JPH03207426A - Method for detoxicating organic semiconductor exhaust gas - Google Patents
Method for detoxicating organic semiconductor exhaust gasInfo
- Publication number
- JPH03207426A JPH03207426A JP2000879A JP87990A JPH03207426A JP H03207426 A JPH03207426 A JP H03207426A JP 2000879 A JP2000879 A JP 2000879A JP 87990 A JP87990 A JP 87990A JP H03207426 A JPH03207426 A JP H03207426A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- exhaust gas
- activated carbon
- organic semiconductor
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims description 13
- 239000007789 gas Substances 0.000 claims abstract description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 23
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 150000002894 organic compounds Chemical class 0.000 claims description 7
- 238000001179 sorption measurement Methods 0.000 claims 1
- 230000005587 bubbling Effects 0.000 abstract description 21
- -1 As(OC2H5)3 Chemical compound 0.000 abstract description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000001784 detoxification Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000003463 adsorbent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 231100001231 less toxic Toxicity 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012015 optical character recognition Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Landscapes
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Catalysts (AREA)
- Treating Waste Gases (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、有機系半導体排気ガスの有害戒分を無害化
する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for rendering harmful substances in organic semiconductor exhaust gas harmless.
近年、半導体産業における微細加工技術が著しく進歩し
、半導体を加工する際に使用する半導体用ガスもプロセ
スに応じて非常に多様化してきている。上記のような半
導体用ガスとしては、例えば、化学蒸着（ＣＶＤ）用の
高圧ガスおよびドーピング用特殊材料ガス等がある。と
ころが、最近では、安全性および供給量の点から、Ｓ
ｉ （Ｏ Ｃ ｚＨｓ）４， Ａｓ（ＯＣｚ Ｈｓ）ｓ
， Ｐ （ＯＣＨｉ）ｉ ， Ｂ（ＯＣＨｚ）ｓ
等の、常温で液状の有機系半導体用ガスが使用されてき
ている。In recent years, microfabrication technology in the semiconductor industry has progressed significantly, and the semiconductor gases used when processing semiconductors have become extremely diverse depending on the process. Examples of such semiconductor gases include high-pressure gases for chemical vapor deposition (CVD) and special material gases for doping. However, recently, S
i (OCzHs)4, As(OCzHs)s
, P (OCHi)i , B(OCHz)s
Gases for organic semiconductors that are liquid at room temperature have been used.
しかしながら、上記有機系半導体用ガスは、ＳｉＨ＜
，ＡｓＨ＊ ，ＰＨｓ ，Ｂｚ Ｈｈ等に較べて毒性は
低いと言われているが、有害威分であることには変わり
はないため、上記有機系半導体用ガスを系外に排出する
前に、これらの有害威分を除去し無害化することが必要
となる。そこで、現♂では、液状の有機系半導体用ガス
を、Ａｒ，ＮＺ等でパブリングさせてガス状にし、Ｎａ
ＯＨ溶樫等と向流接触させる湿式スクラバー法を利用し
］有害戒分を除去することが行われている。とこ２が、
この湿式スクラバー法では、上記有害戒分苓完全に除去
することは不可能であり、分解生戒狛の一部が薬液ミス
トに同伴されて系外へ排出さｔ．るという現象が生じる
。また、冬期における薬沼の凍結、薬液の管理の煩わし
さ等の問題もある大め、より有効な処理方法の確立が望
まれている。However, the above gas for organic semiconductors is SiH<
Although it is said to be less toxic than , AsH*, PHs, Bz Hh, etc., it is still harmful, so before discharging the above organic semiconductor gas to the outside of the system, It is necessary to remove these harmful elements and render them harmless. Therefore, at present, the liquid organic semiconductor gas is made into a gas by bubbling with Ar, NZ, etc.
Harmful substances are removed using a wet scrubber method in which the material is brought into countercurrent contact with OH molten oak, etc. The second thing is
With this wet scrubber method, it is impossible to completely remove the above-mentioned harmful substances, and some of the decomposed substances are carried away by the chemical mist and are discharged from the system. This phenomenon occurs. In addition, there are major problems such as freezing of medicinal ponds in winter and the troublesome management of chemical solutions, so it is desired to establish a more effective treatment method.
