JPH0318389B2 - - Google Patents

Info

Publication number
JPH0318389B2
JPH0318389B2 JP56186354A JP18635481A JPH0318389B2 JP H0318389 B2 JPH0318389 B2 JP H0318389B2 JP 56186354 A JP56186354 A JP 56186354A JP 18635481 A JP18635481 A JP 18635481A JP H0318389 B2 JPH0318389 B2 JP H0318389B2
Authority
JP
Japan
Prior art keywords
charge
region
shift register
vertical shift
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56186354A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5888976A (ja
Inventor
Eiichi Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56186354A priority Critical patent/JPS5888976A/ja
Publication of JPS5888976A publication Critical patent/JPS5888976A/ja
Publication of JPH0318389B2 publication Critical patent/JPH0318389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56186354A 1981-11-20 1981-11-20 電荷転送撮像装置 Granted JPS5888976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56186354A JPS5888976A (ja) 1981-11-20 1981-11-20 電荷転送撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56186354A JPS5888976A (ja) 1981-11-20 1981-11-20 電荷転送撮像装置

Publications (2)

Publication Number Publication Date
JPS5888976A JPS5888976A (ja) 1983-05-27
JPH0318389B2 true JPH0318389B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=16186890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56186354A Granted JPS5888976A (ja) 1981-11-20 1981-11-20 電荷転送撮像装置

Country Status (1)

Country Link
JP (1) JPS5888976A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613575A (ja) * 1984-06-18 1986-01-09 Victor Co Of Japan Ltd 固体撮像装置
US5488239A (en) * 1994-07-14 1996-01-30 Goldstar Electron Co., Ltd. Solid state image sensor with shaped photodiodes
US5793071A (en) * 1996-09-27 1998-08-11 Kabushiki Kaisha Toshiba Solid-State imaging device
US6037643A (en) * 1998-02-17 2000-03-14 Hewlett-Packard Company Photocell layout for high-speed optical navigation microchips

Also Published As

Publication number Publication date
JPS5888976A (ja) 1983-05-27

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