JPH03196695A - Manufacture of multilayer thin film circuit substrate - Google Patents

Manufacture of multilayer thin film circuit substrate

Info

Publication number
JPH03196695A
JPH03196695A JP33958389A JP33958389A JPH03196695A JP H03196695 A JPH03196695 A JP H03196695A JP 33958389 A JP33958389 A JP 33958389A JP 33958389 A JP33958389 A JP 33958389A JP H03196695 A JPH03196695 A JP H03196695A
Authority
JP
Japan
Prior art keywords
layer
thin film
insulating layer
wiring layer
film circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33958389A
Other languages
Japanese (ja)
Inventor
Toshiyuki Nakada
敏幸 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP33958389A priority Critical patent/JPH03196695A/en
Publication of JPH03196695A publication Critical patent/JPH03196695A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a circuit formation layer from peeling off an insulating substrate by forming a conductor pattern and an insulator by a bias sputter method of a fixed voltage or below and by constituting a wiring layer having an expansion force balancing with a contraction force of an insulating layer. CONSTITUTION:After an insulating layer 2 is formed between a wiring layer 13 and an insulating substrate 1, an inner stress generates in a direction A and the layer 2 contracts. Therefore, if a conductor pattern 13-1 and an insulator 13-2 of the wiring layer 13 are formed by a bias sputter method applying a fixed negative voltage, an inner stress generates in the formed conductor pattern 13-1 and the insulator 13-2 in an expansion direction, and an expansion force generates in an opposite direction of contraction force of the insulating layer 2, that is, in a direction B and balances with a contraction force of the insulating layer 2 in each wiring layer 13. Thereby, inner stress between the insulating layer 2 and the wiring layer 13 balances, thereby preventing a circuit formation layer from peeling off an insulating substrate.

Description

【発明の詳細な説明】 〔概 要〕 各種電子機器の構成に広く使用される多層薄膜回路基板
の製造方法に関し、 各層の絶縁層と配線層の内部応力がバランスしてその回
路形成層が絶縁基体より剥離しない多層薄膜回路基板製
造方法の提供を目的とし、絶縁基体の回路形成面に一定
厚みの絶縁層と導体パターンを有する配線層とを順次形
成する多層薄膜回路基板の製造方法において、該導体パ
ターンと絶縁体を一定電圧以下のバイアススパッタ法で
形成して、上記絶縁層の収縮力と均衡した膨張力を有す
る該配線層を構成するか、または上記導体パターンを膨
張力の大きなめっき法で形成して、上記絶縁層の収縮力
と均衡した膨張力を有する配線層を形成する。
[Detailed Description of the Invention] [Summary] Regarding the manufacturing method of multilayer thin film circuit boards widely used in the construction of various electronic devices, the internal stresses of the insulating layer and wiring layer of each layer are balanced and the circuit forming layer is insulated. A method for manufacturing a multilayer thin film circuit board in which an insulating layer of a constant thickness and a wiring layer having a conductive pattern are sequentially formed on the circuit forming surface of an insulating base, with the aim of providing a method for manufacturing a multilayer thin film circuit board that does not peel off from the base. Either the conductor pattern and the insulator are formed by a bias sputtering method at a constant voltage or lower to form the wiring layer having an expansion force balanced with the contraction force of the insulating layer, or the conductor pattern is formed by a plating method with a large expansion force. A wiring layer having an expansion force balanced with the contraction force of the insulating layer is formed.

r産業上の利用分野〕 本発明は、各種電子機器の構成に広く使用される多層薄
膜回路基板の製造方法に関する。
r Industrial Application Field] The present invention relates to a method for manufacturing a multilayer thin film circuit board that is widely used in the construction of various electronic devices.

最近、大型電算機あるいは通信機器等に使用される多層
薄膜回路基板は回路規模の増大と高速化の要求に伴い、
絶縁基体に形成される導体パターンは各層において微細
化と高密度化が行われるとともに多層化が必要となって
いる。そのため絶縁基体のパターン形成面側に一定厚み
の絶縁層と導体パターンををする配線層とを順次形成し
て積層している。しかし、絶縁層に用いられるポリイミ
ド樹脂が収縮方向の内部応力を有しているので積層され
た薄膜層が収縮しようとして絶縁基体の各側端面で境界
面剥離を起し易く、各層の絶縁層と配線層の内部応力が
バランスして薄膜層が収縮しない新しい多層薄膜回路基
板の製造方法が要求されている。
Recently, multilayer thin film circuit boards used in large computers and communication equipment are required to increase circuit size and speed.
Conductive patterns formed on insulating substrates are becoming finer and denser in each layer, and require multilayering. Therefore, an insulating layer of a constant thickness and a wiring layer forming a conductor pattern are successively formed and laminated on the pattern-forming surface side of the insulating substrate. However, since the polyimide resin used for the insulating layer has internal stress in the direction of contraction, the laminated thin film layers tend to shrink and peel off at the interface on each side end surface of the insulating substrate, and the insulating layer of each layer tends to shrink. There is a need for a new method for manufacturing multilayer thin film circuit boards in which the internal stress of the wiring layers is balanced and the thin film layers do not shrink.

