JPH03178105A - Thin garnet film for magneto-optical recording medium - Google Patents
Thin garnet film for magneto-optical recording mediumInfo
- Publication number
- JPH03178105A JPH03178105A JP31676289A JP31676289A JPH03178105A JP H03178105 A JPH03178105 A JP H03178105A JP 31676289 A JP31676289 A JP 31676289A JP 31676289 A JP31676289 A JP 31676289A JP H03178105 A JPH03178105 A JP H03178105A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- recording medium
- coercive force
- thin film
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 32
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- 230000005291 magnetic effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 229910052742 iron Inorganic materials 0.000 description 10
- 239000000654 additive Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009828 non-uniform distribution Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はガーネット多結晶薄膜の粒界由来雑音を低減し
光磁気記録媒体としての性能を向上させた光磁気記録媒
体用ガーネット薄膜に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a garnet thin film for a magneto-optical recording medium that reduces noise originating from grain boundaries in a garnet polycrystalline thin film and improves performance as a magneto-optical recording medium.
(従来の技術)
書換え可能な光メモリーとして光磁気記録は高密度、高
信頼性を実現する最も有力な技術として注目されている
。すでに媒体としてはアモルファス希土類−遷移金属が
実現されているが、この材料は酸化され易い希土類を含
むため媒体自身の耐蝕性が低く、また記録再生時に用い
る磁気光学効果が小さいという欠点を持つ。高耐蝕性を
示し短波長での磁気光学効果の大きいガーネット材料ば
、このようなアモルファス希土類−遷移金属の欠点を克
服し得る次世代光磁気媒体として最も有望視されている
。しかしながら、スパッタ法によってガラス基板上に形
成された薄膜は多結晶からなり、結晶粒界に由来する光
学的不均一(屈折率の不均一分布)および磁気的不均一
(保磁力の不均一分布)のため媒体雑音が大きいという
欠点がある。(Prior Art) Magneto-optical recording is attracting attention as the most promising technology for achieving high density and high reliability in rewritable optical memory. Amorphous rare earth-transition metals have already been realized as media, but this material contains rare earths that are easily oxidized, so the medium itself has low corrosion resistance, and has the disadvantages that the magneto-optic effect used during recording and reproduction is small. Garnet materials, which exhibit high corrosion resistance and a large magneto-optic effect at short wavelengths, are considered the most promising as next-generation magneto-optical media that can overcome the drawbacks of amorphous rare earth-transition metals. However, thin films formed on glass substrates by sputtering are polycrystalline, resulting in optical non-uniformity (non-uniform distribution of refractive index) and magnetic non-uniformity (non-uniform distribution of coercive force) originating from crystal grain boundaries. Therefore, the disadvantage is that the medium noise is large.
最近、五味らはDy系ガーネットにWを添加することで
結晶粒内部の保磁力を上げ、その分布の均一化と膜質の
向上に成功した(Gomt et al:J、Appl
。Recently, Gomi et al. added W to Dy-based garnet to increase the coercive force inside the crystal grains, and succeeded in making the distribution uniform and improving the film quality (Gomt et al: J, Appl.
.
Phys、+ 63 (8)、 3642 (1988
)) 、また伊藤らはBを添加することに依って結晶粒
を微細化し光学的均一性を向上させた(伊藤ら:第12
回日本応用磁気学会学術講演会概要集、127(198
8))。しかしながら、添加元素に依って結晶粒径ia
m以下の微細化と十分な保磁力向上を同時に実現した報
告は殆どない。Phys, + 63 (8), 3642 (1988
)), Ito et al. refined the crystal grains and improved optical uniformity by adding B (Ito et al.: 12th
Abstracts of the Annual Conference of the Japanese Society of Applied Magnetics, 127 (198
8)). However, depending on the added element, the crystal grain size ia
There are almost no reports that have simultaneously achieved microfabrication of less than m and a sufficient improvement in coercive force.
