JPH03141189A - Quartz crucible for lifting silicon single crystal - Google Patents
Quartz crucible for lifting silicon single crystalInfo
- Publication number
- JPH03141189A JPH03141189A JP27873489A JP27873489A JPH03141189A JP H03141189 A JPH03141189 A JP H03141189A JP 27873489 A JP27873489 A JP 27873489A JP 27873489 A JP27873489 A JP 27873489A JP H03141189 A JPH03141189 A JP H03141189A
- Authority
- JP
- Japan
- Prior art keywords
- silicon single
- single crystal
- quartz crucible
- group
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000013078 crystal Substances 0.000 title claims abstract description 31
- 239000010453 quartz Substances 0.000 title claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 11
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract description 9
- 229910052796 boron Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 239000002019 doping agent Substances 0.000 abstract description 5
- 238000005204 segregation Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はＰＮ補償型シリコン単結晶引上げ用石英ルツボ
に関し、特に高抵抗で良質のシリコン単結晶を引上げる
ための、安価な石英ルツボに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a PN-compensated quartz crucible for pulling silicon single crystals, and particularly to an inexpensive quartz crucible for pulling high-resistance, high-quality silicon single crystals.
半導体素子の製造には、シリコン単結晶に３族元素をド
ープしたｎ型シリコン基板と、シリコン単結晶に５族元
素をドープしたｎ型シリコン基板とが用いられる。シリ
コン単結晶はこれらの各元素をごく少量ドープすること
によりその抵抗値が極端に低下する。In the manufacture of semiconductor devices, an n-type silicon substrate in which a silicon single crystal is doped with a Group 3 element and an n-type silicon substrate in which a silicon single crystal is doped with a Group 5 element are used. By doping a silicon single crystal with a very small amount of each of these elements, its resistance value is extremely reduced.
一方、シリコン単結晶は通常石英ルツボを用いてＣＺ法
により引上げられるが、ルツボの石英がシリコン融液に
溶は込むため、石英中の不純物もシリコン単結晶の抵抗
値を低下させる。On the other hand, silicon single crystals are usually pulled by the CZ method using a quartz crucible, but since the quartz in the crucible dissolves into the silicon melt, impurities in the quartz also reduce the resistance value of the silicon single crystal.
したがって、特に高抵抗かつ高品質のシリコン単結晶を
製造する場合には、ドープ剤のみでなく石英ルツボに帰
因する不純物も考慮しなければ、所定の特性を有するシ
リコン単結晶を得ることができない。Therefore, especially when manufacturing high-resistivity and high-quality silicon single crystals, it is not possible to obtain silicon single crystals with desired characteristics unless not only the dopant but also the impurities caused by the quartz crucible are taken into consideration. .
従来５石英ルツボに起因する不純物を極力少くする手段
として、シリコン融液に磁場を印加しながらシリコン単
結晶を引上げる方法、あるいは石英ルツボを高純度とし
、その粘性を高くしてルツボの浸食を抑制する方法が知
られている。 しかし、磁場を印加する方法では、シリ
コン融液の量に応じて磁場の強さを変動させる必要があ
るなど制御が複雑であり、所定の特性を得るための条件
の設定が難かしい。また装置も複雑となり、製造コスト
が非常に高価となる。Conventional 5 As a means of minimizing impurities caused by quartz crucibles, there is a method of pulling silicon single crystals while applying a magnetic field to silicon melt, or a method of making a quartz crucible of high purity and increasing its viscosity to prevent erosion of the crucible. There are known ways to suppress it. However, in the method of applying a magnetic field, control is complicated, such as the need to vary the strength of the magnetic field depending on the amount of silicon melt, and it is difficult to set conditions for obtaining predetermined characteristics. Furthermore, the device becomes complicated and the manufacturing cost becomes very high.
また、石英を高純度とすることにより粘性を高くするこ
とはできるが、浸食量との相関は少ない。同一量の浸食
が発生しても高純度のルツボの方が当然それだけ不純物
の溶は込みは少なくなるが、高純度ルツボは、原料石英
粉の製造が難しく、非常に高価なものとなる。Furthermore, although it is possible to increase the viscosity by making quartz highly pure, there is little correlation with the amount of erosion. Naturally, even if the same amount of erosion occurs, a crucible with high purity will have less penetration of impurities, but high purity crucibles are difficult to produce raw quartz powder and are extremely expensive.
