JPH0315508B2 - - Google Patents
Info
- Publication number
- JPH0315508B2 JPH0315508B2 JP61002626A JP262686A JPH0315508B2 JP H0315508 B2 JPH0315508 B2 JP H0315508B2 JP 61002626 A JP61002626 A JP 61002626A JP 262686 A JP262686 A JP 262686A JP H0315508 B2 JPH0315508 B2 JP H0315508B2
- Authority
- JP
- Japan
- Prior art keywords
- polyimide resin
- wafer
- ultraviolet rays
- coating method
- roll coater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920001721 polyimide Polymers 0.000 claims description 41
- 239000009719 polyimide resin Substances 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 27
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、半導体基板や、ガラス基板等の基板
（以下ウエハと称する）の表面にポリイミド系樹
脂を均一に塗布する方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for uniformly applying a polyimide resin to the surface of a substrate (hereinafter referred to as a wafer) such as a semiconductor substrate or a glass substrate.
〈従来技術〉
半導体デイバイスや薄膜ハイブリツド回路等の
信頼性向上のため、半導体デイバイス製造工程
で、例えばウエハの表面に外界の影響を受けない
ようにする一種の表面不働態化処理技術としての
パツシベーシヨン技術が周知である。例えば刊行
物「最新LSIプロセス技術」（株式会社工業調査
会1983年発行337〜346ページ）には、ウエハ表面
にSi3N4やSiO2等の保護膜を形成する方法や、多
層配線における層間絶縁膜として用いられるポリ
イミド系樹脂をパツシベーシヨン膜としても使用
できることが開示されている。<Prior art> Passivation technology is a type of surface passivation treatment technology that prevents the surface of a wafer from being affected by the outside world, for example, in the semiconductor device manufacturing process in order to improve the reliability of semiconductor devices and thin-film hybrid circuits. is well known. For example, the publication ``Latest LSI Process Technology'' (published by Kogyo Kenkyukai Co., Ltd., 1983, pages 337-346) describes methods for forming protective films such as Si 3 N 4 and SiO 2 on wafer surfaces, and It is disclosed that the polyimide resin used as an insulating film can also be used as a passivation film.
そして、ポリイミド系樹脂膜は、Si3N4やSiO2
膜に比べ次のようなすぐれた特性を有する。 The polyimide resin film is made of Si 3 N 4 or SiO 2
It has the following superior properties compared to membranes.
ピンホールやクラツクの発生がないこと。 There shall be no pinholes or cracks.
膜の平坦化が容易であること。 The film should be easy to flatten.
金属イオン等、含有不純物が少いこと。 Contains few impurities such as metal ions.
有害なエツチング液等を使用しなくても微細
加工できること。 Ability to perform microfabrication without using harmful etching liquids.
耐熱性にすぐれていること。 Must have excellent heat resistance.
このような利点があるため、現在、ポリイミド
系樹脂は、半導体デイバイス等のパツシベーシヨ
ン膜や、配線層絶縁膜として使用され、その用途
も増大しつつある。 Because of these advantages, polyimide resins are currently used as passivation films for semiconductor devices and wiring layer insulating films, and their uses are increasing.
そこで、ウエハの表面に例えば配線層間絶縁膜
として、ポリイミド系樹脂を塗布する一般的な方
法として、従来第２図のフローチヤートに示すよ
うなものがある。 Accordingly, as a general method for coating the surface of a wafer with a polyimide resin as, for example, a wiring interlayer insulating film, there is a conventional method as shown in the flowchart of FIG.
それは、ステツプS11でウエハ表面を洗浄・乾
燥し、必要に応じて専用接着強化剤を塗布する。
次にステツプS12でポリイミド系樹脂を、デツピ
ング法又はスピンコート法等で塗布し、ステツプ
S13でポリイミド系樹脂を乾燥させるためベーキ
ングする。その後はステツプS14で必要に応じて
フオトレジスト塗布、現像、エツチング、剥離洗
浄等の表面処理を行い、さらに必要ならばウエハ
表面に所要の配線層間絶縁膜を形成する。 In step S11 , the wafer surface is cleaned and dried, and if necessary, a special adhesive strengthening agent is applied.
Next, in step S12 , polyimide resin is applied by a depping method or spin coating method, and the step
Bake in S 13 to dry the polyimide resin. Thereafter, in step S14 , surface treatments such as photoresist coating, development, etching, peeling and cleaning are performed as necessary, and further, if necessary, a required wiring interlayer insulating film is formed on the wafer surface.
そしてウエハ表面にポリイミド系樹脂を塗布す
る一般的な方法としては、スピンコート、デツピ
ング、あるいはロールコート等の方法が用いられ
ている。 As a general method for applying polyimide resin to the wafer surface, methods such as spin coating, depping, or roll coating are used.
