JPH0319261A - Lead frame for semiconductor - Google Patents

Lead frame for semiconductor

Info

Publication number
JPH0319261A
JPH0319261A JP1153445A JP15344589A JPH0319261A JP H0319261 A JPH0319261 A JP H0319261A JP 1153445 A JP1153445 A JP 1153445A JP 15344589 A JP15344589 A JP 15344589A JP H0319261 A JPH0319261 A JP H0319261A
Authority
JP
Japan
Prior art keywords
semiconductor
mesh
stress
metal
mesh structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1153445A
Other languages
Japanese (ja)
Inventor
Masayuki Hirota
弘田 正幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1153445A priority Critical patent/JPH0319261A/en
Publication of JPH0319261A publication Critical patent/JPH0319261A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features

Landscapes

  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the exfoliation of a semiconductor circuit pellet by constituting a semiconductor seating part of a honeycomb type metal mesh, and increasing the fixing strength. CONSTITUTION:A semiconductor seating part 1 has a retaining lead wire 5, and is constituted in a regular hexagon mesh structure whose periphery is surrounded by uniform width metal. This mesh structure reduces thermal stress generated by heat, and increases the fixing strength. When the seating part 1 is made of a mesh, metal part is little, so that stress caused by thermal expansion is small and the generated stress is reduced by the deformation of the mesh part. When a honeycomb type metal mesh, i.e., a regular hexagon mesh structure is used, resistance to thermal stress is increased, and cracks and exfoliation of an integrated circuit pellet 7 can be prevented.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は集積回路の組み立てに用いる半導体用リートフ
レームに関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor reel frame used in the assembly of integrated circuits.

従来の技術 従来、上記リードフレームは第3図に示すように半導体
敷置部1が穴のない長方形筐たは正方形の金属プレート
でできて釦9、これが結合部4に半導体敷置部1の支持
用リード線6で接続されていた。
2. Prior Art Conventionally, as shown in FIG. 3, in the above-mentioned lead frame, the semiconductor mounting portion 1 is made of a rectangular housing without holes or a square metal plate, and the button 9 is connected to the connecting portion 4 of the semiconductor mounting portion 1. It was connected with a support lead wire 6.

発明が解決しようとする課題 従来のフレームによれば、集積回路ペレット6を半導体
敷置部1に固着して樹脂対じを行ない外部リード部3を
加工した後の完戊品に、熱によるストレスを加えると、
半導体敷置部1と封じ樹脂の熱膨張率の違いによって集
積回路ペレット6にクラックが入ったシ、集積回路ペレ
ット6が半導体敷置部1より剥離する、といった問題が
あった。
Problems to be Solved by the Invention According to the conventional frame, after the integrated circuit pellet 6 is fixed to the semiconductor placing part 1, the resin is bonded, and the external lead part 3 is processed, the finished product is subjected to stress due to heat. If you add
There were problems such as the integrated circuit pellet 6 cracking due to the difference in thermal expansion coefficient between the semiconductor placing part 1 and the sealing resin, and the integrated circuit pellet 6 peeling off from the semiconductor placing part 1.

これは、第2図において半導体敷置部1の集積回路ペレ
ット6よシはみ出した部分のみが外部の封じ樹脂によっ
て固定された状態で、封じ樹脂より大きな熱膨張率をも
つ半導体敷置部1が熱膨張を行なうと半導体敷置部1の
中心部に応力が発生し半導体敷置部1が第4図に示すよ
うに反ってし1うためである。このとき、集積回路ベレ
ット6を固着している接着剤の固着力が強ければ集積回
路ペレット6にはクラックが入シ、固着力が弱ければ集
積回路ペレット6が半導体敷置部1よシ剥離することに
なる。
In FIG. 2, only the protruding portion of the integrated circuit pellet 6 of the semiconductor placing part 1 is fixed by the external sealing resin, and the semiconductor placing part 1 has a larger coefficient of thermal expansion than the sealing resin. This is because thermal expansion generates stress in the center of the semiconductor placement part 1, causing the semiconductor placement part 1 to warp as shown in FIG. At this time, if the adhesive force fixing the integrated circuit pellet 6 is strong, cracks will appear in the integrated circuit pellet 6, and if the adhesive force is weak, the integrated circuit pellet 6 will peel off from the semiconductor placement part 1. It turns out.

課題を解決するための手段 この問題点を解決するために本発明は、半導体敷置部1
にメッシュ(網目)状の金属を使用しメッシュの構造を
正六角形(ノ1二カム状)としている。
Means for Solving the Problems In order to solve this problem, the present invention provides a semiconductor placement section 1.
A mesh-shaped metal is used for the mesh, and the mesh structure is a regular hexagon (no. 12 cam shape).

作用 半導体敷置部1をメッシュにすると、上記のように熱的
なストレスが掛かった場合でも、金属部が従来のものよ
う少ないので熱膨張による応力は小さくてすむし、また
、発生した応力もメッシュの1部が変形することによっ
て削減されてしまう。
If the working semiconductor placement part 1 is made of a mesh, even if thermal stress is applied as described above, there are fewer metal parts than in the conventional case, so the stress due to thermal expansion will be small, and the generated stress will also be reduced. It is reduced by deforming a part of the mesh.

