JPH03150822A - Aluminum electrode for electrolytic capacitor - Google Patents
Aluminum electrode for electrolytic capacitorInfo
- Publication number
- JPH03150822A JPH03150822A JP28955389A JP28955389A JPH03150822A JP H03150822 A JPH03150822 A JP H03150822A JP 28955389 A JP28955389 A JP 28955389A JP 28955389 A JP28955389 A JP 28955389A JP H03150822 A JPH03150822 A JP H03150822A
- Authority
- JP
- Japan
- Prior art keywords
- electrolytic capacitor
- electrode
- aluminum
- niobium
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 30
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 abstract description 15
- 239000010408 film Substances 0.000 abstract description 13
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052758 niobium Inorganic materials 0.000 abstract description 7
- 239000010955 niobium Substances 0.000 abstract description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract description 7
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 230000002269 spontaneous effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000036571 hydration Effects 0.000 description 3
- 238000006703 hydration reaction Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000010405 anode material Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
この発明は電解コンデンサに用いられるアルミニウム電
極であって、特に陰極に用いられるアルミニウム電極に
関する。The present invention relates to an aluminum electrode used in an electrolytic capacitor, and particularly to an aluminum electrode used as a cathode.
電解コンデンサは、小型、大容量、安価で整流出力の平
滑用などの用途に優れた特性を示し、各種の電気・電子
機器の重要な構成要素の一つである。
電解コンデンサは、−ｉにアルミニウム等の絶縁性酸化
皮膜が形成され得る、いわゆる弁金属を陽極に用い、前
記絶縁性酸化皮膜を誘電体層として、集電用の陰極電極
との間にセパレータに保持された電解液を介在させてコ
ンデンサ素子を作成し、これを密閉容器内に収納して構
成される。
陽極材料は前述したように、アルミニウムをはじめ、タ
ンタル、ニオブ、チタンなどが使用される。また集電の
ための陰極電極材料には、陽極材料と同種の金属が用い
られる。
ところが、弁金属は一般に自然酸化による酸化皮膜層が
表面に形成される。この傾向はアルミニウムにおいて特
に顕著である。そしてこの自然酸化皮膜は極めて薄い絶
縁層のため、陰極側にも静電容量が形成され、電解コン
デンサは、陽極側の静電容量および陰極側の静電容量が
直列に接続された合成容量となり、所望の静電容量が得
られなくなる。また所望の静電容量を得るため、陽極側
の静電容量を必要以上に大きくする必要がある。
この影響を少なくするためには、陽極側の静電容量値に
比べ陰極側の静電容量値を著しく高くすれば、陰極側の
静電容量による影響は殆ど無視できることになるが、低
電圧用の電解コンデンサの陽極の単位面積あたりの静電
容量は相当に高いフ１準にあり、これをより高めるのは
困難で、合成で量による静電容量値の低下は免れ得ない
。
そこで陰極側の静電容量値をより高くするたνに、陰極
電極表面をエツチング処理して表面積づ拡大する方法が
ある。しかしこの表面積を拡大する技術は、現在では高
度に洗練されているが、この技術のみによって電解コン
デンサの静電容ｆｆ１（飛躍的に増加させるのは次第に
困難になりつつ凌る。
むしろ陰極との合成容量による静電容量の低１の問題の
解決のためには、陰極の表面部に絶縁１１の酸化皮膜を
形成しない導電性の金属からなる薄膜で被覆することに
よって、合成容量による静電容量値の低下を防止するこ
とが考えられる。
このようなものとして、例えば特開昭６Ｏ−１８２Ｅ号
公報のように、各種の導電性金属を真空蒸着するものが
知られている。また薄膜を形成するためには、前記の真
空蒸着によるもののほか、イオンブレーティング法、ス
パッタリング法あるいはプラズマＣＶＤ法などのような
各種の物理的方法がある。
しかしながら、導電性金属のうち、金、白金などのいわ
ゆる貴金属については、薬品との反応が殆どなく、電解
コンデンサとして長期間使用しても良好な導電性を保ち
得る。しかしながらこの種の貴金属は、安価で多量の生
産が要求される電解コンデンサには、経済的理由から採
用されるに到起き、表面の状態が経時変化するために、
腐食事故の発生や、電解コンデンサの特性が安定しない
