JPH03166381A - Chemical vapor deposition device - Google Patents

Abstract

PURPOSE:To improve the quality in the atmospheric chemical vapor deposition by providing an inert gas chamber at least at the preceding stage of a vapor deposition chamber and reducing the air to be introduced into the vapor deposition chamber along with a material to be treated. CONSTITUTION:The inside of the device unit 10 is separated by the partition walls 12 and 13 having a passage for a material to be treated into an inlet-side inert gas chamber 1, an atmospheric vapor deposition chamber 2 and an outlet- side inert gas chamber 3. The textile such as a cloth 20 to be treated is introduced into the inert gas chamber 1. The air in the meshes of the cloth 20 is blown off by an inert gas current B formed by a fan 14A, and the released air is sucked to the outside of the chamber 1 along with the inert gas. The cloth 20 freed of air is introduced into the vapor deposition chamber 2, subjected to vapor deposition and brought out of the unit 10 through the inert gas chamber 3. Consequently, chemical vapor deposition is carried out with the uniform quality.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chamber structure of a chemical vapor deposition apparatus suitable for chemical vapor deposition of fibers.

[Conventional technology]

FIG. 2 schematically shows a conventional chemical vapor deposition apparatus. In the figure, reference numeral 10 denotes a processing chamber of the apparatus unit, in which a transfer roll 11 is arranged, and a pair of rolls R. ．． R' is installed, and CF is installed in this room.
Inject a reaction gas of grade 4.

The material 20 to be treated passes from the outside between the inlet pair of rolls R and R' and enters the processing chamber 10, where it is subjected to vapor deposition treatment using a reactive gas and the like, and then transferred to the outlet pair of rolls R and R'. It passes through the gap and is sent out to the outside.

(Problems to be Solved by the Invention) In this conventional chamber structure, the entrance and exit of the chamber is connected to the roll pairs R and R.
Since the material 20 to be treated is a metal strip, a sufficient sealing effect can be obtained because the material 20 to be treated is a fibrous material such as cloth. The problem is that it is difficult to achieve a sufficient seal because there are holes and if too much pressure is applied, the width and thickness will be damaged, and the amount of internal gas leaking will be relatively large.

In addition, when the material to be treated is fibers such as cloth, unlike metal strips, they are brought into the processing chamber with air in them. There was a problem in that the air concentration in the vapor deposition chamber became high, making it impossible to obtain the desired reaction.

The present invention was made to solve this conventional problem, and when the material to be treated is fibers, it is possible to significantly reduce the amount of air brought into the reaction chamber compared to the conventional method, and the internal gas It is an object of the present invention to provide a chemical vapor deposition apparatus that can reduce leakage of chemical substances to the outside compared to conventional methods.

[Means to solve the problem]

In order to achieve the above object, the present invention provides an inert gas chamber which is separated from the vapor deposition chamber by a partition wall having a material passage and is supplied with an inert gas when the material to be processed is fibers. A gas flow generating device is provided to generate a gas flow in this inert gas chamber, and a vacuum pump for regulating the indoor pressure is connected via a valve, and the inert gas chamber is at normal pressure. The pressure is maintained at a pressure not lower than that of the chamber, and the processing material passage, the processing material carrying-in passage of the above-mentioned inert gas chamber, and the processing material carrying-out passage of the vapor deposition chamber are flat passages, each of which has a rectangular frame structure. It was something like that. In a second aspect of the present invention, an inert gas chamber is also provided downstream of the vapor deposition chamber.

(For use) In the present invention, the fibers carried into the inert gas chamber are exposed to the inert gas flow, so that the air contained in the fibers is removed from the fibers by this gas flow. Since it is separated, the amount of air brought into the deposition chamber by the material to be processed is significantly reduced compared to the conventional method.

Since the passage for the fibers is a flat passage made of a rectangular frame, there is little gas flow between the chambers and between the chambers and the outside.

[Example] Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

In FIG. 1, the inside of the device unit 10 includes a partition wall 12
and 13 are divided into an inert gas chamber 1 on the inlet side, a vapor deposition chamber 2 at normal pressure, and an inert gas chamber 3 on the outlet side. A passageway R3 is provided. Furthermore, a material to be treated material carrying-in passage Rl is provided at the end of the apparatus unit 10, and a material to be processed material carrying-out passage R4 is provided at the exit thereof. 4 is a vacuum pump, and valve 5A
and 5B to an inert gas chamber l via a pipe 5. 6 is a vacuum pump, which is connected to the deposition chamber 2 via a pipe 7 having valves 7A and 7B. 8 is a vacuum pump, and valves 9A and 9B
The inert gas chamber 3 is connected to the inert gas chamber 3 via a pipe 9 having a diameter. 14 is a gas flow generator (in this example, a fan device)
The fan 14A is disposed within the inert gas chamber 1. The inert gas chambers 1 and 3 are filled with an inert gas such as argon or helium supplied from an inert gas storage tank 15, and the deposition chamber 2 is filled with a reaction gas supplied from a reaction gas storage tank 16. .

Processing material passages R2 and R3 are formed by a long rectangular frame 1.
It is a flat passage divided by 7, and the processing material carrying passage Rl
The material-to-be-processed carrying-out passage R4 is also a flat passage divided by a long rectangular frame l8.

