JPH03205823A - Ashing device - Google Patents

Ashing device

Info

Publication number
JPH03205823A
JPH03205823A JP66590A JP66590A JPH03205823A JP H03205823 A JPH03205823 A JP H03205823A JP 66590 A JP66590 A JP 66590A JP 66590 A JP66590 A JP 66590A JP H03205823 A JPH03205823 A JP H03205823A
Authority
JP
Japan
Prior art keywords
wafer
wafers
treatment
stage
ashing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP66590A
Other languages
Japanese (ja)
Inventor
Akiisa Inada
稲田 暁勇
Sumio Yamaguchi
山口 純男
Mitsuo Tokuda
徳田 光雄
Kenichi Kawasumi
川澄 建一
Toshiaki Fujito
藤戸 利昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP66590A priority Critical patent/JPH03205823A/en
Publication of JPH03205823A publication Critical patent/JPH03205823A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain an ashing device which can handle 50 sheets and is compact and free of pollution occurrence by performing the ashing treatment from the upper stage of a wafer cassette to the lower stage. CONSTITUTION:In a method of providing two wafer cassettes 1, putting wafers in both cassettes 1, taking out wafers from the wafer cassettes 1, ashing the wafers and returning the wafers 1 after the treatment to the same stage of the wafer cassettes 1, the treatment is done from the upper stages of the wafer cassettes 1 to the lower stages. For example, wafers are set in the wafer cassettes 1 and 1, and a wafer of each cassette 1 is taken out by a carrier 2, and they are loaded in treatment rooms 3 to do ashing treatment. The wafers after ashing treatment are stored in the same stages of the wafer cassettes 1, and next wafers at lower stage are taken out and the treatment is repeated. And a cleaning arm 4 is inserted in the vacant stage of the wafer cassette in the course of treatment to do cleaning by supplying ultraviolet rays and ozone.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はアッシング装置に係り、特にウェーハカセット
の同一段に処理後のウェーハを戻す方式において、ウェ
ーハの汚染を防止する手段を設けたアッシング装置に関
する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an ashing device, and particularly an ashing device provided with means for preventing contamination of wafers in a method of returning processed wafers to the same stage of a wafer cassette. Regarding.

〔従来の技術〕[Conventional technology]

例えば「光アッシング技術」セミコンニュース(SEM
ICON NElilS) ,1 9 8 8、12号
には、ウェーハカセットをローダ側とアンローダ側に分
けて、処理する装置が示されている。このような処理で
は,処理時のウェーハは汚れない。しかしこの従来方式
では、ウェーハを25枚しかセットできず、一般に50
枚ロットで作業する場合には不便である。
For example, "Optical ashing technology" SEMICON News (SEM
ICON NEILS), 1988, No. 12 discloses an apparatus that processes wafer cassettes by dividing them into a loader side and an unloader side. In such processing, the wafer is not contaminated during processing. However, with this conventional method, only 25 wafers can be set, and generally 50 wafers can be set.
This is inconvenient when working in batches.

このため両方のウェーハ力セットにウェーハを詰めて(
50枚)、ウェーハを引き出し、処理の後、ウェーハを
引き出した同一段に戻す方式が実施されている。
For this purpose, both wafer force sets are packed with wafers (
50 wafers), the wafers are pulled out, and after processing, the wafers are returned to the same stage from which they were pulled out.

〔発明の解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術では、ウェーハカセットの下段より、ウェ
ーハを処理し始めると、処理後の清浄なウェーハの上の
段の未処理ウェーハを取り出す時にレジスト等のゴミが
落ち、下の清浄なウェーハを汚染することになる。
In the above-mentioned conventional technology, when processing wafers from the lower stage of the wafer cassette, when unprocessed wafers from the upper stage are taken out from the clean wafers after processing, dust such as resist falls off and contaminates the clean wafers below. It turns out.

また、未処理ウェーハを引き出す時に、レジスト等が段
に付着していた場合には、処理後の清浄なウェーハを同
一段に戻すため、この付着物がウェーハを汚染すること
になる。
Furthermore, if unprocessed wafers are pulled out and resist or the like is attached to the stage, this deposit will contaminate the wafers since the clean wafers after processing are returned to the same stage.

