JPH0379987A - Differential discharge type vacuum treating apparatus - Google Patents
Differential discharge type vacuum treating apparatusInfo
- Publication number
- JPH0379987A JPH0379987A JP21500489A JP21500489A JPH0379987A JP H0379987 A JPH0379987 A JP H0379987A JP 21500489 A JP21500489 A JP 21500489A JP 21500489 A JP21500489 A JP 21500489A JP H0379987 A JPH0379987 A JP H0379987A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- vacuum processing
- differential pressure
- chambers
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005086 pumping Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 abstract description 39
- 239000000463 material Substances 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Furnace Details (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、真空処理室に排気系を備えた差圧室を連設し
、差動排気し乍ら外部から該差圧室を介して真空処理室
へ連続的に導入される被処理物に順次真空熱処理、反応
性イオンブレーティング等の真空処理を施す差動排気形
真空処理装置に関する。[Detailed Description of the Invention] (Industrial Field of Application) The present invention provides a vacuum processing chamber with a differential pressure chamber equipped with an exhaust system, and while differentially exhausting the chamber, a differential pressure chamber is provided from the outside through the differential pressure chamber. The present invention relates to a differential pumping type vacuum processing apparatus that sequentially performs vacuum processing such as vacuum heat treatment and reactive ion blating on workpieces that are continuously introduced into a vacuum processing chamber.
（従来の技術）
従来、例えば第１図示のように、真空処理室ａの左右に
、夫々真空ポンプｂを接続した排気系Ｃを備えた複数の
差圧室ｄ、ｄを連設し、各差圧室ｄ及び真空処理室ａの
室壁に形成した小面積の開口部ｅ、ｅを介して外部から
該真空処理室ａへ連通ずる長尺の被処理物ｆの通路ｇを
設け、該真空処理室ａの圧力を被処理物ｆの真空処理に
適した圧力に維持するために該真空処理室ａに近い差圧
室ｄの圧力を遠い差圧室の圧力よりも低く制御する差動
排気を行なうようにした差動排気形の真空処理装置が知
られている。(Prior Art) Conventionally, for example, as shown in FIG. A passage g for a long workpiece f to be communicated from the outside to the vacuum processing chamber a is provided through small-area openings e, e formed in the walls of the differential pressure chamber d and the vacuum processing chamber a. A differential that controls the pressure in a differential pressure chamber d close to the vacuum processing chamber a to be lower than the pressure in a differential pressure chamber far away in order to maintain the pressure in the vacuum processing chamber a at a pressure suitable for vacuum processing of the workpiece f. A differential pumping type vacuum processing apparatus that performs pumping is known.
該真空処理室ａへ外部から導入された被処理物ｆは、そ
こで真空熱処理、反応性イオンブレーティング等の真空
処理が施され、差圧室ｄを介して外部へと送り出され、
該真空処理室ａの圧力をこれに設けた排気系りの真空ポ
ンプにより例えばＩ Ｘ ｔＯ−’Ｔｏｒｒに維持する
場合、該真空処理室ａの左右に隣接する差圧室ｄ＋、ｄ
ｚは１×１０−’Ｔｏｒｒに制御され、真空処理室ａか
ら遠い差圧室ｄ３、ｄ４は１Ｘ１０−Ｔｏｒｒ、最も遠
い差圧室ｄ６、ｄ８は１００ Ｔｏｒｒに制御される。The workpiece f introduced from the outside into the vacuum processing chamber a is subjected to vacuum processing such as vacuum heat treatment and reactive ion blating there, and is sent out to the outside via the differential pressure chamber d.
When the pressure of the vacuum processing chamber a is maintained at, for example, IXtO-'Torr by a vacuum pump of an exhaust system provided therein, the differential pressure chambers d+, d adjacent to the left and right of the vacuum processing chamber a
z is controlled to 1×10-' Torr, the differential pressure chambers d3 and d4 farthest from the vacuum processing chamber a are controlled to 1×10-Torr, and the farthest differential pressure chambers d6 and d8 are controlled to 100 Torr.