[従来の技術] 従来の多層薄膜回路基板の製造方法は、第3図の側断面
図に示すように絶縁基体10回路形成面側全体に約10
〜40μmのポリイミド樹脂よりなる絶縁層2を形成し
、その上面に導体パターン3−1と絶縁体3−2よりな
る約5〜20μmの配線層3を設けて第一層が形成され
、このような絶縁層2と配線層3を順次重畳することに
より、絶縁基体lの主面側に多層の薄膜回路層が形成さ
れている。
[Prior Art] In the conventional method for manufacturing a multilayer thin film circuit board, as shown in the side cross-sectional view of FIG.
A first layer is formed by forming an insulating layer 2 made of polyimide resin with a thickness of ~40 μm, and providing a wiring layer 3 with a thickness of about 5 to 20 μm made of a conductive pattern 3-1 and an insulator 3-2 on the upper surface of the insulating layer 2. By sequentially overlapping the insulating layer 2 and the wiring layer 3, a multilayer thin film circuit layer is formed on the main surface side of the insulating substrate l.

[発明が解決しようとする課題〕 以上説明した従来の多層薄膜回路基板の製造方法で問題
となるのは、第4図に示すように絶縁基体1の回路形成
面側に積層された薄膜回路層のそれぞれ絶縁層2がポリ
イミド樹脂で形成され、そのポリイミド樹脂の収縮する
方向への内部応力を有しているので積層された薄膜回路
層が収縮する方向、即ち矢印六方向に作用し、その収縮
力により回路基板端面部の絶縁層2と絶縁基体lの境界
面で剥離を起こすという問題が生じている。
[Problems to be Solved by the Invention] The problem with the conventional method of manufacturing a multilayer thin film circuit board described above is that the thin film circuit layer laminated on the circuit forming surface side of the insulating substrate 1 as shown in FIG. Each of the insulating layers 2 is made of polyimide resin and has internal stress in the direction of contraction of the polyimide resin, which acts in the direction of contraction of the laminated thin film circuit layer, that is, in the six directions of arrows, and causes the contraction. A problem arises in that the force causes peeling at the interface between the insulating layer 2 and the insulating base l at the end surface of the circuit board.

本発明は上記のような問題点に鑑み、各層の絶縁層と配
線層の内部応力がバランスしてその回路形成層が絶縁基
体より剥離しない多層薄膜回路基板製造方法の提供を目
的とする。
In view of the above-mentioned problems, the present invention aims to provide a method for manufacturing a multilayer thin film circuit board in which the internal stresses of the insulating layer and wiring layer of each layer are balanced and the circuit forming layer does not peel off from the insulating base.

(課題を解決するための手段〕 本発明は、第1図に示すように絶縁基体lの回路形成面
に一定厚みの絶縁層2と導体パターンを有する配線層1
3とを順次形成した多層薄膜回路基板において、41体
パターン13−1と絶縁体13−2を一定電圧以下のバ
イアススパッタ法で形成して、上記絶縁層2の収縮力と
均衡した膨張力を有する該配線層I3を構成するか、ま
たは、上記導体パターン13−1を膨張力の大きなめっ
き法で形成して、上記絶縁層2の収縮力と均衡した膨張
力を有する配線層13を形成する。
(Means for Solving the Problems) As shown in FIG.
In the multilayer thin film circuit board in which 3 and 3 are sequentially formed, the 41-body pattern 13-1 and the insulator 13-2 are formed by bias sputtering at a constant voltage or less, so that an expansion force balanced with the contraction force of the insulating layer 2 is applied. Alternatively, the conductor pattern 13-1 is formed by a plating method with a large expansion force to form the wiring layer 13 having an expansion force balanced with the contraction force of the insulating layer 2. .

