JPH0314245A - Resin-sealing method for semiconductor device - Google Patents
Resin-sealing method for semiconductor deviceInfo
- Publication number
- JPH0314245A JPH0314245A JP15026289A JP15026289A JPH0314245A JP H0314245 A JPH0314245 A JP H0314245A JP 15026289 A JP15026289 A JP 15026289A JP 15026289 A JP15026289 A JP 15026289A JP H0314245 A JPH0314245 A JP H0314245A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- pair
- sheets
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000007789 sealing Methods 0.000 title claims description 21
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 8
- 239000000057 synthetic resin Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims 1
- 229920005989 resin Polymers 0.000 abstract description 28
- 239000011347 resin Substances 0.000 abstract description 28
- 239000002861 polymer material Substances 0.000 abstract description 9
- 230000009477 glass transition Effects 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 6
- 239000003822 epoxy resin Substances 0.000 abstract description 3
- 229920000647 polyepoxide Polymers 0.000 abstract description 3
- 239000004745 nonwoven fabric Substances 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 abstract description 2
- 239000009719 polyimide resin Substances 0.000 abstract description 2
- 239000002952 polymeric resin Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000008188 pellet Substances 0.000 description 10
- 238000004382 potting Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 239000004634 thermosetting polymer Substances 0.000 description 3
- GXCLVBGFBYZDAG-UHFFFAOYSA-N N-[2-(1H-indol-3-yl)ethyl]-N-methylprop-2-en-1-amine Chemical compound CN(CCC1=CNC2=C1C=CC=C2)CC=C GXCLVBGFBYZDAG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は、半導体装置の製造工程中の１工程として使用
される樹脂封止方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resin encapsulation method used as one step in the manufacturing process of a semiconductor device.
（従来の技術）
従来、半導体装置の製造工程の１つとしてのプラスチッ
ク封止工程としては、以下のものかある。(Prior Art) Conventionally, there are the following plastic sealing processes as one of the manufacturing processes of semiconductor devices.
即ち、モールド樹脂を用い、６０〜１００ｋｇ／ｃｉｄ
程度の圧力をかけて封止したり（モールド法）、封止す
べき半導体チップの上に樹脂をポツティングしたり（ポ
ツティング法）、Ｅペレット（商品名）等を半導体チッ
プ上に置いて溶したり（Ｅペレット法）、あるいはチッ
プ及びリート等の上ドをＥペレット等で挟んで溶かした
りして（両面封止法）、封止を行っている。That is, using mold resin, 60 to 100 kg/cid
Applying a moderate amount of pressure to seal (molding method), potting resin onto the semiconductor chip to be sealed (potting method), or placing E-pellets (trade name) etc. on the semiconductor chip and melting them. Sealing is carried out by (E-pellet method) or by sandwiching and melting the upper part of the chip, leat, etc. between E-pellets (double-sided sealing method).
（発明が解決しようとする課題）
前記従来の各プラスチック封止方法には以下のような問
題があり、特に、ＰＫＧ層をある程度以下には薄くてき
ない。(Problems to be Solved by the Invention) Each of the conventional plastic sealing methods described above has the following problems. In particular, the PKG layer cannot be made thinner than a certain level.
１）モールド法の場合
ＰＫＧ層を薄くすると、半導体チップに対する未充填が
生じる。これは、特に、チップが大型になる程著しい。1) In the case of the molding method, if the PKG layer is thinned, the semiconductor chip will not be filled. This is particularly noticeable as the chip becomes larger.
このため、ＰＫＧ層をあまり薄くすることはできない。For this reason, the PKG layer cannot be made very thin.
２） ポツティング法の場合
ペレットの一方に樹脂を付ける場合反りか生ずる為、よ
り薄くしないといけないがポツティングの性質上、大型
ペレットであると厚くなる。2) In the case of the potting method, if resin is applied to one side of the pellet, it will warp, so it must be made thinner, but due to the nature of potting, large pellets will be thicker.
