JPH03195038A - Evaluating apparatus for semiconductor integrated circuit - Google Patents
Evaluating apparatus for semiconductor integrated circuitInfo
- Publication number
- JPH03195038A JPH03195038A JP1332838A JP33283889A JPH03195038A JP H03195038 A JPH03195038 A JP H03195038A JP 1332838 A JP1332838 A JP 1332838A JP 33283889 A JP33283889 A JP 33283889A JP H03195038 A JPH03195038 A JP H03195038A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- liquid
- specimen
- sample chamber
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 239000007788 liquid Substances 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000005259 measurement Methods 0.000 claims abstract description 7
- 238000011156 evaluation Methods 0.000 claims description 9
- 238000012360 testing method Methods 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路の評価装置に係り、特に、評
価しようとする半導体集積回路の温度を所定温度に精密
に一致させることを図った評価装置に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an evaluation device for semiconductor integrated circuits, and in particular, to an apparatus for evaluating semiconductor integrated circuits, which is designed to precisely match the temperature of a semiconductor integrated circuit to be evaluated with a predetermined temperature. Regarding an evaluation device.
従来の評価装置は第１図に示すような構成になっていた
。１は恒温槽、２は電源系、３は測定系、４は試験する
半導体集積回路（以下、試料と略記する）、５は試料を
いれる試料室である。５の中は、空気、不活性ガス、水
蒸気等の気体が充填されている。A conventional evaluation device had a configuration as shown in FIG. Reference numeral 1 designates a constant temperature bath, 2 a power supply system, 3 a measurement system, 4 a semiconductor integrated circuit to be tested (hereinafter abbreviated as a sample), and 5 a sample chamber into which a sample is placed. 5 is filled with a gas such as air, inert gas, or water vapor.
近年の集積回路技術の早い進展に合わせるため、評価に
要する時間の短縮化が必須となってきている。そのため
試料に加える電圧・電流が大きくなり、試料の発熱によ
る温度上昇は無視できない位高くなっている０例えば集
積回路チップ上のアルミニウム配線にＩ Ｘ １０’Ａ
／ｃ＋＋”以上の電流を流すと、温度上昇は数十度以上
にも達する。従来装置では、試料室には気体が充填され
ているが、気体は熱容量が小さいため試料の発熱を抑え
ることが出来ない。このような場合、目標とした設定温
度と実際の試料温度は大きく異なる。In order to keep up with the rapid progress of integrated circuit technology in recent years, it has become essential to shorten the time required for evaluation. Therefore, the voltage and current applied to the sample become large, and the temperature rise due to heat generation in the sample becomes too high to ignore.
/c++'' or higher, the temperature rises to more than several tens of degrees.In conventional devices, the sample chamber is filled with gas, but gas has a small heat capacity, so it is difficult to suppress the heat generation of the sample. No. In such a case, the target set temperature and the actual sample temperature are significantly different.
なお、従来技術が記載されている文献として、例えば、
Ｊ 、 Ｃ，Ｂｌａｉｒ、 ａｔ、 ａｌ、、 ”Ｅ
ｌｅｃｔｒｏ−＋ｍｉｇｒａｔｉｏｎ １ｎｄｕｃｅｄ
ｆａｉｌｕｒｅｓ ｉｎ ａｌｕｍｉｎｕｍ ｆｉｌ
＋ａｃｏｎｄｕｃｔｏｒｓ” Ａｐｐｌｉｅｄ Ｐｈｙ
ｓｉｃｓ Ｌｅｔｔｅｒｓ、 ｐａｇｅ２８１ （１９
７０）Ｃジェ・シー・ブレア、他″エレクトロミグレー
ション・インデユースト・フェイリアズ・イン・アルミ
ナム・フィルム・コンダクタズ、アプライド・フイジク
ス・レターズ、２８１頁（１９７０年）〕が挙げられる
。In addition, examples of documents describing the prior art include:
J.C.Blair, at,al,,”E.
electro-+migration 1duced
failures in aluminum fil
+aconductors” Applied Phy
sics Letters, page281 (19
70) C. J. C. Blair, et al., "Electromigration Influences in Aluminum Film Conductors," Applied Physics Letters, p. 281 (1970)].
従来装置では、上述したように、試験時の試料温度を所
定温度に保つことは極めて難しい。他のデバイスとの比
較や従来データとの比較のために、試験時の試料温度は
常に所定温度に保つことが必要である。As described above, with conventional apparatuses, it is extremely difficult to maintain the sample temperature at a predetermined temperature during testing. For comparison with other devices and conventional data, it is necessary to always maintain the sample temperature during testing at a predetermined temperature.
