JPH03209439A - Manufacture of electrooptical device - Google Patents

Abstract

PURPOSE:To uniformize picture display by controlling the amount of reactive gas corresponding to a resistance value from the terminal part of a wiring electrode, executing reactive sputtering and accumulating a base material. CONSTITUTION:A transparent substrate 21 is made of normal glass such as soda glass, etc., and a transparent picture element electrode 22 is deposited on the whole surface of the transparent substrate 21. A wiring electrode 24 is composed of an amorphas material with silicone as a main component and using the target of silicon monocrystal or silicon multicrystal and algon gas including nitrogen gas, a silicon nitriding film almost not including hydrogen is deposited according to a reactive sputtering method by a longitudinal passage type magnetron sputtering device. In such a case, with the silicon as the target, the amount of the reactive gas is controlled corresponding to the resistance value from the terminal part of the wiring electrode 24, the reactive sputtering is executed and a base a-Si material is deposited. Thus, the picture display is made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention is directed to a large number of pixels used in displays for personal computers, displays for hand belt computers, display televisions for various measuring instruments, shutters for printers, etc. The present invention relates to a method of manufacturing an electro-optical device having the present invention.

[Summary of the Invention] The present invention is an electro-optical device having a nonlinear resistance element using a-Si as a base material and a switching element such as TPT, in which silicon is targeted and the resistance value from the terminal part of a wiring electrode is By adjusting the amount of reactive gas and performing reactive sputtering to deposit the base-me Si material, an electro-optical device with a uniform screen display can be obtained, and gradation display and full-color display can be easily achieved, resulting in high image quality. This makes it possible to provide an electro-optical device.

[Prior Art] We have developed a nonlinear resistance element for an electro-optical device using a silicon nitride film, a silicon oxide film, a silicon nitride oxide film, or a silicon carbide film as a nonlinear resistance element, or an a-Si
We have developed TFT.

These a-Si paste films have been formed with as uniform a composition as possible on the upper surface of the same substrate using a plasma CVD device or a sputtering device.

[Problem to be Solved by the Invention 1] In recent years, as electro-optical devices using liquid crystals have become larger in capacity and have higher image quality, it has become essential to lengthen and miniaturize wiring electrodes. The resistance of a wiring electrode increases in proportion to the distance from the terminal, or as the width of the electrode becomes narrower and longer, its value becomes thicker (as a result, the scanning waveform and data waveform are rounded, resulting in a voltage drop. This results in uneven display within one screen.

The present invention targets silicon in an electro-optical device having a switching element such as a nonlinear resistance element or TFT using a-Si as a base material, and the amount of reactive gas is An electro-optical device with a uniform screen display can be obtained by adjusting the irradiance and depositing a base-me Si material by performing reactive sputtering.

[Means for Solving the Problems] The electro-optical device of the present invention solves the above-mentioned problems, and is a method for manufacturing an electro-optical device using a switching element made of a-Si as a base material. In order to obtain an electro-optical device with a uniform screen display, the target is a base-me Si material, which is deposited by reactive sputtering by adjusting the amount of reactive gas according to the resistance value from the terminal part of the wiring electrode. This is what I did.

[Operation J] As mentioned above, in an electro-optical device having a nonlinear resistance element using a-Si as a base material or a switching element such as TPT, silicon is targeted and the reactivity is determined according to the resistance value from the terminal part of the wiring electrode. By adjusting the amount of gas and depositing the base a=Si material by reactive sputtering, an electro-optical device with a uniform screen display can be obtained, and high image quality can be achieved by facilitating gradation display and full color display. It becomes an electro-optical device.

[Example] Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1(A) is a plan view of a pixel electrode structure of an embodiment to which the present invention is applied, and FIG. 1(B) is a sectional view of a nonlinear resistance element.

FIG. 2(A) is a perspective view showing an embodiment of a substrate on which a nonlinear resistance element of a liquid crystal display device according to the present invention is formed;
Only one pixel is shown in an enlarged manner, and the liquid crystal layer, the opposing substrate for sealing the liquid crystal, the deflection plate, etc. are omitted for the sake of simplicity. FIG. 2(B) is a diagram clearly showing one pixel of the vertical cross-sectional structure of the liquid crystal display device according to the present invention.

FIG. 3 shows a circuit diagram of a liquid crystal display device using the nonlinear resistance element of the present invention. In FIG. 3, the transparent electrodes 32 in this embodiment are 480 scanning electrodes, and the 31 wiring electrodes are 640 data electrodes, and they are driven by time-division driving in 480 divisions.

