JPH0319628B2 - - Google Patents
Info
- Publication number
- JPH0319628B2 JPH0319628B2 JP57198978A JP19897882A JPH0319628B2 JP H0319628 B2 JPH0319628 B2 JP H0319628B2 JP 57198978 A JP57198978 A JP 57198978A JP 19897882 A JP19897882 A JP 19897882A JP H0319628 B2 JPH0319628 B2 JP H0319628B2
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- polyfluorocarbon
- film
- optical recording
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 30
- -1 polytetrafluoroethylene Polymers 0.000 description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/251—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials dispersed in an organic matrix
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
本発明は、レーザ光の熱作用により情報を記録
するレーザ記録に関し、特に経時安定性に優れ、
かつ高感度の光学記録媒体およびその製造方法に
関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to laser recording that records information by the thermal action of laser light, and has particularly excellent stability over time.
The present invention also relates to a highly sensitive optical recording medium and a method for manufacturing the same.
レーザ記録のうち、レーザ光の熱作用により情
報を記録するヒートモード型レーザ記録は、大容
量フアイルメモリとしての利用が検討されてい
る。従来、このような記録に用いる記録媒体とし
ては、Ti，Bi，Teなどの金属薄膜あるいはAs，
Se，Te，Geなどからなるカルコゲナイトガラス
薄膜が知られている。そして、これら記録媒体の
うちでも、Te薄膜が感度やコントラストなどの
記録特性の点で優れている。しかし、Te薄膜は
耐候性の点で劣るため、これを空気中に放置する
と酸化劣化が生じ、反射率および透過率が低下す
る。そのため、長期間にわたる使用や保存により
記録感度の低下やＳ／Ｎの劣化が生じるという問
題点を有している。 Among laser recording, heat mode laser recording, in which information is recorded by the thermal action of laser light, is being considered for use as a large-capacity file memory. Conventionally, recording media used for such recording have been thin films of metals such as Ti, Bi, Te, etc., or thin films of metals such as As,
Chalcogenite glass thin films composed of Se, Te, Ge, etc. are known. Among these recording media, Te thin films are superior in terms of recording characteristics such as sensitivity and contrast. However, Te thin films have poor weather resistance, so if they are left in the air, they will undergo oxidative deterioration, resulting in a decrease in reflectance and transmittance. Therefore, there are problems in that recording sensitivity decreases and S/N ratio deteriorates due to long-term use and storage.
そこで、本発明の目的は、上述の問題点を解決
し、耐候性に優れ、かつ記録感度の高い光学記録
媒体を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide an optical recording medium with excellent weather resistance and high recording sensitivity.
本発明の他の目的は、このような光学記録媒体
を簡単な工程で製造することのできる製造方法を
提供することにある。 Another object of the present invention is to provide a method of manufacturing such an optical recording medium through simple steps.
そのために、本発明光学記録媒体は、Teを含
有させたポリフルオロカーボンのスパツタ膜を基
板上に被着して構成する。 To this end, the optical recording medium of the present invention is constructed by depositing a sputtered film of polyfluorocarbon containing Te on a substrate.
かかる光学記録媒体を製造するにあたつて、本
発明方法では、基板に対して、Teおよびポリフ
ルオロカーボンを同時にスパツタすることによ
り、Teを含有したポリフルオロカーボンのスパ
ツタ膜を基板上に形成する。 In manufacturing such an optical recording medium, in the method of the present invention, a sputtered film of polyfluorocarbon containing Te is formed on the substrate by simultaneously sputtering Te and polyfluorocarbon onto the substrate.
以下に図面を参照して本発明を詳細に説明す
る。 The present invention will be described in detail below with reference to the drawings.
まず、本発明による記録媒体の製造方法を先に
説明する。第１図は本発明による光学記録媒体の
製造方法を実施するための装置の一例を示す模式
図であり、本例では２極高周波スパツタ装置を用
いている。図中、１は真空容器、２は容器１への
ガス導入口、３は容器１からの排気口、４および
４′は互に対向して配置した高周波電極、５は電
極４上に載置した円板状のTeターゲツト、６は
Teターゲツト５上に載置したポリフルオロカー
ボン片、７は電極４′に取付けた基板である。 First, a method for manufacturing a recording medium according to the present invention will be explained first. FIG. 1 is a schematic diagram showing an example of an apparatus for carrying out the method for manufacturing an optical recording medium according to the present invention, and in this example, a bipolar high-frequency sputtering apparatus is used. In the figure, 1 is a vacuum container, 2 is a gas inlet to the container 1, 3 is an exhaust port from the container 1, 4 and 4' are high frequency electrodes placed opposite each other, and 5 is placed on the electrode 4. The disc-shaped Te target 6 is
A piece of polyfluorocarbon is placed on the Te target 5, and 7 is a substrate attached to the electrode 4'.
