JPH0314765B2 - - Google Patents
Info
- Publication number
- JPH0314765B2 JPH0314765B2 JP58047725A JP4772583A JPH0314765B2 JP H0314765 B2 JPH0314765 B2 JP H0314765B2 JP 58047725 A JP58047725 A JP 58047725A JP 4772583 A JP4772583 A JP 4772583A JP H0314765 B2 JPH0314765 B2 JP H0314765B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- production plate
- silicon
- release agent
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 32
- 239000000155 melt Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 239000011247 coating layer Substances 0.000 claims description 11
- 239000006082 mold release agent Substances 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 101150006573 PAN1 gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229940095676 wafer product Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/18—TPC being performed according to specific parameters
- H04W52/22—TPC being performed according to specific parameters taking into account previous information or commands
- H04W52/226—TPC being performed according to specific parameters taking into account previous information or commands using past references to control power, e.g. look-up-table
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. TPC [Transmission Power Control], power saving or power classes
- H04W52/04—TPC
- H04W52/18—TPC being performed according to specific parameters
- H04W52/22—TPC being performed according to specific parameters taking into account previous information or commands
- H04W52/225—Calculation of statistics, e.g. average, variance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Probability & Statistics with Applications (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58047725A JPS59174514A (ja) | 1983-03-22 | 1983-03-22 | 多結晶シリコンウエハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58047725A JPS59174514A (ja) | 1983-03-22 | 1983-03-22 | 多結晶シリコンウエハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59174514A JPS59174514A (ja) | 1984-10-03 |
| JPH0314765B2 true JPH0314765B2 (nl) | 1991-02-27 |
Family
ID=12783302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58047725A Granted JPS59174514A (ja) | 1983-03-22 | 1983-03-22 | 多結晶シリコンウエハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59174514A (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590623A (ja) * | 1991-09-28 | 1993-04-09 | Nissha Printing Co Ltd | 太陽電池用転写材 |
| US5424224A (en) * | 1993-01-19 | 1995-06-13 | Texas Instruments Incorporated | Method of surface protection of a semiconductor wafer during polishing |
-
1983
- 1983-03-22 JP JP58047725A patent/JPS59174514A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59174514A (ja) | 1984-10-03 |
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