JPH03150711A - Magnetic head - Google Patents
Magnetic headInfo
- Publication number
- JPH03150711A JPH03150711A JP28952489A JP28952489A JPH03150711A JP H03150711 A JPH03150711 A JP H03150711A JP 28952489 A JP28952489 A JP 28952489A JP 28952489 A JP28952489 A JP 28952489A JP H03150711 A JPH03150711 A JP H03150711A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ferrite
- thickness
- gap
- flux density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 49
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 23
- 239000000956 alloy Substances 0.000 claims abstract description 23
- 229910000702 sendust Inorganic materials 0.000 claims abstract description 22
- 230000004907 flux Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 5
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 19
- 229910001337 iron nitride Inorganic materials 0.000 claims description 6
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910017086 Fe-M Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 75
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 7
- 230000002265 prevention Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＶＴＲ，ＤＡＴあるいはＦＤＤ等に用いられる
高保磁力の磁気記録媒体に高密度に情報を記録するのに
適したＭＩＧタイプの磁気ヘッドに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an MIG type magnetic head suitable for recording information at high density on a high coercive force magnetic recording medium used in a VTR, DAT, FDD, or the like.
従来の技術
高密度磁気記録再生のために、記録媒体はその保磁力を
大きくすれば、また磁気ヘッドの方はその飽和磁束密度
を大きくすれば良いことが一般に知られている。現在磁
気ヘッド材料として主流になっているフェライト材料は
その飽和磁束密度が５０００Ｇａｕｓｓ程度であり、１
００００ｅ以上の高保磁力を示すメタルテープに使用す
ると磁気飽和が起こり、記録が十分に行われない、そこ
でフェライト材料よりも飽和磁束密度の大きいセンダス
ト合金膜やＣｏ系アモルファス膜等を用いた磁気ヘッド
が実用化されつつある。そして磁気ヘッドの形としては
第２図に示すように主コアがフェライト２からなり、ギ
ャップ近傍のみが高飽和磁束密度材料の８Ｍ１からなる
ＭＩＧタイプのヘッドがある。このタイプのヘッドでは
高飽和磁束密度材料の薄膜たとえばセンダスト膜とフェ
ライトの境界において、反応が起こるためにこの部分か
ら疑似信号が発生するという問題点がある。（例えば、
日本応用磁気学会誌 第１１巻、第２号、１９８７年、
頁１０５〜１０８）
発明が解決しようとする課題
ＭＩＧヘッドにおいて、フェライトと高飽和磁束密度材
料膜との境界で磁気的に非常に劣化した層が存在する。2. Description of the Related Art It is generally known that for high-density magnetic recording and reproduction, the coercive force of the recording medium can be increased, and the saturation magnetic flux density of the magnetic head can be increased. Ferrite material, which is currently the mainstream material for magnetic heads, has a saturation magnetic flux density of about 5000 Gauss, and 1
When used with a metal tape that exhibits a high coercive force of 0000e or more, magnetic saturation occurs and recording cannot be performed sufficiently.Therefore, magnetic heads using sendust alloy films or Co-based amorphous films, etc., which have a higher saturation magnetic flux density than ferrite materials, are used. It is being put into practical use. As shown in FIG. 2, there is a magnetic head of the MIG type in which the main core is made of ferrite 2 and only the area near the gap is made of 8M1, a high saturation magnetic flux density material. This type of head has a problem in that a reaction occurs at the boundary between a thin film of high saturation magnetic flux density material, such as a sendust film, and ferrite, so that spurious signals are generated from this part. (for example,
Journal of the Japanese Society of Applied Magnetics, Volume 11, No. 2, 1987,
Pages 105-108) Problems to be Solved by the Invention In the MIG head, there is a magnetically extremely deteriorated layer at the boundary between the ferrite and the high saturation magnetic flux density material film.
この磁気劣化層には、磁気ヘッド製造工程のガラス融着
工程（熱処理）において、両者の境界での酸化還元反応
の結果体じるフェライトの酸素欠乏層、フェライトとメ
タル材料の反応層と、メタル膜の製膜工程（スパッタ等
）においての初期形成時の軟磁気特性劣化膜とが考えら
れている。This magnetic deterioration layer includes an oxygen-deficient layer of ferrite that is formed as a result of an oxidation-reduction reaction at the boundary between the two during the glass fusing process (heat treatment) in the manufacturing process of the magnetic head, a reaction layer of ferrite and metal material, and a reaction layer of ferrite and metal material. It is thought that the soft magnetic properties deteriorate during the initial formation in the film forming process (sputtering, etc.).
