JPH03139523A - Amphoteric polyamide and thin film comprising the same - Google Patents
Amphoteric polyamide and thin film comprising the sameInfo
- Publication number
- JPH03139523A JPH03139523A JP27770089A JP27770089A JPH03139523A JP H03139523 A JPH03139523 A JP H03139523A JP 27770089 A JP27770089 A JP 27770089A JP 27770089 A JP27770089 A JP 27770089A JP H03139523 A JPH03139523 A JP H03139523A
- Authority
- JP
- Japan
- Prior art keywords
- group
- thin film
- amphoteric
- film
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002647 polyamide Polymers 0.000 title claims abstract description 37
- 239000004952 Polyamide Substances 0.000 title claims abstract description 35
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 11
- 125000003118 aryl group Chemical group 0.000 claims abstract description 6
- 125000005843 halogen group Chemical group 0.000 claims abstract description 6
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 36
- 125000004432 carbon atom Chemical group C* 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims description 6
- 125000003277 amino group Chemical group 0.000 claims description 6
- 230000001186 cumulative effect Effects 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 6
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 5
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 5
- -1 nitro- Chemical class 0.000 abstract description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 239000012528 membrane Substances 0.000 description 9
- 230000009102 absorption Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical group C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- FSAJWMJJORKPKS-UHFFFAOYSA-N octadecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C=C FSAJWMJJORKPKS-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- KBLZUSCEBGBILB-UHFFFAOYSA-N 2,2-dimethylthiolane 1,1-dioxide Chemical compound CC1(C)CCCS1(=O)=O KBLZUSCEBGBILB-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- DZLUPKIRNOCKJB-UHFFFAOYSA-N 2-methoxy-n,n-dimethylacetamide Chemical compound COCC(=O)N(C)C DZLUPKIRNOCKJB-UHFFFAOYSA-N 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001717 carbocyclic compounds Chemical class 0.000 description 1
- 125000002837 carbocyclic group Chemical group 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 239000012154 double-distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 125000005472 straight-chain saturated fatty acid group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は両性ポリアミドおよびそれから成膜された薄膜
に関する。さらに詳しくは、ラングミュア・プロジェッ
ト法(以下、LB法という)で成膜しうるように修飾さ
れた両性ポリアミドおよびそれを用いてLB法により成
膜された単分子膜または累積膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to amphoteric polyamides and thin films formed therefrom. More specifically, the present invention relates to an amphoteric polyamide modified so that it can be formed by the Langmuir-Prodgett method (hereinafter referred to as the LB method), and a monomolecular film or a cumulative film formed using the same by the LB method.
[従来の技術・発明が解決しようとする課題]すでに1
930年代、炭素数16〜22ぐらいの脂肪酸が水面」
二に単分子膜をつくり、それをU買上に累積しうろこと
がラングミュアとプロジェットにより見出されているが
、この累積膜の応用について検討が行なわれはじめたの
は最近のことである。しかし、直鎖飽和脂肪酸のラング
ミュア・プロジェット膜(以下、LB膜という)は、実
際に応用するには耐熱性や機械的強度が充分でなく、そ
のままでは使用しえないという問題がある。[Problems to be solved by conventional technology/inventions] Already 1
In the 930s, fatty acids with about 16 to 22 carbon atoms were on the water surface.
Second, Langmuir and Prodgett discovered that it is possible to create a monomolecular film and accumulate it on a U-layer, but it is only recently that studies have begun to consider the application of this cumulative film. However, Langmuir-Prodgett membranes (hereinafter referred to as LB membranes) made of straight-chain saturated fatty acids have a problem in that they do not have sufficient heat resistance or mechanical strength for practical applications, and cannot be used as they are.
これらの問題を改善するものとして、たとえばω−トリ
コセン酸、ω−へブタデセン酸またはα−オクタデシル
アクリル酸などの不飽和脂肪酸や、ステアリン酸ビニル
やオクタデシルアクリレートなどの不飽和の脂肪酸エス
テルなどから形成された膜を重合させた膜が研究されて
いるが、耐熱性などが充分とはいえない。To improve these problems, products formed from unsaturated fatty acids such as ω-tricosenic acid, ω-hebutadecenoic acid or α-octadecyl acrylate, and unsaturated fatty acid esters such as vinyl stearate and octadecyl acrylate, etc. Research has been conducted on films made by polymerizing these films, but their heat resistance and other properties are not sufficient.
一方、耐熱性フィルムとしてポリイミドフィルムがある
が、スピンコード法などの方法によるばあいには、膜厚
がせいぜい1000Å以上、通常は1証以上のものしか
えられず、1000人未満の膜厚でピンホールのない耐
熱性薄膜を作製するのは非常に困難である。On the other hand, there is a polyimide film as a heat-resistant film, but when using methods such as spin-coding, the film thickness is at most 1000 Å or more, and usually only 100 Å or more can be obtained; It is extremely difficult to create a heat-resistant thin film without holes.