In FIG. 2(A), 21 is a transparent substrate, which is made of ordinary glass such as soda glass. Reference numeral 22 denotes a transparent pixel electrode, in which an indium tin oxide film (TTO) is formed on a transparent base by means of magnetron sputtering, vapor deposition, etc. Approximately 100 to 500 people were deposited on the entire surface of 'ff121, and then patterned into a predetermined shape by photo-etching. 24 is an amorphous material whose main component is silicon, and using a silicon single crystal or silicon polycrystal target, about 5
A silicon nitride film containing approximately 500 to 1,500 hydrogen atoms was deposited by a reactive sputtering method using an argon gas containing ~15% and a vertical pass-through magnetron sputtering apparatus. In addition, in this example, as shown in FIG. 4, the direction in which the substrate advances is perpendicular to the line of the #1 electrode, and the diameter of the hole of the Nisso gas outlet is made larger as it approaches the terminal portion. The silicon nitride film was formed by reducing the pitch of the silicon nitride film closer to the terminal portion so that the amount of nitrogen blown out increased closer to the terminal portion. As a result, the composition of the silicon nitride film became richer in silicon as the distance from the terminal portion increased. Reference numeral 13 denotes a wiring electrode constituting one side of the matrix electrode 1. In this embodiment, a nonlinear resistance thin film 1 made of aluminum silicon or chromium metal is used.
4 in the same chamber or in another chamber,
Approximately 10
00 to 8,000 people deposited. Next, the metal wiring electrode 13 is patterned into a predetermined shape by photoetching. Thereafter, the nonlinear resistance thin film 14 was patterned into a predetermined shape by photoetching.

FIG. 2(B) is a longitudinal sectional view of a liquid crystal display device according to the present invention. Reference numeral 26 denotes a liquid crystal layer, which has a thickness of 5 to 7 LLm and is made of twisted nematic material. 25 is an alignment film made of polyimide material considering dielectric constant and resistance;
A transparent conductive film (ITo) 7 constitutes one electrode group of the matrix electrodes. Further, 28 is a deflection plate.

When comparing the liquid crystal display device according to the present invention and the conventional liquid crystal display device, there is a noticeable difference in screen display. A voltage drop phenomenon due to resistance appears along the line, and as the drive voltage is gradually increased from 0 port, the display starts from the terminal area. In particular, in the case where chromium was used as the wiring electrode, there was a difference of 1 to 2 V in voltage level at the beginning of display between the terminal portion and the pixel farthest from the terminal portion.

However, in the liquid crystal display device according to the present invention, even if the voltage drops due to the resistance of the wiring electrodes, the voltage drop is compensated for by changing the composition ratio of the nonlinear resistive thin film and lowering the threshold characteristics of the nonlinear resistive element. Therefore, when the drive voltage was gradually increased from OV, the screen began to display uniformly throughout.

[Effects of the Invention] As explained above, if an electro-optical device is manufactured by the method according to the present invention, an electro-optical device with a uniform screen display can be obtained, and gradation display and full-color display can be easily achieved, resulting in high quality An electro-optical device with high image quality can be obtained.

[Brief explanation of drawings]

FIG. 1(A) is a plan view of a pixel electrode showing an embodiment of the present invention, FIG. 1(B) is a cross-sectional view of a nonlinear resistance element, and FIG.
) and (B) are respectively a perspective view of the electrode structure of the substrate and a vertical cross-sectional view of the liquid crystal display device, FIG. 3 is a circuit diagram of a liquid crystal display device using a nonlinear resistance element, and FIG. 4 shows an embodiment of the present invention. FIG. 3 is a diagram showing a gas outlet of a pass-through sputtering device. 11, 21. 12, 22 ・ 13, 24. 14, 23 ・ 15, 34 ・ Transparent substrate Transparent pixel electrode Wiring electrode Nonlinear resistive film Nonlinear resistive element 25 ...... Alignment film 26.33 ... Liquid crystal 27.32 ... ...Transparent electrode 28 ...... Deflection plate

Claims (5)

[Claims] (1) In an electro-optical device manufacturing method in which a base a-Si material for a switching element is deposited by reactive sputtering using silicon as a target, the amount of reactive gas is adjusted according to the resistance value from the terminal part of the wiring electrode. A method of manufacturing an electro-optical device, characterized in that: (2) The inner surface of at least one of the substrates is made up of a wiring electrode, a pixel electrode, and a nonlinear resistance element, and the nonlinear resistance element has a first conductor made of the wiring electrode, and a second conductor made of the pixel electrode, Further, in the method of manufacturing an electro-optical device, the electro-optical device is formed of a nonlinear resistive film made of a-Si as a base material, deposited by reactive sputtering using silicon as a target, between the first conductor and the second conductor.
2. The method of manufacturing an electro-optical device according to claim 1, wherein the amount of reactive gas is adjusted depending on the resistance value from the terminal portion of the first conductor comprising the wiring electrode. (3) In the method for manufacturing an electro-optical device in which the nonlinear resistance film is substantially made of SiNx, silicon is used as a target, and the amount of nitrogen gas as a reactive gas is blown out in inverse proportion to the resistance value from the terminal portion of the wiring electrode. 3. The method of manufacturing an electro-optical device according to claim 2, wherein reactive sputtering is performed to deposit SiNx. (4) In the method of manufacturing an electro-optical device in which the nonlinear resistance film is substantially made of SiOy, silicon is used as a target, and the amount of oxygen gas as a reactive gas is blown out in inverse proportion to the resistance value from the terminal portion of the wiring electrode. 3. The method of manufacturing an electro-optical device according to claim 2, wherein the SiOy is deposited by reactive sputtering. (5) In the method for manufacturing an electro-optical device in which the nonlinear resistance film is substantially made of SiNxOy, silicon is used as a target, and the amounts of reactive gases such as nitrogen and oxygen gas are inversely proportional to the resistance value from the terminal portion of the wiring electrode. 3. The method of manufacturing an electro-optical device according to claim 2, wherein the SiNxOy is deposited by blowing it out and performing reactive sputtering.