203, Ta20g, etc. Further, the intermediate layer does not need to be a spuck film, and may be any material that can cover the lower electrode with good coverage, such as a CVD film or a coated and fired film of metal alkoxide.
[実施例−2]
本発明実施例−2を第5図に示す。まず3500A厚の
走査電極をITOにて形成し、その上部にSiNxを6
00人スパック形成する。SiNxのパターニングはC
F4系のガスを用いドライエツチングにて行なった。次
に実施例−1と同様に中間層を設は孔あけした。この時
中間層はA氾のアルコキシドの塗布焼成膜であり、膜厚
は3000人、孔あけはリン酸水溶液を用いて行なった
。次にITOを再び1500人スパック後パターニング
し画素電極を形成した(第5図−5)。[Example-2] Example-2 of the present invention is shown in FIG. First, a scan electrode with a thickness of 3500A was formed using ITO, and SiNx was placed on top of it.
00 people form spac. The patterning of SiNx is C
Dry etching was performed using F4 gas. Next, holes were formed in the intermediate layer in the same manner as in Example-1. At this time, the intermediate layer was a coated and fired film of alkoxide of A flood, the film thickness was 3000, and the holes were made using a phosphoric acid aqueous solution. Next, ITO was spun again for 1,500 times and patterned to form a pixel electrode (Fig. 5-5).
この様に上下電極を同じ材質にて形成したMSI素子の
電流−電圧特性を第4図−(D)に示す。The current-voltage characteristics of the MSI element in which the upper and lower electrodes are made of the same material are shown in FIG. 4-(D).
実施例−1と同様極性差がなく、かつ傾きが若干急峻に
なっている。As in Example-1, there is no polarity difference, and the slope is slightly steeper.
尚、本発明実施例ではMSI素子の上下電極にITO1
中間層にAc103を用いたが前述した様に上部電極を
パターニングする際用いるエツチング液、ドライエツチ
ングガス等により中間層が侵されなければどの様な材質
の組み合わせでも良い。In addition, in the embodiment of the present invention, ITO1 is used for the upper and lower electrodes of the MSI element.
Although Ac103 is used for the intermediate layer, as described above, any combination of materials may be used as long as the intermediate layer is not attacked by the etching solution, dry etching gas, etc. used when patterning the upper electrode.
[発明の効果]
以上述べた様に発明によれば複数の行電極と対向基板上
にこれに交差して配置された複数の列電極を備え、これ
ら両電極の交差部にマトリックス状に形成された画素部
にスイッチング用非線形抵抗素子と液晶を電気的に直列
に接続して配置したアクティブマトリックス型液晶表示
装置において前記スイッチング用非線形抵抗素子がMI
M、MSIの2端子素子であり、かつ素子間に中間層を
設けることで、それぞれの絶縁層、S e m i −
In5uj2ator層を挟む2導体を同一材料とする
ことにより極性差のない電流−電圧特性を持つMIM、
MSI素子を得ることができた。これにより、表示のチ
ラッキが無(なるなど画質の向上が達成できた。更に電
流−電圧特性の急峻さも改善されたためコントラストが
向上し1/700デユーテイで液晶パネルを駆動しても
クロストークを生じないという効果を有している。[Effects of the Invention] As described above, according to the invention, a plurality of row electrodes and a plurality of column electrodes are arranged on a counter substrate to intersect therewith, and a matrix is formed at the intersection of these two electrodes. In an active matrix liquid crystal display device in which a nonlinear resistance element for switching and a liquid crystal are electrically connected in series in a pixel portion, the nonlinear resistance element for switching is connected to an MI.