本発明者らは耐熱性や接着力などの機械的特性や耐薬品
性などが改産された耐熱性の超薄膜を提供しうる材料に
ついてすでに出願している(特開昭[12−12931
7号公報)。しかし、この材料からの薄膜は電気的には
ほとんどが絶縁性であって、絶縁膜などの用途以外への
応用が難しいという問題がある。The present inventors have already filed an application for a material that can provide a heat-resistant ultra-thin film with improved mechanical properties such as heat resistance and adhesive strength, and chemical resistance (Japanese Patent Application Laid-Open No. 12-12931
Publication No. 7). However, most thin films made from this material are electrically insulating, and there is a problem in that it is difficult to apply them to purposes other than insulating films.
[課題を解決するための手段]
本発明は、ポリアミック酸単位に特別なジアミン成分を
用いることによって前記問題が解決されることが見出さ
れたことによりなされたものであり、一般式(1):
は炭素数12〜30、好ましくは14〜22の基である
)で表わされる繰返し単位を主体とする両性ポリアミド
および該両性ポリアミドをラングミュア・プロジェット
法により基板上に成膜した薄膜(単分子膜または累積膜
)に関する。[Means for Solving the Problems] The present invention has been made based on the discovery that the above-mentioned problems can be solved by using a special diamine component in the polyamic acid unit. : is a group having 12 to 30 carbon atoms, preferably 14 to 22 carbon atoms. membrane or cumulative membrane).
[実施例コ
本発明の両性ポリアミドは、一般式(1):(式中、R
1は少なくとも2個の炭素原子を含有する4価の基、R
2は
R3R4R5およびR6は脂肪族、環状脂肪族もしくは
芳香族(これらが相互に組合わさっていてもよい)の炭
素数1〜30の1価の基(これらの基がハロゲン原子、
ニトロ基、アミノ基、シアノ基、メトキシ基、アセトキ
シ基で置換されていてもよい)または水素原子であり、
R3R4R5およびR6の少なくとも1個で表わされる
繰返し単位を主体とする両性ポリアミドであって、その
数平均分子量は通常2.000〜300,000、好ま
しくはto、000〜150.000のものである。数
平均分子量が2,000〜300.000の範囲をはず
れると、えられた薄膜の強度が低すぎたり、成膜時の粘
度が高くなりすぎて膜の作製がうまくいきにくくなるな
どの傾向が生ずる。[Example] The amphoteric polyamide of the present invention has the general formula (1): (wherein R
1 is a tetravalent group containing at least 2 carbon atoms, R
2 is R3R4R5 and R6 are aliphatic, cycloaliphatic or aromatic (these may be combined with each other) monovalent group having 1 to 30 carbon atoms (these groups are halogen atoms,
(optionally substituted with a nitro group, amino group, cyano group, methoxy group, acetoxy group) or a hydrogen atom,
It is an amphoteric polyamide mainly composed of a repeating unit represented by at least one of R3R4R5 and R6, and its number average molecular weight is usually 2.000 to 300,000, preferably to, 000 to 150,000. If the number average molecular weight is outside the range of 2,000 to 300,000, the strength of the obtained thin film will be too low, or the viscosity during film formation will become too high, making it difficult to successfully prepare the film. arise.
一般式(1)における R1は少なくとも2個の炭素原
子を金白゛する、好ましくは5〜20個の炭素原rを含
有する4価の基であり、芳香族の基であってもよく、脂
肪族の基であってもよく、環状脂肪族の基であってもよ
く、これらの基が組合わさった基であってもよく、さら
にはこれらの基が脂肪族、環状脂肪族もしくは芳香族(
これらが相ILに組合わさっていてもよい)の炭素数1
〜30の1価の基(これらの基がハロゲン原子、ニトロ
基、アミノ基、シアノ基、メトキシ基、アセトキシ基な
どの基で置換されていてもよい)または接話が−0−−
COO−−NIICO−1−CO−1−9−−C3S−
−NllC9−1−CS−などに結合した基で置換され
誘導体となった基であってもよい。しかし、R1が少な
くとも6個の炭素数を有するベンゼノイド不飽和によっ
て特徴づけられた基であるばあいには、耐熱性、耐薬品
性および機械的特性などの点から好ましい。R1 in the general formula (1) is a tetravalent group containing at least 2 carbon atoms, preferably 5 to 20 carbon atoms, and may be an aromatic group, It may be an aliphatic group, a cycloaliphatic group, or a combination of these groups; (
These may be combined in the phase IL) with a carbon number of 1
-30 monovalent groups (these groups may be substituted with groups such as halogen atoms, nitro groups, amino groups, cyano groups, methoxy groups, acetoxy groups) or -0--
COO--NIICO-1-CO-1-9--C3S-
It may also be a group substituted with a group bonded to -NllC9-1-CS- or the like to become a derivative. However, when R1 is a group characterized by benzenoid unsaturation having at least 6 carbon atoms, it is preferable from the viewpoint of heat resistance, chemical resistance, mechanical properties, etc.