この発明は、このような事情に鑑みなされたもので、上
記有害或分である有機系半導体排気ガスを完全に処理し
無害化する方法の提供をその目畝とする。The present invention was made in view of these circumstances, and its purpose is to provide a method for completely treating and rendering harmless the above-mentioned harmful organic semiconductor exhaust gas.
（課題を解決するための手段〕
上記の目的を達威するため、この発明の有機系半導体排
気ガスの無害化方法は、下記の有機化合物（Ａ）をガス
状で含有する排気ガスを、ｏ′ｃ〜２００℃の温度下で
、金属酸化物を含有させた活性炭に接触させ、その排気
ガス中の下記有機化合物（Ａ）を上記金属酸化物の作用
により酸化させ、これを活性炭に吸着させて除去し無害
化するという構戒をとる．
（Ａ） Ｓｉ（ＯＣｚ Ｈｓ）４，ＡｓＣＯＣｔ Ｈ
ｓ）＋ ，Ｐ （ Ｏ Ｃ Ｈｚ）ｉおよびＢ （ Ｏ
Ｃ Ｈ３）ｌがらなる群から選ばれた少なくともーっ
の有機化合物。(Means for Solving the Problems) In order to achieve the above object, the method for detoxifying organic semiconductor exhaust gas of the present invention provides an o The organic compound (A) in the exhaust gas is oxidized by the action of the metal oxide by contacting activated carbon containing a metal oxide at a temperature of ~200°C, and the organic compound (A) is adsorbed onto the activated carbon. (A) Si(OCz Hs)4, AsCOCt H
s) + , P (O C Hz)i and B (O
At least one organic compound selected from the group consisting of C H3)l.
すなわち、本発明者らは、湿式スクラバー法によらず、
上記有害戒分である有機系半導体用ガスを吸着除去させ
ることのできる吸着剤について一連の研究を行った。こ
の研究の過程で、上記有機系半導体用ガスである上記有
害或分（Ａ）をそのまま除去するのではなく、酸化して
酸化物の状態にして除去することを着想した。そして、
これについてさらに研究を重ねた結果、上記酸化物をつ
くるための金属触媒として金属酸化物が好適であり、こ
れをそのまま使用するのではなく、活性炭に含有させ、
この活性炭に上記有機系半導体用ガスを液状ではな＜Ｎ
ｚ ，Ａｒ等の吹き込みによってガス状にして接触させ
ると、高効率で上記有害威分（Ａ）の除去ができるよう
になることを見い出しこの発明に到達した。That is, the present inventors did not rely on the wet scrubber method,
A series of studies were conducted on adsorbents that can adsorb and remove the above-mentioned harmful organic semiconductor gases. In the course of this research, we came up with the idea of oxidizing the harmful component (A), which is the organic semiconductor gas, instead of removing it as it is, converting it into an oxide. and,
As a result of further research on this matter, it was found that metal oxides are suitable as metal catalysts for producing the above-mentioned oxides, and instead of using them as they are, they are incorporated into activated carbon.
The above-mentioned organic semiconductor gas is applied to this activated carbon in a non-liquid state <N
The present inventors have discovered that the above-mentioned harmful component (A) can be removed with high efficiency by contacting it in a gaseous state by blowing z, Ar, etc., and have thus arrived at this invention.
つぎに、この発明を詳細に説明する。Next, this invention will be explained in detail.