という欠点があった。Electrolytic capacitors are small, large-capacitance, inexpensive, and have excellent characteristics for applications such as smoothing rectified output, and are one of the important components of various electrical and electronic devices. An electrolytic capacitor uses a so-called valve metal on which an insulating oxide film such as aluminum can be formed as an anode, and a separator is used between the insulating oxide film as a dielectric layer and a cathode electrode for current collection. A capacitor element is created by interposing the retained electrolyte, and the capacitor element is housed in a sealed container. As mentioned above, the anode materials used include aluminum, tantalum, niobium, and titanium. Further, the same type of metal as the anode material is used for the cathode electrode material for current collection. However, valve metals generally have an oxide film layer formed on their surfaces due to natural oxidation. This tendency is particularly noticeable in aluminum. Since this natural oxide film is an extremely thin insulating layer, capacitance is also formed on the cathode side, and an electrolytic capacitor is a composite capacitance in which the capacitance on the anode side and the capacitance on the cathode side are connected in series. , the desired capacitance cannot be obtained. Furthermore, in order to obtain the desired capacitance, it is necessary to make the capacitance on the anode side larger than necessary. In order to reduce this effect, if the capacitance value on the cathode side is made significantly higher than the capacitance value on the anode side, the effect of the capacitance on the cathode side can be almost ignored. The capacitance per unit area of the anode of an electrolytic capacitor is at a fairly high standard, and it is difficult to increase it further, and it is inevitable that the capacitance value will decrease depending on the amount of synthesis. Therefore, in order to increase the capacitance value on the cathode side, there is a method of enlarging the surface area by etching the surface of the cathode electrode. However, although the technology for expanding this surface area is now highly sophisticated, it is becoming increasingly difficult to dramatically increase the capacitance ff1 of an electrolytic capacitor using only this technology. In order to solve the problem of low capacitance due to capacitance, it is possible to reduce the capacitance value due to the composite capacitance by coating the surface of the cathode with a thin film made of a conductive metal that does not form an oxide film of insulation 11. As such, there are known methods such as those disclosed in Japanese Unexamined Patent Publication No. Sho 6O-182E, in which various conductive metals are vacuum-deposited. In addition to the vacuum evaporation method described above, there are various physical methods such as ion blasting, sputtering, and plasma CVD.However, among conductive metals, so-called noble metals such as gold and platinum This type of precious metal has almost no reaction with chemicals and can maintain good conductivity even when used as an electrolytic capacitor for a long time.However, this type of precious metal is not economical for electrolytic capacitors that are required to be produced in large quantities at low cost. Due to the fact that the surface condition changes over time,
The disadvantages were that corrosion accidents occurred and the characteristics of the electrolytic capacitor were unstable.