３） Ｅペレット法の場合
その特質上、大型のチップの全体を薄く被覆することは
できない。また、硬化に比較的長い時間を要する。Ｅペ
レットの性質上、α（熱膨張係数）が大であり、大型ペ
レットの信頼性かもたない。3) In the case of the E-pellet method, due to its characteristics, it is not possible to thinly coat the entire large chip. Also, it takes a relatively long time to cure. Due to the nature of E pellets, α (coefficient of thermal expansion) is large, and the reliability of large pellets is also poor.
４）両面封止法の場合
使用する材料の特性上、被覆層が厚いものとなり、その
層中に気泡が生じ易い。4) In the case of the double-sided sealing method, the coating layer is thick due to the characteristics of the materials used, and bubbles are likely to occur in the layer.
さらに、上記２）〜４）の方法によった場合には、チッ
プを被う樹脂の密度が高密度状態とならず、樹脂中に気
泡が残ったり、耐湿性、耐熱衝撃性において上記ｌ）の
方法によって被覆した樹脂層よりも劣ったものとなる。Furthermore, in the case of methods 2) to 4) above, the density of the resin covering the chip does not become high density, and air bubbles remain in the resin, and the moisture resistance and thermal shock resistance decrease in the above 1). The resin layer is inferior to the resin layer coated by the above method.
また、上記２）〜４）の方法では、上記１）の工程で用
い得るモールド樹脂よりもガラス転移温度Ｔ の低いも
のしか用いることかできず、そのため耐熱性も劣ること
となる。Further, in the above methods 2) to 4), only mold resins having a lower glass transition temperature T than the mold resin that can be used in the above step 1) can be used, and therefore the heat resistance is also inferior.
本発明は、上記に鑑みてなされたもので、その目的は、
リードフレーム等の支持部利に固着した半導体チップを
樹脂封止するに際し、樹脂層を薄いものとしつつも、緻
密さに優れ、耐熱性及び耐熱衝撃性に富んだ半導体装置
を得る方法を提供することにある。The present invention has been made in view of the above, and its purpose is to:
To provide a method for obtaining a semiconductor device with excellent density, high heat resistance, and thermal shock resistance while making the resin layer thin when resin-sealing a semiconductor chip fixed to a supporting part such as a lead frame. There is a particular thing.
（課題を解決するための手段）
本発明の半導体装置の樹脂層１１一方法は、半導体チッ
プをリードフレーム等の支持部材に固着した中間半導体
装置の両面を、合成樹脂を少なくとも１つの成分として
有する一対のシート状の物体で挟み、それらの各シート
の外側に加熱した気体を加圧して吹き付けたり、充満さ
せたりすることにより、前記一対のシート中の合成樹脂
により前記中間半導体装置の両面を樹脂封止するものと
して構成される。(Means for Solving the Problems) A method of resin layer 11 of a semiconductor device according to the present invention includes a synthetic resin as at least one component of both surfaces of an intermediate semiconductor device in which a semiconductor chip is fixed to a support member such as a lead frame. By sandwiching the intermediate semiconductor device between a pair of sheet-like objects and blowing or filling the outside of each sheet with pressurized heated gas, the synthetic resin in the pair of sheets is used to cover both sides of the intermediate semiconductor device with resin. It is configured to be sealed.
（作 用）
中間半導体装置の両面を一対のシート状の物質（体）で
挟み、その状態で各シートの外側に加圧、加熱気体が吹
き付けられる。このため、一対のシートは中間半導体装
置を中心とし、それに押し付けられた状態で溶け、半導
体チップを薄く、緻密に被った状態で封止する。(Operation) Both surfaces of the intermediate semiconductor device are sandwiched between a pair of sheet-like materials (bodies), and in this state, pressurized and heated gas is blown onto the outside of each sheet. For this reason, the pair of sheets is centered around the intermediate semiconductor device and is melted while being pressed against it, thereby sealing the semiconductor chip in a thin and densely covered state.
（実施例）
第１図は、本発明の一実施例による半導体装置の製造工
程としての樹脂封止工程を説明する断面説明図である。(Example) FIG. 1 is a cross-sectional explanatory diagram illustrating a resin sealing process as a manufacturing process of a semiconductor device according to an example of the present invention.