この発明において、処理対象とする有機系半導体用ガス
は、常温で液状であるＳｉ（ＯＣｚ ＨＳ）４ ．Ａｓ
（ＯＣｔ ＨＳ）３ ． Ｐ （ＯＣＲ３）：Ｉ ，
Ｂ （ＯＣＨ，），のような有機化合物（Ａ）である
，この発明は、上記常温で液状である有機系半導体用ガ
スを、Ｎｚ ，Ａｒ等の吹き込み（パブリング）によっ
てガス状にし、この有機系半導体用ガスを含有する排気
ガス（残部はＮｘ ，Ａｒ等）を金属酸化物を含有させ
た活性炭粒子に接触反応させて上記排気ガス中の有機系
半導体用ガス（Ａ）を酸化し、この酸化生戒物を活性炭
に吸着させ無害化するものである。In this invention, the organic semiconductor gas to be treated is Si(OCz HS)4. As
(OCt HS)3. P (OCR3):I,
This invention is an organic compound (A) such as B (OCH, ), which is made by converting the organic semiconductor gas, which is liquid at room temperature, into a gaseous state by bubbling with Nz, Ar, etc. The organic semiconductor gas (A) in the exhaust gas is oxidized by contacting and reacting the exhaust gas containing the organic semiconductor gas (the remainder is Nx, Ar, etc.) with activated carbon particles containing metal oxides. Oxidized biological substances are adsorbed onto activated carbon to render them harmless.
常温で液状である有機系半導体用ガスをガス化するため
に用いるガスは、上記のようなＮ．，Ａｒに限らず、Ｈ
ｅ，Ｎｅも使用可能であり、またこれらを適宜混合した
混合ガスも用いることができる。The gas used to gasify the organic semiconductor gas which is liquid at room temperature is the above-mentioned N. , Ar, H
E and Ne can also be used, and a mixed gas of these can also be used.
上記活性炭に含有させる金属酸化物としては、単一の酸
化物よりも、Ｚｎ Ｏ， Ｃｕ Ｏ，アルキル金属酸
化物からなる複数の金属酸化物が好ましい。このような
複数の金属酸化物の各威分の含有割合としては、例えば
Ｚｎ Ｏが４０〜８０重量％（以下％と略す），ＣｕＯ
が１５〜５０％，アルキル金属酸化物が５〜１０％があ
げられ、これが最も好適である。As the metal oxide to be contained in the activated carbon, a plurality of metal oxides including ZnO, CuO, and alkyl metal oxides are preferable to a single oxide. As for the content ratio of each component of such a plurality of metal oxides, for example, ZnO is 40 to 80% by weight (hereinafter abbreviated as %), CuO
15 to 50%, and 5 to 10% of the alkyl metal oxide, which is most preferred.
この発明に用いる処理装置としては、例えば第１図に示
すものが用いられる．図において、１はアクリル製の処
理筒で、内部に金属酸化物を含有させた活性炭が充填さ
れている。２はバプリング型ガス供給容器で、内部に液
状の上記有機系半導体用ガスを充填するようになってる
．３は上記パブリング型ガス供給容器２内に流量を調節
してＮ．，Ａｒ等の不活性ガスを供給するパブリングキ
ャリアである。As the processing apparatus used in this invention, for example, the one shown in FIG. 1 is used. In the figure, reference numeral 1 denotes an acrylic processing cylinder, the inside of which is filled with activated carbon containing metal oxide. 2 is a bubbling type gas supply container, the inside of which is filled with the above-mentioned liquid gas for organic semiconductors. 3 adjusts the flow rate into the bubbling type gas supply container 2 to supply N. This is a pubbling carrier that supplies inert gas such as , Ar, etc.
上記装置を用い、有機系半導体用ガスを処理する場合、
まず、パブリング型ガス供給容器２に、処理対象の液状
有機系半導体用ガスを充填しておく。つぎに、パブリン
グキャリア３から一定の流量の不活性ガスをパブリング
型ガス供給容器２内に送り込んで液状の有機系半導体用
ガスをバプリングすることによりガス状にし、これを処
理筒ｌ内に送り込む。つぎに、上記ガス状の有機系半導
体用ガスと不活性ガスからなる排気ガスをＯ℃〜２００
″Ｃの温度下の処理筒ｌ内に導く．これにより、上記排
気ガスの有機系半導体用ガスが、上記活性炭の金属酸化
物と反応して酸化され、その酸化物が生或すると同時に
活性炭に化学吸着される。その結果、有機系半導体用ガ
スが乾式的に無害化処理される。When processing organic semiconductor gas using the above device,
First, the bubbling type gas supply container 2 is filled with a liquid organic semiconductor gas to be treated. Next, a constant flow rate of inert gas is sent from the bubbling carrier 3 into the bubbling-type gas supply container 2 to bubble the liquid organic semiconductor gas to a gaseous state, and this is sent into the processing cylinder l. . Next, the exhaust gas consisting of the above gaseous organic semiconductor gas and inert gas was heated to 0°C to 200°C.
