JPH03201423A - Exposure device - Google Patents
Exposure deviceInfo
- Publication number
- JPH03201423A JPH03201423A JP1340216A JP34021689A JPH03201423A JP H03201423 A JPH03201423 A JP H03201423A JP 1340216 A JP1340216 A JP 1340216A JP 34021689 A JP34021689 A JP 34021689A JP H03201423 A JPH03201423 A JP H03201423A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal shutter
- mask
- patterns
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 108091008695 photoreceptors Proteins 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000004075 alteration Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000003973 paint Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、光源より発せられた光を、光学式マスクを
介して感光体に照射するようにした露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure apparatus that irradiates light emitted from a light source onto a photoreceptor through an optical mask.
第３図は従来の露光装置を示す概略構成図、第４図はそ
の装置に適用された光学式マスク３を示す斜視図である
。両図に示すように、この露光装置は、光源１と、レン
ズ２と、光学式マスク３とを有している。光学式マスク
３は、ガラス板３ａと、そのガラス板３ａ上に付着され
てマスクパターンを形成する塗料３ｂとで構成されてい
る。FIG. 3 is a schematic configuration diagram showing a conventional exposure apparatus, and FIG. 4 is a perspective view showing an optical mask 3 applied to the apparatus. As shown in both figures, this exposure apparatus includes a light source 1, a lens 2, and an optical mask 3. The optical mask 3 is composed of a glass plate 3a and a paint 3b that is deposited on the glass plate 3a to form a mask pattern.
そして、レジスト等が塗布された半導体ウェハ等の感光
体４が、光学式マスク３に対応して配置される。この状
態で、光源１から発せられた光５が、レンズ２により集
束された後、光学式マスク３に投射される。このとき、
塗料３ｂにより構成されるマスクパターン上に投射され
た光は、塗料３ｂにより遮光されるとともに、それ以外
の領域に投射された光５はガラス板３ａを透過して、感
光体４に照射される。こうして、感光体４のレジストの
うち、マスクパターンと相補関係にある領域のみが露光
され、その露光部が硬化または軟化される。A photoreceptor 4 such as a semiconductor wafer coated with a resist or the like is placed corresponding to the optical mask 3. In this state, light 5 emitted from the light source 1 is focused by the lens 2 and then projected onto the optical mask 3. At this time,
The light projected onto the mask pattern formed by the paint 3b is blocked by the paint 3b, and the light 5 projected onto other areas passes through the glass plate 3a and is irradiated onto the photoreceptor 4. . In this way, only the regions of the resist on the photoreceptor 4 that are complementary to the mask pattern are exposed, and the exposed portions are hardened or softened.
その後、次工程でレジストの硬化または軟化された領域
を除去した後、残ったレジストをマスクとして感光体４
のエツチング等が行われる。After that, in the next step, after removing the hardened or softened areas of the resist, the remaining resist is used as a mask to remove the photoreceptor 4.
Etching etc. are performed.
しかしながら、従来の露光装置における光学式マスク３
では、ガラス板３ａ上に塗料３ｂを付着させてマスクパ
ターンを形成するようにしているため、マスクパターン
を容易に修正できず、−個の光学式マスク３に対しマス
クパターンがほぼ一義的に定まってしまう。このため、
露光パターンの異なる露光処理を行うような場合には、
多種類の光学式マスク３が必要となり、コストの増大を
来たすという問題があった。However, the optical mask 3 in conventional exposure equipment
In this case, since the mask pattern is formed by depositing the paint 3b on the glass plate 3a, the mask pattern cannot be easily modified, and the mask pattern is almost uniquely determined for - number of optical masks 3. It ends up. For this reason,
When performing exposure processing with different exposure patterns,
There is a problem in that many types of optical masks 3 are required, resulting in an increase in cost.
この発明は、上記従来技術の問題を解消し、コストの低
下を図りつつ、マスクパターンの修正および変更が容易
に行える露光装置を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus that can easily modify and change mask patterns while solving the problems of the prior art described above and reducing costs.
この発明は、光源より発せられた光を、光学式マスクを
介して感光体に照射するようにした露光装置であって、
上記目的を達成するため、前記光学式マスクを液晶シャ
ッターにより構成するとともに、その液晶シャッターの
遮光領域パターンの設定を制御する制御手段を設けてい
る。The present invention is an exposure apparatus that irradiates light emitted from a light source onto a photoreceptor through an optical mask,
In order to achieve the above object, the optical mask is constituted by a liquid crystal shutter, and a control means is provided for controlling the setting of a light-shielding area pattern of the liquid crystal shutter.
この発明の露光装置においては、光学式マスクを液晶シ
ャッターにより構成するとともに、液晶シャッターの遮
光領域パターンの設定を制御手段により制御することに
より、遮光領域パターン、つまりマスクパターンを自在
に変化させることができる。In the exposure apparatus of the present invention, the optical mask is constituted by a liquid crystal shutter, and the setting of the light-shielding area pattern of the liquid crystal shutter is controlled by the control means, thereby making it possible to freely change the light-shielding area pattern, that is, the mask pattern. can.