本発明光学記録媒体の製造にあたつては、ま
ず、真空容器１を真空に排気した後、不活性ガス
をガス導入口２より容器１内へ導入する。その
後、高周波電極４と４′との間に高周波電圧を印
加して放電を起こさせる。ここで、不活性ガスと
してはArやHeなどを用いることができる。この
放電によりターゲツト５および６をスパツタして
基板７上にスパツタ膜を形成するわけであるが、
本例では、ターゲツトとしては円板状のTeター
ゲツト５とその上に格子点状に規則的に配置した
ポリフルオロカーボン片６とからなるものを用い
る。このようなターゲツトを用いることにより、
ポリフルオロカーボン片６の個数を変え、以て
Teとポリフルオロカーボンとの表面積比を適切
に選定することにより、基板７上に得られるスパ
ツタ膜の組成を容易に制御できる。ここで、ポリ
フルオロカーボンとしては、ポリ四弗化エチレ
ン、ポリ三弗化エチレン、ポリ三弗化塩化エチレ
ン、ポリ六弗化プロピレンなどを用いることがで
きる。以上の工程により、Teを含有したポリフ
ルオロカーボンのスパツタ膜が基板７上に形成さ
れる。 In manufacturing the optical recording medium of the present invention, first, the vacuum container 1 is evacuated to vacuum, and then an inert gas is introduced into the container 1 through the gas inlet 2. Thereafter, a high frequency voltage is applied between the high frequency electrodes 4 and 4' to cause discharge. Here, Ar, He, or the like can be used as the inert gas. This discharge sputters the targets 5 and 6 to form a sputtered film on the substrate 7.
In this example, the target consists of a disc-shaped Te target 5 and polyfluorocarbon pieces 6 regularly arranged on the disc-shaped Te target 5 in the form of lattice points. By using such targets,
By changing the number of polyfluorocarbon pieces 6,
By appropriately selecting the surface area ratio of Te and polyfluorocarbon, the composition of the sputtered film obtained on the substrate 7 can be easily controlled. Here, as the polyfluorocarbon, polytetrafluoroethylene, polytrifluoroethylene, polytrifluorochloroethylene, polyhexafluoropropylene, etc. can be used. Through the above steps, a sputtered film of polyfluorocarbon containing Te is formed on the substrate 7.
なお、かかるターゲツトとしては、上例とは逆
にポリフルオロカーボン円板上にTe片を配置し
たものを用いても同じようにTe含有ポリフルオ
ロカーボンのスパツタ膜を形成することができ
る。更にまた、Te円板とポリフルオロカーボン
円板の２つのターゲツトを用い、基板を回転しな
がらこの２つのターゲツトを同時にスパツタする
ことによつてもこの種のスパツタ膜を形成するこ
とができる。 Incidentally, as such a target, a sputtered film of Te-containing polyfluorocarbon can be formed in the same manner by using a target in which Te pieces are arranged on a polyfluorocarbon disk, contrary to the above example. Furthermore, this type of sputtered film can also be formed by using two targets, a Te disk and a polyfluorocarbon disk, and sputtering these two targets simultaneously while rotating the substrate.
以上のようにして得られたスパツタ膜では、
Teが非晶質状態で存在する。これはTeとポリフ
ルオロカーボンとが同時にスパツタされたために
生ずるものと考えられる。そして、示差熱測定を
行なうと、100〜150℃の範囲に非晶質Teの結晶
化により発熱ピークが観測された。この結晶化に
よりスパツタ膜の反射率は増加し、透過率は低下
する。 In the sputtered film obtained as above,
Te exists in an amorphous state. This is thought to be caused by the simultaneous sputtering of Te and polyfluorocarbon. Then, when performing differential thermal measurement, an exothermic peak was observed in the range of 100 to 150°C due to crystallization of amorphous Te. Due to this crystallization, the reflectance of the sputtered film increases and the transmittance decreases.
従つて、Te含有ポリフルオロカーボンのスパ
ツタ膜にレーザ光を照射してその照射部分を加熱
し、それにより、照射部分の反射率あるいは透過
率を変化させることによつて情報をレーザ記録す
ることができる。あるいはまた、加熱による溶融
および蒸発を利用して孔を形成することによつて
も情報を記録することが可能である。 Therefore, information can be recorded by laser by irradiating a sputtered film of Te-containing polyfluorocarbon with laser light and heating the irradiated area, thereby changing the reflectance or transmittance of the irradiated area. . Alternatively, information can also be recorded by forming pores using melting and evaporation by heating.