これらの磁気劣化層により、へンドから疑似信号が発生
する。このような疑似信号の発生は磁気ヘッドの特性に
致命的であり、この信号を抑えることが必要である。These magnetically degraded layers generate spurious signals from the head. The generation of such pseudo signals is fatal to the characteristics of the magnetic head, and it is necessary to suppress these signals.
課題を解決するための手段
高飽和磁束密度材料膜とフェライトとの境界にフェライ
ト側から両者の反応を防止する薄膜（以下、反応防止膜
）を、その次にＦｅ膜を形成する。Means for Solving the Problems A thin film (hereinafter referred to as a reaction prevention film) for preventing a reaction between the ferrite and the ferrite is formed at the boundary between the high saturation magnetic flux density material film and the ferrite, and then an Fe film is formed.
作用 この技術的手段の作用は次のようになる。action The effect of this technical means is as follows.
反応防止膜の形成により両者の境界で発生していたフェ
ライトの酸素欠乏層、フェライトとメタルの反応層の発
生を防ぐ０反応防止膜自身は非磁性であるが、膜厚が非
常に薄いために、はとんどギャップとしては働かない。The formation of a reaction prevention film prevents the formation of an oxygen-deficient layer of ferrite and a reaction layer between ferrite and metal that occur at the boundary between the two.Although the reaction prevention film itself is non-magnetic, it is extremely thin. , hardly works as a gap.
さらにＦｅ膜を形成することによりメタル膜の初期形成
膜の磁気特性を改善する。Furthermore, by forming the Fe film, the magnetic properties of the initially formed metal film are improved.
以上のことから両者の境界で発生していた疑似信号出力
を大幅に低減することが可能になる。From the above, it becomes possible to significantly reduce the pseudo signal output that occurs at the boundary between the two.
実施例
以下本発明の一実施例の磁気ヘッドについて図面を参照
しながら説明する。EXAMPLE Hereinafter, a magnetic head according to an example of the present invention will be described with reference to the drawings.
第１図は本発明に述べた磁気ヘッドの一例である。FIG. 1 shows an example of the magnetic head described in the present invention.
実施例１
ギャップ近傍にセンダスト合金薄膜ｌを用い、それ以外
の磁路はフェライト２を、また両者の境界にＩｒ膜４が
５０Å、Ｆｅ膜５が５０人形成されたＭＩＧタイプのヘ
ッドである。センダスト合金薄膜ｌの膜厚は１０μｍで
あり、３はガラス、６はギャップである。従来例では、
主信号に対して一１０ｄＢ （０，１３ＭＨｚ）あった
疑似信号出力が上記の構成により一３１ｄＢ （０，１
３μｍ）に減少した。Example 1 This is a MIG type head in which a sendust alloy thin film 1 is used near the gap, ferrite 2 is used for the other magnetic paths, and an Ir film 4 of 50 Å and 50 Fe films 5 are formed at the boundary between the two. The thickness of the sendust alloy thin film 1 is 10 μm, 3 is glass, and 6 is a gap. In the conventional example,
With the above configuration, the pseudo signal output which was -10 dB (0.13 MHz) with respect to the main signal has been reduced to -31 dB (0.1 MHz).
3 μm).
この場合、Ｉｒの代わりにＲｕ、Ｒｈ、Ｐｄ。In this case, Ru, Rh, Pd instead of Ir.
Ａｇ５ＴａＳＷ、Ｒｅ、Ｏｓ、Ｐｔ％Ａｕのうち１種類
もしくは２種類以上の合金膜を用いて、またセンダスト
膜の代わりにＣｏ系アモルファス膜、Ｆｅ系合金膜、窒
化鉄膜等の高飽和磁束密度膜等を用いても同様の効果が
得られる。High saturation magnetic flux density films such as Co-based amorphous films, Fe-based alloy films, iron nitride films, etc. are used instead of sendust films, using one or more alloy films of Ag5TaSW, Re, Os, and Pt%Au. A similar effect can be obtained by using .
実施例２
ギャップ近傍にセンダスト合金薄膜１を用い、それ以外
の磁路はフェライト２を、また両者の境界にＦｅｏ、５
ＩＴｏ、ｓ膜４が５０Å、Ｆｅ膜５が５０人形成された
ＭＩＧタイプのヘッドである。センダスト合金薄膜１の
膜厚は１０ｕｍであり、３はガラス、６はギャップであ
る。従来例では、主信号に対して一１０ｄＢ （０，１
３ＭＨｚ）あった疑似信号出力が上記の構成により一３
１ｄＢ （０，１３ＭＨｚ）に減少した。Example 2 Sendust alloy thin film 1 was used near the gap, ferrite 2 was used for the other magnetic paths, and Feo, 5 was used at the boundary between the two.