〈発明が解決しようとする問題点〉
しかしながら、上記従来の方法のうち、スピン
コート方式の場合には、余剰の塗布液はスピンア
ウトされるため高価なポリイミド系樹脂を無駄に
使用することになり、さらにウエハが角形である
ときは、コーナ部分での膜厚が不均一となり易
い。<Problems to be Solved by the Invention> However, among the above conventional methods, in the case of the spin coating method, the excess coating liquid is spun out, resulting in the wasteful use of expensive polyimide resin. Furthermore, when the wafer is square, the film thickness tends to be uneven at the corner portions.
また、デツピング方式の場合には塗布液貯留槽
に浸漬したウエハを引き上げる方式であるため、
均一な膜厚を形成することが困難である。 In addition, in the case of the tapping method, the wafer is pulled up after being immersed in the coating liquid storage tank.
It is difficult to form a uniform film thickness.
そして、ロールコート方式の場合には、コーテ
イングローラの周面に塗布液を受容するための塗
布用溝が一定のピツチで切設してあるため、ウエ
ハの表面にポリイミド系樹脂のスジ状の山が形成
され、その表面の膜が凹凸となるという問題があ
つた。本発明の目的は、このような問題点を解消
することを目的とし、ポリイミド系樹脂の塗布方
法においてポリイミド系樹脂の均一な層を容易に
形成させることにある。 In the case of the roll coating method, coating grooves are cut at a certain pitch on the circumferential surface of the coating roller to receive the coating liquid, so streak-like mountains of polyimide resin are formed on the surface of the wafer. There was a problem that the film formed on the surface became uneven. An object of the present invention is to solve these problems and to easily form a uniform layer of polyimide resin in a polyimide resin coating method.
〈問題点を解決するための手段〉
本発明は、ウエハの表面にポリイミド系樹脂
を、所要の塗布方法にて塗布後、その表面に所要
時間、紫外線を照射することを特徴とするもの
で、これにより、ポリイミド系樹脂層の表面を均
一化させるポリイミド系樹脂塗布方法である。<Means for Solving the Problems> The present invention is characterized in that after applying a polyimide resin to the surface of a wafer using a required coating method, the surface is irradiated with ultraviolet rays for a required period of time. This is a polyimide resin coating method that makes the surface of the polyimide resin layer uniform.
〈作用〉
洗浄されたウエハ表面にポリイミド系樹脂を塗
布し、その表面に紫外線を照射すると、ポリイミ
ド系樹脂層の表面の凹凸が軟化し、所要の時間後
に均一化する。<Function> When a polyimide resin is applied to the surface of a cleaned wafer and the surface is irradiated with ultraviolet rays, the irregularities on the surface of the polyimide resin layer are softened and become uniform after a required period of time.
通常、フオトレジスト層に紫外線を照射する
と、フオトレジスト層は硬化するが、実験によれ
ばポリイミド系樹脂層に、紫外線を照射すると、
逆に軟化し始める。 Normally, when a photoresist layer is irradiated with ultraviolet rays, the photoresist layer hardens, but experiments have shown that when a polyimide resin layer is irradiated with ultraviolet rays,
On the contrary, it begins to soften.
〈実施例〉
第１図は本発明の実施例による処理工程のフロ
ーチヤートを示し、第２図はその処理装置の概要
図を示す。<Example> FIG. 1 shows a flowchart of a processing step according to an example of the present invention, and FIG. 2 shows a schematic diagram of the processing apparatus.
例えばガラス基板等のウエハ１を所要の洗浄液
で洗浄し、純水で最終洗浄を行い、水切り乾燥処
理を行う（第１図ステツプS1）。次に必要に応じ
て、紫外線照射し、オゾンをふきつけ、ウエハ表
面の有機物を除去する。第２図のロールコーター
２の左側には紫外線照射オゾン供給手段１１が多
数の搬送ローラ６の上に吊設されている。 For example, a wafer 1 such as a glass substrate is cleaned with a required cleaning liquid, and a final cleaning is performed with pure water, followed by a draining and drying process (step S 1 in FIG. 1). Next, if necessary, ultraviolet rays are irradiated and ozone is applied to remove organic substances on the wafer surface. On the left side of the roll coater 2 in FIG. 2, an ultraviolet irradiation ozone supply means 11 is suspended above a large number of conveying rollers 6.
次に、ポリイミド樹脂10をロールコーター２に
て、ウエハ１の表面に塗布する（ステツプS2）。 Next, polyimide resin 10 is applied to the surface of wafer 1 using roll coater 2 (step S 2 ).