（発明が解決しようとする課題）
第１図示の装置では、真空処理室ａに外部の大気の流入
を防ぐために、多段に設けられた差圧室ｄのうち、最終
段即ち最も真空処理室ａに近い差圧室ｄ、、ｄ２の圧力
を十分低い圧力にする必要があった。そのためには、差
圧室ｄの段数を多くするか、或いは差圧室の圧力を低く
することが必要で、差圧室ｄの段数を多（した場合には
、真空ポンプｂの個数が多くなって装置のイニシャルコ
スト、ランニングコストが非常に高くなり、しかも真空
ポンプｂを設けた多数の排気系Ｃの制御法も複雑になる
欠点があった。(Problem to be Solved by the Invention) In the apparatus shown in the first diagram, in order to prevent external air from flowing into the vacuum processing chamber a, the final stage, that is, the closest vacuum processing chamber a among the differential pressure chambers d provided in multiple stages. It was necessary to bring the pressure in the differential pressure chambers d, d2, which are close to , to a sufficiently low pressure. To achieve this, it is necessary to increase the number of stages in the differential pressure chamber d, or to lower the pressure in the differential pressure chamber. As a result, the initial cost and running cost of the device are extremely high, and the control method for the large number of exhaust systems C provided with vacuum pumps B is also complicated.
また、差圧室の圧力を低くした場合にも、真空ポンプｂ
のランニングコストが非常に高くなる欠点があった。こ
れらの場合でも外部の大気は、各差圧室ｄを介して真空
処理室ａへＱ７、Ｑ２で示すように多少とも流れ込み、
これによって真空処理室ａ内が大気成分によって汚染さ
れ、正確な真空処理を妨げる不都合があった。Also, even when the pressure in the differential pressure chamber is lowered, the vacuum pump b
The disadvantage was that the running costs were extremely high. Even in these cases, the external atmosphere flows into the vacuum processing chamber a through each differential pressure chamber d, as shown by Q7 and Q2,
As a result, the inside of the vacuum processing chamber a is contaminated with atmospheric components, which is an inconvenience that prevents accurate vacuum processing.
本発明は、かかる欠点、不都合を解決し、コストが低減
され排気系の制御を簡単に行なえる差動排気形の真空処
理装置を提供することを目的とするものである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a differential pumping type vacuum processing apparatus which solves these drawbacks and inconveniences, reduces costs, and allows easy control of the pumping system.
（課題を解決するための手段）
本発明では、真空処理室の前後に夫々排気系を備えた複
数の差圧室を連設し、各差圧室及び真空処理室の室壁に
形成した小面積の開口部を介して外部から該真空処理室
へ連通する被処理物の通路を設け、該真空処理室に近い
差圧室の差圧を遠い差圧室の圧力よりも低く制御するよ
うにしたものに於いて、少なくとも１つの差圧室の真空
処理室側に該差圧室の圧力よりも高い圧力のガスを供給
するガス供給系を備えたガス供給室を設けることにより
、前記目的を達成するようにした。(Means for Solving the Problems) In the present invention, a plurality of differential pressure chambers each equipped with an exhaust system before and after a vacuum processing chamber are arranged in series, and a small A passage for the processed material is provided that communicates with the vacuum processing chamber from the outside through an opening in the area, and the differential pressure in the differential pressure chamber close to the vacuum processing chamber is controlled to be lower than the pressure in the differential pressure chamber far away. The above object can be achieved by providing a gas supply chamber equipped with a gas supply system that supplies gas at a pressure higher than the pressure of the differential pressure chamber on the vacuum processing chamber side of at least one differential pressure chamber. I tried to achieve it.