The organic semiconductor gas in the exhaust gas reacts with the metal oxide of the activated carbon and is oxidized, and at the same time as the oxide is produced, it is converted into activated carbon. As a result, the organic semiconductor gas is dry-processed to be rendered harmless.
なお、５０℃以上で有機系半導体用ガスを処理する場合
は、第２図に示すように、処理筒ｌを加熱するための加
熱設備４を設け、処理筒１を上記のアクリル製のものに
代えて、耐熱性のあるステンレス製のものを使用して処
理を行うことがなされる。In addition, when processing an organic semiconductor gas at a temperature of 50°C or higher, as shown in Fig. 2, a heating equipment 4 for heating the processing cylinder 1 is installed, and the processing cylinder 1 is made of the above-mentioned acrylic. Instead, heat-resistant stainless steel is used for the treatment.
この発明の方法で、有機系半導体用ガスの処理を行う場
合において、処理温度を２００℃以上にすると、活性炭
に多量の酸素が混入した際に活性炭が灰化する恐れがあ
り、逆に処理温度を極端に低くすると反応速度が遅くな
り、反応効率の点がら経済的でない。したがって、処理
温度０℃〜３０℃の範囲内が処理？ｉｌに加熱の設備も
不要となり経済的である。When using the method of this invention to process a gas for organic semiconductors, if the processing temperature is set to 200°C or higher, there is a risk that the activated carbon will ash when a large amount of oxygen is mixed into the activated carbon. If it is extremely low, the reaction rate will be slow and it will be uneconomical in terms of reaction efficiency. Therefore, should the processing temperature be within the range of 0°C to 30°C? There is no need for heating equipment for the il, making it economical.
つぎに、実施例について説明する。Next, examples will be described.
〈実施例１〉
内径２８ｓ＋ｓのアクリル製処理筒１に、複数の金属酸
化物（Ｚｎ０６０％，Ｃｕ０３５％，アルキル金属酸化
物５％）を含有させた粒径１〜３一一の活性炭３２ｇを
充填した．他方、有機系半導体用ガスとしてＳＬ（ＯＣ
ｚ Ｈｓ）ａをパブリング型ガス供給容器２に充填した
．そして、この容器２内に、パブリングキャリアとなる
Ｎ２を流量２Ｎｌ／ｍｉｎで供給してパブリングし、こ
れを上記処理筒１に導入して無害化処理した．この場合
、パブリングにより発生したガス中のＳｉ（ＯＣｚ Ｈ
Ｓ）４濃度は１９７０ｐｐｍであったところ、処理筒ｌ
の出口のＳｔ（○Ｃ．Ｈ，），濃度は、ＦＩＤ（水素炎
イオン検出器）ガスクロマトグラフにより分析した結果
、０．０５ ｐｐｍ以下（検出限界）まで低減していた
。この濃度は４３５分継続した。<Example 1> An acrylic treatment tube 1 with an inner diameter of 28s+s is filled with 32g of activated carbon with a particle size of 1 to 311 containing a plurality of metal oxides (Zn060%, Cu035%, alkyl metal oxide 5%). did. On the other hand, SL (OC
z Hs)a was filled into the pubbling type gas supply container 2. Then, N2 serving as a bubbling carrier was supplied into this container 2 at a flow rate of 2 Nl/min for bubbling, and this was introduced into the processing cylinder 1 for detoxification treatment. In this case, Si (OCz H
S) 4 concentration was 1970 ppm, processing tube l
As a result of analysis using an FID (Flame Ion Detector) gas chromatograph, the concentration of St (○C.H,) at the outlet of the reactor was found to have decreased to 0.05 ppm or less (detection limit). This concentration lasted for 435 minutes.
