JPH03191450A - Defective chip substituting circuit for memory card - Google Patents
Defective chip substituting circuit for memory cardInfo
- Publication number
- JPH03191450A JPH03191450A JP1334313A JP33431389A JPH03191450A JP H03191450 A JPH03191450 A JP H03191450A JP 1334313 A JP1334313 A JP 1334313A JP 33431389 A JP33431389 A JP 33431389A JP H03191450 A JPH03191450 A JP H03191450A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- memory
- defective
- memory card
- defective chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002950 deficient Effects 0.000 title claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- 238000006467 substitution reaction Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はメモリーカードの不良チップの代替え回路に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a replacement circuit for a defective chip in a memory card.
従来のメモリーカードは、内部に複数個のメモリーチッ
プを持つ場合、メモリーカードに割り当てられたアドレ
ス空間に対し必要な数のチップだけを持っている。If a conventional memory card has multiple memory chips inside, it has only the number of chips necessary for the address space allocated to the memory card.
上述した従来のメモリーカードは、カード内部に1つで
も不良のメモリーチップがあると、少くともその不良チ
ップのアドレス領域は使用不可能であり、多くの場合そ
のカードは使用不可能になるという欠点がある。The disadvantage of the conventional memory cards mentioned above is that if there is even one defective memory chip inside the card, at least the address area of that defective chip becomes unusable, and in many cases the card becomes unusable. There is.
本発明の回路は、少くとも1個の予備用を含む複数のメ
モリーチップと、各該メモリーチップのうち使用不可の
ものを示すデータを書き込むためのメモリー手段と、該
メモリー手段の書き込み内容および外部から与えられる
アドレス指定用データに応答して前記メモリーチップの
代替え選択対象を示すデータを発生するデコード変換手
段とを備えている。The circuit of the present invention includes a plurality of memory chips including at least one spare memory chip, a memory means for writing data indicating which of the memory chips is unusable, and a write content of the memory means and an external memory chip. and decoding conversion means for generating data indicating an alternative selection target of the memory chip in response to addressing data given from the memory chip.
本発明について図面を参照して説明する。 The present invention will be explained with reference to the drawings.
第1図は本発明の一実施例のブロック図である。同図に
おいて、5個のメモリーチップ5〜9の中の4個のチッ
プのみが使用され、もしその中に1個不良チップが存在
した場合には残りの1個を不良チップの代替えとして使
用する。アドレスバス11の上位2ビツト(Ao、A+
)はメモリーチップのセレクト信号として使用され、デ
コーダ1によって4本のチップセレクト信号(B3〜B
o )にデコードされる。このデコード信号は、変換器
2に送られ、どのメモリーチップを代替えするかを示す
代替チップセレクト信号(C4〜Co )を、EEPR
OM(を気的消去可能な読み出専用メモリー)3の内容
により決定する。FIG. 1 is a block diagram of one embodiment of the present invention. In the figure, only four out of five memory chips 5 to 9 are used, and if one of them is defective, the remaining one is used as a replacement for the defective chip. . The upper 2 bits of address bus 11 (Ao, A+
) are used as memory chip select signals, and decoder 1 selects four chip select signals (B3 to B
o) is decoded. This decoded signal is sent to the converter 2, and a replacement chip select signal (C4 to Co) indicating which memory chip is to be replaced is sent to the EEPR.
It is determined by the contents of the OM (a mechanically erasable read-only memory) 3.
まず、デコーダ1の入出力真理値表を第1表に制御信号
線12を通して与えられるイネーブル信号(EN)の論
理値が°“1″の場合には、デコーダlの動作がイネー
ブルされ、EEPROM3の書き込みディスエーブルさ
れる。イネーブル信号(EN)の論理値が“0′°のと
き、デコーダ1はディスエーブルされ、EEPROM3
がイネーブルされ、これにデータバス10を通して不良
チップ(1個)へのアクセスを禁止し代替えチップを指
示するための3ビツトデータ(nz〜no)を与える。First, the input/output truth table of the decoder 1 is shown in Table 1. When the logic value of the enable signal (EN) applied through the control signal line 12 is "1", the operation of the decoder 1 is enabled, and the operation of the EEPROM 3 is Write disabled. When the logic value of the enable signal (EN) is “0′°, decoder 1 is disabled and EEPROM 3
is enabled and given 3-bit data (nz to no) through the data bus 10 to prohibit access to the defective chip (one) and to designate a replacement chip.