It is a MIG type head in which an ITo, S film 4 of 50 Å thickness and 50 Fe films 5 are formed. The thickness of the sendust alloy thin film 1 is 10 um, 3 is glass, and 6 is a gap. In the conventional example, -10 dB (0,1
The above configuration reduces the pseudo signal output (3MHz) to 3MHz.
It decreased to 1dB (0.13MHz).
この場合、Ｆｅ１ｒのＩｒ０代わりにＲｕ、Ｒｈ、Ｐｄ
ＳＡｇ、ＴａｌＷ％Ｒｅ、０ｓＳＰｔ。In this case, Ru, Rh, Pd instead of Ir0 of Fe1r
SAg, TalW%Re, 0sSPt.
Ａｕ、Ｉｒのうち１種類もしくは２種類以上の合金膜を
用いて、またセンダスト膜の代わりにＣ。Using an alloy film of one or more of Au and Ir, and using C instead of the sendust film.
系アモルファス膜、Ｆｅ系合金膜、窒化鉄膜等の高飽和
磁束密度膜等を用いても同様の効果が得られる。Similar effects can be obtained by using a high saturation magnetic flux density film such as an amorphous film, an Fe alloy film, or an iron nitride film.
実施例３
ギャップ近傍にセンダスト合金薄膜１を用い、それ以外
のけ路はフェライト２を、また両者の境界にＳｉの酸化
物膜４が５０Å、Ｆｅ膜５が５０人形成されたＭｒＧタ
イプのヘッドである。センダスト合金薄膜ｌの膜厚は１
０μｍであり、３はガラス、６はギャップである。従来
例では、主信号に対して一１０ｄＢ （０，１３ＭＨｚ
）あった疑似信号出力が上記の構成により一３ｔｄａ
（０，１３ＭＨｚ）に減少した。Example 3 A MrG type head in which a sendust alloy thin film 1 was used near the gap, ferrite 2 was used for the other channels, and a 50 Å Si oxide film 4 and 50 Fe films 5 were formed at the boundary between the two. It is. The thickness of the sendust alloy thin film l is 1
0 μm, 3 is glass, and 6 is a gap. In the conventional example, -10 dB (0.13 MHz
)The above configuration reduces the pseudo signal output to -3tda.
(0.13MHz).
この場合、Ｓｉの酸化物膜の代わりにＡｌの酸化物膜、
もしくはＴｉの酸化物膜、もしくはＴａの酸化物膜、も
しくはＺｒの酸化物膜、もしくはＮｂの酸化物膜が用い
られても、またセンダスト膜の代わりにＣｏ系アモルフ
ァス膜、Ｆｅ系合金膜、窒化鉄膜等の高飽和磁束密度膜
等を用いても同様の効果が得られる。In this case, instead of the Si oxide film, an Al oxide film,
Alternatively, even if a Ti oxide film, a Ta oxide film, a Zr oxide film, or a Nb oxide film is used, a Co-based amorphous film, Fe-based alloy film, or nitride film may be used instead of the sendust film. A similar effect can be obtained by using a high saturation magnetic flux density film such as an iron film.
第３図（ａ）にセンダスト（０，１μｍ）／フェライト
、また同図ら）にセンダスト（０，１ａ ｍ ） ／
Ｆ ｅ （０，００５ｔｔ ｍ） ／ Ｉ ｒ （０，
００５＃ ｍ） ／フェライト、のＸ線回折パターンを
示す、（ａ）に比べ（ｂ）の方が（１１０）面の回折強
度が大きくなっている。このことはセンダストの初期形
成膜の結晶性に関して（ｂ）の方が改善されていること
を示している。つまり疑似信号の発生源になる磁気劣化
層であるセンダスト膜の初期形成膜の磁気特性が（ｂ）
の方が良くなっていると考えられ、このことが疑似信号
出力をより低減すると考えられる。Figure 3(a) shows sendust (0.1 μm)/ferrite, and the same figure also shows sendust (0.1 μm)/ferrite.
F e (0,005tt m) / I r (0,
005#m)/ferrite, the diffraction intensity of the (110) plane is higher in (b) than in (a). This shows that the crystallinity of the initially formed film of sendust is improved in (b). In other words, the magnetic properties of the initially formed Sendust film, which is the magnetically degraded layer that is the source of spurious signals, are (b)
is considered to be better, and this is considered to further reduce the spurious signal output.