そして、メッシュの構造を正六角形とすることで、面全
体を単一角度の線構造という比較的単純なものとして構
成して、他のメッVs構造をとった時よりも、使用金属
の面積を小さくしながら構造的にも強くすることを可能
としている。
By making the mesh structure a regular hexagon, the entire surface is constructed as a relatively simple line structure with a single angle, and the area of the metal used is reduced compared to when using other mesh Vs structures. This makes it possible to make it structurally stronger while being smaller.

実施例 第1図は本発明の一実施例による半導体用リードフレー
ムのパターン図である。第1図において、内部リード2
.外部リード3.結合部4,半導体敷置部1の支持用リ
ード線5は従来のものとかなしである。半導体敷置部1
は第2図に示すように周囲を均一の幅の金属とし、内部
も均一幅の金属による正六角形のメッシュ構造となって
いる。このメッシュ構造が熱によって発生する熱的な応
力を小さくする緩衝構造の役目をする。
Embodiment FIG. 1 is a pattern diagram of a semiconductor lead frame according to an embodiment of the present invention. In Figure 1, internal lead 2
.. External lead 3. The connecting portion 4 and the supporting lead wire 5 of the semiconductor placing portion 1 are conventional ones or none. Semiconductor laying part 1
As shown in FIG. 2, the periphery is made of metal with a uniform width, and the inside has a regular hexagonal mesh structure made of metal with a uniform width. This mesh structure serves as a buffer structure that reduces thermal stress generated by heat.

発明の効果 以上のように本発明によれば、樹脂封じの半導体製品に
熱によるストレスを掛けた場合に発生する集積回路ペレ
ットのクラックや剥離を防ぐことができるという効果が
得られる。
Effects of the Invention As described above, according to the present invention, it is possible to prevent cracking and peeling of integrated circuit pellets that occur when thermal stress is applied to a resin-sealed semiconductor product.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例による半導体用リードフレー
ムを示す平面図、第2図は本発明の半導体敷置部の拡大
図、第3図は従来の半導体用リードフレームを示す平面
図、第4図は熱による半導体敷置部の変形を示す図であ
る。 1・・・・・・半導体敷置部,2・・・・・・内部リー
ド部、3・・・・・・外部リード部、4・・・・・・結
合部、6・・・・・・半導体敷置部の支持用リード線、
6・・・・・・集積回路ペレット、7・・・・・・金属
メッシュ、8・・・・・・接着剤、9・・・・・・応力
によるたわみ。 第2図 l 図
FIG. 1 is a plan view showing a semiconductor lead frame according to an embodiment of the present invention, FIG. 2 is an enlarged view of a semiconductor placement part of the present invention, and FIG. 3 is a plan view showing a conventional semiconductor lead frame. FIG. 4 is a diagram showing deformation of the semiconductor placement part due to heat. DESCRIPTION OF SYMBOLS 1... Semiconductor laying part, 2... Internal lead part, 3... External lead part, 4... Connection part, 6...・Lead wire for supporting the semiconductor laying part,
6... Integrated circuit pellet, 7... Metal mesh, 8... Adhesive, 9... Deflection due to stress. Figure 2 l Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体敷置部、内部リード部および外部リード部を有す
る半導体用リードフレームに於いて、前記半導体敷置部
がハニカム状の金属メッシュ(正六角形のメッシュ構造
の金属)により構成されることを特徴とする半導体用リ
ードフレーム。
A semiconductor lead frame having a semiconductor placing part, an internal lead part, and an external lead part, characterized in that the semiconductor placing part is constituted by a honeycomb-shaped metal mesh (a metal having a regular hexagonal mesh structure). Lead frames for semiconductors.
JP1153445A 1989-06-15 1989-06-15 Lead frame for semiconductor Pending JPH0319261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1153445A JPH0319261A (en) 1989-06-15 1989-06-15 Lead frame for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1153445A JPH0319261A (en) 1989-06-15 1989-06-15 Lead frame for semiconductor

Publications (1)

Publication Number Publication Date
JPH0319261A true JPH0319261A (en) 1991-01-28

Family

ID=15562705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1153445A Pending JPH0319261A (en) 1989-06-15 1989-06-15 Lead frame for semiconductor

Country Status (1)

Country Link
JP (1) JPH0319261A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0655782A3 (en) * 1993-11-29 1995-10-18 Toshiba Kk Resin-sealed semiconductor device and method of fabricating same.
DE10139681A1 (en) * 2001-08-11 2003-03-06 Infineon Technologies Ag Electronic component used in MOSFETs comprises a plate-like support element having a contact zone and a semiconductor body applied on the contact zone of the support element
WO2006131776A1 (en) * 2005-06-10 2006-12-14 Infineon Technologies Ag Leadframe, semiconductor package and methods of producing the same
JP2009032906A (en) * 2007-07-27 2009-02-12 Seiko Instruments Inc Semiconductor device package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0655782A3 (en) * 1993-11-29 1995-10-18 Toshiba Kk Resin-sealed semiconductor device and method of fabricating same.
DE10139681A1 (en) * 2001-08-11 2003-03-06 Infineon Technologies Ag Electronic component used in MOSFETs comprises a plate-like support element having a contact zone and a semiconductor body applied on the contact zone of the support element
WO2006131776A1 (en) * 2005-06-10 2006-12-14 Infineon Technologies Ag Leadframe, semiconductor package and methods of producing the same
JP2009032906A (en) * 2007-07-27 2009-02-12 Seiko Instruments Inc Semiconductor device package

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