2には膨張方向の内部応力が発生して、各配線層13は
第1図に示すように絶縁層2の収縮力と反対方向、即ち
矢印B方向の膨張力が発生して絶縁層2の収縮力と均衡
する。また前記導体パターン13−1のみを同じく絶縁
層2の内部応力と反対方向の内部応力が発生するめっき
法で形成しても、各配線層13は絶縁層2の収縮力が均
衡して薄膜回路形成部の内部応力が少なくなるため、積
層された絶縁層2と配線層13で発生するそれぞれの力
がキャンセルされて絶縁基体からの剥離を防止すること
が可能となる。
As shown in FIG. Balances the contractile force. Furthermore, even if only the conductor pattern 13-1 is formed using a plating method that generates an internal stress in the opposite direction to the internal stress of the insulating layer 2, each wiring layer 13 can be formed into a thin film circuit by balancing the contraction force of the insulating layer 2. Since the internal stress in the forming portion is reduced, the respective forces generated in the laminated insulating layer 2 and wiring layer 13 are canceled, making it possible to prevent separation from the insulating base.

〔作 用〕[For production]

本発明では、第1図に示すように各配線層13間に形成
されたポリイミド樹脂よりなるそれぞれの絶縁層2は、
形成後に矢印A方向の内部応力が発生して収縮するので
、配線層13の導体パターン131と絶縁体13−2を
第2図に示すような負の一定電圧を印加したバイアスス
パッタ法で形成することにより、形成された導体パター
ン13−1と絶縁体13〔実 施 例〕 以下図面に示した実施例に基づいて本発明の詳細な説明
する。
In the present invention, as shown in FIG. 1, each insulating layer 2 made of polyimide resin formed between each wiring layer 13 is
After formation, internal stress occurs in the direction of arrow A and shrinks, so the conductor pattern 131 and insulator 13-2 of the wiring layer 13 are formed by bias sputtering with a constant negative voltage applied as shown in FIG. Accordingly, the conductor pattern 13-1 and the insulator 13 formed [Example] The present invention will be described in detail below based on the example shown in the drawings.

第1図は本発明を説明する側断面図を示し、図中におい
て、第3図と同一部材には同一記号が付しである。
FIG. 1 shows a side sectional view for explaining the present invention, and in the figure, the same members as in FIG. 3 are given the same symbols.

本発明の多層薄膜回路基板の製造方法は、絶縁基体10
回路形成面側全体に被膜された約10〜40μmのポリ
イミド樹脂よりなる絶縁層2の上面に、第2図に示すよ
うに負の一定電圧を印加したバイアススパッタ法により
、前記絶縁層2に発生する収縮応力と均衡する膨張応力
を備えた約5〜20μmの導体パターン13−1と絶縁
体13−2からなる配線層13を形成し、このような絶
縁層2と配線層13を順次重畳することにより絶縁基体
lの主面側に多層の薄膜回路層を形成している。
The method for manufacturing a multilayer thin film circuit board of the present invention includes an insulating substrate 10
As shown in FIG. 2, a constant negative voltage is applied to the upper surface of the insulating layer 2 made of polyimide resin with a thickness of approximately 10 to 40 μm, which is coated on the entire circuit forming surface side. A wiring layer 13 consisting of a conductive pattern 13-1 of approximately 5 to 20 μm and an insulator 13-2 having an expansion stress balanced with the contraction stress of As a result, a multilayer thin film circuit layer is formed on the main surface side of the insulating substrate l.

また、めっきの諸条件1例えば液濃度、電流密度、めっ
き温度、添加物等を調整して、配線層の前記導体パター
ン13−1を銅めっきにより形成することにより、絶縁
層2の内部応力と反対方向の内部応力が発生する配線層
13を形成する。
In addition, by adjusting plating conditions 1, such as liquid concentration, current density, plating temperature, additives, etc., and forming the conductor pattern 13-1 of the wiring layer by copper plating, the internal stress of the insulating layer 2 can be reduced. A wiring layer 13 is formed in which internal stress occurs in the opposite direction.

その結果、第1図に示すように積層された絶縁層2と配
線層13がそれぞれ相反して均衡する内部応力を有して
いるので、その内部応力が互いキャンセルされて薄膜回
路形成部の内部応力が少な(なるため、絶縁基体1より
薄膜回路形成部の剥離を防止することができる。
As a result, as shown in FIG. 1, the laminated insulating layer 2 and wiring layer 13 have internal stresses that are mutually balanced and cancel each other out, so that Since the stress is small, peeling of the thin film circuit forming portion from the insulating substrate 1 can be prevented.

