JPH03141099A - Memory integrated circuit - Google Patents

Memory integrated circuit

Info

Publication number
JPH03141099A
JPH03141099A JP1278247A JP27824789A JPH03141099A JP H03141099 A JPH03141099 A JP H03141099A JP 1278247 A JP1278247 A JP 1278247A JP 27824789 A JP27824789 A JP 27824789A JP H03141099 A JPH03141099 A JP H03141099A
Authority
JP
Japan
Prior art keywords
address
generated
access
register
bus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1278247A
Other languages
Japanese (ja)
Inventor
Shigeru Oshima
茂 大島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Software Shikoku Ltd
Original Assignee
NEC Software Shikoku Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Software Shikoku Ltd filed Critical NEC Software Shikoku Ltd
Priority to JP1278247A priority Critical patent/JPH03141099A/en
Publication of JPH03141099A publication Critical patent/JPH03141099A/en
Pending legal-status Critical Current

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  • Static Random-Access Memory (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To eliminate the increase of input/output pins by setting successively an initial value of an address to an address generating means at every bit group through a bidirectional bus means, and executing successively an access to an access address from this initial address. CONSTITUTION:A superordinate address is set to a data bus 3, and also, a load pulse 4 is generated. Accordingly, this superordinate address is stored in an address register 30 through a bidirectional driver 20. Subsequently, a subordinate address is set to the bus 3, and also, a load pulse 5 is generated and stored in an address register 40 through the driver 20. Thereafter, write data is set to the bus 3 and a write strobe 2 is generated, and the write data is written in an address shown by the registers 30, 40 of a RAM 10 through the driver 20. Subsequently, when an increment pulse 6 is inputted, the contents of the register 40 are brought to increment, and the write data corresponding to the next address increased by 1 from an initial address is written. When a carry 7 is generated from the register, a write access can be executed succes sively and continuously.

Description

【発明の詳細な説明】 技術分野 本発明はメモリ集積回路に関し、特に連続(シーケンシ
ャル)アクセス可能なメモリ集積回路に関するものであ
る。
TECHNICAL FIELD The present invention relates to memory integrated circuits, and more particularly to sequentially accessible memory integrated circuits.

従来技術 書込み/読出し可能なランダムアクセスメモリ(RAM
)においては、データバスとアドレスバスとが互いに1
対1に独立しているものや、データバスは1対1に独立
しているが、アドレスバスは1対1に独立してはおらず
アドレスバスにアドレスデータを複数回に分割して送出
するような構造のものがある。
Prior Art Writable/readable random access memory (RAM)
), the data bus and address bus are
Although data buses are independent on a one-to-one basis, address buses are not independent on a one-to-one basis, and address data is divided into multiple times and sent to the address bus. There are some structures.

かかる従来のRAMでは、記憶容量が増大するにつれて
アドレス信号のためのI10ビンが増加し、メモリ集積
回路の入出力ピン数が増大するという欠点がある。
Such conventional RAM has the disadvantage that as the storage capacity increases, the number of I10 bins for address signals increases, and the number of input/output pins of the memory integrated circuit increases.

発明の目的 そこで、本発明はこの様な従来のものの欠点を除去すべ
くなされたものであって、その目的とするところは、記
憶容量が増大しても入出力ビンの増大がないメモリ集積
回路を提供することにある。
OBJECT OF THE INVENTION Therefore, the present invention has been made to eliminate the drawbacks of the conventional ones, and its purpose is to provide a memory integrated circuit in which the number of input/output bins does not increase even when the storage capacity increases. Our goal is to provide the following.

