JPH0320030A - Cleaning method for wafer - Google Patents

Cleaning method for wafer

Info

Publication number
JPH0320030A
JPH0320030A JP15542989A JP15542989A JPH0320030A JP H0320030 A JPH0320030 A JP H0320030A JP 15542989 A JP15542989 A JP 15542989A JP 15542989 A JP15542989 A JP 15542989A JP H0320030 A JPH0320030 A JP H0320030A
Authority
JP
Japan
Prior art keywords
wafer
water
air
exposed
wafer surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15542989A
Other languages
Japanese (ja)
Inventor
Shoichi Nakagawa
正一 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15542989A priority Critical patent/JPH0320030A/en
Publication of JPH0320030A publication Critical patent/JPH0320030A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To eliminate remainder of trace pattern on a solid state image sensor by always beating a wafer surface with washing shower while the wafer is exposed in the air. CONSTITUTION:While a wafer 6 is moved manually or automatically by a conveyor between buses 1 and 3, the wafer 6 is beaten with washing shower 9. Accordingly, the water droplets on the wafer 6 are not steady at a predetermined position even if the droplets are formed while it is exposed in the air. The remainder of the residue in the water droplet at a predetermined position on the wafer 6 as a trace is eliminated. Thus, a trace pattern of the residue in the droplet does not remain in a solid state image sensor.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、半導体ウェハのウェット洗浄方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for wet cleaning semiconductor wafers.

従来の技術 半導体ウェハの表面はウェットエッチング法の弗酸系エ
ッチング液でエッチング処理することにより撥水性にす
ることができる。従来のウェットエッチングまたはウエ
ット洗浄方法の一例の工程順概念図を第2図に示す。
BACKGROUND OF THE INVENTION The surface of a semiconductor wafer can be made water repellent by etching it with a hydrofluoric acid-based etchant using a wet etching method. FIG. 2 shows a conceptual diagram of the process order of an example of a conventional wet etching or wet cleaning method.

第2図において、まずウェットエッチングバス1にウェ
ハ6をセットしたカセット6を所定時間浸漬し、酸化膜
除去や排水処理をかとなう。そのちと第1次水洗バス2
および第2次水洗バス3の頓にカセット6を手動または
搬送装置によって移して、仕上げの水洗処理を行う。仕
上げの水洗処理が終ったカセット6は手動筐たは自動の
搬送装置によりスビンナー水切機4にセットされて、ウ
ェハ表面の水滴が除去される。
In FIG. 2, first, a cassette 6 in which a wafer 6 is set is immersed in a wet etching bath 1 for a predetermined time to remove an oxide film and perform drainage treatment. After that, the first flush bath 2
Then, the cassette 6 is transferred manually or by a conveyance device to the secondary washing bath 3, and a final washing process is performed. The cassette 6 that has undergone the final water washing process is set in the swinner drainer 4 using a manual case or an automatic conveyance device, and water droplets on the wafer surface are removed.

水洗バスの種類と数はウェット処理の目的によって最適
の構或が選択される。これらの処理について共通にいえ
ることは、ウェハ6が液体中と空気中を交互に通ること
である。すなわち、ウヱハ6が各バス間を手動又は自動
の搬送装置によって移動する間はウェハ表面は空気にさ
らされ、且つウェハ6表面の一部領域には液滴が残存し
た状態で次のパスに移される。
The type and number of water washing baths are selected to be optimal depending on the purpose of wet processing. What these processes have in common is that the wafer 6 alternately passes through liquid and air. That is, while the wafer 6 is moved between each bus by a manual or automatic transfer device, the wafer surface is exposed to air, and the wafer 6 is transferred to the next pass with droplets remaining on some areas of the surface. It will be done.

発明が解決しようとする課題 前述の如く、ウェハがウェット処理工程において、ウェ
ハ表面に水滴を形或した筐ま空気中にさらされることに
なる。とくにウヱハ表面を撥水性処理したあとはこのよ
うな水滴がウェハ表面に残り易い。水滴が形或された状
態にあると、水滴中の残渣がウェハ表面に付着し、一旦
付着した残渣はウェハ表面に水滴の痕跡となって残り、
除去するのが困難である。この痕跡がたとえば固体撮影
素子のホトダイオード領域に残ると、この固体撮影素子
を使ったカメラで写した映像画面には、前述の水滴中残
渣の痕跡模様が現われるという問題がある。
Problems to be Solved by the Invention As mentioned above, during the wet processing process, the wafer is exposed to the air inside the casing with water droplets formed on the wafer surface. Such water droplets tend to remain on the wafer surface especially after the wafer surface has been subjected to water repellent treatment. When the water droplet is in a formed state, residue in the water droplet adheres to the wafer surface, and once attached, the residue remains as a water droplet trace on the wafer surface.
Difficult to remove. If these traces remain, for example, in the photodiode region of a solid-state imaging device, there is a problem in that the aforementioned trace pattern of the residue in the water droplets appears on the image screen captured by a camera using this solid-state imaging device.