本発明は、不純物の影響が少ない石英ルツボを提供する
ことを目的とする。An object of the present invention is to provide a quartz crucible that is less affected by impurities.
本発明によれば、シリコン半導体において、ｎ型半導体
を形成する第５族元素がｎ型半導体を形成する第３族元
素の０．５〜５倍含有されているシリコン単結晶引き上
げ用石英ルツボが提供される。According to the present invention, there is provided a quartz crucible for pulling a silicon single crystal in which a group 5 element forming an n-type semiconductor is contained 0.5 to 5 times as much as a group 3 element forming an n-type semiconductor in a silicon semiconductor. provided.
Ｂ等の第３族元素はｎ型半導体を形成するドーパントで
あり、またＰ、Ａｓはｎ型半導体を形成するドーパント
であり、シリコン単結晶中において互いに逆の作用を営
む。従ってこれら元素が共存すると互いに他方の影響を
打ち消すことが期待される。そこで、本発明においては
第３族元素と第５族元素をその影響が互いに打ち消され
る量を含有させることにより、実質的にこれら元素の影
響が無視できる石英ルツボとした。Group 3 elements such as B are dopants that form an n-type semiconductor, and P and As are dopants that form an n-type semiconductor, and have opposite effects to each other in a silicon single crystal. Therefore, when these elements coexist, it is expected that they will cancel each other's influence. Therefore, in the present invention, a quartz crucible is created in which the influence of these elements can be substantially ignored by containing Group 3 elements and Group 5 elements in such amounts that their influences cancel each other out.
一般に、シリコン融液中の不純物元素がシリコン単結晶
中に混入する割合は各元素の偏析係数（分配係数）に依
存する。第３族元素および第５族元素の偏析係数は夫々
次のとおりである。Generally, the proportion of impurity elements in a silicon melt mixed into a silicon single crystal depends on the segregation coefficient (distribution coefficient) of each element. The segregation coefficients of Group 3 elements and Group 5 elements are as follows.
たとえばＢの偏析係数は８Ｘ１０−”であるから溶融シ
リコン中にｌｐｐｍのＢが含まれる場合には、０．８ｐ
ｐｍのＢがシリコン単結晶中に取り込まれる。For example, the segregation coefficient of B is 8X10-'', so if lppm of B is contained in molten silicon, 0.8p
pm of B is incorporated into the silicon single crystal.
本発明の石英ルツボは上記偏析係数を考慮して５族元素
が３族元素の０．５倍〜５倍含有される。特に５族がＰ
およびＡｓであり、３族がＢであって、かつＰ＋０．４
Ａｓの含有量がＢの含有量の０．５倍〜４倍であること
が好ましい。石英ルツボが浸漬されて溶融シリコン中に
混入すると、Ｂ、ＰおよびＡｓが前記偏析係数に応じて
シリコン単結晶中に取り込まれる。単結晶中においてＢ
とＰ、ＡｓとはＰ＋ｎ補償関係にあるから１画成分の原
子数がほぼ同じであれば互いに他方の影響を打消すｐ、
ｎ補償効果が生ずる。石英ルツボ中のＰ＋０．４Ａｓ含
有量がＢの含有量の０．５倍以下であるとこの補償効果
が不十分である。The quartz crucible of the present invention contains 0.5 to 5 times as much Group 5 elements as Group 3 elements, considering the above segregation coefficient. Particularly, group 5 is P
and As, Group 3 is B, and P+0.4
It is preferable that the content of As is 0.5 to 4 times the content of B. When the quartz crucible is immersed into molten silicon, B, P, and As are incorporated into the silicon single crystal according to the segregation coefficient. B in single crystal
and P and As have a P+n compensation relationship, so if the number of atoms in one image component is almost the same, p and As cancel each other's influence.
n compensation effect occurs. If the P+0.4As content in the quartz crucible is less than 0.5 times the B content, this compensation effect will be insufficient.