（作 用）
真空処理室及びその前後の各差圧室を夫々の排気系によ
り真空に排気し、この場合真空処理室に近い差圧室を遠
い差圧室よりも低い圧力に制御し、被処理物を開口部を
介して外部から導入してこれに該真空処理室に於いて例
えば真空熱処理を施すことは従来の場合と同様であるが
、本発明のものでは、少なくとも１つの差圧室の真空処
理室側にガス供給室を備えており、該ガス供給室に該１
つの差圧室の圧力よりも高いガスを供給すると、該ガス
が該ガス供給室ε隣接する差圧室或いは真空室へと流れ
、これによって外部からの大気が真空処理室へ流れ込む
ことを防げ、差圧室を多くしたり差圧室の真空ポンプの
排気性能を上げることなく真空処理室の汚染を防げる。(Function) The vacuum processing chamber and the differential pressure chambers before and after the vacuum processing chamber are evacuated by the respective exhaust systems, and in this case, the pressure of the differential pressure chamber close to the vacuum processing chamber is controlled to be lower than that of the differential pressure chamber far away. Introducing the processed material from the outside through an opening and subjecting it to, for example, vacuum heat treatment in the vacuum processing chamber is the same as in the conventional case, but in the present invention, at least one differential pressure chamber is provided. A gas supply chamber is provided on the vacuum processing chamber side of the
When a gas higher than the pressure in the two differential pressure chambers is supplied, the gas flows into the differential pressure chamber or vacuum chamber adjacent to the gas supply chamber ε, thereby preventing atmospheric air from outside from flowing into the vacuum processing chamber, Contamination of the vacuum processing chamber can be prevented without increasing the number of differential pressure chambers or increasing the exhaust performance of the vacuum pump for the differential pressure chambers.
（実施例）
本発明の実施例を図面第２図に基づき説明すると・同図
に於いて符号（１五は真空ポンプ（２）を接続した排気
系（３）を有する真空処理室、（４）は該真空処理室（
１）の前後に連設した差圧室を示し、図示の例では、真
空処理室（１）の前後に夫々３室ずつ差圧室（４〉を設
けるようにした。該真空処理室（１）及び各差圧室（４
〉の室壁には、小面積の開口部（５）を設けて外部から
該真空処理室（１）へと連通ずる被処理物（７）の通路
（６）が形成されるようにした。(Embodiment) An embodiment of the present invention will be explained based on FIG. ) is the vacuum processing chamber (
In the illustrated example, three differential pressure chambers (4) are provided before and after the vacuum processing chamber (1). ) and each differential pressure chamber (4
A small-area opening (5) was provided in the wall of the chamber to form a passageway (6) for the object to be processed (7) communicating from the outside to the vacuum processing chamber (1).
（８〉は各差圧室（４〉に設けられた排気系、（９）は
各排気系（８）に設けた真空ポンプで、排気系（８）は
真空処理室（１）に近い差圧室（４ａ） （４ｂ）の圧
力を低く制御し、この圧力よりも真空処理室（１）に遠
い差圧室（４ｃ） （４ｄ）及び最も遠い差圧室（４ｅ
）（４ｆ’）が順次に高くなるように制御する。(8> is the exhaust system installed in each differential pressure chamber (4>), (9) is the vacuum pump installed in each exhaust system (8), and the exhaust system (8) has a differential pressure close to that of the vacuum processing chamber (1). The pressure in the pressure chambers (4a) (4b) is controlled to be low, and the differential pressure chambers (4c) (4d) and the differential pressure chamber (4e) which are farther from the vacuum processing chamber (1) than this pressure are controlled to be low.
)(4f') is controlled so that it becomes higher sequentially.
こうした構成は従来の差動排気形真空処理装置と同様で
あり、該真空処理室（１）内に設けたヒータやイオンビ
ームを導入して、外部から連続的に送り込まれる鋼板等
の被処理物（７）に真空熱処理や反応性イオンブレーテ
ィング等の真空処理を施すことも同様であるが、この構
成では前記した欠点、不都合が生ずる。This configuration is similar to a conventional differential pumping type vacuum processing apparatus, and a heater and an ion beam installed in the vacuum processing chamber (1) are introduced to continuously feed the workpiece, such as a steel plate, from the outside. The same can be said of (7) by applying vacuum treatment such as vacuum heat treatment or reactive ion blating, but this configuration causes the above-mentioned drawbacks and inconveniences.