同図において、１は金型であり、２はこの金型１で支持
される樹脂封止対象としての中間半導体装置である。こ
の金型１は分離可能な上型ＩＡと下型ＩＢとを有する。In the figure, 1 is a mold, and 2 is an intermediate semiconductor device supported by the mold 1 to be resin-sealed. This mold 1 has a separable upper mold IA and lower mold IB.
上型］Ａ、上型ＩＢにはそれぞれ通孔１ａ ｌｂか形
設されており、それらの通孔１ａ ］、ｂは、互いに
向い会う方向に加圧、加熱された気体３ａ、３ｂか加え
られるものである。上記中間半導体装置２としては、リ
ードフレーム５等の上に半導体チップ６をダイボンディ
ング、ワイヤボンディングあるいはＩＬＢ等したものを
用いることができる。Upper mold A and upper mold IB are provided with through holes 1a and 1b, respectively, and pressurized and heated gases 3a and 3b are applied to these through holes 1a and 1b in directions facing each other. It is something. As the intermediate semiconductor device 2, a semiconductor chip 6 formed by die bonding, wire bonding, ILB, etc. on a lead frame 5 or the like can be used.
次に、上記の中間半導体装置２の樹脂封止１ユ程につい
て説明する。先ず、上記上型］Ａ及び下型１ＢをＹめ定
めた温度に加熱しておく。たたし、これらの型ＩＡ、Ｉ
Ｂを加熱せずに、常温のままとすることもてきる。次に
、中間半導体装置２を、第１図に示すように、上型ＩＡ
と下型１Ｂとの間に挟持する。挟持した中間半導体装置
２の両面に熱硬化性高分子材料シート（例えば、エポキ
シ樹脂シート）８Ａ、８Ｂを位置させる。このシート８
Ａ、８Ｂは、例えはポリイミド樹脂フィルムや不織布等
から成る基層８ａと、エポキシ樹脂等の高分子材料層８
ｂとから構成されたものである。Next, the resin sealing of the intermediate semiconductor device 2 will be described. First, the upper mold A and the lower mold 1B are heated to a predetermined temperature Y. However, these types IA, I
It is also possible to leave B at room temperature without heating it. Next, as shown in FIG.
and the lower mold 1B. Thermosetting polymer material sheets (for example, epoxy resin sheets) 8A and 8B are placed on both sides of the sandwiched intermediate semiconductor device 2. This sheet 8
A and 8B are a base layer 8a made of, for example, a polyimide resin film or nonwoven fabric, and a polymeric material layer 8 made of epoxy resin or the like.
It is composed of b.
この高分子材料層８ｂを構成する高分子材料としては、
できるだけガラス転移温度Ｔｇか高く耐熱性があり、耐
湿性、耐熱衝撃性の高いものが望ましい。さらに、耐湿
性の向上を図るには、基層８ａと高分子材料層８ｂとの
間に、又は、基層８ａの外面に、１〜数μｍ程度の金属
箔層を形設することもできる。これらのシート８Ａ、８
Ｂは当然高分子材料層８ｂが内側になるように配置され
る。The polymer material constituting this polymer material layer 8b is as follows:
It is desirable that the glass transition temperature Tg is as high as possible, that the material is heat resistant, and has high moisture resistance and thermal shock resistance. Furthermore, in order to improve the moisture resistance, a metal foil layer having a thickness of about 1 to several μm may be formed between the base layer 8a and the polymer material layer 8b or on the outer surface of the base layer 8a. These sheets 8A, 8
B is naturally arranged so that the polymer material layer 8b is on the inside.
さらに、必要に応じて、シート８Ａ、８Ｂを配置する前
に中間半導体装置２の両面を熱硬化性または熱可塑性樹
脂で被うこともできる。Furthermore, if necessary, both sides of the intermediate semiconductor device 2 can be covered with thermosetting or thermoplastic resin before placing the sheets 8A, 8B.
