JPH03205609A - Thin-film magnetic head - Google Patents

Abstract

PURPOSE:To improve mass productivity by providing the terminals on a thin-film magnetic head side where a conductor coil and external electrodes are connected by conductors on the surface exclusive of the element forming surface of the thin-film magnetic head. CONSTITUTION:Terminals 4a, 4b on the thin-film magnetic head side where the conductor coil 3 and the external electrodes 5 are connected by the conductors are provided on the surface exclusive of the element forming surface of the thin-film magnetic head and a protective layer 7 for the element protection of the thin-film magnetic head is formed over the entire surface of the element forming surface of the thin-film magnetic head. After the protective layer for protecting the thin-film magnetic head element is formed over the entire surface in the wafer state of the thin-film magnetic head, the element is worked to the chip state of the thin-film magnetic head, by which the formation of the protective layer 7, etc., on side face terminals 4a, 4b is obviated and the generation of the connection defect to the conductors 6 is prevented. Since the need for mask setting is eliminated in this way, the mass productivity is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film magnetic head, and more particularly to a thin film magnetic head having a protective layer for a thin film magnetic head element and a wiring lead-out 1L pole.

[Conventional technology]

As disclosed in Japanese Unexamined Patent Application Publication No. 1-92917, a conventional thin magnetic head is provided with a coil wiring extraction electrode within the surface on which the thin film magnetic head element is formed. The layer was formed on the coil wiring lead electrode, and methods such as mask sputtering and mask sputtering were used.

[Problem to be solved by the invention]

In the above-mentioned conventional technique, since the coil wiring lead electrode is located within the surface where the thin magnetic head element is formed, a protective layer for protecting the thin M magnetic head element cannot be formed on the coil wiring lead electrode. Alternatively, a method has been used in which a κ protection layer is formed on the entire surface and the protective layer on the coil wiring lead electrode is removed. If a protective layer is not formed on the coil wiring electrode, it is necessary to use a mask sputtering method to form a protective layer on the coil wiring lead-out electrode using mask sputtering, etc., which makes mass production difficult. . In addition, even when mask sputtering is performed, there is some wraparound, which may cause poor contact between the coil wire drawer electrode and the conductor wire. Similarly, even if a protective layer is formed on the entire bottom surface of a thinly demagnetized head element and only the protective layer on the coil wiring lead electrode is removed, poor removal or excessive removal may occur, making mass production difficult. It was extremely bad.

As described above, in the above-mentioned conventional technology, no consideration is given to highly reliable coil extraction electrodes and their mass production.
It was.

An object of the present invention is to have a coil wiring lead-out electrode,
It is an object of the present invention to provide a thin film magnetic head which realizes a protective layer type with good IL productivity.

[Means to solve the problem]

The above purpose is to fabricate the terminals on the thin film magnetic head side that connect the conductor coil and the external electrode with conductor wires on a surface other than the surface on which the thin film magnetic head element is formed, and to fabricate the terminals on the thin film magnetic head side, which connects the conductor coil and the external electrode with conductor wires, and to fabricate the thin film magnetic head side terminals on the surface other than the surface where the thin film magnetic head element is formed. This is achieved by providing a protective layer to protect the magnetic head element.

[For production]

The side terminals are not exposed anywhere when the thin film magnetic head is in the Ueno state, and the thin film magnetic head Ueno 1 is processed.
Since the thin film magnetic head is exposed only when it is in the chip state, after applying the protective layer for protecting the thin film magnetic head element to the entire surface of the thin film magnetic head in the wafer state, the thin film magnetic head is exposed in the chip state. By processing the side terminals, no protective layer or the like is formed on the side terminals, and connection failures with the conductor wires will not occur. 'In addition, the S-layer formation can be carried out in the state of a thin-film magnetic hexagonal wafer, and mask settings such as mask spactors are no longer necessary, so mass productivity is extremely improved.

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

FIG. 1 is a plan view showing an embodiment of the thin film magnetic head of the present invention, in which 1 is a substrate, 2 is a magnetic core, 5 is a coil, and 4α and 4b are side terminals. Further, FIG. 2 shows the side terminal 4eL of the thin film magnetic head of the present invention. 4b and external electrode 5
6 is a schematic diagram showing the wiring, and 6 is a number wire and 7 is a protective layer.

By configuring the thin film magnetic head in this way, thin k
When the m-head is in the wafer state, 5i0@+M! 03,
The protective layer 7 is formed using forsterite, Pb-based glass, Zs-based glass, etc., and then the thin film magnetic head wafer is cut using a wire saw, dicing saw, etc., and processed into thin film magnetic head chips to form side electrodes. 4
α, 4A can be exposed, and since the protective layer material and the like are easily attached to the side electrodes, connection failures will not occur even when wiring conductor lines. Since the protective layer 7 is formed on the entire surface of the thin film when the gamma layer is in a wafer state, it is not necessary to set a mask such as mask scattering.

In this example, the side electrode is located on the left side of the thin film magnetic head element shape surface, but the position of the side electrode is as follows.
In particular, it is clear that the above-mentioned effects can be obtained even if the location is not the same.

〔Effect of the invention〕

According to the present invention, it is possible to provide a thin film magnetic head that has coil wiring lead-out electrodes and realizes the formation of a protective layer that can be easily mass-produced.

[Brief explanation of drawings]

FIG. 1 is a plan view of a thin film magnetic head according to an embodiment of the present invention;
FIG. 2 is a perspective view showing the wiring state between the side terminals and external electrodes of the thin film magnetic head of the present invention.

Claims (1)

[Claims] 1. In a thin-film magnetic head in which thin films such as a magnetic layer, an insulating layer, and a conductive layer are formed in a predetermined shape on a substrate, a thin film that connects a conductive coil and an external electrode with a conductive wire. A thin film magnetic head, wherein a terminal on the magnetic head side is located on a surface other than an element forming surface of the thin film magnetic head. 2. The thin film magnetic head according to claim 1, wherein a protective layer made of a non-magnetic material is formed over the entire element forming surface of the thin film magnetic head. 3. In claim 2, the protective layer is SiO_2, A
A thin film magnetic head made of l_2O_3, forsterite, Pb-based glass, or Zn-based glass.