この発明は、窒化ニオブがこの発明の目的に適合した薄
膜を形成することに着目したもので、この発明の電解コ
ンデンサ用電極は、高純度アルミニウム表面に、窒化ニ
オブ層を形成したことを特徴としている。
すなわちこの発明は、ニオブの窒化物の薄膜によりアル
ミニウム電極表面を被覆することによりこの発明の目的
を達成している。
この発明によれば、被処理材料としては、通常の電解コ
ンデンサの陰極に用いる高純度で箔状あるいは板状のア
ルミニウムを用いることができる。
このアルミニウム表面は、あらかじめ脱脂処理等にをよ
り表面を清浄化しておく。またアルミニウム表面はエツ
チング処理を施しても良いし、プレーンのままであって
も使用可能である。ただエツチングの際はエツチングに
よる凹凸の細かさの範囲を窒化ニオブ層を形成する手段
によって選択する必要がある場合がある。
形成される窒化ニオブ層の厚さは、少なくともアルミニ
ウム表面を均一に覆われる必要がある。
また厚さが必要以上になると、被覆処理に時間がかかる
ことなどから、好ましくは０．０２ないし５μｍ、より
好ましくは０．１ないし２μｍである。
窒化ニオブ薄膜を形成するための手段としては、各種の
手段が適用可能であるが、一般には薄膜ゆえ、厚さや状
態の制御が容易な物理的手段によるドライプロセスによ
るのが好適である。このような手段としては、真空蒸着
、陰極アーク蒸着、スパッタリング、イオンブレーティ
ング、プラズマＣＶＤ法などが例示できる。This invention focuses on the fact that niobium nitride forms a thin film suitable for the purpose of this invention, and the electrode for an electrolytic capacitor of this invention is characterized by forming a niobium nitride layer on the surface of high-purity aluminum. There is. That is, the object of the present invention is achieved by coating the surface of an aluminum electrode with a thin film of niobium nitride. According to the present invention, as the material to be treated, high-purity foil-like or plate-like aluminum, which is used for the cathode of an ordinary electrolytic capacitor, can be used. This aluminum surface is cleaned in advance by degreasing or the like. Further, the aluminum surface may be etched or left plain. However, during etching, it may be necessary to select the range of fineness of the unevenness caused by etching depending on the means for forming the niobium nitride layer. The thickness of the niobium nitride layer formed must be such that at least the aluminum surface is uniformly covered. Moreover, if the thickness is more than necessary, the coating process will take time, so the thickness is preferably 0.02 to 5 μm, more preferably 0.1 to 2 μm. Various methods can be used to form the niobium nitride thin film, but since it is a thin film, it is generally preferable to use a dry process using physical means that allows easy control of thickness and condition. Examples of such means include vacuum evaporation, cathodic arc evaporation, sputtering, ion blasting, and plasma CVD.
窒化ニオブは、比抵抗値がおよそ２００μΩ・ｃｍと低
い抵抗値を有する硬質な化合物で、アルミニウムとの反
応性も良好なことから、アルミニウム表面に低比抵抗の
緻密な薄膜が形成される。
この結果、アルミニウム電極は表面に形成された高容量
の極めて薄い自然酸化皮膜か、あるいは特定の微小部分
については自然酸化皮膜が殆ど形成されない電導度の高
い金属アルミニウム表面がそのまま、窒化ニオブによっ
て安定して保護されることになり、電極全体として高い
静電容量値が得られるものと思われる。
また窒化ニオブは、電解液との反応が起きにくく、電極
の表面状態を長期にわたって安定して維持させる。Niobium nitride is a hard compound with a low resistivity of about 200 μΩ·cm and has good reactivity with aluminum, so a dense thin film with low resistivity is formed on the aluminum surface. As a result, the aluminum electrode has an extremely thin natural oxide film with high capacity formed on its surface, or in certain minute areas, the highly conductive metal aluminum surface with almost no natural oxide film is stabilized by niobium nitride. It is thought that the electrode will be protected by a high capacitance value as a whole. In addition, niobium nitride is less likely to react with the electrolyte and maintains the surface condition of the electrode stably over a long period of time.