(発明が解決しようとする課題)
本発明は、結晶粒の微細化と高保磁力付与を添加元素に
より同時に実現することで上記の多結晶ガーネット薄膜
の欠点を克服し、高性能光磁気記録媒体を提供すること
を目的とする。(Problems to be Solved by the Invention) The present invention overcomes the above-mentioned drawbacks of polycrystalline garnet thin films by simultaneously achieving finer crystal grains and imparting high coercive force using additive elements, thereby creating a high-performance magneto-optical recording medium. The purpose is to provide.
(課題を解決するための手段)
本発明は、基本組成がBixRff−xMyFes−y
o+z(ここでRはYを含む希土類元素、MはGa、A
Zを表す)で1.5≦x≦3.0、O≦y≦2.0を満
たすガーネット薄膜に、酸素を除いた残余の元素の原子
量比で2.0at%以上5.Oat%以下Cuを添加し
、結晶粒径が1−以下でファラデーループより見積った
保磁力が1 kOe以上であることを特徴とする光磁気
記録媒体用ガーネット薄膜を要旨とするものである。(Means for Solving the Problems) The present invention has a basic composition of BixRff-xMyFes-y.
o+z (here, R is a rare earth element including Y, M is Ga, A
The garnet thin film that satisfies 1.5≦x≦3.0 and O≦y≦2.0 (representing Z) has an atomic weight ratio of 2.0 at% or more of the remaining elements excluding oxygen5. The gist of the present invention is to provide a garnet thin film for a magneto-optical recording medium, which is characterized in that Cu is added in Oat% or less, the crystal grain size is 1- or less, and the coercive force estimated by a Faraday loop is 1 kOe or more.
(作 用)
本発明者らはガーネット組成の非晶質中に添加されたC
uが結晶核の生成を促進すること、および結晶化後ピン
ニングサイトとして磁壁移動を妨げることにより結晶粒
の微細化と保磁力増大の両方を同時に実現する作用のあ
ることを見出した。(Function) The present inventors have investigated the effects of C added into an amorphous substance having a garnet composition.
It has been found that u promotes the generation of crystal nuclei and acts as a pinning site after crystallization to prevent domain wall movement, thereby achieving both crystal grain refinement and coercive force increase at the same time.
その結果、磁気光学効果増大元素Biで多量にYあるい
は希土類元素を置換し、かつ、磁気転移温度調整元素G
a、/VでFe元素を置換した基本組成がBixR1−
JyFes−yo+z(ここでRはYを含む希土類元素
、MはGa、Ajを表す)で1.5≦x≦3.0(酸素
を除いた残余の元素の原子量比で18.8at%以上3
7.5at%以下)、0≦y≦2.0(酸素を除いた残
余の元素の原子量比でOat%以上25.Oat%以下
)を満たすガーネット薄膜にCuを添加することによっ
て、ファラデー回転角を減少させることなく1μm以下
の結晶粒径、1 kOe以上の保磁力を持ち角形性良好
な多結晶薄膜を作製することが可能となった。ここで、
Cuは酸素を除いた残余の元素の原子量比で2.Oat
%以上5.Oat%以下を満たす範囲で添加することが
必要である。すなわちCu量が5.0at%を越えるか
、2.0at%未溝の場合は結晶粒径はIInnより大
きくなり、角形性が低下する。また保磁力もCu添加量
によって制御できる。As a result, a large amount of Y or a rare earth element is replaced by the magneto-optic effect enhancing element Bi, and the magnetic transition temperature adjusting element G
The basic composition in which the Fe element is replaced with a, /V is BixR1-
JyFes-yo+z (where R is a rare earth element including Y, M is Ga, Aj) and 1.5≦x≦3.0 (atomic weight ratio of the remaining elements excluding oxygen is 18.8 at% or more3)
By adding Cu to a garnet thin film that satisfies 0≦y≦2.0 (at least 25.0at% in atomic weight ratio of the remaining elements excluding oxygen), the Faraday rotation angle It has now become possible to produce a polycrystalline thin film with a crystal grain size of 1 μm or less, a coercive force of 1 kOe or more, and good squareness without decreasing the crystal grain size. here,
Cu has an atomic weight ratio of 2.0% of the remaining elements excluding oxygen. Oat
% or more5. It is necessary to add in a range that satisfies Oat% or less. That is, if the Cu amount exceeds 5.0 at% or 2.0 at% is ungrooved, the crystal grain size becomes larger than IInn, and the squareness deteriorates. Moreover, the coercive force can also be controlled by the amount of Cu added.