良好な画像を得ようとすると、固体撮像素子の製造工程
中に誘起される前述のような水滴の痕跡,をなくさなく
てはならない。
In order to obtain good images, it is necessary to eliminate traces of water droplets as mentioned above, which are induced during the manufacturing process of solid-state imaging devices.

課題を解決するための手段 ウェハが空気中に暴露されたとき、水滴を形成しないよ
うにしなければならない。たとえ水滴を形戒しても水滴
中の残渣が痕跡として残るに必要な時間、水滴を一定状
態に保持しないようにしなければならない。そのための
手段として,各パス間を手動!たは自動の搬送装置によ
ってウェハが移動する間、当該ウェハ表面に水洗シャワ
ーを浴びせつづけるようにしたものである。
Means for Solving the Problem It must be ensured that water droplets do not form when the wafer is exposed to air. Even if the water droplet is kept in shape, the water droplet must not be held in a constant state for a period of time necessary for the residue in the water droplet to remain as a trace. As a means to do that, manually change between each pass! While the wafer is being moved by an automatic transfer device or by an automatic transfer device, the surface of the wafer is continuously showered with water.

作  用 前述のような方法によって、空気中に暴露されている間
のウェハ表面の水滴は,たとえ水滴が形或されたとして
も一定位置で水滴が静止状態にあることはなくなる。従
って、水滴中の残渣が痕跡として、ウェハ表面の一定位
置に残ることは解消され、画像の良質な固体撮像素子を
製造することができる。
Operation By using the method described above, water droplets on the wafer surface while exposed to air will not remain stationary at a fixed position even if the water droplets are formed. Therefore, the residue in the water droplets does not remain as traces at a certain position on the wafer surface, and a solid-state imaging device with high quality images can be manufactured.

実施例 第1図は本発明の一実施例の概念図である。ウェットエ
ッチングパス1にはウェハ表面を撥水性にするエッチン
グ液が入っている。このバスで撥水性になったウェハは
第1次水洗バス2に手動1たは自動の搬送装置で移動さ
せられる。この移動の間、シャワーシステムライン8に
よって導びかれた純水によってシャワー9がウェハ表面
に浴びせられるようになる。第1次水洗パスで所定時間
水洗したあと、手動または自動の搬送装置によつて、第
2次水洗パス3ヘウェハは移される。この移動のときも
ウェハ6は空気中にさらされるので、その間はシャワー
9がウェハ6に浴びせられる。
Embodiment FIG. 1 is a conceptual diagram of an embodiment of the present invention. Wet etching pass 1 contains an etching solution that makes the wafer surface water repellent. The wafer that has become water repellent in this bath is moved to the first water washing bath 2 manually or by an automatic transfer device. During this movement, a shower 9 is caused to be applied to the wafer surface by pure water guided by the shower system line 8 . After being washed for a predetermined time in the first washing pass, the wafer is transferred to the second washing pass 3 by a manual or automatic transfer device. Since the wafer 6 is exposed to the air during this movement, the shower 9 is applied to the wafer 6 during this movement.

第2次水洗パス3で最終仕上げの水洗が終ったウヱハ6
はスピンナー水切機4に移設される。この移設の間もウ
ェ・ハ表面は大気中にさらされるので、シャワ9がウヱ
ハ表面に浴びせられるようになっている。スピンナー水
切機4が回転をはじめるとシャワー9を停止するように
なっている。
Ueha 6 after the final washing in the second washing pass 3
is transferred to the spinner drainer 4. Since the wafer surface is exposed to the atmosphere during this relocation, the shower 9 is arranged to shower the wafer surface. When the spinner drainer 4 starts rotating, the shower 9 is stopped.

本実施例に示す如く、一連のウェット処理ラインにおい
て、ウェハが空気中に暴露している間、水洗シャワーを
ウェハ表面に浴びせられるようにしたものである。
As shown in this embodiment, a water washing shower is applied to the wafer surface while the wafer is exposed to the air in a series of wet processing lines.