以下実施例に基づいて、この発明を更に詳細に説明する
。
この発明の窒化ニオブ薄膜を表面に形成した高純度アル
ミニウム被処理材を以下の実施例１および２のごとく作
成した。また比較例として、窒化物でない金属ニオブ層
を形成したもの、従来から用いられている高純度アルミ
ニウム表面をエツチング処理のみ行ったものを比較例１
ないし３とした。
＋１−
高純度のアルミニウム箔（純度９９．９５％、厚さｌＯ
ｌｏｏｕを５０１Ｍ＋Ｘ １００＋ａｍに切断したもの
を被処理材として使用し、窒素ガスを含む全圧が５Ｘ１
０−’Ｔｏｒｒのチャンバ中で、陰極アーク蒸着法を用
いて蒸着を行った。蒸着条件は、被処理材を２００°Ｃ
に加熱し、アーク放電電圧１００Ｖ、アーク電流１００
Ａで蒸着速度を０．０５μｍ／分で４分間蒸着を行った
。
この結果表面に、膜厚０．２μｍの窒化ニオブ層が形成
された。
一裏施班Ｉ−
実施例Ｉと同じ高純度アルミニウムに、イオンブレーテ
ィング法によって、窒化ニオブ薄膜を形成した。
形成条件は、チャンバ中の窒素ガスを含む全圧が、ｌ
Ｘ １０− ”Ｔｏｒｒの雰囲気で、被処理材と蒸着源
であるニオブ電極間に１２００Ｖを印加して２０分間イ
オンブレーティングを行った。
この結果、表面に、膜ｆｆ ０．２μｍの窒化ニオブ層
が形成された。
一且藍拠上一
被処理材には実施例と同じものを用い、これを常温状態
で、２ Ｘ １Ｏ−３Ｔｏｒｒのアルゴンガス雰囲気の
チャンバ中で実施例１と同じ陰極アーク蒸着法によって
金属ニオブ薄膜を形成した。蒸着条件は、アーク放電電
圧１００■、アーク電流１００Ａで蒸着温度を０．０２
μｍ／分で１０分間蒸着を行った。
この結果、膜厚０．２μｍの金属ニオブ蒸着膜が形成さ
れた。
一止較班Ｉ−
実施例２と同じイオンブレーティング法によって金属ニ
オブの薄膜を形成した。
被処理材は、実施例１と同じものを用いた。薄膜形成条
件は、２ Ｘ １０− ”Ｔｏｒｒのアルゴンガス雰囲
気中で、被処理材、蒸発源間に１２００ Ｖの電圧を印
加して２０分間蒸着を行った。
この結果、膜圧０．２μｍの金属ニオブ膜が形成された
。
一上Ｊ■［Ｌ−
実施例と同じ素材からなる高純度アルミニウム材表面を
交流電解法によってエツチング処理したものをＹ＄備し
た。
これら、各実施例および比較例の被処理材について、各
々の単位面積あたりの静電容量値を測定したところ、第
１表に示す結果が得られた。
（第 １ 表）
この結果から明らかなように、この発明の実施例のもの
は、比較のものに比べていずれも単位面積あたりの静電
容量値が高いことがわかる。
次に、形成された薄膜の安定性を調べるために、これら
各被処理材を電解コンデンサの陰極に用いて電解コンデ
ンサを作成し、寿命試験を行って特性の変化を調べた。
作成した電解コンデンサは、リード線同一方向型の電解
コンデンサで、箔状の電極をセパレータと共に巻回した
素子に電解液を含浸し、金属ケース内に収納し、開口部
を封口ゴムで密閉したちのである。電解コンデンサを構
成する材料は、陰極箔として上記の各実施例ならびに比
較例のものを用いた以外は全て共通のものを使用した。
また組立方法についても全て同じである。
電解コンデンサの定格電圧は６．３■、定格容量が４７
μＦ、外形寸法が直径５ ｍｍ、長さ７ ｍｍである使
用した電解液の組成は、エチシングリコ−シフ８重景％
、アジピン酸アンモニウム１０重量％、水１２重重量の
組成からなるもので、通常用いられる電解液に比べて、
水の含有■を多くしである。これは、水による電極箔の
水和劣化の発生が顕著になるようにしたためである。
この電解コンデンサに定格電圧を印加し、１１０°Ｃで
５００時間の寿命試験を行った後の静電容量値と、初期
の静電容量値との変化率を調べた。この結果を第２表に
示す。
（第
表）
この結果かられかるように、この発明のアルミニウム電
極を用いた電解コンデンサは、初期値においても、高い
静電容量値が得られるとともに、高温負荷寿命試験を行
った後も、電極表面に水和劣化等の特性劣化が生じない
ので、電気特性に変動が少なく、長期にわたって安定し
た特性が維持できることがわかる。The present invention will be described in more detail below based on Examples. High purity aluminum treated materials having the niobium nitride thin film of the present invention formed on their surfaces were prepared as in Examples 1 and 2 below. In addition, as comparative examples, Comparative Example 1 is one in which a metal niobium layer other than nitride is formed, and one in which only etching treatment is performed on the conventionally used high-purity aluminum surface.