本発明の目的は、試験時の試料の温度上昇を抑え、試料
温度を設定された所定値に精度よく一致させることので
きる評価装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an evaluation device that can suppress the rise in temperature of a sample during testing and accurately match the sample temperature to a predetermined value.
本発明では、上記目的を達成するために、温度を設定さ
れた値に一定に保つ恒温槽と、この恒温槽内に設置され
る試料室と、この試料室内の半導体集積回路にバイアス
信号を与える電源系と、半導体集積回路からの信号を測
定する測定系とからなる半導体集積回路の評価装置にお
いて、上記試料室内に液体を充填する構成とする。In order to achieve the above object, the present invention provides a constant temperature chamber that keeps the temperature constant at a set value, a sample chamber installed in this constant temperature chamber, and a bias signal that applies a bias signal to the semiconductor integrated circuit in this sample chamber. In a semiconductor integrated circuit evaluation apparatus comprising a power supply system and a measurement system for measuring signals from the semiconductor integrated circuit, the sample chamber is filled with a liquid.
また、本発明では、好ましい実施形態として、試料室に
充填する液体を貯めておくタンクと、タンクと試料室と
を結ぶパイプと、タンク内液体を試料室に送り入れ試料
室内液体をタンクに戻し入れる液体の流れをパイプ内に
作りだすポンプと、液体を加熱する加熱体もしくは冷却
する冷却体と、試料室内の温度を検出する温度センサー
と、検出した温度情報をもとに加熱体もしくは冷却体の
能力とポンプの液体送出速度を制御する制御装置とを備
えた構成とする。In addition, in a preferred embodiment of the present invention, a tank for storing liquid to be filled into the sample chamber, a pipe connecting the tank and the sample chamber, and a pipe for supplying the liquid in the tank to the sample chamber and returning the liquid in the sample chamber to the tank are provided. A pump that creates a flow of liquid into the pipe, a heating element that heats the liquid or a cooling element that cools the liquid, a temperature sensor that detects the temperature inside the sample chamber, and a heating element that controls the heating or cooling element based on the detected temperature information. The pump is configured to include a control device that controls the capacity and the liquid delivery speed of the pump.
従来の技術では、試料室内には熱容量の小さな気体が充
填されていたので、試料の試験時の温度上昇を抑えるこ
とができず、試料温度が設定値より高くなるという問題
があった。In the conventional technology, since the sample chamber is filled with a gas having a small heat capacity, it is not possible to suppress the temperature rise during the test of the sample, and there is a problem that the sample temperature becomes higher than the set value.
これに対し、本発明によれば、試料室内に熱容量の大き
な液体を充填したことにより、試料の温度上昇が抑えら
れ、試料温度を設定値に近づけることができる。In contrast, according to the present invention, by filling the sample chamber with a liquid having a large heat capacity, the temperature rise of the sample can be suppressed, and the sample temperature can be brought close to the set value.
さらに、請求項２によれば、試料室の温度を検出し、こ
れを制御装置に取り込み、検出温度と設定温度との差の
大きさに応じて、試料室とタンクとの間を強制循環させ
る液体の冷却能力と流体速度とを制御する構成としたこ
とにより、試料室内液体温度を、つまりは試料温度を、
精密に、しかも急速に、設定温度に一致させることがで
きる。Furthermore, according to claim 2, the temperature of the sample chamber is detected, this is taken into the control device, and forced circulation is performed between the sample chamber and the tank depending on the magnitude of the difference between the detected temperature and the set temperature. By adopting a configuration that controls the cooling capacity and fluid velocity of the liquid, the temperature of the liquid in the sample chamber, or in other words, the sample temperature, can be controlled.
The temperature can be precisely and rapidly matched to the set temperature.