次に、上型ＩＡ、下型ＩＢの通孔１ａ、ｌｂに、所定の
圧力、温度に加圧、加熱された気体３ａ３ｂを導入する
。この気体３ａ、３ｂとしては空気や不活性気体等を用
いることができるか、例えば半導体チップ６のＡβ配線
層等を腐食させるおそれのある気体等は用いることがで
きない。このような加圧、加熱された気体３ａ、３ｂの
導入により、シート８Ａ、８Ｂは中間半導体装置２の両
側に密着し、且つ高分子材料層８ｂが先ず溶解し、その
後中間半導体装置２の半導体チップ６部分を封止した封
止樹脂１０（第２図参照）となって硬化する。成形中の
気体３ａ、３ｂの圧力は、成形される素子（ワイヤボン
ディングしたものか、あるいはＩＬＢしたちのか等）に
応じて、時間的にフトンロールされる。さらに、必要に
応して一対のプランジャを用い、それらのプランジャて
シ）８Ａ、８Ｂを挟み、プランジャによる圧力と気体３
ａ、３ｂによる圧力とを併用して封止を行うこともでき
る。十分硬化したら気体３ａ、 ′３ｂの圧力を下げ、
金型１を上型ＩＡと下型ＩＢとに開いて封止工程の終了
した中間半導体装置２Ａを取り出す。このようにして得
られた封止済の中間１１′−導体装置２Ａにおいては、
高分子材料か半導体チップの全面を薄く緻密に被ったも
のとなる。Next, gas 3a3b pressurized and heated to a predetermined pressure and temperature is introduced into the through holes 1a and lb of the upper mold IA and the lower mold IB. Air, an inert gas, or the like can be used as the gases 3a and 3b, or, for example, a gas that may corrode the Aβ wiring layer of the semiconductor chip 6 cannot be used. By introducing the pressurized and heated gases 3a and 3b, the sheets 8A and 8B are brought into close contact with both sides of the intermediate semiconductor device 2, and the polymer material layer 8b is first melted, and then the semiconductor of the intermediate semiconductor device 2 is melted. The resin hardens into a sealing resin 10 (see FIG. 2) that seals the chip 6 portion. The pressure of the gases 3a and 3b during molding changes over time depending on the element to be molded (wire bonded, ILB, etc.). Furthermore, if necessary, use a pair of plungers and sandwich the plungers 8A and 8B between them, so that the pressure caused by the plungers and the gas 3
It is also possible to perform sealing by using pressure in combination with a and 3b. Once it has hardened sufficiently, lower the pressure of gases 3a and '3b,
The mold 1 is opened into an upper mold IA and a lower mold IB, and the intermediate semiconductor device 2A from which the sealing process has been completed is taken out. In the thus obtained sealed intermediate 11'-conductor device 2A,
It is made of a polymeric material or a thin, dense covering that covers the entire surface of a semiconductor chip.
なお、上記熱硬化性高分子材料シート８Ａ。Note that the thermosetting polymer material sheet 8A.
８Ｂに代えて、熱可塑性樹脂シートやＥペレット等を用
いることもできる。熱可塑性シートを用いた場合には、
金型１の通孔］ａ、ｌｂに導く気体３ａ、３ｂの温度は
、当初は高温のものとし、後半は冷たいものとすること
もできる。熱可塑樹脂は冷却しないと取扱いできないが
熱硬化性樹脂は熱いままでよい。8B may be replaced with a thermoplastic resin sheet, E pellets, or the like. When using thermoplastic sheet,
The temperature of the gases 3a and 3b introduced into the holes a and lb of the mold 1 may be high at the beginning and cold at the latter half. Thermoplastic resins cannot be handled unless they are cooled, but thermosetting resins can be kept hot.
上述の本発明の実施例によれば、従来例に比して以下の
ような効果が得られる。即ち、従来のモルト品において
は、封止樹脂層の厚さを１＋ｎｍ位よりも薄くできない
。また、従来のポツティング品の場合は、ガラス転移温
度Ｔ として１２０°Ｃ位以上の樹脂か使用できず、高
耐熱性か期待てぎない。これに対し、本発明の実施例に
よれば、従来のトランスファモールドの場合と同様に高
緻密性を維持したまま、従来のモールド品の場合よりも
封止樹脂層を薄くでき、且つ従来のボッティング品の場
合よりも高耐熱性を図ることかできる。According to the embodiment of the present invention described above, the following effects can be obtained compared to the conventional example. That is, in conventional malt products, the thickness of the sealing resin layer cannot be made thinner than about 1+nm. Furthermore, in the case of conventional potted products, only resins with a glass transition temperature T of about 120° C. or higher can be used, and high heat resistance cannot be expected. In contrast, according to the embodiments of the present invention, the sealing resin layer can be made thinner than in the case of conventional molded products while maintaining high density as in the case of conventional transfer molding, and It is possible to achieve higher heat resistance than in the case of heat-resistant products.