またＰ＋０．４Ａｓ含有量がＢのき有量の５倍を越える
とシリコン単結晶がｐ、ｎ反転を生じて好ましくない。Furthermore, if the P+0.4As content exceeds five times the B content, p and n inversion occurs in the silicon single crystal, which is not preferable.
上記の関係はこれらの不純物の１度の絶対値によらず同
一である。ただし、石英ルツボのＢ含有量が０．２２Ｐ
ＩＩ＋以上の場合には、Ｐ＋０．４Ａｓを加えると不純
物（Ｂ ＋ Ｐ ＋Ａｓ）の合計量が多量にシリコン単
結晶中に混入することになって、他の半導体特性を損な
う虞れがあるので好ましくない。The above relationship is the same regardless of the absolute value of these impurities. However, the B content in the quartz crucible is 0.22P.
In the case of II+ or more, adding P+0.4As will cause a large amount of the total amount of impurities (B + P + As) to be mixed into the silicon single crystal, which may impair other semiconductor properties, so it is preferable. do not have.
本発明の石英ルツボは従来のルツボに較べ原料石英の精
製コストを削減し、かつ引上げるシリコン単結晶の特性
に対するルツボの影響が無視できるので、ドーパントを
添加する場合の添加量の調整も容易であり、高抵抗の良
好な特性を有するシリコン単結晶を得ることができる偏
れた石英ルツボである。The quartz crucible of the present invention reduces the cost of refining raw quartz compared to conventional crucibles, and the effect of the crucible on the properties of the silicon single crystal to be pulled can be ignored, making it easy to adjust the amount of dopant added. It is a biased quartz crucible that can obtain silicon single crystals with good properties of high resistance.
以下実施例および比較例により本発明を具体的に説明す
る。The present invention will be specifically explained below using Examples and Comparative Examples.
（実施例１〜４および比較例１〜３）
Ｂの含有量の比較的多い石英粉に、ＰおよびＡｓの含有
量が比較的多い石英粉を混合して１表に示すＢ、Ｐおよ
びＡｓを含有する石英ルツボ（直径１６インチ）を作製
した。Ｂ、ＰおよびＡｓ以外の主な不純物はいずれのル
ツボにおいても、ＡＱ約６ ｐｐｍ、Ｆｅ約０．４ｐｐ
ｍ、 Ｎａ＃Ｊ０．４ｐｐｍ、Ｋ約０．３ｐｐｍ、 Ｃ
ａ約０．５ｐｐｍであり、各ルツボを用いて引上げたシ
リコン単結晶の特性に及ぼすこれらの不純物の影響は少
ない。(Examples 1 to 4 and Comparative Examples 1 to 3) Quartz powder with a relatively high content of B is mixed with quartz powder with a relatively high content of P and As to produce B, P, and As shown in Table 1. A quartz crucible (16 inches in diameter) containing the following was prepared. The main impurities other than B, P and As in all crucibles are AQ approximately 6 ppm and Fe approximately 0.4 ppm.
m, Na#J0.4ppm, K approx. 0.3ppm, C
a is about 0.5 ppm, and the influence of these impurities on the characteristics of silicon single crystals pulled using each crucible is small.
原料シリコン４０ｋｇを各ルツボに投入して溶解し、シ
リコン単結晶を引上げた。引上げた単結晶はいずれの場
合も約３０ｋｇで、投入したシリコンの約７５％であっ
た。得られたシリコン単結晶の頂部（表中「上」で表わ
す）、中部（表中ｒ中」で表わす）および底部（表中「
下」で表わす）から得たウェハーの結晶タイプと比抵抗
を測定して表に示した。40 kg of raw silicon was put into each crucible and melted, and a silicon single crystal was pulled. In each case, the pulled single crystal weighed approximately 30 kg, which accounted for approximately 75% of the silicon input. The top (indicated by "upper" in the table), middle part (indicated by "r" in the table) and bottom (indicated by "r" in the table) of the obtained silicon single crystal
The crystal type and resistivity of the wafers obtained from the wafers (denoted below) were measured and shown in the table.