第２図は、本発明の請求項２に対応する実施例構成図で
ある。第２図において、１は恒温槽、２は電源系、３は
測定系、４は試料、５は液体が充填される試料室、６は
液体を貯めるタンク、７はパイプ、８はこのパイプ７を
介してタンク６内液体を試料室５内へ送り入れたり試料
室５内液体をタンク６内へ戻し入れたりする液体の流れ
を作りだすポンプ、９はパイプ７内の液体を加熱する加
熱体もしくは冷却する冷却体、１ｏは試料室５内の液体
の温度を検出する熱電対等の温度センサー１１は検出さ
れた温度情報を取り込み、予め設定されている設定温度
と検出温度との差を求め、この差の大きさに応じて、加
熱（冷却）体９の加熱能力もしくは冷却能力とポンプ８
の液体送出速度を制御する制御装置である。FIG. 2 is a configuration diagram of an embodiment corresponding to claim 2 of the present invention. In Figure 2, 1 is a thermostatic chamber, 2 is a power supply system, 3 is a measurement system, 4 is a sample, 5 is a sample chamber filled with liquid, 6 is a tank for storing liquid, 7 is a pipe, and 8 is this pipe 7 9 is a heating element that heats the liquid in the pipe 7 or A temperature sensor 11 such as a thermocouple that detects the temperature of the liquid in the sample chamber 5 takes in the detected temperature information, calculates the difference between the preset temperature and the detected temperature, and calculates the difference between the preset temperature and the detected temperature. Depending on the size of the difference, the heating capacity or cooling capacity of the heating (cooling) body 9 and the pump 8
This is a control device that controls the liquid delivery speed of the device.
次に動作について説明する。まず、所定の温度に設定さ
れた液体を試料室５に充填する。このとき、タンク６内
およびパイプ７内も同じ温度の液体で満たされている。Next, the operation will be explained. First, the sample chamber 5 is filled with a liquid set at a predetermined temperature. At this time, the inside of the tank 6 and the inside of the pipe 7 are also filled with liquid at the same temperature.
電源系２と測定系３、ならびに制御装置１１を作動させ
る。試料に加える電力が大きく試料発熱による温度上昇
があると、これが温度センサー１０で検出され温度情報
として制御装置１１に送られ、制御袋［１１では、検出
温度と予め内蔵する設定温度との差の大きさを求め、こ
の差の大きさが所定値を越えると直ちに制御指令信号を
出力して、ポンプ８からの液体送出速度を大きくさせる
と同時に加熱（冷却）体９によりパイプ７内を流れる液
体の温度を、設定温度となるよう、冷却させ、このよう
にして、試料温度を所定の設定値に保持する帰還動作が
働く。The power supply system 2, measurement system 3, and control device 11 are activated. When the power applied to the sample is large and the temperature rises due to heat generation of the sample, this is detected by the temperature sensor 10 and sent as temperature information to the control device 11. As soon as the magnitude of the difference exceeds a predetermined value, a control command signal is output to increase the liquid delivery speed from the pump 8, and at the same time, the liquid flowing through the pipe 7 by the heating (cooling) body 9 is increased. The sample temperature is cooled down to the set temperature, and in this way, a feedback operation is performed to maintain the sample temperature at the predetermined set value.
使用する液体としては、例えばフロリナート（熱容量０
．４６）、シリコーンオイル（熱容量０．３９）、純水
（熱容量１．０）（熱容量の単位はカロリー／１ｏ３・
℃〕が挙げられる。これに対し、従来技術で充填されて
いた気体の熱容量は、これらの値の１万分の１以下であ
る。このように、液体の熱容量は大きいので、従来の気
体による温度制御よりも温度変化は小さく、かつ短時間
で制御できる。The liquid used is, for example, Fluorinert (heat capacity 0
．． 46), silicone oil (heat capacity 0.39), pure water (heat capacity 1.0) (unit of heat capacity is calorie/1o3.
°C]. In contrast, the heat capacity of the gas filled in the prior art is less than 1/10,000 of these values. As described above, since the heat capacity of the liquid is large, the temperature change is smaller and can be controlled in a shorter time than in conventional temperature control using gas.
以上説明したように、本発明によれば、液体を用いるこ
とにより、試料の温度上昇を抑え、試料温度が正確に制
御できるようになり、信頼性試験の短縮化、高精度化に
効果がある。As explained above, according to the present invention, by using a liquid, the temperature rise of the sample can be suppressed and the sample temperature can be accurately controlled, which is effective in shortening the reliability test and increasing accuracy. .
第１図は従来技術及び本発明における評価装置の構成図
で従来技術では試料室内に気体が、本発明では液体が充
填される。第２図は本発明の実施例構成図である。
〔符号の説明〕
１・・・恒温槽 ２・・・電源系３・・・測
定系 ４・・・試料５・・・試料室
６・・・タンク７・・・パイプ ８・・
・ポンプ９・・・加熱（冷却）体 １０・・・温度セ
ンサー１１・・・制御装置FIG. 1 is a configuration diagram of an evaluation apparatus according to the prior art and the present invention. In the prior art, the sample chamber is filled with gas, and in the present invention, it is filled with liquid. FIG. 2 is a configuration diagram of an embodiment of the present invention. [Explanation of symbols] 1... Constant temperature chamber 2... Power supply system 3... Measurement system 4... Sample 5... Sample chamber
6...Tank 7...Pipe 8...