M, MSI two-terminal element, and by providing an intermediate layer between the elements, each insulating layer, Se mi -
MIM has current-voltage characteristics with no polarity difference by using the same material for the two conductors sandwiching the In5uj2ator layer,
We were able to obtain an MSI device. As a result, we were able to improve the image quality by eliminating flickering in the display. Furthermore, the steepness of the current-voltage characteristics was also improved, which improved contrast and caused crosstalk even when driving the liquid crystal panel at 1/700 duty. It has the effect that there is no
第1図は本発明実施例−1を示すMIM素子断面図であ
る。第2図、第3図は従来のMIM、MSI素子断面図
である。第4図は本発明実施例と従来のMSl、MIM
素子の特性を示す電流−電圧特性図である。第5図は本
発明実施例−2を示すMSI素子断面図。
l・・・基板
2・・・下部電極
3・・・上部電極
4・・・絶縁層
5・・・画素電極
6・・・中間層
7・・・セミ・インシュレーター
8・・・走査電極
以上
出願人 セイコーエプソン株式会社
代理人 弁理士 銘木 喜三部(他1名)箆1図
箋2図
第3図FIG. 1 is a sectional view of an MIM element showing Example-1 of the present invention. FIGS. 2 and 3 are cross-sectional views of conventional MIM and MSI elements. Figure 4 shows the embodiment of the present invention and conventional MSI, MIM.
FIG. 3 is a current-voltage characteristic diagram showing the characteristics of the element. FIG. 5 is a sectional view of an MSI element showing Example-2 of the present invention. l...Substrate 2...Lower electrode 3...Upper electrode 4...Insulating layer 5...Pixel electrode 6...Intermediate layer 7...Semi-insulator 8...Scanning electrode and above Applications Person: Seiko Epson Co., Ltd. agent, patent attorney, Meiki Kisanbe (and 1 other person), 1 stick, 2 paper sheets, 2 drawings, 3 drawings
Claims (1)
た複数の列電極を備え、これら両電極の交差部にマトリ
ックス状に形成された画素部にスイッチング用非線形抵
抗素子と液晶を電気的に直列に接続して配置したアクテ
ィブマトリックス型液晶表示装置において前記スイッチ
ング用非線形抵抗素子がMIM、MSIの2端子素子で
あり、かつ素子間に中間層を設けることによりそれぞれ
の絶縁層、Semi−Insulator層を挟む2導
体が同一材料であることを特徴とする液晶表示装置。It is equipped with a plurality of row electrodes and a plurality of column electrodes arranged on a counter substrate so as to intersect with these electrodes, and a nonlinear resistance element for switching and a liquid crystal are electrically connected to a pixel section formed in a matrix at the intersection of these two electrodes. In an active matrix type liquid crystal display device, the switching nonlinear resistance element is a two-terminal element such as MIM or MSI, and by providing an intermediate layer between the elements, each insulating layer, Semi-Insulator A liquid crystal display device characterized in that two conductors sandwiching a layer are made of the same material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63101766A JPH01271728A (en) | 1988-04-25 | 1988-04-25 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63101766A JPH01271728A (en) | 1988-04-25 | 1988-04-25 | Liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01271728A true JPH01271728A (en) | 1989-10-30 |
Family
ID=14309348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63101766A Pending JPH01271728A (en) | 1988-04-25 | 1988-04-25 | Liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01271728A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5299040A (en) * | 1990-06-13 | 1994-03-29 | Nec Corporation | Metal-insulator-metal type active matrix liquid crystal display free from image sticking |
KR100458122B1 (en) * | 2001-08-28 | 2004-11-20 | 전자부품연구원 | Method for manufacturing a ductile mim device of lcd |
KR100954909B1 (en) * | 2007-12-26 | 2010-04-27 | 주식회사 동부하이텍 | Metal Insulator Metal capacitor and manufacturing method of metal insulator metal capacitor |
-
1988
- 1988-04-25 JP JP63101766A patent/JPH01271728A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5299040A (en) * | 1990-06-13 | 1994-03-29 | Nec Corporation | Metal-insulator-metal type active matrix liquid crystal display free from image sticking |
KR100458122B1 (en) * | 2001-08-28 | 2004-11-20 | 전자부품연구원 | Method for manufacturing a ductile mim device of lcd |
KR100954909B1 (en) * | 2007-12-26 | 2010-04-27 | 주식회사 동부하이텍 | Metal Insulator Metal capacitor and manufacturing method of metal insulator metal capacitor |
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