く実施例２〉
実施例１と同様の処理筒１に、実施例１と同様の金属酸
化物を含有させた活性炭２５．６ｇを充填した。他方、
有機系半導体用ガスとしてＡｓ（ＯＣｚ Ｈｓ）ｓをバ
プリング型ガス供給容器２に充填した。そして、この容
器２内に、パブリングキャリアとなるＮ！を流量２Ｎｊ
！／ｍｆｎで供給してパブリングし、これを上記処理筒
１に導入して無害化処理した。この場合、バプリングに
より発生したガス中のＡｓＣＯＣｔ Ｈｓ）ｓ濃度は１
９７８ｐｐ■であったところ、処理筒１の出口のＡｓ（
ＯＣｔＨ，），濃度は、ＦＩＤ（水素炎イオン検出器）
ガスクロマトグラフにより分析した結果、０．０５ ｐ
ｐｍ以下（検出限界）まで低減していた。この濃度は２
９５分継続した．
〈実施例３〉
実施例ｌと同様の処理筒１に、実施例１と同様の金属酸
化物を含有させた活性炭８２ｇを充填した。他方、有機
系半導体用ガスとしてＢ （ＯＣＨ，）３をパブリング
型ガス供給容器２に充填した。Example 2> A treatment cylinder 1 similar to that in Example 1 was filled with 25.6 g of activated carbon containing the same metal oxide as in Example 1. On the other hand,
The bubbling type gas supply container 2 was filled with As(OCz Hs)s as an organic semiconductor gas. Then, in this container 2, N! which becomes a pub ring carrier! The flow rate is 2Nj
! /mfn, bubbling was carried out, and this was introduced into the processing cylinder 1 for detoxification treatment. In this case, the AsCOCt Hs)s concentration in the gas generated by bubbling is 1
When it was 978pp■, As(
OCtH, ), concentration is FID (Flame Ion Detector)
As a result of analysis by gas chromatography, 0.05 p
It was reduced to below pm (detection limit). This concentration is 2
It lasted 95 minutes. <Example 3> 82 g of activated carbon containing the same metal oxide as in Example 1 was filled in the same processing cylinder 1 as in Example 1. On the other hand, the bubbling type gas supply container 2 was filled with B (OCH,)3 as an organic semiconductor gas.
そして、この容器２内に、パブリングキャリアとなるキ
ャリアガスのＮｔを流量ＩＮｊ！／ｍｔｎで供給してパ
ブリングし、これを上記処理筒１に導入して無害化処理
した。この場合、パブリングにより発生したガス中のＢ
（ＯＣＲｓ）ｓ濃度は１１２０００ｐｐｍ （１１．
２％）であったところ、処理筒１の出口のＢ（ＯＣＨｓ
）ｓ濃度はＦＩＤ（水素炎イオン検出器）ガスクロマト
グラフにより分析した結果、０．１ ｐｐｍ以下（検出
限界）まで低減していた．この濃度は５７分継続した．
〈実施例４〉
実施例１と同様の処理筒１に、実施例１と同様の金属酸
化物を含有させた活性炭３２ｇを充填した．他方、有機
系半導体用ガスとしてＰ （ＯＣＨ，），をバブリング
型ガス供給容器２に充填した。Then, Nt of the carrier gas which becomes the bubbling carrier is introduced into the container 2 at a flow rate INj! /mtn for bubbling, and introduced into the processing cylinder 1 for detoxification treatment. In this case, B in the gas generated by bubbling
(OCRs) s concentration is 112000 ppm (11.
2%), B(OCHs at the outlet of processing cylinder 1)
)s concentration was analyzed by FID (Flame Ion Detector) gas chromatography, and it was found that it had decreased to 0.1 ppm or less (detection limit). This concentration continued for 57 minutes.
<Example 4> The same processing cylinder 1 as in Example 1 was filled with 32 g of activated carbon containing the same metal oxide as in Example 1. On the other hand, the bubbling type gas supply container 2 was filled with P (OCH,) as an organic semiconductor gas.