そこで本発明に於いては、少なくとも１つの差圧室（４
）の真空処理室側にガス供給室（ＩＯを設け、該ガス供
給室（ＩＯに当該差圧室（４〉の圧力よりも高い圧力を
供給するガス供給系０１）を設けて前記欠点、不都合を
解消するようにした。図示の例は真空処理室（１）に最
も近い２つの差圧室（４ａ） （４ｂ）の真空処理室側
に夫々ガス供給室（１０ａ）＜１０ ｂ）を設けるよう
にしたもので、各ガス供給室（１０ａ） （１０ｂ）に
各差圧室（４ａ） （４ｂ）よりも少し高い圧力の不活
性ガス或いは反応ガスをガス源（＋２１から供給し、開
口部（５） （５）を介して両側の差圧室（４）と真空
処理室（１〉へガス供給室（１０ａ）（１０ｂ）から不
活性ガス或いは反応ガスのガス流（′ｌ３（Ｉ３が生じ
るようにした。Therefore, in the present invention, at least one differential pressure chamber (4
A gas supply chamber (IO) is provided on the vacuum processing chamber side of the vacuum processing chamber (IO), and a gas supply system 01 that supplies a pressure higher than the pressure of the differential pressure chamber (4>) is provided in the gas supply chamber (IO) to solve the above-mentioned drawbacks and inconveniences. In the illustrated example, a gas supply chamber (10a)<10b) is provided on the vacuum processing chamber side of the two differential pressure chambers (4a) (4b) closest to the vacuum processing chamber (1). Inert gas or reactive gas having a pressure slightly higher than that of each differential pressure chamber (4a) (4b) is supplied to each gas supply chamber (10a) (10b) from the gas source (+21), and the opening (5) A gas flow of inert gas or reaction gas ('l3 (I3) I made it happen.
その作動を説明すると、真空処理室（１）及び各差圧室
（４）を夫々の排気系（３） （８）により真空排気し
、各ガス供給室（１０ａ）（１０ｂ）に差圧室（４ａ）
（４ｂ）の圧力よりも高い圧力のガスを供給し、外部
から真空処理室（１）へ導入した被処理物（７）に真空
処理が施されるが、各ガス供給室（１０ａ）（ｔｏ ｂ
）からガスがその前後の真空処理室（１）と差圧室（４
ａ） （４ｂ）へ流れるので、差圧室（４ａ） （４ｂ
）の圧力を十分に低い圧力にまで下げる必要がなく、ま
た差圧室（４〉を多く設けることなく真空処理室（１）
の大気成分ガスの分圧を下げることが出来、外部から通
路（６）を介して侵入する大気はガス供給室（１０ａ）
（１０ｂ）から差圧室（４ａ） （４ｂ）へのガス流ａ
３によって遮られ、真空処理室（１）内へ侵入する量が
減少する。To explain its operation, the vacuum processing chamber (1) and each differential pressure chamber (4) are evacuated by the respective exhaust systems (3) and (8), and the differential pressure chamber is placed in each gas supply chamber (10a) (10b). (4a)
A gas with a pressure higher than that of (4b) is supplied, and the workpiece (7) introduced from the outside into the vacuum processing chamber (1) is subjected to vacuum processing. b
), the gas flows into the vacuum processing chamber (1) and the differential pressure chamber (4) before and after it.
a) (4b), so the differential pressure chamber (4a) (4b
) It is not necessary to lower the pressure in the vacuum processing chamber (1) to a sufficiently low pressure, and there is no need to provide many differential pressure chambers (4).
The partial pressure of the atmospheric component gas can be lowered, and the atmosphere entering from the outside through the passageway (6) is transferred to the gas supply chamber (10a).
Gas flow a from (10b) to differential pressure chamber (4a) (4b)
3, and the amount of intrusion into the vacuum processing chamber (1) is reduced.
該真空処理室（１）に於ける圧力がＩ Ｘ １０−’Ｔ
ｏｒｒの場合、ガス供給室（ｔＯａ）（１０ｂ）に１．
５ Ｘ ＬＯ−３Ｔｏｒｒのガスを供給すると、該真空
処理室（１）に近い差圧室（４ａ） （４ｂ）の圧力を
真空処理室（１）の圧力よりも１桁高いＩ Ｘ １０−
’Ｔｏｒｒとし、次に遠い差圧室（４ｃ） （４ｄ）を
１ ｘ １Ｏ−２Ｔｏｒｒｓ最も遠い差圧室（４ｅ〉（
４ｒ）を１００ Ｔｏｒｒとすることが出来、差圧室（
４ａ）（４ｂ） （４ｅ） （４ｄ）の圧力を高く出来
るのでランニングコストが安くなると共に排気系り８〉
の制御が簡単になる。The pressure in the vacuum processing chamber (1) is I x 10-'T
In the case of orr, 1.