ここで上述の結晶化現象を利用して記録を行う
場合には、Te含有ポリフルオロカーボンのスパ
ツタ膜上に透明性のよい高分子膜、例えばアクリ
ル膜あるいはTeを含まないポリフルオロカーボ
ンスパツタ膜（例えばポリ四弗化エチレンスパツ
タ膜）あるいはSiO2膜などの誘電体膜などを保
護膜として設けてTe含有ポリフルオロカーボン
スパツタ膜の蒸発を防ぐ構造とするのが好適であ
る。さらにまた、溶融および蒸発現象を利用して
記録を行なう場合には、膜をあらかじめ熱処理し
て結晶化させた膜を用いることもできる。 When recording using the above-mentioned crystallization phenomenon, a highly transparent polymer film, such as an acrylic film, or a polyfluorocarbon sputtered film that does not contain Te (for example, It is preferable to provide a structure in which a dielectric film such as a polytetrafluoroethylene sputtered film or a SiO 2 film is provided as a protective film to prevent evaporation of the Te-containing polyfluorocarbon sputtered film. Furthermore, when recording is performed using melting and evaporation phenomena, it is also possible to use a film that has been heat-treated and crystallized in advance.
本発明による光学記録媒体は、光の吸収効率が
高く、しかも非晶質Teの結晶化温度も低い。ま
た、溶融および蒸発などの特性もTe膜と大きな
差異がない。従つて、本発明光学記録媒体は感度
およびコントラストなどの記録特性の点で優れて
いる。さらに、本発明による光学記録媒体の利点
は優れた耐候性を有していることにあり、そのた
め、光学記録媒体の長期間にわかる使用および保
存が可能である。この耐候性向上の原因は明らか
ではないが、Teとポリフルオロカーボンとが同
時にスパツタされて膜中に共存するために生ずる
と考えられる。その他、本発明光学記録媒体は通
常のスパツタ装置を用いて製造することができる
ので、均一な膜厚の膜が得やすく、しかもその作
製が容易であるという利点を有している。 The optical recording medium according to the present invention has high light absorption efficiency and low crystallization temperature of amorphous Te. Furthermore, there are no major differences in properties such as melting and evaporation from Te films. Therefore, the optical recording medium of the present invention is excellent in recording characteristics such as sensitivity and contrast. Furthermore, the advantage of the optical recording medium according to the invention is that it has excellent weather resistance, so that long-term use and storage of the optical recording medium is possible. Although the cause of this improvement in weather resistance is not clear, it is thought that it occurs because Te and polyfluorocarbon are sputtered at the same time and coexist in the film. In addition, since the optical recording medium of the present invention can be manufactured using an ordinary sputtering device, it has the advantage that it is easy to obtain a film having a uniform thickness and is also easy to manufacture.
以下に本発明の実施例を示す。 Examples of the present invention are shown below.
（実施例 １）
10cm径のTe円板上に５mm角のポリ四弗化エチ
レンを格子点状に規則的に配置したものをターゲ
ツトとしてスパツタを行なつた。Teとポリ四弗
化エチレンとの表面積比は９：１とし、基板には
厚さ1.5mmのポリメチルメタクリレート樹脂を用
いた。スパツタ条件はArガス圧１×10-2Torrお
よび放電電力100Wであり、約１分間スパツタし
たところ、基板上に20nmのスパツタ膜が形成さ
れた。(Example 1) Sputtering was performed using a 5 mm square polytetrafluoroethylene regularly arranged in a lattice pattern on a 10 cm diameter Te disk as a target. The surface area ratio of Te and polytetrafluoroethylene was 9:1, and the substrate was made of polymethyl methacrylate resin with a thickness of 1.5 mm. The sputtering conditions were Ar gas pressure of 1×10 -2 Torr and discharge power of 100 W, and after sputtering for about 1 minute, a 20 nm sputtered film was formed on the substrate.