この様なガーネット多結晶薄膜は、高周波あるいはマグ
ネトロンスパッタ法によってガラス基板上に、まず、非
晶質状態で形成される。スパッタにはArガスあるいは
Arと酸素の混合ガスを使用し、基板加熱やバイアス電
圧の印加を行ってもよい。Cuの添加法としては全ての
収骨を含む焼結体ターゲットを用いるか、Cuを含まな
いターゲット上にCuの金属あるいは酸化物のチップを
置いてもよい。非晶質膜は高温で熱処理をすると異相の
析出する可能性があるため結晶化温度以上、結晶化温度
+100″C以下で結晶化させる。Bi置換ガーネット
の結晶化温度は主にBi量に依存し、本発明では500
〜650℃の範囲にある。Such a garnet polycrystalline thin film is first formed in an amorphous state on a glass substrate by high frequency or magnetron sputtering. Ar gas or a mixed gas of Ar and oxygen may be used for sputtering, and substrate heating and bias voltage may be applied. As a method for adding Cu, a sintered target containing all the bones may be used, or a Cu metal or oxide chip may be placed on a target that does not contain Cu. If an amorphous film is heat-treated at high temperature, a different phase may precipitate, so it is crystallized at a temperature above the crystallization temperature and below the crystallization temperature +100"C. The crystallization temperature of Bi-substituted garnet mainly depends on the amount of Bi. However, in the present invention, 500
~650°C.
(実施例)
以下に本発明の実施例を挙げ図面を参照しながら説明す
る。(Example) Examples of the present invention will be described below with reference to the drawings.
実施例1 (BiGa置換Dy鉄ガーネット)BizD
3/+Ga+Fe40+z (酸素を除いた残余の元
素の原子量比でBiが25.Oat%、Dyが12.5
at%、Gaが12.5at%およびFeが50、Oa
t%)の組成を有するガーネット薄膜および、これにC
uを添加したガーネット薄膜を高周波スパッタリング装
置で形成した。底膜は、例えばArガス圧30 mTo
rr 、高周波パワー200Wにてガラス基板上に実行
した。Cu添加法としては焼結体ターゲット上に金属C
uチップを置いて底膜を行い、Cuチップの面積を変え
ることに依ってCu量を調整した。膜厚は約0、9−で
ある。第1表にターゲラ1411或およびスパッタ膜の
組成を示す。ここで、成分分析は誘導結合型プラズマ発
光分析法(ICP)で行った。Example 1 (BiGa-substituted Dy iron garnet) BizD
3/+Ga+Fe40+z (Atomic weight ratio of remaining elements excluding oxygen: Bi is 25.0at%, Dy is 12.5
at%, Ga is 12.5 at% and Fe is 50, Oa
t%) and a garnet thin film having a composition of
A garnet thin film doped with u was formed using a high frequency sputtering device. For example, the bottom film is prepared under an Ar gas pressure of 30 mTo.
rr, performed on a glass substrate at a radio frequency power of 200W. As a Cu addition method, metal C is added onto a sintered target.
A bottom film was formed by placing a u-chip, and the amount of Cu was adjusted by changing the area of the Cu chip. The film thickness is about 0.9-. Table 1 shows the composition of Targetera 1411 and the sputtered film. Here, component analysis was performed by inductively coupled plasma emission spectrometry (ICP).