When a gas of 5 X LO-3 Torr is supplied, the pressure in the differential pressure chambers (4a) (4b) near the vacuum processing chamber (1) is increased by one order of magnitude higher than the pressure in the vacuum processing chamber (1).
'Torr, then the next furthest differential pressure chamber (4c) (4d) to 1 x 1O-2 Torrs, the furthest differential pressure chamber (4e〉(
4r) can be set to 100 Torr, and the differential pressure chamber (
4a) (4b) (4e) The pressure of (4d) can be increased, which reduces running costs and improves the exhaust system 8>
control becomes easier.
尚、ガス供給室（ＩＧは、真空処理室（１〉に於いて要
求される真空の質に応じて差圧室（４〉の途中、例えば
差圧室（４ｃ） （４ｅ）の間に設けるようにしてもよ
く、複数個所に設けるようにしてもよい。The gas supply chamber (IG) may be installed in the middle of the differential pressure chamber (4), for example between the differential pressure chambers (4c) and (4e), depending on the quality of vacuum required in the vacuum processing chamber (1). They may be provided at multiple locations.
また、ガス供給室（ｌｏに供給するガスの種類は、真空
処理の内容に応じて決めることが出来、Ｈｅ５Ｎｅｓ
Ａｒ等の不活性ガスを用いるか、例えばＮ２、Ｃ２Ｈ，
等の反応ガスを使用した反応性蒸着の真空処理の場合に
はＮ２％Ｃ２Ｈ４ガスが供給される。In addition, the type of gas supplied to the gas supply chamber (lo) can be determined depending on the content of the vacuum process, and He5Nes
Use an inert gas such as Ar, or use an inert gas such as N2, C2H,
In the case of vacuum processing for reactive vapor deposition using reactive gases such as, N2%C2H4 gas is supplied.
（発明の効果）
以上のように本発明に於いて、差動排気形真空処理装置
の少なくとも１つの差圧室の真空処理室側に該差圧室の
圧力よりも高い圧力のガスが供給されるガス供給室を設
けるようにしたので、多くの差圧室を設けることなく或
いは差圧室の圧力を低くすることなく真空処理室への大
気の侵入を防げ、装置のイニシャルコスト、ランニング
コストを低減させ得られ、差圧室の圧力を余り低くする
必要がないので真空ポンプの制御も簡単になる等の効果
がある。(Effects of the Invention) As described above, in the present invention, gas having a pressure higher than the pressure of the differential pressure chamber is supplied to the vacuum processing chamber side of at least one differential pressure chamber of the differential pumping type vacuum processing apparatus. Since a gas supply chamber is provided, it is possible to prevent atmospheric air from entering the vacuum processing chamber without installing many differential pressure chambers or lowering the pressure in the differential pressure chambers, reducing the initial cost and running cost of the device. Since there is no need to lower the pressure in the differential pressure chamber so much, the vacuum pump can be easily controlled.