・Pump 9... Heating (cooling) body 10... Temperature sensor 11... Control device
Claims (1)
温槽内に設置される試料室と、この試料室内の半導体集
積回路にバイアス信号を与える電源系と、半導体集積回
路からの信号を測定する測定系とからなる半導体集積回
路の評価装置において、上記試料室内に液体を充填する
ことを特徴とする半導体集積回路の評価装置。 ２、請求項１記載の装置において、試料室に充填する液
体を貯めておくタンクと、タンクと試料室とを結ぶパイ
プと、タンク内液体を試料室に送り入れ試料室内液体を
タンクに戻し入れる液体の流れをパイプ内に作りだすポ
ンプと、液体を加熱する加熱体もしくは冷却する冷却体
と、試料室内の温度を検出する温度センサーと、検出し
た温度情報をもとに加熱体もしくは冷却体の能力とポン
プの液体送出速度を制御する制御装置とを備えたことを
特徴とする半導体集積回路の評価装置。[Scope of Claims] 1. A constant temperature chamber that keeps the temperature constant at a set value, a sample chamber installed within the constant temperature chamber, and a power supply system that applies a bias signal to a semiconductor integrated circuit within the sample chamber; A semiconductor integrated circuit evaluation device comprising a measurement system for measuring signals from a semiconductor integrated circuit, characterized in that the sample chamber is filled with a liquid. 2. In the apparatus according to claim 1, there is provided a tank for storing liquid to be filled into the sample chamber, a pipe connecting the tank and the sample chamber, and a pipe for supplying the liquid in the tank to the sample chamber and returning the liquid in the sample chamber to the tank. A pump that creates a flow of liquid inside the pipe, a heating element that heats the liquid or a cooling element that cools the liquid, a temperature sensor that detects the temperature inside the sample chamber, and a temperature sensor that detects the temperature of the heating element or cooling element based on the detected temperature information. 1. A semiconductor integrated circuit evaluation device comprising: and a control device for controlling a liquid delivery speed of a pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1332838A JPH03195038A (en) | 1989-12-25 | 1989-12-25 | Evaluating apparatus for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1332838A JPH03195038A (en) | 1989-12-25 | 1989-12-25 | Evaluating apparatus for semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03195038A true JPH03195038A (en) | 1991-08-26 |
Family
ID=18259362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1332838A Pending JPH03195038A (en) | 1989-12-25 | 1989-12-25 | Evaluating apparatus for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03195038A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012141021A1 (en) * | 2011-04-12 | 2012-10-18 | 株式会社ソニー・コンピュータエンタテインメント | Operation testing device for electronic device, operation testing method, and method for producing electronic device |
| JP2013506819A (en) * | 2009-10-02 | 2013-02-28 | イーアールエス エレクトロニック ゲーエムベーハー | Semiconductor chip adjusting apparatus and inspection method using the apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62248232A (en) * | 1986-04-22 | 1987-10-29 | Nec Corp | Inspection device for semiconductor wafer |
| JPS63249065A (en) * | 1987-04-06 | 1988-10-17 | Hitachi Ltd | Hydraulic type heat shock testing apparatus |
| JPS6357587B2 (en) * | 1979-08-29 | 1988-11-11 | Tokyo Shibaura Electric Co |
-
1989
- 1989-12-25 JP JP1332838A patent/JPH03195038A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6357587B2 (en) * | 1979-08-29 | 1988-11-11 | Tokyo Shibaura Electric Co | |
| JPS62248232A (en) * | 1986-04-22 | 1987-10-29 | Nec Corp | Inspection device for semiconductor wafer |
| JPS63249065A (en) * | 1987-04-06 | 1988-10-17 | Hitachi Ltd | Hydraulic type heat shock testing apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013506819A (en) * | 2009-10-02 | 2013-02-28 | イーアールエス エレクトロニック ゲーエムベーハー | Semiconductor chip adjusting apparatus and inspection method using the apparatus |
| US9599662B2 (en) | 2009-10-02 | 2017-03-21 | Ers Electronic Gmbh | Apparatus for conditioning semiconductor chips and test method using the apparatus |
| WO2012141021A1 (en) * | 2011-04-12 | 2012-10-18 | 株式会社ソニー・コンピュータエンタテインメント | Operation testing device for electronic device, operation testing method, and method for producing electronic device |
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