JPH0315279B2 - - Google Patents

Info

Publication number
JPH0315279B2
JPH0315279B2 JP57111520A JP11152082A JPH0315279B2 JP H0315279 B2 JPH0315279 B2 JP H0315279B2 JP 57111520 A JP57111520 A JP 57111520A JP 11152082 A JP11152082 A JP 11152082A JP H0315279 B2 JPH0315279 B2 JP H0315279B2
Authority
JP
Japan
Prior art keywords
transistor
bit line
write
signal
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57111520A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593782A (ja
Inventor
Kazuo Ooami
Yasuhisa Sugao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57111520A priority Critical patent/JPS593782A/ja
Publication of JPS593782A publication Critical patent/JPS593782A/ja
Publication of JPH0315279B2 publication Critical patent/JPH0315279B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57111520A 1982-06-30 1982-06-30 半導体記憶装置 Granted JPS593782A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57111520A JPS593782A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57111520A JPS593782A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS593782A JPS593782A (ja) 1984-01-10
JPH0315279B2 true JPH0315279B2 (enrdf_load_stackoverflow) 1991-02-28

Family

ID=14563403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57111520A Granted JPS593782A (ja) 1982-06-30 1982-06-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS593782A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS593782A (ja) 1984-01-10

Similar Documents

Publication Publication Date Title
US5065363A (en) Semiconductor storage device
GB2156616A (en) A semiconductor integrated circuit
JPH0241113B2 (enrdf_load_stackoverflow)
US3969707A (en) Content-Addressable Memory capable of a high speed search
JPS633394B2 (enrdf_load_stackoverflow)
US5016214A (en) Memory cell with separate read and write paths and clamping transistors
US3671772A (en) Difference amplifier
EP0055409A1 (en) A semiconductor memory
JPS5855597B2 (ja) 双安定半導体メモリセル
USRE28905E (en) Field effect transistor memory cell
EP0031009B1 (en) Multiple access memory cell and its use in a memory array
US3231763A (en) Bistable memory element
US4456979A (en) Static semiconductor memory device
JPH0315279B2 (enrdf_load_stackoverflow)
JPH0574158B2 (enrdf_load_stackoverflow)
US4432076A (en) Bipolar static semiconductor memory device with a high cell holding margin
JPS5824876B2 (ja) メモリ
EP0090591B1 (en) Semiconductor memory device
US3284640A (en) Memory addressing register comprising bistable circuit with current steering means having disabling means
JP3022567B2 (ja) 半導体記憶装置
JP2792256B2 (ja) 半導体メモリ
JPS6235191B2 (enrdf_load_stackoverflow)
JPH0752587B2 (ja) ワードラインドライバ回路
US5304857A (en) Pulse generating circuit for semiconductor device
JP2878036B2 (ja) 半導体記憶装置