In this structure, the valve 5A having a large inlet/outlet area,
7A and 9A are opened, the inside of the inert gas chamber 1 is replaced with an inert gas, the inside of the deposition chamber 2 is replaced with a reactive gas, and the inside of the inert gas chamber 3 is replaced with an inert gas. When this replacement is completed, the valve 5A is opened. ,7A
, 9A are closed, and valves 5B, 7B with small inlet and outlet areas,
9B is opened, the pressure in the inert gas chambers I and 3 is maintained at a slightly positive pressure with respect to normal pressure (atmospheric pressure), and the amount of reaction gas in the vapor deposition chamber 2 is maintained at a predetermined amount.

The material to be treated, for example, cloth 20, is carried into the inert gas chamber 1 through the material to be carried in passage R1, and passes through the inert gas chamber 1 while being guided by the rolls 11. A gas flow B of inert gas is created in the gas chamber 1 by a fan 14A, and this gas flow B causes the cloth 2 to
The air in the zero mesh is blown away and separated from the cloth 20. The released air is transferred to inert gas chamber 1 along with inert gas.
being sucked outside. The cloth 20 from which the air contained in the inert gas chamber 1 has been removed enters the vapor deposition chamber 2 through the material path R2, where it undergoes a chemical reaction with the reaction gas and undergoes vapor deposition treatment, and then becomes the material to be processed. It passes through passage R3 to enter inert gas chamber 3, and exits to the outside of apparatus unit 10 through passage R4 for carrying out the material to be treated.

In this manner, in this embodiment, since the air contained in the cloth 20 is removed by the gas flow B within the inert gas chamber 1, air is prevented from being brought into the deposition chamber 2. Therefore, the possibility that the air concentration in the deposition chamber 2 increases as the operating time passes and the desired chemical reaction is hindered is significantly reduced compared to the conventional method, and a constant quality can be maintained at all times. It becomes possible to carry out chemical vapor deposition.

In this embodiment, inert gas chambers 1 and 3 are provided before and after the vapor deposition chamber 2, and the pressures of the inert gas chambers 1 and 3 are slightly higher than the pressure of the normal pressure vapor deposition chamber 2. Therefore, the intrusion of external air into the inert gas chambers 1 and 3 is blocked.

In addition, the material to be processed material inlet path Rl and the material to be processed material to be carried out path R4 are formed by a long rectangular frame 18, and since the frame 18 is not a rotating body, there is no gap between them and the chamber wall. Therefore, leakage of inert gas from the inert gas chambers 1 and 3 to the outside is reduced. Processing material passages R2 and R3 are also formed by long rectangular frames l7.
7 can be provided without creating a gap with respect to the partition walls l2 and 13, so that leakage of reaction gas from the vapor deposition chamber 2 to both the inert gas chambers 1 and 3 is also reduced.

In the above embodiment, the inert gas chamber 3 is also provided downstream of the vapor deposition chamber 2, but this inert gas chamber 3 can be omitted.

〔Effect of the invention〕

As explained above, the present invention has a structure in which an inert gas chamber partitioned by a partition wall is provided at least upstream of the vapor deposition chamber, and an inert gas flow is generated in the inert gas chamber. Air is removed while some fibers pass through this inert gas chamber, so the amount of air brought into the deposition chamber by the fibers can be significantly reduced, allowing normal pressure chemical vapor deposition to be carried out with a simple chamber structure. quality can be improved.

In addition, by forming the passage for the material to be processed with a rectangular frame, gas leakage from the deposition chamber to the inert gas chamber and from the inert gas chamber to the outside can be minimized. It is economical with less loss of reaction gas and inert gas.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing the chamber structure of a conventional chemical vapor deposition apparatus. 1, 3, 1 inert gas chamber, 2- vapor deposition chamber, 4, 6, 8...
·Vacuum pump,

Claims (2)

[Claims] (1) In an apparatus that performs chemical vapor deposition on a material to be processed by passing a material to be processed into a vapor deposition chamber into which a reactive gas is introduced, the vapor deposition chamber is separated from the vapor deposition chamber by a partition wall having a passage for the material to be processed, and an inert gas is introduced into the vapor deposition chamber. An inert gas chamber to be supplied is provided upstream of the vapor deposition chamber, and this inert gas chamber is provided with a gas flow generator for generating a gas flow, and is connected via a valve to a vacuum pump that adjusts the indoor pressure. The inert gas chamber is maintained at a pressure not lower than that of the deposition chamber which is at normal pressure, and the process material passageway, the process material carry-in passage of the inert gas chamber, and the process material carry-out passage of the vapor deposition chamber are 1. A chemical vapor deposition apparatus comprising a flat passage and a rectangular frame, wherein the material to be treated is fibers. (2) An inert gas chamber is provided downstream of the vapor deposition chamber and is separated from the vapor deposition chamber by a partition wall having a passage for the material to be processed and is supplied with an inert gas, and the inert gas chamber is at normal pressure. 2. The chemical vapor deposition method according to claim 1, wherein the pressure is maintained at a pressure not lower than that of the chemical vapor deposition method as claimed in claim 1, wherein said material passageway and said material discharge passageway of said inert gas chamber are flat passageways formed of a rectangular frame. Device.