本発明は、これらの欠点を改善し、50枚処理可能で、
コンパクトかつ汚染発生のないアッシング装置を提供す
ることにある。
The present invention improves these drawbacks and allows processing of 50 sheets.
An object of the present invention is to provide an ashing device that is compact and does not cause contamination.

〔課題を解決するための手段〕[Means to solve the problem]

上記の目的を達成するために本発明においては、次のよ
うに手段を構じたものである。
In order to achieve the above object, the present invention has the following means.

1、ウェーハの処理を、ウェーハカセットの上段から始
め、常に未処理のウェーハは処理後の清浄なウェーハの
下にあるようにする。
1. Start processing wafers from the top of the wafer cassette, with unprocessed wafers always below clean wafers after processing.

2、ウェーハ処理中に空きとなっているウェーハカセッ
トの段に、紫外線照射とオゾン供給を行なう。
2. Ultraviolet rays are irradiated and ozone is supplied to empty wafer cassette stages during wafer processing.

〔作用〕[Effect]

1.処理を常にウェーハカセットの上段から行なうこと
により,未処理ウェーハを,処理後のウェーハの下に位
置させ、未処理ウェーハを引き出す時に、例え、レジス
ト等が落下しても、未処理ウェーハの上に落ち、処理後
のウェーハは清浄に保たれる。
1. By always performing processing from the top of the wafer cassette, unprocessed wafers are positioned below processed wafers, and even if resist, etc. falls when unprocessed wafers are pulled out, they will not be placed on top of unprocessed wafers. The wafers are kept clean after processing.

2、ウェーハを引き出す時に付着したウェーハカセット
空段の汚れは、紫外線照射とオゾン供給により、いわゆ
るU V / C aクリーニングされ、次に処理後の
ウェーハが戻ってきても、それを汚染することがなくな
る。
2. Dirt on the empty wafer cassette that adheres when the wafer is pulled out is cleaned using so-called UV/Ca cleaning by UV irradiation and ozone supply, so that even if the wafer is returned after processing, it will not be contaminated. It disappears.

〔実施例〕〔Example〕

以下、本発明の一実施例を第1図,第2図により説明す
る。
An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

第1図において、ウェーハ(図示略)はウェーハカセッ
ト1,1′にセットされ、搬送機2により取り出され、
処理室3の中に収納されて、アッシング処理される。ア
ッシング後のウェーハはウェーハカセットlの同一段に
収納され、次にその下段のウェーハが取り出され、上記
の処理以降をくりかえす。このように本発明においては
、処理をウェーハ力セットの上段から始め、下段へと移
つていく。
In FIG. 1, wafers (not shown) are set in wafer cassettes 1, 1', taken out by a carrier 2,
It is stored in the processing chamber 3 and subjected to ashing processing. The wafers after ashing are stored in the same stage of the wafer cassette l, and then the wafers in the lower stage are taken out and the above-mentioned process is repeated. Thus, in the present invention, processing begins at the top of the wafer force set and moves to the bottom.

次に処理中のウェーハカセットの空き段にクリニングア
ーム4を挿入させ、紫外線とオゾンを供給し、空き段を
ウェーハ処理時間中にクリーニングする。ウェーハの処
理が終了する直前にクリニングアームは引っ込み、処理
後のウェーハが上記クリーニングされた空き段に戻され
る。
Next, the cleaning arm 4 is inserted into the empty stage of the wafer cassette being processed, and ultraviolet rays and ozone are supplied to clean the empty stage during the wafer processing time. Immediately before the processing of the wafer is completed, the cleaning arm is retracted, and the processed wafer is returned to the cleaned empty stage.

この時、スペースの都合上、ウェーハカセット上,1′
を例えば45゜回転させ、クリーニングアームを設置し
やすくする方法もある(第2図参照)。
At this time, due to space limitations, we placed 1' on the wafer cassette.
There is also a method of rotating the cleaning arm by, for example, 45 degrees to make it easier to install the cleaning arm (see Figure 2).

クリーニングアームの構造としては、第3図に示すよう
に、光ファイバー5にて紫外線を導入し、別途管7にて
オゾンを供給する構造とする。
As shown in FIG. 3, the structure of the cleaning arm is such that ultraviolet light is introduced through an optical fiber 5 and ozone is supplied through a separate tube 7.