第１図はこの発明の一実施例である露光装置を示す概略
構成図、第２図はその装置の要部を示す概略正面図であ
る。両図に示すように、この露光装置は、光源１１と、
レンズ１２と、液晶シャッター１３により構成される光
学式マスクと、コンピュータ１６とを有している。FIG. 1 is a schematic configuration diagram showing an exposure apparatus which is an embodiment of the present invention, and FIG. 2 is a schematic front view showing the main parts of the apparatus. As shown in both figures, this exposure apparatus includes a light source 11,
It has a lens 12, an optical mask composed of a liquid crystal shutter 13, and a computer 16.
液晶シャッター１３は、透光性水平電極群と透光性垂直
電極群内に液晶が封入されてマトリックス状の電極パタ
ーンが形成されたセルを有するとともに、そのセルが一
対の偏光板間に配置される。The liquid crystal shutter 13 has a cell in which a matrix-like electrode pattern is formed by sealing liquid crystal in a group of translucent horizontal electrodes and a group of vertical translucent electrodes, and the cell is arranged between a pair of polarizing plates. Ru.
また、コンピュータ１６のプログラムに従い上記両電極
群に選択的に電圧を印加することにより、液晶シャッタ
ー１３に所要の遮光領域パターン、すなわちマスクパタ
ーン１３ａが形成されるように構成している。Further, by selectively applying a voltage to both of the electrode groups according to a program in the computer 16, a desired light-shielding area pattern, that is, a mask pattern 13a, is formed on the liquid crystal shutter 13.
この露光装置により露光処理を行うには、まず、レジス
トが塗布されたウェハ等の感光体１４を、液晶シャッタ
ー１３に対応させて配置する。そして、コンピュータ１
６の記憶装置にストアされている各種表示パターン用デ
ータの中から所要のマスクパターン用データを選択的に
読み出し、そのマスクパターン用データに基づき液晶シ
ャッター１３の両電極群に選択的に電圧を印加して、所
要の遮光領域パターン、すなわちマスクパターン１３ａ
を液晶シャッター１３に形成する。この状態で光源１１
より光１５を照射して、レンズ］２により集束させた後
、液晶シャッター１３に投射する。液晶シャッター１３
に投射された光１５のうち、マスクパターン１３ａの領
域に投射された光１５は遮光され、その他の領域に投射
された光１５は透過されるので、感光体１４のレジスト
は、マスクパターン１３ａと相補関係にある領域のみが
露光されることになる。To perform exposure processing using this exposure device, first, a photoreceptor 14 such as a wafer coated with a resist is placed in correspondence with the liquid crystal shutter 13 . And computer 1
6 selectively reads required mask pattern data from among the various display pattern data stored in the storage device 6, and selectively applies voltage to both electrode groups of the liquid crystal shutter 13 based on the mask pattern data. Then, the required light-shielding area pattern, that is, the mask pattern 13a
is formed on the liquid crystal shutter 13. In this state, the light source 11
After emitting light 15 and converging it with a lens] 2, it is projected onto a liquid crystal shutter 13. LCD shutter 13
Of the light 15 projected onto the mask pattern 13a, the light 15 projected onto the area of the mask pattern 13a is blocked, and the light 15 projected onto other areas is transmitted. Only complementary areas will be exposed.
この露光装置によれば、光学式マスクを液晶シャッター
１３により構成するとともに、液晶シャッター１３のマ
スクパターン１３ａを、コンピュータ１６により制御す
るようにしているので、記憶装置にストアされているマ
スクパターン用データに基づいて任意のマスクパターン
１３ａを容易に形成でき、マスクパターン１３ａの修正
および変更を容易に行える。また、ひとつの液晶シャッ
ター１３で多種類のマスクパターン１３ａを形成できる
ので、露光パターンの異なる露光処理を多数行う場合で
も、露光パターンに応じて多種類の光学式マスクを準備
する必要がなく、経済的でコストが低減する。According to this exposure apparatus, the optical mask is constituted by the liquid crystal shutter 13, and the mask pattern 13a of the liquid crystal shutter 13 is controlled by the computer 16, so that the mask pattern data stored in the storage device is Any mask pattern 13a can be easily formed based on the above, and the mask pattern 13a can be easily modified and changed. Furthermore, since many types of mask patterns 13a can be formed with one liquid crystal shutter 13, even when performing many exposure processes with different exposure patterns, there is no need to prepare many types of optical masks according to the exposure patterns, making it economical. cost reduction.
また、露光パターンの修正および変更にかかわらず、液
晶シャッター１３を固定させておくことができるので、
例えば従来の露光装置のように光学式マスク３を着脱す
る必要がなく、感光体１４に対するマスクパターン１３
ａの位置精度が向上する。In addition, the liquid crystal shutter 13 can be kept fixed regardless of whether the exposure pattern is modified or changed.