発明の効果 以上のように本発明によれば、ウェハが空気中に暴露し
ている間、たえず水洗シャワーがウェハ表面に浴びせら
れるので、ウェハが撥水性になったあとでも、ウェハ表
面上の一箇所に水滴が静止することがなくなるので、水
滴中の残渣による痕跡がウヱハ表面に発生することがな
くなる。よつて、このようなウェット処理ラインで製造
された固体撮像素子は痕跡模様の残らない良質な画像を
提供することができる。
Effects of the Invention As described above, according to the present invention, the wafer surface is continuously showered with water while the wafer is exposed to the air, so that even after the wafer becomes water repellent, the area on the wafer surface remains clean. Since the water droplets no longer stand still at certain points, no traces of residue in the water droplets will be generated on the wafer surface. Therefore, a solid-state image sensor manufactured on such a wet processing line can provide high-quality images without leaving any trace patterns.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による一実施例のウェット処理ラインの
概念図、第2図は従来のウェット処理ラインの概念図で
ある。 1・・・・・・ウェットエッチングパヌ、2・・・・・
・第1次水洗ハス、3・・・・・・第2次水洗バス、4
・・・・・・スピンナー水切機、5・・・・・・カセッ
ト、6・・・・・・ウェハ、7・・・・・・パス間のカ
セットの動跡、8・・・・・・シャワーシステムライン
、9・・・・・・シャワー。
FIG. 1 is a conceptual diagram of a wet processing line according to an embodiment of the present invention, and FIG. 2 is a conceptual diagram of a conventional wet processing line. 1... Wet etching panu, 2...
・First flush bath, 3...Second flush bath, 4
...Spinner drainer, 5...Cassette, 6...Wafer, 7...Cassette movement between passes, 8... Shower system line, 9...Shower.

Claims (2)

【特許請求の範囲】[Claims] (1)ウェハが液体中から空気中に引出され、該ウェハ
表面が空気中に暴露され且つ水滴が残存している間、該
ウェハ表面にシャワーを浴びせることを特徴とするウェ
ハ洗浄方法。
(1) A wafer cleaning method characterized in that the wafer is pulled out from a liquid into the air, and the wafer surface is exposed to the air and a shower is applied to the wafer surface while water droplets remain.
(2)シャワーが水洗シャワーである請求項1記載のウ
ェハ洗浄方法。
(2) The wafer cleaning method according to claim 1, wherein the shower is a flush shower.
JP15542989A 1989-06-16 1989-06-16 Cleaning method for wafer Pending JPH0320030A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15542989A JPH0320030A (en) 1989-06-16 1989-06-16 Cleaning method for wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15542989A JPH0320030A (en) 1989-06-16 1989-06-16 Cleaning method for wafer

Publications (1)

Publication Number Publication Date
JPH0320030A true JPH0320030A (en) 1991-01-29

Family

ID=15605822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15542989A Pending JPH0320030A (en) 1989-06-16 1989-06-16 Cleaning method for wafer

Country Status (1)

Country Link
JP (1) JPH0320030A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011212A (en) * 2015-06-25 2017-01-12 株式会社Screenホールディングス Substrate processing method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61249581A (en) * 1985-04-30 1986-11-06 ホ−ヤ株式会社 Washer
JPH02205024A (en) * 1989-02-02 1990-08-14 Nec Yamagata Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61249581A (en) * 1985-04-30 1986-11-06 ホ−ヤ株式会社 Washer
JPH02205024A (en) * 1989-02-02 1990-08-14 Nec Yamagata Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017011212A (en) * 2015-06-25 2017-01-12 株式会社Screenホールディングス Substrate processing method and apparatus

Similar Documents

Publication Publication Date Title
JPH0320030A (en) Cleaning method for wafer
TW420850B (en) Process for production of semiconductor device and cleaning device used therein
JP2000114219A (en) Substrate-processing device
JPS598352Y2 (en) Glass mask cleaning equipment
JP2998259B2 (en) Disk holding device and disk processing method using the same
JPH08236498A (en) Method of air knife drying
JP2850806B2 (en) Substrate drainer
JPH08138997A (en) Method of developing photoresist
JPH0246464A (en) Developing method
JP3099907B2 (en) Semiconductor processing equipment
JPS60163436A (en) Method for cleaning and drying of semiconductor material
JPH09153475A (en) Semiconductor cleaning/drying method and device
JP2756381B2 (en) Cleaning method
JP3879828B2 (en) Photomask blank manufacturing method
JPH08144075A (en) Removal of foreign matter on metal and device therefor
KR100379328B1 (en) Wafer etching method
KR950007964B1 (en) Cleaning apparatus of wafer
KR100713345B1 (en) Method for forming a shallow trench isolation structure of the semiconductor device
KR100598287B1 (en) Method for cleaning the semiconductor device
JP3000997B1 (en) Semiconductor cleaning apparatus and semiconductor device cleaning method
JPH01196129A (en) Formation of thermal oxide film on semiconductor wafer
JPH03228330A (en) Etching device
JPS6488547A (en) Production of semiconductor device
JPH04196212A (en) Cleaning apparatus prior to development
KR19990000357A (en) Semiconductor manufacturing device