ついで、この光学記録媒体に波長830nmの
GaAs半導体レーザで記録と再生を行なつた。そ
の結果を第２図に示す。ここで、記録媒体上のレ
ーザパワー6mWおよびビーム径1.6μmで記録を
行ない、0.5mWのレーザパワーで再生を行なつ
た。第２図の横軸は半導体レーザのパルス幅、
（nsec）、縦軸は再生信号出力、すなわち記録前後
の反射光強度の差（相対値）をそれぞれ表わして
いる。また、図中の白丸は反射強度が記録前に比
べて記録後に減少した場合を示しており、黒丸は
逆に増加した場合を示している。つまり、白丸の
パルス幅では膜が溶融および蒸発により孔があい
ていることを、また黒丸のパルス幅では孔があか
ずに結晶化が起こつていることを示している。こ
の結果から、本実施例の記録媒体が高い記録感度
を有していること、および記録は溶融・蒸発によ
る孔形成を利用するのに適した記録媒体であるこ
とがわかつた。 Next, this optical recording medium is exposed to a wavelength of 830 nm.
Recording and playback were performed using a GaAs semiconductor laser. The results are shown in FIG. Here, recording was performed on the recording medium with a laser power of 6 mW and a beam diameter of 1.6 μm, and reproduction was performed with a laser power of 0.5 mW. The horizontal axis in Figure 2 is the pulse width of the semiconductor laser,
(nsec), and the vertical axis represents the reproduction signal output, that is, the difference (relative value) between the reflected light intensities before and after recording. Furthermore, white circles in the figure indicate cases in which the reflection intensity decreases after recording compared to before recording, and black circles indicate cases in which it increases. In other words, the pulse width of the white circles indicates that the film has pores due to melting and evaporation, and the pulse width of the black circles indicates that crystallization is occurring without forming pores. From these results, it was found that the recording medium of this example had high recording sensitivity, and that it was a recording medium suitable for recording using pore formation by melting and evaporation.
つぎに、本実施例の記録媒体に対して40℃、90
％相対湿度の環境下で加速度劣化テストを行なつ
たところ、４ケ月経過後にも反射率の低下を示さ
なかつた。Te蒸着膜に対して同様の環境下で加
速度劣化テストを行なつたところ、約２週間で酸
化劣化のために反射率が初期値の80％に低下し
た。この結果から、本実施例の記録媒体が極めて
耐候性に優れていることがわかつた。 Next, the recording medium of this example was heated at 40°C and 90°C.
When an accelerated deterioration test was conducted in an environment of % relative humidity, there was no decrease in reflectance even after 4 months had passed. When an accelerated deterioration test was conducted on a Te vapor-deposited film under a similar environment, the reflectance decreased to 80% of its initial value in about two weeks due to oxidative deterioration. From this result, it was found that the recording medium of this example had extremely excellent weather resistance.
（実施例 ２）
実施例１のポリ四弗化エチレンの代わりにポリ
三弗化塩化エチレンを用い、その他は実施例１と
同様にして記録媒体を形成したところ、記録感度
および経時安定性ともに実施例１と同様な結果が
得られた。(Example 2) When a recording medium was formed in the same manner as in Example 1 except that polytetrafluoroethylene was used in place of polytetrafluoroethylene in Example 1, the recording sensitivity and stability over time were both good. Similar results to Example 1 were obtained.
（実施例 ３）
実施例１のTeとポリ四弗化エチレンの表面積
比を１：１とし、スパツタ条件を実施例１と同じ
となして約３分間スパツタし、基板上に厚さ
50nmのスパツタ膜を形成した。そのスパツタ膜
の上にさらにポリ四弗化エチレンをターゲツトと
し、厚さ100nmのポリ四弗化エチレンスパツタ膜
を保護膜として形成した。(Example 3) The surface area ratio of Te of Example 1 and polytetrafluoroethylene was set to 1:1, and sputtering was performed for about 3 minutes under the same sputtering conditions as Example 1.
A sputtered film of 50 nm was formed. On top of the sputtered film, a polytetrafluoroethylene sputtered film with a thickness of 100 nm was further formed as a protective film using polytetrafluoroethylene as a target.
この記録媒体に対して、実施例１と同様に半導
体レーザで記録と再生を行なつた結果を第３図に
示す。本実施例では、Teを含有したスパツタ膜
上にポリ四弗化エチレンのスパツタ膜が存在する
ため、結晶化によつて記録が行なわれる。従つ
て、第３図では、記録によつて反射率増加が生じ
ている。第３図から、溶融および蒸発を利用した
実施例１に較べ、結晶化を利用した本実施例の場
合の方が再生信号出力に低下がみられるが、記録
感度は実施例１と同様に高く、しかもまた記録層
上に保護層を設けているので耐候性など経時安定
性が実施例１より優れていることが期待できる。 Recording and reproduction were performed on this recording medium using a semiconductor laser in the same manner as in Example 1, and the results are shown in FIG. In this example, since the polytetrafluoroethylene sputter film is present on the Te-containing sputter film, recording is performed by crystallization. Therefore, in FIG. 3, an increase in reflectance occurs due to recording. From FIG. 3, it can be seen that compared to Example 1, which uses melting and evaporation, the reproduced signal output in this example, which uses crystallization, is lower, but the recording sensitivity is high as in Example 1. Furthermore, since a protective layer is provided on the recording layer, it can be expected that stability over time such as weather resistance is superior to Example 1.