第２図にロールコータ２、ドクターローラ４、
バツクアツプローラ５、樹脂供給ノズル３を示し
ている。ロールコター２の表面には多数の溝が切
設されロールコーターにてポリイミド系樹脂１０
をウエハに塗布した時の断面形状は第３図Ａのよ
うに、ロールコーター２の表面の溝と同一ピツチ
でポリイミド樹脂がウエハ１の表面に山形１０ａ
に塗布される。 Figure 2 shows roll coater 2, doctor roller 4,
A backup roller 5 and a resin supply nozzle 3 are shown. A large number of grooves are cut on the surface of the roll coater 2, and polyimide resin 10 is coated with the roll coater.
When applied to the wafer, the cross-sectional shape of the polyimide resin is as shown in FIG.
is applied to.
次にウエハ１の上方より第２図のように水銀灯
等の紫外線照射手段７によつて所要時間紫外線を
照射する。特に波長184.9nm及び253.7nmの紫外
線を含む場合は、ほぼ１分間で第３図Ａのような
断面形状１０ａから、第３図Ｂのような断面形状
１０ｂにポリイミド系樹脂が変化し、ほぼ２分間
で第３図Ｃの１０ｃのようにポリイミド系樹脂が
平坦化する。 Next, as shown in FIG. 2, ultraviolet rays are irradiated from above the wafer 1 for a required period of time using an ultraviolet irradiating means 7 such as a mercury lamp. In particular, when ultraviolet rays with wavelengths of 184.9 nm and 253.7 nm are included, the polyimide resin changes from the cross-sectional shape 10a as shown in FIG. 3A to the cross-sectional shape 10b as shown in FIG. Within minutes, the polyimide resin becomes flat as shown at 10c in FIG. 3C.
実験によると、波長184.9nmの紫外線を用いる
と特に効果的であり、ちなみに、この波長
184.9nmの紫外線を合成石英ガラスで遮断し、
253.7nmの波長の紫外線を照射すると、第３図Ａ
からＢに移るのに２分以上かかり、また紫外線照
射手段７の下に、ソーダーガラスを挿入して波長
184.9nm及び253.7nmを遮断し、波長365nm以上
の紫外線で照射すると、第３図Ａのポリイミド系
樹脂１０ａが平坦化するのにさらに長時間を要す
る。 Experiments have shown that ultraviolet light with a wavelength of 184.9 nm is particularly effective;
Blocks 184.9nm ultraviolet rays with synthetic quartz glass,
When irradiated with ultraviolet rays with a wavelength of 253.7 nm, Figure 3A
It takes more than 2 minutes to move from to B, and a soda glass is inserted under the ultraviolet irradiation means 7 to
If 184.9 nm and 253.7 nm are blocked and irradiation is performed with ultraviolet rays having a wavelength of 365 nm or more, it will take a longer time to flatten the polyimide resin 10a shown in FIG. 3A.
本実施例において、ポリイミド系樹脂の粘度を
変え、又は、ロールコーター２と、ドクターロー
ラ４との間の間隔又は、ロールコータ２と、バツ
クアツプローラ５との間の間隔を変えることによ
りウエハ１表面のポリイミド系樹脂の膜厚を
1.5μmから4.0μmに変えた場合においても、ほぼ
２分間の紫外線を照射することにより第４図Ｃの
ように平坦化した。 In this example, by changing the viscosity of the polyimide resin, or by changing the distance between the roll coater 2 and the doctor roller 4, or the distance between the roll coater 2 and the backup roller 5, the wafer 1 The thickness of the polyimide resin on the surface
Even when the thickness was changed from 1.5 μm to 4.0 μm, flattening was achieved as shown in FIG. 4C by irradiation with ultraviolet rays for approximately 2 minutes.
次にウエハ１をホツトプレート９の上を搬送ベ
ルト８で搬送させ、ウエハ１を100℃の温度に約
６分間加熱すると、ポリイミド系樹脂はウエハ１
の表面で均一厚さに硬化される。 Next, the wafer 1 is conveyed on the hot plate 9 by the conveyor belt 8, and the wafer 1 is heated to a temperature of 100°C for about 6 minutes.
hardened to a uniform thickness on the surface.
尚、本実施例ではウエハ１の表面にポリイミド
系樹脂をロールコーター２にて塗布する方法を記
載しているが、スピンコートによる方法や、デツ
プによる塗布方法においても、実施できることは
言うまでもない。 In this embodiment, a method is described in which the polyimide resin is applied to the surface of the wafer 1 using the roll coater 2, but it goes without saying that a spin coating method or a dip coating method can also be used.