即ち、本発明の実施例によれば、使用するエポキシシー
ト（熱硬化性高分子材料シー１−８Ａ、８Ｂ）等を０．
１〜０．３ｍｍ以内の厚さのものとすることにより、封
止後の樹脂層の厚さを０． ５〜１．０ｍｍ以内とする
ことができる。しかも、樹脂封止に当っては、樹脂に圧
力をかけて成形するようにしたので、成形品を、従来の
トランスファモルトで行うものとほぼ同様に緻密なもの
とすることかできる。さらに、封止用の樹脂として、ガ
ラス転移温度Ｔ が１２０°Ｃ以上のものを用いること
ができ、これにより高耐熱性か期待できる。That is, according to the embodiment of the present invention, the epoxy sheets (thermosetting polymer material sheets 1-8A, 8B), etc. used are 0.
By making the thickness within 1 to 0.3 mm, the thickness of the resin layer after sealing can be reduced to 0.3 mm. It can be within 5 to 1.0 mm. Moreover, since the resin is molded by applying pressure to the resin, the molded product can be made to be as dense as that made with conventional transfer malt. Further, as the sealing resin, a resin having a glass transition temperature T of 120° C. or higher can be used, and thus high heat resistance can be expected.
また、本発明の実施例によれば、比較的短時間で成形品
を得ることかできる。即ち、従来のポツティング方法や
Ｅペレットを用いる方法においては、自然な状態でポツ
ティングしている。そのため、高品位なものを作るには
、硬化時間を長くとらなければならない。これに対し、
本発明の実施例によれば、モールド法等のように短い時
間で成形することができる。Furthermore, according to the embodiments of the present invention, a molded article can be obtained in a relatively short time. That is, in the conventional potting method and the method using E pellets, potting is performed in a natural state. Therefore, in order to produce high-quality products, it is necessary to take a long curing time. In contrast,
According to the embodiments of the present invention, molding can be performed in a short time using a molding method or the like.
本発明によれば、半導体チップをり一トフレーム等に固
着した中間半導体装置を一対の合成樹脂のシートで挾み
、それらのシートに加熱、加圧気体を吹き付け、充満さ
せるようにしたので、封１１−層を薄いものとしつつも
封止層を緻密なものとてき、さらに前記シートの合成樹
脂としてガラス転移温度の高いものを用い１するように
して、耐熱性及び耐熱衝撃性に富んだ半導体装置を得る
ことかできる。According to the present invention, an intermediate semiconductor device in which a semiconductor chip is fixed to a frame or the like is sandwiched between a pair of synthetic resin sheets, and heated and pressurized gas is blown onto the sheets to fill them. Sealing 11 - The sealing layer is made thin but dense, and the synthetic resin of the sheet is made of a material with a high glass transition temperature1, so that it has high heat resistance and thermal shock resistance. It is possible to obtain semiconductor devices.
第１図は本発明の一実施例を説明する断面説明図、第２
図はそれによって得られる半導体装置の断面図である。
１・・金型、１Ａ・・・上型、１Ｂ・−下型、ｌａ。
］ｂ・・・通孔、２・・・中間半導体装置、３ａ、３ｂ
・・気体、
８Ａ。
５・・
ノードフレ
８Ｂ・・・シ
ト、
ム、
６・・・半導体チップ、
８ａ・・・基層、
ｂ
高分子
材料層、
１０・・・封止樹脂。FIG. 1 is a cross-sectional explanatory diagram illustrating one embodiment of the present invention, and FIG.
The figure is a cross-sectional view of a semiconductor device obtained thereby. 1...Mold, 1A...Upper die, 1B...Lower die, la. ]b...Through hole, 2...Intermediate semiconductor device, 3a, 3b
...Gas, 8A. 5... Nordfre 8B... material, 6... semiconductor chip, 8a... base layer, b polymer material layer, 10... sealing resin.