そして、この容器２内に、パブリングキャリアとなるキ
ャリアガスのＮ２を流量１．０７Ｎ ｌ ／ ｍ ｉ
ｎで供給してパブリングし、これを上記処理筒１に導入
して無害化処理した。この場合、パブリングにより発生
したガス中のＰ（ＯＣＨｓ）ｓ濃度は８７００ｐｐ−で
あったところ、処理筒１の出口のＰ（ＯＣＨｓ）ｓ濃度
をＦＰＤ （炎光光度型検出器）ガスクロマトグラフに
より分析した結果、１．８ ９ｐｂ （検出限界）まで
低減していた．この濃度は６５分継続した．
〈実施例５〉
処理筒ｌをアクリル製のものから内径２８ｍ＋＊のステ
ンレス製のものに代え、この処理筒１に、実施例１と同
様の金属酸化物を含有させた活性炭３２ｇを充填し、こ
の処理筒ｌを加熱装Ｗ４により２００℃に加熱した。他
方、有機系半導体用ガスとしてＳｔ（ＯＣｚ ＨＳ）４
をパブリング型ガス供給容器２に充填した．そして、こ
の容器２内に、パブリングキャリアとなるキャリアガス
のＮｚを流量２Ｎｆ／ｍｉｎで供給してパブリングし、
これを上記処理筒１′に導入して無害化処理した。この
場合、パブリングにより発生したガス中のＳｉ（ＯＣ．
Ｈ％）４濃度は１９７０ｐｐｍであったところ、処理筒
１′の出口のＳｔ（ＯＣｚ Ｈｓ）ａ濃度をＦ１０（水
素炎イオン検出器）ガスクロマトグラフにより分析した
結果、５０ｐｐｂ以下（検出限界）まで低減していた．
この濃度は４９０分継続した。Then, in this container 2, a carrier gas of N2, which becomes a bubbling carrier, was introduced at a flow rate of 1.07 Nl/m i
n, bubbling was carried out, and this was introduced into the processing cylinder 1 and subjected to detoxification treatment. In this case, the P(OCHs)s concentration in the gas generated by bubbling was 8700 pp-, and the P(OCHs)s concentration at the outlet of the processing cylinder 1 was analyzed using an FPD (flame photometric detector) gas chromatograph. As a result, it was reduced to 1.89 pb (detection limit). This concentration continued for 65 minutes. <Example 5> The processing cylinder 1 was replaced from an acrylic one to a stainless steel one with an inner diameter of 28 m+*, and this processing cylinder 1 was filled with 32 g of activated carbon containing the same metal oxide as in Example 1. This processing cylinder 1 was heated to 200° C. using a heating device W4. On the other hand, St(OCz HS)4 is used as an organic semiconductor gas.
was filled into bubbling type gas supply container 2. Then, a carrier gas Nz serving as a pubbling carrier is supplied into the container 2 at a flow rate of 2 Nf/min to perform pubbling.
This was introduced into the treatment tube 1' and treated to render it harmless. In this case, Si (OC.
H%)4 concentration was 1970 ppm, but as a result of analyzing the St(OCz Hs)a concentration at the outlet of processing cylinder 1' using an F10 (flame ion detector) gas chromatograph, it was reduced to 50 ppb or less (detection limit). Was.
This concentration lasted for 490 minutes.
実施例１〜５の処理結果から処理対象ガスの単位充填剤
当たりの処理量（１００％換算）を算出すると、表のよ
うな結果となる。なお、処理量算出にあたっては、出口
濃度がＳ ｉ（Ｏ Ｃ ｚ Ｈ ｓ）ａにあっては０．
３５ｐｐｍ ， Ａｓ（Ｏ Ｃｚ Ｈｓ）ｓ は０．
０４５ｐｐ一Ｂ（ＯＣＨｓ）ｓ は０．１ｐＰＩＩ，
Ｐ （ Ｏ Ｃ Ｈ ３）３ は０．１８ｐｐｍが検
出された時間を破過時間（充填剤が飽和したと推定され
る時間）とした。When the processing amount (100% conversion) of the gas to be processed per unit filler is calculated from the processing results of Examples 1 to 5, the results are as shown in the table. In addition, when calculating the throughput, if the outlet concentration is S i (O C z H s) a, 0.