第１図は従来の差動排気形真空処理装置の概略の截断側
面図、第２図は本発明の実施例の概略の截断側面図であ
る。
〈１）・・・真空処理室 （３） （８）・・・排気
系（４〉・・・差圧室
（６）・・・通 路
（ＩＯ・・・ガス供給室
Ｉ′！３・・・ガス流
（５）・・・開口部
（７）・・・被処理物
（１１）・・・ガス供給系
同
許 出 願 人
上
日本真空技術株式会社
川崎製鉄株式会社
外３名
り６．’ｌ、；FIG. 1 is a schematic cross-sectional side view of a conventional differential pumping type vacuum processing apparatus, and FIG. 2 is a schematic cross-sectional side view of an embodiment of the present invention. <1)... Vacuum processing chamber (3) (8)... Exhaust system (4>... Differential pressure chamber (6)... Passage (IO... Gas supply chamber I'!3. ... Gas flow (5) ... Opening (7) ... Workpiece (11) ... Gas supply system approval application Personnel Japan Vacuum Technology Co., Ltd. Kawasaki Steel Corporation 3 persons 6 .'l;
Claims (1)
を連設し、各差圧室及び真空処理室の室壁に形成した小
面積の開口部を介して外部から該真空処理室へ連通する
被処理物の通路を設け、該真空処理室に近い差圧室の差
圧を遠い差圧室の圧力よりも低く制御するようにしたも
のに於いて、少なくとも１つの差圧室の真空処理室側に
該差圧室の圧力よりも高い圧力のガスを供給するガス供
給系を備えたガス供給室を設けたことを特徴とする差動
排気形真空処理装置。A plurality of differential pressure chambers each equipped with an exhaust system are installed before and after the vacuum processing chamber, and the vacuum processing chamber is accessed from the outside through small-area openings formed in the chamber walls of each differential pressure chamber and the vacuum processing chamber. In the vacuum processing chamber, the pressure difference in the differential pressure chamber close to the vacuum processing chamber is controlled to be lower than the pressure in the differential pressure chamber far from the vacuum processing chamber. A differential pumping type vacuum processing apparatus, characterized in that a gas supply chamber is provided on the vacuum processing chamber side and includes a gas supply system that supplies gas at a pressure higher than the pressure of the differential pressure chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1215004A JP2614516B2 (en) | 1989-08-23 | 1989-08-23 | Differential exhaust type vacuum processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1215004A JP2614516B2 (en) | 1989-08-23 | 1989-08-23 | Differential exhaust type vacuum processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0379987A true JPH0379987A (en) | 1991-04-04 |
| JP2614516B2 JP2614516B2 (en) | 1997-05-28 |
Family
ID=16665114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1215004A Expired - Lifetime JP2614516B2 (en) | 1989-08-23 | 1989-08-23 | Differential exhaust type vacuum processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2614516B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014227580A (en) * | 2013-05-23 | 2014-12-08 | 株式会社アルバック | Film deposition device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282770U (en) * | 1988-12-09 | 1990-06-26 |
-
1989
- 1989-08-23 JP JP1215004A patent/JP2614516B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282770U (en) * | 1988-12-09 | 1990-06-26 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014227580A (en) * | 2013-05-23 | 2014-12-08 | 株式会社アルバック | Film deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2614516B2 (en) | 1997-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6039770A (en) | Semiconductor device manufacturing system having means for reducing a pressure difference between loadlock and processing chambers | |
| JPH07211761A (en) | Transfer of material to be treated in treating device | |
| US7021903B2 (en) | Fore-line preconditioning for vacuum pumps | |
| US6251192B1 (en) | Vacuum exhaust system | |
| US20090142165A1 (en) | Transfer chamber for a vacuum processing apparatus, and a vacuum processing apparatus | |
| JPS6144947B2 (en) | ||
| JPH0379987A (en) | Differential discharge type vacuum treating apparatus | |
| US20100239762A1 (en) | Process and apparatus for the introduction and removal of a substrate into and from a vacuum coating unit | |
| US6767504B2 (en) | Heat treatment furnace | |
| JP3305817B2 (en) | Semiconductor manufacturing apparatus and wafer processing method | |
| JPS62106627A (en) | Semiconductor manufacturing device | |
| US20030079550A1 (en) | Method and apparatus for regulating exhaust pressure in evacuation system of semiconductor process chamber | |
| WO2007002020A2 (en) | Solder process system | |
| JPS59133365A (en) | Vacuum device | |
| JP3388654B2 (en) | Vacuum processing method and equipment | |
| JPH05148650A (en) | Thin film treating device | |
| JPS63307273A (en) | Apparatus for sputtering thin layer to substrate | |
| JP2007308730A (en) | Vacuum processing apparatus and vacuum processing method | |
| JP2841581B2 (en) | Chemical vapor deposition equipment | |
| JP3197969B2 (en) | Semiconductor substrate processing method | |
| JPH08340037A (en) | Semiconductor manufacturing equipment | |
| JPS6037871B2 (en) | How sputtering equipment works | |
| JPH02305964A (en) | Vacuum treating device | |
| JPS61152019A (en) | Surface processor | |
| JP2841580B2 (en) | Chemical vapor deposition equipment |