JPH0318340B2 - - Google Patents

Info

Publication number
JPH0318340B2
JPH0318340B2 JP62293041A JP29304187A JPH0318340B2 JP H0318340 B2 JPH0318340 B2 JP H0318340B2 JP 62293041 A JP62293041 A JP 62293041A JP 29304187 A JP29304187 A JP 29304187A JP H0318340 B2 JPH0318340 B2 JP H0318340B2
Authority
JP
Japan
Prior art keywords
semiconductor crystal
harmonic
amount
ion implantation
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62293041A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63151042A (ja
Inventor
Roorensu Bomubatsuku Jon
Bikutaa Jeemusu Jon
Chendeingu Wangu Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ford Motor Co
Original Assignee
Ford Motor Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ford Motor Co filed Critical Ford Motor Co
Publication of JPS63151042A publication Critical patent/JPS63151042A/ja
Publication of JPH0318340B2 publication Critical patent/JPH0318340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/20—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/636—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Radiation (AREA)
JP62293041A 1986-12-02 1987-11-19 半導体結晶におけるイオン注入量測定方法 Granted JPS63151042A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US937158 1986-12-02
US06/937,158 US4755049A (en) 1986-12-02 1986-12-02 Method and apparatus for measuring the ion implant dosage in a semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS63151042A JPS63151042A (ja) 1988-06-23
JPH0318340B2 true JPH0318340B2 (show.php) 1991-03-12

Family

ID=25469577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62293041A Granted JPS63151042A (ja) 1986-12-02 1987-11-19 半導体結晶におけるイオン注入量測定方法

Country Status (4)

Country Link
US (1) US4755049A (show.php)
JP (1) JPS63151042A (show.php)
KR (1) KR880008417A (show.php)
CA (1) CA1262291A (show.php)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074669A (en) * 1989-12-12 1991-12-24 Therma-Wave, Inc. Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5185273A (en) * 1991-09-30 1993-02-09 Motorola, Inc. Method for measuring ions implanted into a semiconductor substrate
TW394977B (en) * 1998-04-21 2000-06-21 United Microelectronics Corp A recycle method for the monitor control chip
US7029933B2 (en) * 2004-06-22 2006-04-18 Tech Semiconductor Singapore Pte. Ltd. Method for monitoring ion implant doses
US7250313B2 (en) * 2004-09-30 2007-07-31 Solid State Measurements, Inc. Method of detecting un-annealed ion implants
KR100699889B1 (ko) * 2005-12-29 2007-03-28 삼성전자주식회사 가변적인 이온주입 조건이 수반되는 반도체 소자의 제조방법
US8415620B2 (en) * 2010-01-11 2013-04-09 International Business Machines Corporation Determining doping type and level in semiconducting nanostructures
US8581204B2 (en) 2011-09-16 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for monitoring ion implantation
US10019565B2 (en) 2015-12-17 2018-07-10 Honeywell Federal Manufacturing & Technologies, Llc Method of authenticating integrated circuits using optical characteristics of physically unclonable functions
US11041827B2 (en) * 2019-04-12 2021-06-22 International Business Machines Corporation Carrier-resolved photo-hall system and method

Also Published As

Publication number Publication date
CA1262291A (en) 1989-10-10
KR880008417A (ko) 1988-08-31
JPS63151042A (ja) 1988-06-23
US4755049A (en) 1988-07-05

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