[発明の効果] 以上の説明から明らかなように本発明によれば極めて簡
単な製造方法で、絶縁層と配線層の内部応力が均衡する
ことにより薄膜回路形成部の内部応力が少なくなって絶
縁基体1からの剥離を防止することができる等の利点が
あり、著しい信頼性向上の効果が期待できる多層薄膜回
路基板の製造方法を提供することができる。
[Effects of the Invention] As is clear from the above description, according to the present invention, the internal stress of the insulating layer and the wiring layer is balanced by an extremely simple manufacturing method, thereby reducing the internal stress of the thin film circuit forming part and improving insulation. It is possible to provide a method for manufacturing a multilayer thin film circuit board, which has advantages such as being able to prevent peeling from the base 1 and can be expected to significantly improve reliability.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の詳細な説明する側断面図、第2図は作
用を説明する図、 第3図は多層薄膜回路基板を示す側断面図、第4図は課
題を示す側断面図である。 図において、 1は絶縁基体、     2は絶縁層、13は配線層、 13−1は導体パターン、 13−2は絶縁体、−一う
A A← 第2図 1)−T、1’+’°J’l’T6[臣コ第4図
FIG. 1 is a side sectional view explaining the present invention in detail, FIG. 2 is a side sectional view explaining the operation, FIG. 3 is a side sectional view showing a multilayer thin film circuit board, and FIG. 4 is a side sectional view showing problems. be. In the figure, 1 is an insulating base, 2 is an insulating layer, 13 is a wiring layer, 13-1 is a conductive pattern, 13-2 is an insulator, -1 A A← Fig. 2 1) -T, 1'+'°J'l'T6 [Omiko Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)絶縁基体(1)の回路形成面に一定厚みの絶縁層
(2)と導体パターンを有する配線層(13)とを順次
形成する多層薄膜回路基板の製造方法において、 該導体パターン(13−1)と絶縁体(13−2)を一
定電圧以下のバイアススパッタ法で形成して、上記絶縁
層(2)の収縮力と均衡した膨張力を有する該配線層(
13)を構成することを特徴とする多層薄膜回路基板の
製造方法。
(1) A method for manufacturing a multilayer thin film circuit board in which an insulating layer (2) of a constant thickness and a wiring layer (13) having a conductive pattern are sequentially formed on the circuit forming surface of the insulating substrate (1), comprising: -1) and the insulator (13-2) are formed by bias sputtering at a constant voltage or lower, and the wiring layer (13-2) has an expansion force balanced with the contraction force of the insulating layer (2).
13) A method for manufacturing a multilayer thin film circuit board, comprising:
(2)上記1体パターン(13−1)を膨張力の大きな
めっき法で形成して、上記絶縁層(2)の収縮力と均衡
した膨張力を有する配線層(13)を形成したことを特
徴とする第1項記載の多層薄膜回路基板の製造方法。
(2) The one-piece pattern (13-1) is formed by a plating method with a large expansion force to form a wiring layer (13) having an expansion force balanced with the contraction force of the insulating layer (2). A method for manufacturing a multilayer thin film circuit board according to item 1.
JP33958389A 1989-12-26 1989-12-26 Manufacture of multilayer thin film circuit substrate Pending JPH03196695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33958389A JPH03196695A (en) 1989-12-26 1989-12-26 Manufacture of multilayer thin film circuit substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33958389A JPH03196695A (en) 1989-12-26 1989-12-26 Manufacture of multilayer thin film circuit substrate

Publications (1)

Publication Number Publication Date
JPH03196695A true JPH03196695A (en) 1991-08-28

Family

ID=18328847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33958389A Pending JPH03196695A (en) 1989-12-26 1989-12-26 Manufacture of multilayer thin film circuit substrate

Country Status (1)

Country Link
JP (1) JPH03196695A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101111367B1 (en) * 2003-12-22 2012-02-24 닛토덴코 가부시키가이샤 Wiring circuit board and production method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176196A (en) * 1985-01-31 1986-08-07 株式会社日立製作所 Wiring board for module
JPS63307797A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Multilayer interconnection substrate and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61176196A (en) * 1985-01-31 1986-08-07 株式会社日立製作所 Wiring board for module
JPS63307797A (en) * 1987-06-10 1988-12-15 Hitachi Ltd Multilayer interconnection substrate and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101111367B1 (en) * 2003-12-22 2012-02-24 닛토덴코 가부시키가이샤 Wiring circuit board and production method thereof

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