発明の構成 本発明によれば、情報記憶用のランダムアクセスメモリ
手段と、このメモリ手段と接続され外部とのデータ授受
をなす双方向バス手段と、複数のビットグループに分割
されたアドレスがこのビットグループ毎にセットされる
共に、その内容が順次インクリメント自在なアドレス発
生手段とを含み、前記メモリ手段に対する連続アクセス
指示に応答して、その連続アクセス時のアドレスの初期
値を前記双方向バス手段を介して前記ビットグループ毎
に前記アドレス発生手段へ順次セットし、この初期アド
レスから順次アクセスアドレスをインクリメントしつつ
アクセスするようにしたことを特徴とするメモリ集積回
路が得られる。
Structure of the Invention According to the present invention, there is provided a random access memory means for storing information, a bidirectional bus means connected to the memory means for exchanging data with the outside, and an address divided into a plurality of bit groups. address generating means which is set for each group and whose contents can be sequentially incremented; and in response to a continuous access instruction to the memory means, an initial value of the address at the time of continuous access is generated by the bidirectional bus means. There is obtained a memory integrated circuit characterized in that each bit group is sequentially set in the address generating means via the bit group, and access is performed while sequentially incrementing the access address from this initial address.

実施例 以下に図面を参照して本発明の詳細な説明する。Example The present invention will be described in detail below with reference to the drawings.

図は本発明の実施例のブロック図である。メモリ集積回
路100はデータの書込み/読出しが可能なRAMl0
と、このRAMに接続されて外部とデータバス3を介し
てデータ授受を行う双方向ドライバ20と、双方向ドラ
イバ20を介して入力されたアドレスの上位及び下位ビ
ットの各グループを、ロードパルス4及び5に応答して
セット自在なアドレスレジスタ30及び40とを含んで
いる。
The figure is a block diagram of an embodiment of the invention. The memory integrated circuit 100 is a RAM l0 in which data can be written/read.
A bidirectional driver 20 is connected to this RAM and exchanges data with the outside via the data bus 3. Each group of upper and lower bits of the address input via the bidirectional driver 20 is processed by a load pulse 4. and address registers 30 and 40, which can be freely set in response to the address registers 30 and 5.

下位ビットグループに対応するアドレスレジスタ40は
、インクリメントパルス6の発生毎に、セットされた初
期アドレスを順次インクリメントし、キャリイアの発生
により上位ビットグループに対応するアドレスレジスタ
3oがインクリメントされるように構成されている。
The address register 40 corresponding to the lower bit group is configured to sequentially increment the set initial address every time the increment pulse 6 is generated, and the address register 3o corresponding to the upper bit group is incremented by the generation of a carrier. ing.

RAMl0はリードストローブ1により読出し11能と
なり、またライトストローブ2により書込み可能となる
ものである。
The RAM 10 becomes readable with read strobe 1 and writable with write strobe 2.

かかる構成とされたメモリ集積回路100の動作は以下
の如くである。データバス3に上位アドレスがセットさ
れると共に、ロードパルス4が発生される。よって、双
方向ドライバ20を介してこの上位アドレスがアドレス
レジスタ3oに初期値として格納される。
The operation of the memory integrated circuit 100 having such a configuration is as follows. An upper address is set on the data bus 3, and a load pulse 4 is generated. Therefore, this upper address is stored as an initial value in the address register 3o via the bidirectional driver 20.

次に、データバス3に下位アドレスがセットされると共
に、ロードパルス5が発生される。よって、双方向ドラ
イバ20を介してこの下位アドレスがアドレスレジスタ
40に初期値として格納される。
Next, a lower address is set on the data bus 3, and a load pulse 5 is generated. Therefore, this lower address is stored in the address register 40 as an initial value via the bidirectional driver 20.

しかる後に、データバス3にライトデータがセットされ
てライトストローブ2が発生される。これにより双方向
ドライバ20を介してRAMl0の、アドレスレジスタ
30及び40により示されるアドレスにライトデータが
書込まれる。続0てインクリメントパルス6が人力され
ると、下位アドレスビットのアドレスレジスタ40の内
容力(インクリメントされ、初期アドレスから1だけ増
加した次のアドレスに対応するライトデータが書込まれ
る。
After that, write data is set on data bus 3 and write strobe 2 is generated. As a result, write data is written via the bidirectional driver 20 to the address indicated by the address registers 30 and 40 in the RAM 10. Subsequently, when an increment pulse 6 is input manually, the content of the address register 40 of the lower address bit is incremented, and write data corresponding to the next address increased by 1 from the initial address is written.