第1図には、同しスパッタ条件で底膜し、同じ熱処理を
施したCu3.4at%添加膜(a)と無添加膜中)の
透過光学顕微鏡写真を示す。ここで、熱処理は大気中で
620″Cにて3時間行った。Cu添加により粒径は無
添加の約115以下の1−以下となった。第2図には、
保磁力と角形性について同様の比較を波長633nmの
ファラデーループにより行ったものを示す。Cu3.4
at%添加膜(第2図(a))はCu無添加膜(第2図
(b))に比べ大きな回転角(2,2°/−)を保ちな
がら、5.5 kOeの大保磁力と良好な角形性を持つ
ループを示すことがわかる。第3図にCu8.Oat%
添加膜の透過光学顕微鏡写真(a)とCu 1.6%添
加膜の波長633nmでのファラデーループ(b)を示
す。Cu量が5.Oat%を越えるか、2.0at%未
溝の場合は結晶粒径は1nより大きくなり、ファラデー
ループの角形性も低下した。FIG. 1 shows transmission optical micrographs of a 3.4 at % Cu-added film (a) and a non-additive film) formed as bottom films under the same sputtering conditions and subjected to the same heat treatment. Here, the heat treatment was carried out in the atmosphere at 620"C for 3 hours. With the addition of Cu, the particle size became 1- or less, which is about 115 or less than that without additives. In Figure 2,
A similar comparison of coercive force and squareness is shown using a Faraday loop at a wavelength of 633 nm. Cu3.4
The at% doped film (Fig. 2 (a)) maintains a large rotation angle (2.2°/-) compared to the Cu-free film (Fig. 2 (b)) and has a large coercive force of 5.5 kOe. It can be seen that this shows a loop with good squareness. Figure 3 shows Cu8. Oat%
A transmission optical micrograph (a) of the additive film and a Faraday loop (b) at a wavelength of 633 nm of the Cu 1.6% additive film are shown. Cu amount is 5. When the Oat% was exceeded or 2.0at% was not grooved, the crystal grain size became larger than 1n, and the squareness of the Faraday loop also decreased.
実施例2 (BiA7置換Y置換−鉄ガーネツトB1
Ga置換Gd鉄ガーネット)
第2表にはBiAJ置換Y置換−鉄ガーネツトGa置換
Gd鉄ガーネツト薄膜におけるCuの添加効果結果を示
す。実施例1と同様、1−以下の結晶粒径および1 k
oe以上の保磁力が得られた。Example 2 (BiA7-substituted Y-substituted iron garnet B1
(Ga-substituted Gd-iron garnet) Table 2 shows the results of the addition of Cu in the BiAJ-substituted Y-iron garnet and Ga-substituted Gd-iron garnet thin films. Similar to Example 1, grain size of 1- or less and 1 k
A coercive force greater than oe was obtained.
第 2 表
θ、二波長633nmでのファラデー回転角Hc :保
磁力
(発明の効果)
以上、実施例において説明したように、Cuを添加する
ことによって安価なガラス基板上に大きなファラデー回
転角を保ちながら、■−以下の結晶粒径、1 kOe以
上の保磁力、さらに、非常に良好なファラデーループの
角形性を示すガーネット多結晶薄膜を作製することが可
能となった。この様なガーネッ)7m膜は光磁気記録媒
体として有望である。Table 2 θ, Faraday rotation angle Hc at two wavelengths of 633 nm: Coercive force (effect of the invention) As explained above in the examples, a large Faraday rotation angle can be maintained on an inexpensive glass substrate by adding Cu. However, it has become possible to produce a garnet polycrystalline thin film that exhibits a crystal grain size of - or less, a coercive force of 1 kOe or more, and very good Faraday loop squareness. Such a Garnet 7m film is promising as a magneto-optical recording medium.