It was set as 3 to 3. +1- High purity aluminum foil (purity 99.95%, thickness lO
louou cut into 501M+X 100+am is used as the material to be treated, and the total pressure including nitrogen gas is 5X1.
Deposition was performed using cathodic arc deposition in a chamber at 0-'Torr. The vapor deposition conditions were to heat the material to be treated at 200°C.
The arc discharge voltage is 100V and the arc current is 100V.
In A, vapor deposition was performed for 4 minutes at a vapor deposition rate of 0.05 μm/min. As a result, a 0.2 μm thick niobium nitride layer was formed on the surface. First side application I--A niobium nitride thin film was formed on the same high-purity aluminum as in Example I by the ion blasting method. The formation conditions are such that the total pressure including nitrogen gas in the chamber is l
In an atmosphere of The same material as in Example 1 was used as the material to be treated, and it was subjected to the same cathode arc as in Example 1 in a chamber with an argon gas atmosphere of 2 x 10-3 Torr at room temperature. A metallic niobium thin film was formed by a vapor deposition method.The vapor deposition conditions were an arc discharge voltage of 100 cm, an arc current of 100 A, and a vapor deposition temperature of 0.02
Deposition was carried out for 10 minutes at μm/min. As a result, a metal niobium vapor deposited film with a film thickness of 0.2 μm was formed. One-Stop Comparison Group I--A thin film of metallic niobium was formed by the same ion blating method as in Example 2. The same material as in Example 1 was used as the material to be treated. The thin film formation conditions were as follows: In an argon gas atmosphere of 2 x 10-'' Torr, a voltage of 1200 V was applied between the material to be treated and the evaporation source for 20 minutes. As a result, the film thickness was 0.2 μm. A metallic niobium film was formed. Y$ was prepared by etching the surface of a high-purity aluminum material made of the same material as in the example using an alternating current electrolytic method.These examples and comparative examples When the capacitance value per unit area of each of the treated materials was measured, the results shown in Table 1 were obtained. (Table 1) As is clear from the results, Examples of the present invention It can be seen that the capacitance values per unit area are higher than those for comparison.Next, in order to investigate the stability of the formed thin film, each of these treated materials was placed in an electrolytic capacitor. An electrolytic capacitor was created using this as a cathode, and a life test was conducted to examine changes in characteristics.The created electrolytic capacitor has lead wires in the same direction. The capacitor was impregnated with an electrolytic solution, housed in a metal case, and the opening was sealed with sealing rubber.The materials constituting the electrolytic capacitor were those used in each of the above embodiments and comparative examples as the cathode foil. The same thing was used for all.The assembly method was also the same for all.The rated voltage of the electrolytic capacitor is 6.3■, and the rated capacity is 47.
μF, external dimensions are 5 mm in diameter and 7 mm in length. The composition of the electrolyte used is Ethysin Glyco-Schiff 8%
, consisting of 10% by weight of ammonium adipate and 12% by weight of water, compared to commonly used electrolytes.
The water content is increased. This is to make the occurrence of hydration deterioration of the electrode foil due to water more noticeable. A rated voltage was applied to this electrolytic capacitor, and a life test was conducted at 110° C. for 500 hours, and the capacitance value and the rate of change between the initial capacitance value and the capacitance value were examined. The results are shown in Table 2. (Table) As can be seen from the results, the electrolytic capacitor using the aluminum electrode of the present invention has a high capacitance value even at the initial value, and even after performing the high temperature load life test, the electrolytic capacitor using the aluminum electrode of the present invention has a high capacitance value. It can be seen that since no property deterioration such as hydration deterioration occurs on the surface, there is little variation in electrical properties and stable properties can be maintained over a long period of time.