〈発明の効果〉
(1) ウエハの表面にポリイミド系樹脂を塗布した
後、所定波長の紫外線を所要時間照射するだけ
でウエハ表面のポリイミド系樹脂を平坦化する
ことができ、ウエハの品質及び生産性を向上さ
せることができる。<Effects of the invention> (1) After applying polyimide resin to the wafer surface, the polyimide resin on the wafer surface can be flattened by simply irradiating ultraviolet rays of a predetermined wavelength for the required time, improving wafer quality and production. can improve sex.
(2) 特にロールコーターによりポリイミド系樹脂
をウエハ表面に塗布する場合には大サイズのウ
エハにも実施できるとともに、レベリングを良
くすることができ、かつ、ポリイミド系樹脂を
無駄に使用することがない。(2) In particular, when applying polyimide resin to the wafer surface using a roll coater, it can be applied to large wafers, improves leveling, and does not waste polyimide resin. .
第１図は本発明の実施例による処理工程のフロ
ーチヤート、第２図はその処理装置の概要図、第
３図はポリイミド系樹脂層に紫外線を照射したと
きの変化の態様と模式的に示す説明図、第４図は
従来の処理工程のフローチヤートである。
１……基板（ウエハ）、２……ロールコーター、
３……樹脂供給ノズル、４……ドクターローラ、
５……バツクアツプローラ、６……搬送ローラ、
７……紫外線照射手段、８……搬送ベルト、９…
…ホツトプレート、１０……ポリイミド樹脂。
Fig. 1 is a flowchart of the treatment process according to an embodiment of the present invention, Fig. 2 is a schematic diagram of the processing equipment, and Fig. 3 schematically shows the changes in the polyimide resin layer when it is irradiated with ultraviolet rays. The explanatory diagram, FIG. 4, is a flowchart of a conventional treatment process. 1...Substrate (wafer), 2...Roll coater,
3... Resin supply nozzle, 4... Doctor roller,
5... Backup roller, 6... Conveyance roller,
7... Ultraviolet irradiation means, 8... Conveyor belt, 9...
...Hot plate, 10...Polyimide resin.
Claims (1)
の表面に所要時間、所定波長の紫外線を照射し、
ポリイミド系樹脂層の表面を均一化させるポリイ
ミド系樹脂塗布方法。 ２ ポリイミド系樹脂層表面に紫外線を照射後、
基板を、所要温度に所要時間加熱させる特許請求
の範囲第１項記載のポリイミド系樹脂塗布方法。 ３ 基板の表面にポリイミド系樹脂をロールコー
ターにて塗布する特許請求の範囲第１項記載のポ
リイミド系樹脂塗布方法。 ４ 紫外線の波長を365nm以下、主に184.9nm前
後とする特許請求の範囲第１項記載のポリイミド
系樹脂塗布方法。[Claims] 1. After applying a polyimide resin to the surface of a substrate, the surface is irradiated with ultraviolet rays of a predetermined wavelength for a required time,
A polyimide resin coating method that makes the surface of the polyimide resin layer uniform. 2 After irradiating the surface of the polyimide resin layer with ultraviolet rays,
The polyimide resin coating method according to claim 1, wherein the substrate is heated to a required temperature for a required period of time. 3. The polyimide resin coating method according to claim 1, wherein the polyimide resin is coated on the surface of the substrate using a roll coater. 4. The polyimide resin coating method according to claim 1, wherein the wavelength of the ultraviolet rays is 365 nm or less, mainly around 184.9 nm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61002626A JPS62160173A (en) | 1986-01-08 | 1986-01-08 | Method for applying polyimide resin |
| KR860011151A KR870007560A (en) | 1986-01-08 | 1986-12-23 | Polyimide Resin Coating Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61002626A JPS62160173A (en) | 1986-01-08 | 1986-01-08 | Method for applying polyimide resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62160173A JPS62160173A (en) | 1987-07-16 |
| JPH0315508B2 true JPH0315508B2 (en) | 1991-03-01 |
Family
ID=11534604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61002626A Granted JPS62160173A (en) | 1986-01-08 | 1986-01-08 | Method for applying polyimide resin |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS62160173A (en) |
| KR (1) | KR870007560A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2823016B2 (en) * | 1986-12-25 | 1998-11-11 | ソニー株式会社 | Method of manufacturing transmission screen |
| JPH0649185B2 (en) * | 1988-12-29 | 1994-06-29 | 新日鐵化学株式会社 | Flexible printed wiring board manufacturing method |
| JP2017125633A (en) | 2016-01-12 | 2017-07-20 | 住友精密工業株式会社 | Heat exchanger |
-
1986
- 1986-01-08 JP JP61002626A patent/JPS62160173A/en active Granted
- 1986-12-23 KR KR860011151A patent/KR870007560A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR870007560A (en) | 1987-08-20 |
| JPS62160173A (en) | 1987-07-16 |
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