表に示されるように、Ｂに対してＰ、Ａｓの含有量が少
ないと、シリコン単結晶の比抵抗が小さく（比較例１）
、一方、Ｂに対してＰ、Ａｓの含有量が多すぎると、シ
リコン単結晶がｎ型に反転する（比較例２．３）。As shown in the table, when the content of P and As is small relative to B, the specific resistance of the silicon single crystal is small (Comparative Example 1)
On the other hand, if the content of P and As is too large relative to B, the silicon single crystal is inverted to n-type (Comparative Example 2.3).
Claims (1)
５族元素がｐ型半導体を形成する第３族元素の０．５〜
５倍含有されているシリコン単結晶引き上げ用石英ルツ
ボ。 ２、リンとヒ素の総量（Ｐ＋０．４Ａｓ）が、ホウ素の
含有量の０．５〜４倍である第１請求項の石英ルツボ。[Scope of Claims] 1. In a silicon semiconductor, the Group 5 element forming the n-type semiconductor is 0.5 to 0.5 to 0.5 to the Group 3 element forming the p-type semiconductor.
A quartz crucible for pulling silicon single crystals containing 5 times the amount of silicon. 2. The quartz crucible according to claim 1, wherein the total amount of phosphorus and arsenic (P+0.4As) is 0.5 to 4 times the boron content.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1278734A JPH07102999B2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1278734A JPH07102999B2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03141189A true JPH03141189A (en) | 1991-06-17 |
| JPH07102999B2 JPH07102999B2 (en) | 1995-11-08 |
Family
ID=17601462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1278734A Expired - Lifetime JPH07102999B2 (en) | 1989-10-27 | 1989-10-27 | Quartz crucible for pulling silicon single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07102999B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6296388A (en) * | 1985-10-23 | 1987-05-02 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS62226890A (en) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | Single crystal and its production |
-
1989
- 1989-10-27 JP JP1278734A patent/JPH07102999B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6296388A (en) * | 1985-10-23 | 1987-05-02 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS62226890A (en) * | 1986-03-27 | 1987-10-05 | Komatsu Denshi Kinzoku Kk | Single crystal and its production |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07102999B2 (en) | 1995-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2584070B1 (en) | Method of manufactoring a p-type silicon single crystal | |
| EP2418173A2 (en) | Method for controlling resistivity in ingots made of compensated feedstock silicon | |
| US20210071315A1 (en) | Methods for forming single crystal silicon ingots with improved resistivity control | |
| US7202146B2 (en) | Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby | |
| US20070227440A1 (en) | Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof | |
| KR20190043626A (en) | Compound semiconductor and method for manufacturing compound semiconductor single crystal | |
| US7220308B2 (en) | Manufacturing method of high resistivity silicon single crystal | |
| JPH03141189A (en) | Quartz crucible for lifting silicon single crystal | |
| JP3931956B2 (en) | Method for growing silicon single crystal | |
| JP2562579B2 (en) | Single crystal manufacturing method | |
| JPH08756B2 (en) | Inorganic compound single crystal growth method | |
| JP2527718B2 (en) | Sealant for liquid capsule pulling method and single crystal growth method | |
| CN86100854B (en) | Method for making heavy sb-admixed silicon monocrystal | |
| JP2593148B2 (en) | Method for growing single crystal of compound semiconductor | |
| JPH0544438B2 (en) | ||
| RU2014372C1 (en) | Process for germanium single crystal growth | |
| CA1214381A (en) | Method of growing gallium arsenide crystals using boron oxide encapsulant | |
| CA1271393A (en) | Method of manufacturing a semi-insulating single crystal of gallium indium arsenide | |
| JPH01215799A (en) | Semi-insulating gaas compound semiconductor single crystal and production thereof | |
| JPS61155296A (en) | Gallium arsenide single crystal having low dislocation density and its growing method | |
| JP3451658B2 (en) | Growth method of mixed crystal semiconductor single crystal | |
| SU970906A1 (en) | Semiconductor material for microwave transistors | |
| JPS6240844B2 (en) | ||
| JPS6389496A (en) | Production of compound semiconductor | |
| JPS6259886B2 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081108 Year of fee payment: 13 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091108 Year of fee payment: 14 |
|
| EXPY | Cancellation because of completion of term |