Claims (1)
中間半導体装置の両面を、合成樹脂を少なくとも１つの
成分として有する一対の薄いシート状の物体で挟み、そ
れらの各シートの外側に加熱した気体を加圧して吹き付
けたり、充満させることにより、前記一対のシート中の
合成樹脂により前記中間半導体装置の両面を樹脂封止す
ることを特徴とする半導体装置の樹脂封止方法。Both sides of an intermediate semiconductor device, in which a semiconductor chip is fixed to a support member such as a lead frame, are sandwiched between a pair of thin sheet-like objects containing synthetic resin as at least one component, and heated gas is applied to the outside of each sheet. A method for resin-sealing a semiconductor device, characterized in that both surfaces of the intermediate semiconductor device are sealed with the synthetic resin in the pair of sheets by pressure spraying or filling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026289A JPH0314245A (en) | 1989-06-13 | 1989-06-13 | Resin-sealing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15026289A JPH0314245A (en) | 1989-06-13 | 1989-06-13 | Resin-sealing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0314245A true JPH0314245A (en) | 1991-01-22 |
Family
ID=15493096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15026289A Pending JPH0314245A (en) | 1989-06-13 | 1989-06-13 | Resin-sealing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0314245A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5424250A (en) * | 1993-05-11 | 1995-06-13 | Kabushiki Kaisha Toshiba | Manufacturing method of encapsulating semiconductor device using two resin sheets having convex portions |
| EP0689243A3 (en) * | 1991-08-20 | 1996-06-12 | Toshiba Kk | Semiconductor device assembly |
| WO2005091352A1 (en) * | 2004-03-16 | 2005-09-29 | Advanced Micropackaging Technology Limited | Packaging of microelectronic, optoelectronic and other devices |
-
1989
- 1989-06-13 JP JP15026289A patent/JPH0314245A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0689243A3 (en) * | 1991-08-20 | 1996-06-12 | Toshiba Kk | Semiconductor device assembly |
| US5424250A (en) * | 1993-05-11 | 1995-06-13 | Kabushiki Kaisha Toshiba | Manufacturing method of encapsulating semiconductor device using two resin sheets having convex portions |
| WO2005091352A1 (en) * | 2004-03-16 | 2005-09-29 | Advanced Micropackaging Technology Limited | Packaging of microelectronic, optoelectronic and other devices |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4769344A (en) | Method of resin encapsulating a semiconductor device | |
| US7439101B2 (en) | Resin encapsulation molding method for semiconductor device | |
| US5733802A (en) | Semiconductor device and method of manufacturing the same | |
| JPH0652374A (en) | Card having at least one electronic element and manufacture of card thereof | |
| US3693252A (en) | A method of providing environmental protection for electrical circuit assemblies | |
| JP2603543B2 (en) | Adhesive tape for electronic components | |
| JPS62217645A (en) | Manufacture of semiconductor device | |
| JPS594859B2 (en) | Hermetic sealing cover unit and its manufacturing method | |
| JPH0314245A (en) | Resin-sealing method for semiconductor device | |
| CN1149920A (en) | Pass card or the like in the form of smart card | |
| JP2003249510A (en) | Method for sealing semiconductor | |
| JPH0817855A (en) | Manufacture of semiconductor device and laminate used therefor | |
| JPS6315448A (en) | Semiconductor device | |
| JPH03149864A (en) | Lead frame | |
| JPH10214925A (en) | Sealing label for sealing semiconductor device | |
| JP2003249509A (en) | Method for sealing semiconductor and sealed semiconductor | |
| JPH01272125A (en) | Manufacture of semiconductor device | |
| CN100573867C (en) | Chip-packaging structure, chip bearing belt and flattening method thereof | |
| JPH04107955A (en) | Sealing method of electronic circuit element | |
| JPH106672A (en) | Manufacture of resin package | |
| JPH10294404A (en) | Resin sealed electronic device and its manufacture | |
| JPH0546270Y2 (en) | ||
| JPS60132347A (en) | Manufacture of semiconductor device | |
| JPS6144436Y2 (en) | ||
| TW554505B (en) | Semiconductor package |