以上述べたようにこの発明によれば、電解コンデンサ用
の電極として、単位面積あたりの静電容量を高めること
ができるので、特に低圧領域において小型大容量の電解
コンデンサが得られる。
また電極表面が窒化ニオブによって保護され、水和劣化
等の電極表面の劣化が防止されるので、長期にわたって
安定した特性が維持できる。As described above, according to the present invention, as an electrode for an electrolytic capacitor, the electrostatic capacitance per unit area can be increased, so that a small and large-capacity electrolytic capacitor can be obtained, especially in a low voltage region. In addition, the electrode surface is protected by niobium nitride and deterioration of the electrode surface such as hydration deterioration is prevented, so stable characteristics can be maintained over a long period of time.
Claims (1)
成したことを特徴とする電解コンデンサ用アルミニウム
電極。(1) An aluminum electrode for an electrolytic capacitor, characterized in that a niobium nitride layer is formed on the surface of high-purity aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28955389A JPH03150822A (en) | 1989-11-07 | 1989-11-07 | Aluminum electrode for electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28955389A JPH03150822A (en) | 1989-11-07 | 1989-11-07 | Aluminum electrode for electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03150822A true JPH03150822A (en) | 1991-06-27 |
Family
ID=17744728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28955389A Pending JPH03150822A (en) | 1989-11-07 | 1989-11-07 | Aluminum electrode for electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03150822A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998038660A1 (en) * | 1997-02-28 | 1998-09-03 | Showa Denko Kabushiki Kaisha | Capacitor |
| EP1184883A1 (en) * | 1999-03-29 | 2002-03-06 | Nippon Chemi-Con Corporation | Solid electrolytic capacitor and production method thereof |
| US6423110B1 (en) | 1999-12-08 | 2002-07-23 | Showa Denko K.K. | Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body |
| US6430026B1 (en) | 1999-06-09 | 2002-08-06 | Showa Denko K.K. | Electrode material for capacitors and capacitor using the same |
| US6529367B1 (en) | 1998-12-15 | 2003-03-04 | Showa Denko Kabushiki Kaisha | Niobium capacitor and method of manufacture thereof |
| US6540810B2 (en) | 2000-04-21 | 2003-04-01 | Showa Denko Kabushiki Kaisha | Niobium powder for capacitor, sintered body using the powder and capacitor using the same |
| US6660057B1 (en) | 1999-10-01 | 2003-12-09 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
| US6671164B2 (en) | 2000-04-24 | 2003-12-30 | Showa Denko Kabushiki Kaisha | Niobium powder, sintered body using the powder, and capacitor using the same |
-
1989
- 1989-11-07 JP JP28955389A patent/JPH03150822A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6347032B2 (en) | 1997-02-28 | 2002-02-12 | Showa Denko Kabushiki Kaisha | Capacitor |
| US7006343B2 (en) | 1997-02-28 | 2006-02-28 | Showa Denko Kabushiki Kaisha | Capacitor |
| WO1998038660A1 (en) * | 1997-02-28 | 1998-09-03 | Showa Denko Kabushiki Kaisha | Capacitor |
| US6452777B1 (en) | 1997-02-28 | 2002-09-17 | Showa Denko Kabushiki Kaisha | Capacitor |
| US6856500B2 (en) | 1997-02-28 | 2005-02-15 | Showa Denko Kabushiki Kaisha | Capacitor |
| US6661646B2 (en) | 1998-12-15 | 2003-12-09 | Showa Denko Kabushiki Kaisha | Niobium capacitor and method of manufacture thereof |
| US6529367B1 (en) | 1998-12-15 | 2003-03-04 | Showa Denko Kabushiki Kaisha | Niobium capacitor and method of manufacture thereof |