35ppm, As(O Cz Hs)s is 0.
045pp-B(OCHs)s is 0.1pPII,
The time when 0.18 ppm of P (OC H 3) 3 was detected was defined as the breakthrough time (the time when the filler is estimated to be saturated).
〈以下余白）
〔発明の効果〕
以上のように、この発明によれば、大量の有機系半導体
用ガスを金属酸化物を含有させた少量の活性炭で完全に
無害化処理することが可能となる。したがって、ランニ
ングコストが安価で、しかも処理装直をコンパクトにす
ることができ、工業的規模の有機系半導体用ガスの処理
に適するものである。(Hereinafter in the margin) [Effects of the Invention] As described above, according to the present invention, it is possible to completely detoxify a large amount of organic semiconductor gas with a small amount of activated carbon containing metal oxide. . Therefore, the running cost is low, the processing equipment can be made compact, and it is suitable for processing organic semiconductor gas on an industrial scale.
第１図はこの発明の一実施例に用いる装置の構或図、第
２図は他の実施例に用いる装置の構或図である。FIG. 1 is a diagram showing the structure of an apparatus used in one embodiment of the present invention, and FIG. 2 is a diagram showing the structure of an apparatus used in another embodiment.
Claims (2)
ガスを、０℃〜２００℃の温度下で、金属酸化物を含有
させた活性炭に接触させ、その排気ガス中の下記有機化
合物（Ａ）を上記金属酸化物の作用により酸化させ、こ
れを活性炭に吸着させて除去し無害化することを特徴と
する有機系半導体排気ガスの無害化方法。 （Ａ）Ｓｉ（ＯＣ＿２Ｈ＿５）＿４，Ａｓ（ＯＣ＿２Ｈ
＿５）＿３、Ｐ（ＯＣＨ＿３）＿３およびＢ（ＯＣＨ＿
３）＿３からなる群から選ばれた少なくとも一つの有機 化合物。(1) Exhaust gas containing the following organic compound (A) in gaseous form is brought into contact with activated carbon containing a metal oxide at a temperature of 0°C to 200°C, and the following organic compound in the exhaust gas is A method for detoxifying organic semiconductor exhaust gas, characterized in that (A) is oxidized by the action of the metal oxide, and is removed and detoxified by adsorption on activated carbon. (A) Si(OC_2H_5)_4, As(OC_2H
_5)_3, P(OCH_3)_3 and B(OCH_
3) At least one organic compound selected from the group consisting of _3.
２，Ｈｅ，ＮｅおよびＫｒからなる群から選ばれた少な
くとも一つの不活性ガスである請求項（１）記載の有機
系半導体排気ガスの無害化方法。(2) The base gas of the exhaust gas is Ar, N_
2. The method for detoxifying organic semiconductor exhaust gas according to claim 1, wherein the gas is at least one inert gas selected from the group consisting of He, Ne, and Kr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000879A JP2647723B2 (en) | 1990-01-06 | 1990-01-06 | Detoxification method of organic semiconductor exhaust gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000879A JP2647723B2 (en) | 1990-01-06 | 1990-01-06 | Detoxification method of organic semiconductor exhaust gas |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03207426A true JPH03207426A (en) | 1991-09-10 |
| JP2647723B2 JP2647723B2 (en) | 1997-08-27 |
Family
ID=11485960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000879A Expired - Fee Related JP2647723B2 (en) | 1990-01-06 | 1990-01-06 | Detoxification method of organic semiconductor exhaust gas |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2647723B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247639A (en) * | 1987-04-03 | 1988-10-14 | Gastec:Kk | Capturing material for analysis of gas for production of semiconductor |
-
1990
- 1990-01-06 JP JP2000879A patent/JP2647723B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247639A (en) * | 1987-04-03 | 1988-10-14 | Gastec:Kk | Capturing material for analysis of gas for production of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2647723B2 (en) | 1997-08-27 |
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