このアドレスレジスタ40からキャイ7が発生されると
、上位アドレスビ・ソトのアドレスレジスタ30がイン
クリメントされるから、順次連続したライトアクセスが
可能となる。
When the signal 7 is generated from the address register 40, the address register 30 of the upper address bit/soto is incremented, so that sequential write access becomes possible.

連続したリードアクセスの場合には、リードストローブ
1を発生しておき、インクリメントパルス6を順次発生
するようにすれば、RAMl0の内容が連続して読出さ
れ、双方向ドライバ20を介してデータバス3へ出力可
能となるのである。
In the case of continuous read access, if the read strobe 1 is generated and the increment pulse 6 is generated sequentially, the contents of the RAM 10 are read out continuously, and the data bus 3 is accessed via the bidirectional driver 20. This makes it possible to output to.

尚、上記実施例では、アクセスアドレスを上位と下位の
2つのビットグループに分割した場合を示したが、これ
に限定されず、データバスのビット幅に応じて複数に分
割し、それに対応してアドレスレジスタを設ければ良い
ものである。
Although the above embodiment shows the case where the access address is divided into two bit groups, upper and lower, the access address is not limited to this, and it is divided into multiple groups according to the bit width of the data bus, and the corresponding It is sufficient to provide an address register.

発明の効果 上述した如く、本発明によれば、メモリ集積回路をRA
Mディスクや電子ディスク等のシーケンシャル書込み/
読出し機能として使用する場合、記憶容量が増大しても
、集積回路の人出力ビンが増加しないという効果がある
Effects of the Invention As described above, according to the present invention, the memory integrated circuit is
Sequential writing to M disks, electronic disks, etc./
When used as a read function, it has the advantage that the integrated circuit's output bins do not increase even if the storage capacity increases.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例の回路図である。 主要部分の符号の説明 10・・・・・・RAM 30゜ 2 0・・・・・・双方向ドライバ 0・・・・・・アドレスレジスタ The figure is a circuit diagram of an embodiment of the present invention. Explanation of symbols of main parts 10...RAM 30° 2 0...Bidirectional driver 0...Address register

Claims (1)

【特許請求の範囲】[Claims] (1)情報記憶用のランダムアクセスメモリ手段と、こ
のメモリ手段と接続され外部とのデータ授受をなす双方
向バス手段と、複数のビットグループに分割されたアド
レスがこのビットグループ毎にセットされる共に、その
内容が順次インクリメント自在なアドレス発生手段とを
含み、前記メモリ手段に対する連続アクセス指示に応答
して、その連続アクセス時のアドレスの初期値を前記双
方向バス手段を介して前記ビットグループ毎に前記アド
レス発生手段へ順次セットし、この初期アドレスから順
次アクセスアドレスをインクリメントしつつアクセスす
るようにしたことを特徴とするメモリ集積回路。
(1) Random access memory means for storing information, bidirectional bus means connected to this memory means for exchanging data with the outside, and addresses divided into a plurality of bit groups are set for each bit group. Both of them include address generating means whose contents can be sequentially incremented, and in response to a continuous access instruction to the memory means, the initial value of the address at the time of continuous access is generated for each of the bit groups via the bidirectional bus means. The memory integrated circuit is characterized in that the addresses are sequentially set in the address generating means, and the access address is sequentially incremented from the initial address and accessed.
JP1278247A 1989-10-25 1989-10-25 Memory integrated circuit Pending JPH03141099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1278247A JPH03141099A (en) 1989-10-25 1989-10-25 Memory integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1278247A JPH03141099A (en) 1989-10-25 1989-10-25 Memory integrated circuit

Publications (1)

Publication Number Publication Date
JPH03141099A true JPH03141099A (en) 1991-06-17

Family

ID=17594673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1278247A Pending JPH03141099A (en) 1989-10-25 1989-10-25 Memory integrated circuit

Country Status (1)

Country Link
JP (1) JPH03141099A (en)

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