JPH0316613U - - Google Patents
Info
- Publication number
- JPH0316613U JPH0316613U JP7816089U JP7816089U JPH0316613U JP H0316613 U JPH0316613 U JP H0316613U JP 7816089 U JP7816089 U JP 7816089U JP 7816089 U JP7816089 U JP 7816089U JP H0316613 U JPH0316613 U JP H0316613U
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- film
- chamber
- discharge port
- nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 2
- 239000003595 mist Substances 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第1図は、本考案の各実施例を示す霧化薄膜形
成装置の概略縦断側面図、第2図は、第1図のA
−A位置での断面図、第3図と第4図は、成膜用
ノズルの構造例を示す一部切欠の斜視図、第5図
は、従来例を示す霧化薄膜形成装置の概略縦断側
面図、第6図は、同従来例における成膜用ノズル
の構造例を示す第5図のB−B位置で切断した斜
視図、第7図a〜cは、上記各装置における基板
上の位置と形成された透明導電膜の膜厚との関係
の概略を示すグラフである。
1…霧化器、3…成膜用ノズル、3a…成膜用
ノズルの吐出口、4…成膜室、7…均熱板、8…
ヒータ、13…仕切部材。
FIG. 1 is a schematic longitudinal sectional side view of an atomized thin film forming apparatus showing each embodiment of the present invention, and FIG.
- A cross-sectional view at position A, FIGS. 3 and 4 are partially cutaway perspective views showing structural examples of film-forming nozzles, and FIG. 5 is a schematic vertical cross-section of a conventional atomized thin film forming apparatus. 6 is a perspective view taken along the line B-B in FIG. 5 showing an example of the structure of the film-forming nozzle in the conventional example, and FIGS. It is a graph showing the outline of the relationship between the position and the film thickness of the formed transparent conductive film. DESCRIPTION OF SYMBOLS 1... Atomizer, 3... Film-forming nozzle, 3a... Discharge port of the film-forming nozzle, 4... Film-forming chamber, 7... Soaking plate, 8...
Heater, 13... partition member.
Claims (1)
液の霧の吐出口3aを上方に向けて開口させた成
膜用ノズル3と、同成膜用ノズル3の吐出口3a
の上を通過するよう一方向に搬送される基板6を
天面とする成膜室4と、成膜室4にある上記基板
6を加熱する手段とからなる霧化薄膜形成装置に
おいて、上記成膜室4の幅方向に沿つて長く開口
した成膜用ノズル3の吐出口3aと上記霧化器1
との間に、霧の流れを規制する仕切部材13が設
けられ、この仕切部材13の単位面積当りの霧の
通路面積が成膜用ノズル3の中央部より両側部が
広いことを特徴とする霧化薄膜形成装置。 An atomizer 1 that atomizes a raw material solution for a thin film, a film forming nozzle 3 whose discharge port 3a for mist of the raw material solution is opened upward, and a discharge port 3a of the film forming nozzle 3.
In an atomized thin film forming apparatus comprising a film forming chamber 4 whose top surface is a substrate 6 that is conveyed in one direction so as to pass over the film forming chamber 4, and a means for heating the substrate 6 located in the film forming chamber 4, The discharge port 3a of the film-forming nozzle 3, which has a long opening along the width direction of the film chamber 4, and the atomizer 1
A partition member 13 for regulating the flow of mist is provided between the film forming nozzle 3 and the film forming nozzle 3. Atomized thin film forming device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7816089U JPH0648685Y2 (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7816089U JPH0648685Y2 (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0316613U true JPH0316613U (en) | 1991-02-19 |
JPH0648685Y2 JPH0648685Y2 (en) | 1994-12-12 |
Family
ID=31621184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7816089U Expired - Lifetime JPH0648685Y2 (en) | 1989-06-30 | 1989-06-30 | Atomization thin film forming equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0648685Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008101254A (en) * | 2006-10-20 | 2008-05-01 | Mitsubishi Heavy Ind Ltd | Vapor deposition apparatus and vapor deposition method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3717575B2 (en) * | 1996-02-08 | 2005-11-16 | 株式会社リコー | Thin film forming equipment |
JP3717579B2 (en) * | 1996-02-23 | 2005-11-16 | 株式会社リコー | Retractable film deposition system |
-
1989
- 1989-06-30 JP JP7816089U patent/JPH0648685Y2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008101254A (en) * | 2006-10-20 | 2008-05-01 | Mitsubishi Heavy Ind Ltd | Vapor deposition apparatus and vapor deposition method |
JP4576370B2 (en) * | 2006-10-20 | 2010-11-04 | 三菱重工業株式会社 | Vapor deposition apparatus and vapor deposition method |
Also Published As
Publication number | Publication date |
---|---|
JPH0648685Y2 (en) | 1994-12-12 |
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