For example, there is no need to attach and detach the optical mask 3 unlike in conventional exposure apparatuses, and the mask pattern 13 is attached to the photoreceptor 14.
The positional accuracy of a is improved.
なお、上記実施例では、マトリックス型の液晶シャッタ
ー１３を用いるようにしているが、それだけに限られず
、例えばセグメント型の液晶シャッターを用いるように
してもよい。In the above embodiment, a matrix type liquid crystal shutter 13 is used, but the present invention is not limited thereto, and for example, a segment type liquid crystal shutter may be used.
また、上記実施例では、電圧が印加された領域が遮光領
域となる液晶シャッター１３を用いているが、それだけ
に限られず、電圧が印加された領域のみが透光領域とな
る液晶シャッターを用いてもよい。Further, in the above embodiment, the liquid crystal shutter 13 is used in which the area to which voltage is applied is a light-blocking area, but the invention is not limited to this, and a liquid crystal shutter in which only the area to which voltage is applied is a light-transmitting area may be used. good.
また、上記実施例では、マスクパターン１３ａの設定を
コンピュータのプログラムにより行うようにしているが
、例えば液晶ドライバ等のハード回路により行うように
してもよい。Further, in the above embodiment, the mask pattern 13a is set using a computer program, but it may also be set using a hardware circuit such as a liquid crystal driver.
以上のように、この発明の露光装置によれば、光学式マ
スクを液晶シャッターにより構成するとともに、その液
晶シャッターの遮光領域パターンの設定を制御する制御
手段を設けるようにしているため、制御手段からの指令
により、遮光領域パターン、つまりマスクパターンを自
在に変化させることができ、マスクパターンの修正およ
び変更を容易に行えるとともに、ひとつの液晶シャッタ
ーで多種類のマスクパターンを形成でき、経済的でコス
トが低減するという効果が得られる。As described above, according to the exposure apparatus of the present invention, the optical mask is constituted by a liquid crystal shutter, and the control means for controlling the setting of the light-shielding area pattern of the liquid crystal shutter is provided. The light-shielding area pattern, that is, the mask pattern, can be changed freely according to the instructions, making it easy to modify and change the mask pattern, and making it possible to form many types of mask patterns with one liquid crystal shutter, making it economical and cost effective. This has the effect of reducing.
第１図はこの発明の一実施例である露光装置を示す概略
構成図、第２図はその装置の要部を示す概略正面図、第
３図は従来の露光装置を示す概略構成図、第４図はその
装置に適用された光学式マスクを示す斜視図である。
図において、１１は光源、１３は液晶シャッタ１３ａは
マスクパターン、１４は感光体、１５は光、１６はコン
ピュータである。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a schematic configuration diagram showing an exposure apparatus which is an embodiment of the present invention, FIG. 2 is a schematic front view showing the main parts of the apparatus, and FIG. 3 is a schematic configuration diagram showing a conventional exposure apparatus. FIG. 4 is a perspective view showing an optical mask applied to the device. In the figure, 11 is a light source, 13 is a liquid crystal shutter 13a is a mask pattern, 14 is a photoreceptor, 15 is a light, and 16 is a computer. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
感光体に照射するようにした露光装置において、 前記光学式マスクを液晶シャッターにより構成するとと
もに、その液晶シャッターの遮光領域パターンの設定を
制御する制御手段を設けたことを特徴とする露光装置。(1) In an exposure apparatus configured to irradiate light emitted from a light source onto a photoreceptor through an optical mask, the optical mask is constituted by a liquid crystal shutter, and a light-blocking area pattern of the liquid crystal shutter is set. An exposure apparatus characterized by comprising a control means for controlling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340216A JPH03201423A (en) | 1989-12-28 | 1989-12-28 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1340216A JPH03201423A (en) | 1989-12-28 | 1989-12-28 | Exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03201423A true JPH03201423A (en) | 1991-09-03 |
Family
ID=18334806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1340216A Pending JPH03201423A (en) | 1989-12-28 | 1989-12-28 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03201423A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05259026A (en) * | 1992-01-21 | 1993-10-08 | Hughes Aircraft Co | Device and method for micro-patternized surface |
| JPH0713337A (en) * | 1993-06-21 | 1995-01-17 | Nec Corp | Exposure device for thick film wiring pattern |
| US7116398B2 (en) | 2003-11-07 | 2006-10-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
1989
- 1989-12-28 JP JP1340216A patent/JPH03201423A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05259026A (en) * | 1992-01-21 | 1993-10-08 | Hughes Aircraft Co | Device and method for micro-patternized surface |
| JPH0713337A (en) * | 1993-06-21 | 1995-01-17 | Nec Corp | Exposure device for thick film wiring pattern |
| US7116398B2 (en) | 2003-11-07 | 2006-10-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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