以上説明したように、本発明光学記録媒体は、
高感度の優れた記録特性を有し、しかも経時安定
性の点でも優れている。さらに、本発明光学記録
媒体は通常のスパツタ法を利用して製造できるの
で、その製造工程が簡便であるという利点を有し
ている。 As explained above, the optical recording medium of the present invention has
It has excellent recording characteristics with high sensitivity and is also excellent in terms of stability over time. Furthermore, since the optical recording medium of the present invention can be manufactured using the usual sputtering method, it has the advantage that the manufacturing process is simple.
従つて、本発明記録媒体は大容量フアイルメモ
リとして有効に適用することができる。 Therefore, the recording medium of the present invention can be effectively applied as a large capacity file memory.
第１図は本発明の光学記録媒体の製造方法を実
施するための装置の一例を示す模式図、第２図お
よび第３図は本発明光学記録媒体の記録特性を示
す特性曲線図である。
１……真空容器、２……ガス導入口、３……ガ
ス排気口、４，４′……高周波電極、５……円板
状のTeターゲツト、６……ポリフルオロカーボ
ン片、７……基板。
FIG. 1 is a schematic diagram showing an example of an apparatus for carrying out the method for manufacturing an optical recording medium of the present invention, and FIGS. 2 and 3 are characteristic curve diagrams showing recording characteristics of the optical recording medium of the present invention. 1... Vacuum container, 2... Gas inlet, 3... Gas exhaust port, 4, 4'... High frequency electrode, 5... Disc-shaped Te target, 6... Polyfluorocarbon piece, 7... Substrate .
Claims (1)
カーボンのスパツタ膜を前記基板上に被着したこ
とを特徴とする光学記録媒体。 ２ 特許請求の範囲第１項記載の光学記録媒体に
おいて、前記スパツタ膜の上に透明保護膜を設け
たことを特徴とする光学記録媒体。 ３ 基板に対して、Teおよびポリフルオロカー
ボンを同時にスパツタすることによりTeを含有
したポリフルオロカーボンのスパツタ膜を前記基
板上に得ることを特徴とする光学記録媒体の製造
方法。[Scope of Claims] 1. An optical recording medium comprising a substrate, and a sputtered film of polyfluorocarbon containing Te is deposited on the substrate. 2. The optical recording medium according to claim 1, characterized in that a transparent protective film is provided on the sputtered film. 3. A method for producing an optical recording medium, which comprises simultaneously sputtering Te and polyfluorocarbon onto a substrate to obtain a sputtered polyfluorocarbon film containing Te on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198978A JPS5990244A (en) | 1982-11-15 | 1982-11-15 | Optical recording material and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57198978A JPS5990244A (en) | 1982-11-15 | 1982-11-15 | Optical recording material and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5990244A JPS5990244A (en) | 1984-05-24 |
| JPH0319628B2 true JPH0319628B2 (en) | 1991-03-15 |
Family
ID=16400084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57198978A Granted JPS5990244A (en) | 1982-11-15 | 1982-11-15 | Optical recording material and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5990244A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008197046A (en) * | 2007-02-15 | 2008-08-28 | Aisan Ind Co Ltd | Resolver |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55126480A (en) * | 1979-03-26 | 1980-09-30 | Hitachi Ltd | Recording member |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
| JPS589233A (en) * | 1981-07-10 | 1983-01-19 | Toshiba Corp | Optical information recording medium |
-
1982
- 1982-11-15 JP JP57198978A patent/JPS5990244A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55126480A (en) * | 1979-03-26 | 1980-09-30 | Hitachi Ltd | Recording member |
| JPS5662192A (en) * | 1979-10-29 | 1981-05-27 | Nippon Telegr & Teleph Corp <Ntt> | Medium for optical recording use and preparation thereof |
| JPS589233A (en) * | 1981-07-10 | 1983-01-19 | Toshiba Corp | Optical information recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5990244A (en) | 1984-05-24 |
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