また,オゾン洩れを防止するため、アツシャ全体には図
示していないカバーを設け,ダクトで引き、オゾン分解
器にてオゾンを消滅させる構造とする。
In addition, to prevent ozone leakage, a cover (not shown) is provided over the entire atssia, which is pulled through a duct, and ozone is extinguished by an ozone decomposer.

ここで、第3図において6は紫外線をカセットホルダ内
に照射する石英無空捧、8はオゾン吹出し用のスリット
である。
Here, in FIG. 3, reference numeral 6 indicates a quartz blank for irradiating ultraviolet rays into the cassette holder, and reference numeral 8 indicates a slit for blowing out ozone.

なお、第1図において、クリーニングアームの水平移動
機構は図示していない。
In addition, in FIG. 1, the horizontal movement mechanism of the cleaning arm is not shown.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、カセット2個で50枚のウェーハの処
理ができ、装置を小さくでき,かつ稼動効率を高めるこ
とができる。
According to the present invention, 50 wafers can be processed with two cassettes, the apparatus can be made smaller, and the operating efficiency can be increased.

また、ウェーハカセットの上側から処理を始め、下側へ
移動するため、ウェーハからの落下物が処理済ウェーハ
上へ落ちることはない。
Furthermore, since processing starts from the top of the wafer cassette and moves to the bottom, objects falling from the wafers will not fall onto the processed wafers.

さらに、クリーニングアームにより空き段をクリーニン
グするため処理後のウェーハをより一層清浄に保つこと
ができる。
Furthermore, since the empty stage is cleaned by the cleaning arm, the wafers after processing can be kept even more clean.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のアッシング装置の側面図、
第2図は第1図の装置の平面図,第3図は本発明の一実
施例のアッシング装置に設けられたクリーニングアーム
の一部断面図である。
FIG. 1 is a side view of an ashing device according to an embodiment of the present invention;
2 is a plan view of the device shown in FIG. 1, and FIG. 3 is a partial sectional view of a cleaning arm provided in the ashing device according to an embodiment of the present invention.

Claims (1)

【特許請求の範囲】 1、ウェーハカセットを2コ設置し、この両方にウェー
ハを入れ、ウェーハカセットからウェーハを取出し、ア
ッシング処理した後、処理後のウェーハをウェーハカセ
ットの(ウェーハを取り出した)同一段に戻す方式にお
いて、ウェーハカセットの上段から下段へ処理していく
ことを特徴としたアッシング装置。 2、ウェーハ処理中にウェーハカセットの空き段(ウェ
ーハ取出し中)に紫外線照射とオゾン供給を行なって空
き段をクリーニングする手段を設けたことを特徴とした
請求項1記載のアッシング装置。
[Claims] 1. Two wafer cassettes are installed, wafers are placed in both of them, the wafer is taken out from the wafer cassette, the ashing process is performed, and the processed wafer is placed in the same wafer cassette (from which the wafer was taken out). This ashing device is characterized by processing wafer cassettes from the upper stage to the lower stage in a single stage returning method. 2. The ashing apparatus according to claim 1, further comprising means for cleaning the empty stage of the wafer cassette by irradiating ultraviolet rays and supplying ozone to the empty stage of the wafer cassette (during unloading of the wafer) during wafer processing.
JP66590A 1990-01-08 1990-01-08 Ashing device Pending JPH03205823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP66590A JPH03205823A (en) 1990-01-08 1990-01-08 Ashing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP66590A JPH03205823A (en) 1990-01-08 1990-01-08 Ashing device

Publications (1)

Publication Number Publication Date
JPH03205823A true JPH03205823A (en) 1991-09-09

Family

ID=11480033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP66590A Pending JPH03205823A (en) 1990-01-08 1990-01-08 Ashing device

Country Status (1)

Country Link
JP (1) JPH03205823A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101029984B1 (en) * 2008-04-28 2011-04-20 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101029984B1 (en) * 2008-04-28 2011-04-20 도쿄엘렉트론가부시키가이샤 Substrate processing apparatus

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