| EP1184883A1 (en) * | 1999-03-29 | 2002-03-06 | Nippon Chemi-Con Corporation | Solid electrolytic capacitor and production method thereof |
| EP1184883A4 (en) * | 1999-03-29 | 2004-09-08 | Nippon Chemicon | Solid electrolytic capacitor and production method thereof |
| US6430026B1 (en) | 1999-06-09 | 2002-08-06 | Showa Denko K.K. | Electrode material for capacitors and capacitor using the same |
| US6660057B1 (en) | 1999-10-01 | 2003-12-09 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
| US7011692B2 (en) | 1999-10-01 | 2006-03-14 | Showa Denko K.K. | Powder composition for capacitor, sintered body using the composition and capacitor using the sintered body |
| US6423110B1 (en) | 1999-12-08 | 2002-07-23 | Showa Denko K.K. | Powder composition for capacitor and sintered body using the composition, and capacitor using the sintered body |
| US6689185B2 (en) | 2000-04-21 | 2004-02-10 | Showa Denko Kabushiki Kaisha | Niobium powder for capacitor, sintered body using the powder and capacitor using the same |
| US6540810B2 (en) | 2000-04-21 | 2003-04-01 | Showa Denko Kabushiki Kaisha | Niobium powder for capacitor, sintered body using the powder and capacitor using the same |
| US7037355B2 (en) | 2000-04-21 | 2006-05-02 | Showa Denko Kabushiki Kaisha | Niobium powder for capacitor, sintered body using the powder and capacitor using the same |
| US6671164B2 (en) | 2000-04-24 | 2003-12-30 | Showa Denko Kabushiki Kaisha | Niobium powder, sintered body using the powder, and capacitor using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6764712B2 (en) | Method for producing high surface area foil electrodes | |
| JP2745875B2 (en) | Cathode materials for electrolytic capacitors | |
| JPH03150822A (en) | Aluminum electrode for electrolytic capacitor | |
| JP3016421B2 (en) | Aluminum cathode foil for electrolytic capacitors | |
| JP2864477B2 (en) | Aluminum electrode for electrolytic capacitors | |
| JPH059790A (en) | Production of base substance having metal oxide on surface | |
| US6865071B2 (en) | Electrolytic capacitors and method for making them | |
| US3126503A (en) | Electrical capacitor and electrode | |
| US3256468A (en) | Electrode for electrical capacitors and method of making the same | |
| Vratny | Deposition of Tantalum and Tantalum Oxide by Superimposed RF and D‐C Sputtering | |
| JPH0291918A (en) | Electrode material for electrolytic capacitor | |
| EP1382048A2 (en) | Electrolytic capacitors and method for making them | |
| JPH0471213A (en) | Aluminum electrode for electrolytic capacitor and its manufacture | |
| JP2618281B2 (en) | Aluminum electrode for electrolytic capacitor and method of manufacturing the same | |
| JPS6353688B2 (en) | ||
| JP2687299B2 (en) | Method for manufacturing aluminum electrode for electrolytic capacitor | |
| JPH03150824A (en) | Aluminum electrode for electrolytic capacitor | |
| JPH03150823A (en) | Aluminum electrode for electrolytic capacitor | |
| JPH042109A (en) | Aluminum electrode for electrolytic capacitor | |
| JPH03150821A (en) | Aluminum electrode for electrolytic capacitor | |
| JPH059710A (en) | Production of aluminum electrode for electrolytic capacitor | |
| JP2734233B2 (en) | Electrode materials for electrolytic capacitors | |
| JPH03150828A (en) | Manufacture of aluminum electrode for electrolytic capacitor | |
| JPH042110A (en) | Manufacture of aluminum electrode for electrolytic capacitor | |
| JPH03150829A (en) | Manufacture of aluminum electrode for electrolytic capacitor |