JPH0321099B2 - - Google Patents
Info
- Publication number
- JPH0321099B2 JPH0321099B2 JP60282734A JP28273485A JPH0321099B2 JP H0321099 B2 JPH0321099 B2 JP H0321099B2 JP 60282734 A JP60282734 A JP 60282734A JP 28273485 A JP28273485 A JP 28273485A JP H0321099 B2 JPH0321099 B2 JP H0321099B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- semiconductor substrate
- conductivity type
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282734A JPS62143454A (ja) | 1985-12-18 | 1985-12-18 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60282734A JPS62143454A (ja) | 1985-12-18 | 1985-12-18 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62143454A JPS62143454A (ja) | 1987-06-26 |
| JPH0321099B2 true JPH0321099B2 (OSRAM) | 1991-03-20 |
Family
ID=17656350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60282734A Granted JPS62143454A (ja) | 1985-12-18 | 1985-12-18 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62143454A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0548020A (ja) * | 1991-08-12 | 1993-02-26 | Mitsubishi Electric Corp | 半導体集積回路 |
-
1985
- 1985-12-18 JP JP60282734A patent/JPS62143454A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62143454A (ja) | 1987-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |