JPH03152448A - X-ray analyzer - Google Patents

X-ray analyzer

Info

Publication number
JPH03152448A
JPH03152448A JP1291881A JP29188189A JPH03152448A JP H03152448 A JPH03152448 A JP H03152448A JP 1291881 A JP1291881 A JP 1291881A JP 29188189 A JP29188189 A JP 29188189A JP H03152448 A JPH03152448 A JP H03152448A
Authority
JP
Japan
Prior art keywords
sample
electron beam
stage
ray
ray detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1291881A
Other languages
Japanese (ja)
Inventor
Yoshinori Hosokawa
細川 好則
Kenichi Ohori
謙一 大堀
Shigetoshi Arai
重俊 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Horiba Ltd
Original Assignee
Horiba Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Horiba Ltd filed Critical Horiba Ltd
Priority to JP1291881A priority Critical patent/JPH03152448A/en
Publication of JPH03152448A publication Critical patent/JPH03152448A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable three-dimensional measurement of an external shape or an internal structure in a minute structure by providing a sample stage in a high vacuum chamber so that it can be displaced in the three-dimensional direction, by setting a sample thereon and by applying a fine-bundle electron beam to the sample. CONSTITUTION:A sample stage 2 which can be displaced in the three-dimensional direction is provided inside a high vacuum chamber 1 made of iron, for instance. A sample (e.g. LSI) S is set, as it is, on the upper surface of the stage 2. When an electron beam is emitted from an electron beam generating element 3, it is turned to be a fine-bundle electron beam SB by the operations of a condenser lens 4, and electron beam scanning element 5 and an objective lens 6 and applied to the sample S. A transmitted X-ray PX transmitted through the sample S, out of X-rays generated when the electron beam SB strikes on the samples S, falls on the detecting surface of an X-ray detector (e.g. a semiconductor X-ray detector, three units of which are provided below the stage 2 with appropriate spacing therefrom) 9. by displacing the stage 2 three-dimensionally on the occasion, the X-ray PX passes through each part of the sample S, and therefore the external shape or the internal structure of the sample S can be measured three-dimensionally.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、X線分析装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an X-ray analysis device.

〔従来の技術〕[Conventional technology]

例えばLSIなどのマイクロデバイスの微細構造におけ
る外形や内部構造を三次元的に測定するのに、従来は、
例えばミクロトームなどの装置を用いてマイクロデバイ
スの所定箇所を切取って薄片試料を作成し、この薄片試
料を透過型または走査型電子顕微鏡を用いて観測してい
た。
For example, in order to three-dimensionally measure the external shape and internal structure of microdevices such as LSI, conventional methods
For example, a predetermined portion of a microdevice is cut out using a device such as a microtome to prepare a thin sample, and this thin sample is observed using a transmission or scanning electron microscope.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、上記従来技術は薄片試料が採取されたマ
イクロデバイスは再びその本来の目的のために使用する
ことはできない所謂破壊方法であり、また、何らかの前
処理が必要であるなど試料作成に手間を要するものであ
った。
However, the above-mentioned conventional technology is a so-called destructive method in which the microdevice from which the thin sample was collected cannot be used again for its original purpose, and also requires some pretreatment, which requires time and effort to prepare the sample. It was something.

本発明は、上述の事柄に留意してなされたもので、その
目的とするところは、LSIなどのマイクロデバイスを
破壊したり、煩わしい前処理を要することなく、その微
細な微細構造における外形や内部構造を三次元的に測定
することができるX線分析装置を提供することにある。
The present invention has been made with the above-mentioned considerations in mind, and its purpose is to improve the external shape and internal structure of microdevices such as LSI without destroying them or requiring troublesome pretreatment. An object of the present invention is to provide an X-ray analysis device that can three-dimensionally measure a structure.

[課題を解決するための手段〕 上述の目的を達成するため、本願では次の2つの手段を
採用している。
[Means for solving the problem] In order to achieve the above-mentioned purpose, the following two means are adopted in this application.

第1の発明に係るX線分析装置は、高真空のチャンバー
内に試料ステージを三次元方向に変位自在に設け、この
試料ステージ上に載置された試料に対して細束電子線を
照射し、このとき発生するX線のうち、前記試料を透過
したX線をX線検出器によって検出するようにした点に
特徴がある。
The X-ray analysis device according to the first invention includes a sample stage disposed in a high-vacuum chamber so as to be freely displaceable in three dimensions, and a fine beam of electrons irradiated onto the sample placed on the sample stage. Among the X-rays generated at this time, the X-ray detector is characterized in that the X-rays that have passed through the sample are detected by an X-ray detector.

また、第2の発明に係るX線分析装置は、高真空のチャ
ンバー内に試料ステージを三次元方向に変位自在に設け
、この試料ステージ上に載置された試料に対して薄膜タ
ーゲットを介して細束電子線を照射し、この細束電子線
が前記″gI膜ターゲットに衝突するとき発生するX線
のうち前記試料を透過したX線をX線検出器によって検
出するようにした点に特徴がある。
Furthermore, the X-ray analysis apparatus according to the second invention includes a sample stage disposed in a high vacuum chamber so as to be freely displaceable in three-dimensional directions, and a sample placed on the sample stage is The method is characterized in that an X-ray detector detects the X-rays that have passed through the sample among the X-rays generated when a fine-flux electron beam is irradiated and the fine-flux electron beam collides with the gI film target. There is.

〔作用) 上記何れの発明においても、試料を透過したX線をX線
検出器によって検出するようにしているので、試料を非
破壊で観察することができ、また、煩わしい前処理が不
要である。
[Function] In any of the above inventions, the X-rays that have passed through the sample are detected by the X-ray detector, so the sample can be observed non-destructively, and troublesome pretreatment is not required. .

〔実施例〕〔Example〕

以下、本発明の実施例を図面を参照しながら説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本願の第1の発明に係るX線分析装置の構成を
概略的に示し、この図において、lは例えば鉄製のチャ
ンバーで、図外のポンプによって内部が所定の高真空に
なるようにしである。2はチャンバー1の内部に設けら
れる試料ステージで、例えばLSIなどの試料Sを載置
しこれを保持するもので、図外の駆動操作機構によって
三次元方向に変位自在、つまり、上下左右方向へ移動し
たり、試料載置面が斜め状態になったり、更に、それぞ
れの状態で回転できるようにしである。
FIG. 1 schematically shows the configuration of an X-ray analyzer according to the first invention of the present application. It's Nishide. Reference numeral 2 denotes a sample stage provided inside the chamber 1, on which a sample S such as an LSI is placed and held, and is movable in three dimensions by a drive operation mechanism (not shown), that is, vertically and horizontally. It is designed so that it can be moved, the sample mounting surface can be tilted, and it can also be rotated in each state.

前記チャンバー1の内部上方には、上方から順に、フィ
ラメントなどからなり電子線を発する電子線発生部3、
コンデンサレンズ4、電子線をXY力方向走査する電子
線走査部5、対物レンズ6などが設けられており、電子
線発生部3を発した電子線は前記各部材4〜6によって
例えば直径が1μm以下の細束電子線5Bとなって試料
S方向に向かうようにしである。
Inside the chamber 1, in order from the top, there are an electron beam generating section 3 that is made of a filament or the like and emits an electron beam;
A condenser lens 4, an electron beam scanning section 5 for scanning the electron beam in the XY force direction, an objective lens 6, etc. are provided, and the electron beam emitted from the electron beam generating section 3 is reduced to a diameter of, for example, 1 μm by the members 4 to 6. The electron beam becomes the following fine flux electron beam 5B and is directed toward the sample S.

7はチャンバー1の側部に設けられた二次電子検出器で
、前記細束電子線SRの試料S表面への照射によって試
料S表面から発せられる二次電子線を検出し、二次電子
像を得るものである。8は試料S観測用のモニターであ
る。
7 is a secondary electron detector provided on the side of the chamber 1, which detects the secondary electron beam emitted from the surface of the sample S by irradiating the surface of the sample S with the narrow electron beam SR, and generates a secondary electron image. This is what you get. 8 is a monitor for observing sample S.

ここまでの構成は一般的な走査型電子顕微鏡と変わると
ころがない。
The configuration up to this point is no different from a general scanning electron microscope.

9は例えば半導体X線検出器などのX線検出器で、試料
Sに照射された細束電子線SRが試料Sに衝突するとき
発生する特性XvAおよび連続X線のうち、試料Sを透
過したX線(以下、透過XvAと云う)PXを検出する
もので、図示例ではチャンバー1の内部下方、より詳し
くは試料Sを載置する試料ステージ2よりも下方に適宜
の間隔をおいて3台設けられている。これらのX線検出
器9からは透過x gpxの強度を表す信号が出力され
るが、この信号は図外の信号処理装置において処理され
るようにしである。
9 is an X-ray detector, for example, a semiconductor It detects X-rays (hereinafter referred to as transmitted XvA) PX, and in the illustrated example, three units are installed at appropriate intervals below the inside of the chamber 1, more specifically below the sample stage 2 on which the sample S is placed. It is provided. These X-ray detectors 9 output signals representing the intensity of transmitted xgpx, and these signals are processed by a signal processing device not shown.

而して、上記構成のX線分析装置によって、例えばLS
Iの微細構造における外形や内部構造を三次元的に測定
する場合、先ず、LSIをそのままの状態、つまり、薄
片試料の状態にすることなく試料Sとして試料ステージ
2の上面に載置する。
Therefore, the X-ray analyzer with the above configuration allows, for example, LS
When three-dimensionally measuring the external shape and internal structure of the fine structure of I, first, the LSI is placed on the upper surface of the sample stage 2 as a sample S without being made into a thin sample.

次いで、その状態で電子線発生部3から電子線を発する
と、この電子線はコンデンサレンズ4、電子線走査部5
、対物レンズ6などの働きにより、所定の細束電子線S
Bとなって試料Sに照射される。
Next, when an electron beam is emitted from the electron beam generating section 3 in this state, this electron beam passes through the condenser lens 4 and the electron beam scanning section 5.
, by the function of the objective lens 6, etc., a predetermined finely focused electron beam S
B and irradiates the sample S.

前記細束電子線SBが試料Sに衝突するとき発生する特
性X線および連続xflのうち、試料Sを透過した透過
X線PχがX線検出器9の検出面に入射する。この場合
、試料ステージ2の姿勢を変えたりして三次元的に変位
させることにより、試料Sの各部を透過X線PKが通過
するので、試料Sの微細構造における外形や内部構造を
三次元的に測定することができる。
Of the characteristic X-rays and continuous xfl generated when the narrow electron beam SB collides with the sample S, the transmitted X-rays Pχ that have passed through the sample S are incident on the detection surface of the X-ray detector 9. In this case, by changing the posture of the sample stage 2 and displacing it three-dimensionally, the transmitted X-rays PK pass through each part of the sample S. can be measured.

第2図は本願の第2の発明に係るX線分析装置の構成を
概略的に示し、この図において、第1図における符号と
同一の符号は同一物または相当物を示す。
FIG. 2 schematically shows the configuration of an X-ray analyzer according to the second invention of the present application, and in this figure, the same symbols as those in FIG. 1 indicate the same or equivalent components.

この図において、10は試料Sの細束電子線SB入力側
の近傍に設けられる薄膜ターゲットで、例えば厚さ数μ
m程度のMo(モリブデン)、Rh(ロジウム)、Cr
(クローム)などの金属よりなる。
In this figure, 10 is a thin film target provided near the input side of the fine beam electron beam SB of the sample S, and has a thickness of, for example, several micrometers.
m of Mo (molybdenum), Rh (rhodium), Cr
Made of metal such as (chrome).

この実施例においては、電子線発生部3からの細束電子
線SBを試料Sに直接照射させるのではなく、これを薄
II焚ターゲッ)10に当ててそのとき発生する特性X
線および連続xgcxを試料Sに照射し、この特性X線
および連続xfIcxのうち、試料Sを透過した透過x
f!pxがX線検出器9の検出面に入射する。
In this embodiment, instead of directly irradiating the sample S with the fine flux electron beam SB from the electron beam generator 3, the sample S is irradiated with the thin II firing target 10, and the characteristic X generated at that time is
rays and continuous xgcx are irradiated onto the sample S, and among the characteristic X-rays and continuous xfIcx, the transmitted x that has passed through the sample S
f! px enters the detection surface of the X-ray detector 9.

この実施例においても、上述の実施例と同様に試料Sの
微細構造における外形や内部構造を三次元的に測定する
ことができる。
In this embodiment as well, the external shape and internal structure of the fine structure of the sample S can be measured three-dimensionally as in the above-mentioned embodiments.

上述の各実施例では、走査型電子顕微鏡にX線検出器9
を設けていたが、透過型電子顕微鏡にX線検出器9を設
けてもよい。そして、X線検出器9は必ずしも複数設け
る必要がなく、1個だけ設けてもよく、更に、その場合
、検出器9の位置を変位できるようにしてあってもよい
In each of the embodiments described above, the scanning electron microscope includes an X-ray detector 9.
However, the transmission electron microscope may be provided with an X-ray detector 9. It is not necessarily necessary to provide a plurality of X-ray detectors 9; only one X-ray detector 9 may be provided; furthermore, in that case, the position of the detector 9 may be movable.

また、第2図に示す実施例においては、X線検出器9と
してシンチレーションカウンタを用いることもできる。
Furthermore, in the embodiment shown in FIG. 2, a scintillation counter can also be used as the X-ray detector 9.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明においては、試料を透過し
た透過X線をX線検出器によって検出するようにしてい
るので、試料をその微細な微細構造における外形や内部
構造を三次元的に測定することができる。そして、本発
明によれば、試料を破壊したりしないでそのままの状態
で、また、煩わしい前処理を施すことなく所定の測定を
行うことができるので、特に、LSIなどのマイクロデ
バイスの三次元構造を測定するのに有用である。
As explained above, in the present invention, the X-ray detector detects the transmitted X-rays that have passed through the sample, so the external shape and internal structure of the sample can be measured three-dimensionally. can do. According to the present invention, it is possible to carry out predetermined measurements without destroying the sample and without any troublesome pre-treatment. useful for measuring

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本願の第1の発明に係るX線分析装置の構成を
概略的に示す図、第2図は本願の第2の発明に係るX線
分析装置の構成を概略的に示す図である。 1・・・チャンバー、2・・・試料ステージ、9・・・
X線検出器、10・・・薄膜ターゲット、S・・・試料
、SR・・・細束電子線、PX・・・試料を透過したX
線。 第2図
FIG. 1 is a diagram schematically showing the configuration of an X-ray analyzer according to the first invention of the present application, and FIG. 2 is a diagram schematically showing the configuration of the X-ray analyzer according to the second invention of the present application. be. 1...Chamber, 2...Sample stage, 9...
X-ray detector, 10... thin film target, S... sample, SR... narrow electron beam, PX... X transmitted through the sample
line. Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)高真空のチャンバー内に試料ステージを三次元方
向に変位自在に設け、この試料ステージ上に載置された
試料に対して細束電子線を照射し、このとき発生するX
線のうち、前記試料を透過したX線をX線検出器によっ
て検出するようにしたことを特徴とするX線分析装置。
(1) A sample stage is installed in a high vacuum chamber so that it can be moved in three dimensions, and the sample placed on the sample stage is irradiated with a fine beam of electrons.
An X-ray analysis apparatus characterized in that, of the X-rays, X-rays that have passed through the sample are detected by an X-ray detector.
(2)高真空のチャンバー内に試料ステージを三次元方
向に変位自在に設け、この試料ステージ上に載置された
試料に対して薄膜ターゲットを介して細束電子線を照射
し、この細束電子線が前記薄膜ターゲットに衝突すると
き発生するX線のうち前記試料を透過したX線をX線検
出器によって検出するようにしたことを特徴とするX線
分析装置。
(2) A sample stage is installed in a high-vacuum chamber so that it can be freely displaced in three dimensions, and the sample placed on the sample stage is irradiated with a fine beam of electrons through a thin film target. An X-ray analysis apparatus characterized in that, of the X-rays generated when an electron beam collides with the thin film target, X-rays that have passed through the sample are detected by an X-ray detector.
JP1291881A 1989-11-09 1989-11-09 X-ray analyzer Pending JPH03152448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1291881A JPH03152448A (en) 1989-11-09 1989-11-09 X-ray analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1291881A JPH03152448A (en) 1989-11-09 1989-11-09 X-ray analyzer

Publications (1)

Publication Number Publication Date
JPH03152448A true JPH03152448A (en) 1991-06-28

Family

ID=17774651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1291881A Pending JPH03152448A (en) 1989-11-09 1989-11-09 X-ray analyzer

Country Status (1)

Country Link
JP (1) JPH03152448A (en)

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