第４図にＦｅ膜の膜厚を５０人一定とした時の、反応防
止膜（Ｉ ｒ）の膜厚と疑似信号出力（０，１３Ｍ Ｈ
ｚ ）の関係を示す、この図からｒｒの膜厚は５０人の
時に疑似信号出力が最小（−３０ｄＢ）になることがわ
かる。また膜厚が２０人から４００人の間で疑似信号出
力が主信号に対して一２０ｄＢ以下となる。Figure 4 shows the film thickness of the reaction prevention film (Ir) and the pseudo signal output (0.13M H
z ), it can be seen from this figure that the pseudo signal output becomes minimum (-30 dB) when the film thickness of rr is 50 people. Further, when the film thickness is between 20 and 400 people, the pseudo signal output becomes -20 dB or less with respect to the main signal.
５０人の時に最小となる理由は、ギャップ長と信号出力
の関、係から、■「が非磁性であるためにこの膜厚が大
きくなると、この部分からの信号が大きくなり、つまり
疑似信号が大きくなり、一方膜厚が小さくなるほどフェ
ライトとセンダスト膜との反応が十分に抑えられなくな
り疑似信号が大きくなる。そしてこれらの効果の最小と
なるのが５０人ということである。The reason why the minimum value is reached when there are 50 people is because of the relationship between the gap length and the signal output.■ Since ``is non-magnetic, as this film thickness increases, the signal from this part increases, which means that spurious signals are generated. On the other hand, as the film thickness becomes smaller, the reaction between the ferrite and the sendust film cannot be sufficiently suppressed, and the false signal becomes larger.The minimum of these effects is 50 people.
この場合、ＩｒＯ代わりにＲｕ、Ｒｈ５Ｐｄ、Ａｇ５Ｔ
ａ、Ｗ、Ｒｅ、°Ｏｓ、Ｐｔ、Ａｕのうち１種類もしく
は２種類以上の合金膜を用いて、またセンダスト膜の代
わりにＣｏ系アモルファス膜、Ｆｅ系合金膜、窒化鉄膜
、Ｆｅ系組成変調膜、ＣＯ系組成変調膜、Ｆｅｒｎ系合
金膜等を用いても同様の効果が得られる。In this case, Ru, Rh5Pd, Ag5T instead of IrO
Using an alloy film of one or more of a, W, Re, °Os, Pt, and Au, and instead of the sendust film, a Co-based amorphous film, Fe-based alloy film, iron nitride film, or Fe-based composition. Similar effects can be obtained by using a modulation film, a CO-based composition modulation film, a Fern-based alloy film, or the like.
またこれらの膜の形成方法としてはフェライト基板上に
反応防止膜、Ｆｅ膜、高飽和磁束密度材料膜をスパッタ
法もしくは蒸着法に関わらず、真空を破らず連続的に形
成することが望ましい。As for the method for forming these films, it is desirable to continuously form the reaction prevention film, Fe film, and high saturation magnetic flux density material film on the ferrite substrate without breaking the vacuum, regardless of the sputtering method or vapor deposition method.
発明の効果 本発明による磁気ヘッドにより、例えばＶＴＲ。Effect of the invention The magnetic head according to the present invention can be used, for example, in a VTR.
ＤＡＴ、ＦＤＤ用ヘッドに従来より低コストのＭＩＧタ
イプヘッドが利用でき、記録効率の優れた磁気ヘッドを
今までに比べて歩留り良く製造できる。MIG type heads, which are lower in cost than conventional ones, can be used for DAT and FDD heads, and magnetic heads with excellent recording efficiency can be manufactured with higher yields than ever before.
第１図は本発明の一実施例の磁気ヘッドの斜視図、第２
図は従来の磁気ヘッドの斜視図、第３図はＸ線回折パタ
ーンの説明図、第４図は本発明の磁気ヘッドの反応防止
膜の膜厚と疑似信号出力の関係を示すグラフである。
１・・・・・・センダスト合金薄膜、２・旧・・フェラ
イト、３・・・・・・ガラス、４・・・・・・Ｉｒ１ｌ
、５・・・・・・Ｆｅ膜、６・・・・・・ギャップ。FIG. 1 is a perspective view of a magnetic head according to an embodiment of the present invention, and FIG.
3 is an explanatory diagram of an X-ray diffraction pattern, and FIG. 4 is a graph showing the relationship between the thickness of the reaction prevention film and the pseudo signal output of the magnetic head of the present invention. 1... Sendust alloy thin film, 2... Old ferrite, 3... Glass, 4... Ir1l
, 5... Fe film, 6... Gap.