変換器2の入出力の関係は第2表に示す通りであり、E
EPROM3から読み出した3ビツトデータ(n2 +
nt + no )によりどのメモリーチップを代替
えするかを決定できる。The input/output relationship of converter 2 is as shown in Table 2, and E
3-bit data read from EPROM3 (n2 +
nt + no) can determine which memory chip to replace.
第2表
例えば、メモリーチップ5が不良になった場合には、E
EPROM3に(001)を書き込めば、メモリーチッ
プら以外の4個を使用できる。Table 2 For example, if memory chip 5 becomes defective, E
If (001) is written in EPROM3, four chips other than the memory chips can be used.
以上説明したように本発明は、メモリーカード内部に予
備のメモリーチップを持たせ、不良チップが存在したと
きにはその代替をさせることによりメモリーカードの不
良率を低減できる効果がある。As described above, the present invention has the effect of reducing the failure rate of memory cards by providing a spare memory chip inside the memory card and replacing defective chips when they are present.
第1図は本発明の一実施例のブロック図である。
1・・・デコーダ、2・・・変換器、3・・・EEPR
OM、4・・・インバータ、5〜9・・・メモリーチッ
プ、10・・・データバス、11・・・アドレスバス、
12・・・制御信号線。FIG. 1 is a block diagram of one embodiment of the present invention. 1...Decoder, 2...Converter, 3...EEPR
OM, 4... Inverter, 5-9... Memory chip, 10... Data bus, 11... Address bus,
12...Control signal line.
Claims (1)
各該メモリーチップのうち使用不可のものを示すデータ
を書き込むためのメモリー手段と、該メモリー手段の書
き込み内容および外部から与えられるアドレス指定用デ
ータに応答して前記メモリーチップの代替え選択対象を
示すデータを発生するデコード変換手段とを備えている
ことを特徴としたメモリーカードの不良チップ代替え回
路。a plurality of memory chips including at least one spare;
A memory means for writing data indicating which of the memory chips is unusable, and data indicating an alternative selection target of the memory chip in response to the contents written in the memory means and addressing data given from the outside. A defective chip replacement circuit for a memory card, characterized in that it is equipped with a decoding conversion means that generates a defective chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1334313A JPH03191450A (en) | 1989-12-21 | 1989-12-21 | Defective chip substituting circuit for memory card |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1334313A JPH03191450A (en) | 1989-12-21 | 1989-12-21 | Defective chip substituting circuit for memory card |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03191450A true JPH03191450A (en) | 1991-08-21 |
Family
ID=18275957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1334313A Pending JPH03191450A (en) | 1989-12-21 | 1989-12-21 | Defective chip substituting circuit for memory card |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03191450A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315552A (en) * | 1991-08-29 | 1994-05-24 | Kawasaki Steel Corporation | Memory module, method for control thereof and method for setting fault bit table for use therewith |
WO1994024624A1 (en) * | 1993-04-16 | 1994-10-27 | Sony Corporation | Information recording apparatus and information transfer apparatus |
US7197613B2 (en) | 2003-01-28 | 2007-03-27 | Renesas Technology Corp. | Nonvolatile memory |
-
1989
- 1989-12-21 JP JP1334313A patent/JPH03191450A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315552A (en) * | 1991-08-29 | 1994-05-24 | Kawasaki Steel Corporation | Memory module, method for control thereof and method for setting fault bit table for use therewith |
WO1994024624A1 (en) * | 1993-04-16 | 1994-10-27 | Sony Corporation | Information recording apparatus and information transfer apparatus |
US7197613B2 (en) | 2003-01-28 | 2007-03-27 | Renesas Technology Corp. | Nonvolatile memory |
US7290097B2 (en) | 2003-01-28 | 2007-10-30 | Renesas Technology Corp. | Nonvolatile memory |
CN100380529C (en) * | 2003-01-28 | 2008-04-09 | 株式会社瑞萨科技 | Nonvolatile memory |
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