第1図は(a)Cu3.4 at%添加および(b)C
u無添加B1Ga置換Dy鉄ガーネット薄膜の結晶組織
の透過光学顕微鏡写真(倍率1000) 、第2図は(
a)Cu 3.4 a t%添加および(b)Cu無添
加B1Ga置換Dy鉄ガーネット薄膜の波長633nm
におけるファラデーループ、第3図(a)はCu8.O
at%添加B1Ga置換DY鉄ガーネット薄膜の結晶組
織の透過光学顕微鏡写真(倍率1000) 、同じ<(
b)はCu1.6at%添加B1Ga置換Dy鉄ガーネ
ット薄膜の波長633nmにおけるファラデーループを
示す図である。
第1図
(0,)
(b)
第2図
(a)
(b)Figure 1 shows (a) Cu3.4 at% addition and (b) C
Transmission optical micrograph (magnification: 1000) of the crystal structure of a B1Ga-substituted Dy iron garnet thin film without u additives, Figure 2 is (
Wavelength 633 nm of a) Cu 3.4 a t% addition and (b) Cu-free B1Ga substituted Dy iron garnet thin film
The Faraday loop in Figure 3(a) is Cu8. O
Transmission optical micrograph (magnification 1000) of crystal structure of at% added B1Ga-substituted DY iron garnet thin film, same <(
b) is a diagram showing a Faraday loop at a wavelength of 633 nm in a B1Ga-substituted Dy iron garnet thin film added with 1.6 at% of Cu. Figure 1 (0,) (b) Figure 2 (a) (b)
Claims (4)
5_−_yO_1_2(ここでRはYを含む希土類元素
、MはGa,Alを表す)で1.5≦x≦3.0、0≦
y≦2.0を満たすガーネット薄膜に、酸素を除いた残
余の元素の原子量比で2.0at%以上5.0at%以
下のCuを添加したことを特徴とする光磁気記録媒体用
ガーネット薄膜。(1) Basic composition is Bi_xR_3_-_xM_yFe_
5_-_yO_1_2 (here, R is a rare earth element containing Y, M represents Ga, Al), 1.5≦x≦3.0, 0≦
A garnet thin film for a magneto-optical recording medium, characterized in that Cu is added in an atomic weight ratio of 2.0 at% to 5.0 at% of the remaining elements excluding oxygen to a garnet thin film satisfying y≦2.0.
求項1記載の光磁気記録媒体用ガーネット薄膜。(2) The garnet thin film for a magneto-optical recording medium according to claim 1, comprising fine polycrystals with a crystal grain size of 1 μm or less.
磁気記録媒体用ガーネット薄膜。(3) The garnet thin film for a magneto-optical recording medium according to claim 1, which has a coercive force of 1 kOe or more.
かつ1kOe以上の保磁力を有する請求項1記載の光磁
気記録媒体用ガーネット薄膜。(4) Consisting of fine polycrystals with a crystal grain size of 1 μm or less,
The garnet thin film for a magneto-optical recording medium according to claim 1, which has a coercive force of 1 kOe or more.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31676289A JPH0690977B2 (en) | 1989-12-06 | 1989-12-06 | Garnet thin film for magneto-optical recording media |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31676289A JPH0690977B2 (en) | 1989-12-06 | 1989-12-06 | Garnet thin film for magneto-optical recording media |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03178105A true JPH03178105A (en) | 1991-08-02 |
JPH0690977B2 JPH0690977B2 (en) | 1994-11-14 |
Family
ID=18080642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31676289A Expired - Fee Related JPH0690977B2 (en) | 1989-12-06 | 1989-12-06 | Garnet thin film for magneto-optical recording media |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0690977B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501913A (en) * | 1990-11-14 | 1996-03-26 | Nippon Steel Corporation | Garnet polycrystalline film for magneto-optical recording medium |
US5702793A (en) * | 1993-02-25 | 1997-12-30 | Nippon Steel Corporation | Magneto-optical recording medium, disk and method of manufacturing the same |
EP1921304A2 (en) | 2006-11-10 | 2008-05-14 | Mitsubishi Heavy Industries, Ltd. | Accumulator fuel injection apparatus for engines |
-
1989
- 1989-12-06 JP JP31676289A patent/JPH0690977B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5501913A (en) * | 1990-11-14 | 1996-03-26 | Nippon Steel Corporation | Garnet polycrystalline film for magneto-optical recording medium |
US5702793A (en) * | 1993-02-25 | 1997-12-30 | Nippon Steel Corporation | Magneto-optical recording medium, disk and method of manufacturing the same |
EP1921304A2 (en) | 2006-11-10 | 2008-05-14 | Mitsubishi Heavy Industries, Ltd. | Accumulator fuel injection apparatus for engines |
Also Published As
Publication number | Publication date |
---|---|
JPH0690977B2 (en) | 1994-11-14 |
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