JPH0316368U - - Google Patents
Info
- Publication number
- JPH0316368U JPH0316368U JP7664289U JP7664289U JPH0316368U JP H0316368 U JPH0316368 U JP H0316368U JP 7664289 U JP7664289 U JP 7664289U JP 7664289 U JP7664289 U JP 7664289U JP H0316368 U JPH0316368 U JP H0316368U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- side electrode
- emitting element
- heat sinks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
Description
第1図は本考案の第1の実施例を示す半導体発
光装置の構造の斜視図、第2図は本考案の第2の
実施例を示す半導体発光装置の斜視図、第3図は
従来のヒートシンクの斜視図である。
1,18,28,30……TiPtAu電極、
2,17,29……Siヒートシンク、3,10
,13,……Ti,4,11,14……Pt、5
,24,44……AuSn融着材、6,25,4
5……レーザp側電極、7,26,46……レー
ザチツプ、8,27,47……レーザn側電極、
9……Au,12,15,31,34……PbS
n融着材、16……SiO2絶縁膜、21,36
,41……AU電極、22,32,35,42…
…TiPt、23,33,43……ダイヤモンド
ヒートシンク。
FIG. 1 is a perspective view of the structure of a semiconductor light emitting device showing a first embodiment of the present invention, FIG. 2 is a perspective view of a semiconductor light emitting device showing a second embodiment of the present invention, and FIG. FIG. 3 is a perspective view of a heat sink. 1, 18, 28, 30...TiPtAu electrode,
2,17,29...Si heat sink, 3,10
,13,...Ti,4,11,14...Pt,5
, 24, 44...AuSn fusion material, 6, 25, 4
5... Laser p-side electrode, 7, 26, 46... Laser chip, 8, 27, 47... Laser n-side electrode,
9...Au, 12, 15, 31, 34...PbS
n Fusion material, 16...SiO 2 insulating film, 21, 36
, 41...AU electrode, 22, 32, 35, 42...
...TiPt, 23, 33, 43...Diamond heat sink.
Claims (1)
シンクの少なくとも一方には半導体発光素子を挟
持するための溝部を有し、前記半導体発光素子の
n側電極とp側電極の両電極が前記ヒートシンク
に固着されていることを特徴とする半導体発光装
置。 Two heat sinks are provided, at least one of the two heat sinks has a groove for holding a semiconductor light emitting element, and both an n-side electrode and a p-side electrode of the semiconductor light emitting element are fixed to the heat sink. A semiconductor light emitting device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7664289U JPH0316368U (en) | 1989-06-29 | 1989-06-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7664289U JPH0316368U (en) | 1989-06-29 | 1989-06-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0316368U true JPH0316368U (en) | 1991-02-19 |
Family
ID=31618294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7664289U Pending JPH0316368U (en) | 1989-06-29 | 1989-06-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0316368U (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011522407A (en) * | 2008-06-02 | 2011-07-28 | イェノプティック レーザー ゲーエムベーハー | Heat transfer device having at least one semiconductor element, in particular a laser element or a light emitting diode element, and a method for assembling the same |
JP2016167492A (en) * | 2015-03-09 | 2016-09-15 | スタンレー電気株式会社 | Light emission device |
-
1989
- 1989-06-29 JP JP7664289U patent/JPH0316368U/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011522407A (en) * | 2008-06-02 | 2011-07-28 | イェノプティック レーザー ゲーエムベーハー | Heat transfer device having at least one semiconductor element, in particular a laser element or a light emitting diode element, and a method for assembling the same |
JP2016167492A (en) * | 2015-03-09 | 2016-09-15 | スタンレー電気株式会社 | Light emission device |