Claims (3)
ト膜、アモルファス膜、Ｆｅ系合金膜、窒化鉄系膜等の
高飽和磁束密度材料膜からなるＭＩＧヘッドの、フェラ
イトと上記高飽和磁束密度材料膜の境界に、フェライト
側からＲｕ、Ｒｈ、Ｐｄ、Ａｇ、Ｔａ、Ｗ、Ｒｅ、Ｏｓ
、Ｉｒ、Ｐｔ、Ａｕのうち１種類もしくは２種類以上の
合金膜が２０Åから４００Å、その次にＦｅ膜が２０Å
から２０００Å形成されていることを特徴とする磁気ヘ
ッド。(1) Ferrite and the above-mentioned high saturation magnetic flux density material film of the MIG head whose main core is ferrite and the vicinity of the gap is made of high saturation magnetic flux density material film such as sendust film, amorphous film, Fe-based alloy film, iron nitride film, etc. From the ferrite side, Ru, Rh, Pd, Ag, Ta, W, Re, Os
, an alloy film of one or more types of Ir, Pt, and Au is 20 Å to 400 Å, followed by an Fe film of 20 Å.
A magnetic head characterized in that the magnetic head is formed with a thickness of 2000 Å.
ト膜、アモルファス膜、Ｆｅ系合金膜、窒化鉄系膜等の
高飽和磁束密度材料膜からなるＭＩＧヘッドの、フェラ
イトと上記高飽和磁束密度材料膜の境界に、フェライト
側からＦｅ−Ｍ合金膜（ＭはＲｕ、Ｒｈ、Ｐｄ、Ａｇ、
Ｔａ、Ｗ、Ｒｅ、Ｏｓ、Ｉｒ、Ｐｔ、Ａｕのうち１種類
もしくは２種類以上の合金）が２０Åから６００Å、さ
らにＦｅ膜が２０Åから２０００Å形成されていること
を特徴とする磁気ヘッド。(2) Ferrite and the above-mentioned high saturation magnetic flux density material film of an MIG head in which the main core is ferrite and the vicinity of the gap is a high saturation magnetic flux density material film such as sendust film, amorphous film, Fe-based alloy film, iron nitride film, etc. Fe-M alloy film (M is Ru, Rh, Pd, Ag,
1. A magnetic head characterized in that an alloy of one or more of Ta, W, Re, Os, Ir, Pt, and Au) is formed to a thickness of 20 to 600 Å, and an Fe film is formed to a thickness of 20 to 2000 Å.
ト膜、アモルファス膜、Ｆｅ系合金膜、窒化鉄系膜等の
高飽和磁束密度材料膜からなるＭＩＧヘッドの、フェラ
イトと上記高飽和磁束密度材料膜の境界に、フェライト
側からＳｉの酸化物膜、もしくはＡｌの酸化物膜、もし
くはＴｉの酸化物膜、もしくはＴａの酸化物膜、もしく
はＺｒの酸化物膜、もしくはＮｂの酸化物膜が２０Åか
ら４００Å、Ｆｅ膜が２０Åから２０００Å形成されて
いることを特徴とする磁気ヘッド。(3) Ferrite and the above-mentioned high saturation magnetic flux density material films for MIG heads in which the main core is ferrite and the vicinity of the gap is made of high saturation magnetic flux density material films such as sendust film, amorphous film, Fe-based alloy film, iron nitride film, etc. At the boundary, from the ferrite side, a Si oxide film, an Al oxide film, a Ti oxide film, a Ta oxide film, a Zr oxide film, or a Nb oxide film from 20 Å to 400 Å and an Fe film having a thickness of 20 Å to 2000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28952489A JPH03150711A (en) | 1989-11-07 | 1989-11-07 | Magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28952489A JPH03150711A (en) | 1989-11-07 | 1989-11-07 | Magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03150711A true JPH03150711A (en) | 1991-06-27 |
Family
ID=17744371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28952489A Pending JPH03150711A (en) | 1989-11-07 | 1989-11-07 | Magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03150711A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5862023A (en) * | 1996-04-26 | 1999-01-19 | Sony Corporation | Metal in gap magnetic head having metal magnetic film including precious metal layer |
-
1989
- 1989-11-07 JP JP28952489A patent/JPH03150711A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5862023A (en) * | 1996-04-26 | 1999-01-19 | Sony Corporation | Metal in gap magnetic head having metal magnetic film including precious metal layer |
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