JPH0318993B2 - - Google Patents

Info

Publication number
JPH0318993B2
JPH0318993B2 JP58203514A JP20351483A JPH0318993B2 JP H0318993 B2 JPH0318993 B2 JP H0318993B2 JP 58203514 A JP58203514 A JP 58203514A JP 20351483 A JP20351483 A JP 20351483A JP H0318993 B2 JPH0318993 B2 JP H0318993B2
Authority
JP
Japan
Prior art keywords
laser beam
laser
processing
position confirmation
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58203514A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6096391A (ja
Inventor
Yasuo Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP58203514A priority Critical patent/JPS6096391A/ja
Publication of JPS6096391A publication Critical patent/JPS6096391A/ja
Publication of JPH0318993B2 publication Critical patent/JPH0318993B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
JP58203514A 1983-10-28 1983-10-28 レ−ザ加工機 Granted JPS6096391A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203514A JPS6096391A (ja) 1983-10-28 1983-10-28 レ−ザ加工機

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203514A JPS6096391A (ja) 1983-10-28 1983-10-28 レ−ザ加工機

Publications (2)

Publication Number Publication Date
JPS6096391A JPS6096391A (ja) 1985-05-29
JPH0318993B2 true JPH0318993B2 (enrdf_load_html_response) 1991-03-13

Family

ID=16475409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203514A Granted JPS6096391A (ja) 1983-10-28 1983-10-28 レ−ザ加工機

Country Status (1)

Country Link
JP (1) JPS6096391A (enrdf_load_html_response)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391893A (en) 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
JPS59115574A (ja) 1982-12-23 1984-07-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
DE241722T1 (de) * 1986-03-17 1988-02-25 Cincinnati Milacron Inc., Cincinnati, Ohio Schaltgeraet fuer laserbuendel.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754291Y2 (enrdf_load_html_response) * 1977-05-09 1982-11-24
JPS57154389A (en) * 1981-03-19 1982-09-24 Toshiba Corp Laser working device

Also Published As

Publication number Publication date
JPS6096391A (ja) 1985-05-29

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