前記のごときR1の具体例としては、たとえわされる繰
返し単位において
などがあげられる。Specific examples of R1 as described above include those in the analogous repeating unit.
本明細書にいうベンゼノイド不飽和とは、炭素環式化合
物の構造に関してキノイド構造と対比して用いられる術
語で、普通の芳香族化合物に含まれる炭素環と同じ形の
構造をいう。The term "benzenoid unsaturation" as used herein is a term used in contrast to a quinoid structure regarding the structure of a carbocyclic compound, and refers to a structure having the same shape as a carbocyclic ring contained in ordinary aromatic compounds.
結合する手の位置にはとくに限定はないが、4個の結合
手の各2個づつがR1を構成する隣接する2個の炭素原
子に存在するばあいには、両性ポリアミドを用いて形成
した膜などをポリイミド化する際に5員環を形成しやす
く、イミド化しやすいため好ましい。There is no particular limitation on the position of the bonding hands, but if two of each of the four bonding hands are present on two adjacent carbon atoms constituting R1, it is possible to form the bond using an amphoteric polyamide. It is preferable because it is easy to form a 5-membered ring when polyimidizing a film or the like, and it is easy to imidize.
前記のごときR1の好ましい具体例としては、たとえば
p−キノイ ド ベンゼノイド不飽和R1
の4個の結合手、すなわち一般式(1)で表である。Preferred specific examples of R1 as described above include, for example, p-quinoid benzenoid unsaturated R1
This is a table of the four bonds, that is, the general formula (1).
アン トラキノ ン基に存在する 2つの結 合手の位置を具体的に示すと などとなる。Ann Trachino present in the group two connections Specifically showing the position of the hand etc.
2
の10〜20%程度以下の範囲であればつぎのような2
価の基を
2
のかわりに有する繰返
し単位を用いてもよい。If it is within the range of 10 to 20% of 2, the following 2
A repeating unit having a valence group in place of 2 may also be used.
たとえば
2
は2価のアントラキノン基である
(式中、
7
は
+ CH2ト「:]
(前記式中の
6
および
9
はいずれも炭素数
→CH2す「−10
(CH2)4− CI −(CH2)2−1〜30のア
ルキル基またはアリール基))
CH30
(C)12)η
Cl1(CH3)
−(CH2)3−CI(CH2) 2
(CH2)3−0−(CH2) 2
−O−(CH2)s
C1(3
CH3
113
CH3
s R5
e R5
などである。For example, 2 is a divalent anthraquinone group (in the formula, 7 is +CH2) (6 and 9 in the above formula are both carbon numbers → CH2) -10 (CH2)4-CI-(CH2 )2-1 to 30 alkyl group or aryl group)) CH30 (C)12)η Cl1(CH3) -(CH2)3-CI(CH2)2(CH2)3-0-(CH2)2-O- (CH2)s C1(3 CH3 113 CH3 s R5 e R5, etc.).
一般式(1)におけるR3 R4R5R6は脂肪族
、環状脂肪族、芳香族(それらが相互に組合わさってい
てもよい)の炭素数1〜30、好ましくは1〜22の1
価の基(それらの基がハロゲン原子、ニトロ基、アミノ
基、シアノ基、メトキシ基、アセトキシ基などで置換さ
れ、誘導体となっていてもよい)または水素原子である
。In general formula (1), R3 R4R5R6 is an aliphatic, cycloaliphatic, or aromatic group having 1 to 30 carbon atoms, preferably 1 to 22 carbon atoms.
A valent group (these groups may be substituted with a halogen atom, a nitro group, an amino group, a cyano group, a methoxy group, an acetoxy group, etc. to form a derivative) or a hydrogen atom.
なお一般式(1)において、R3R4R5およびR6は
いずれも一般式(2):
%式%
(式中、RI R2は前記と同じ)で表わされるポ
リアミック酸単位に疎水性を付与し、安定な凝縮膜をう
るために導入される基であり、R3R4R5R6のうち
の少なくとも1個、好ましくは2個が炭素原子数12〜
30、好ましくは14〜22の前記の基であることが、
水面上に安定な凝縮膜を形成し、それをLB法により基
板上に累積させるために必要である。In addition, in general formula (1), R3R4R5 and R6 both give hydrophobicity to the polyamic acid unit represented by general formula (2): % formula % (wherein RI R2 is the same as above), resulting in stable condensation. It is a group introduced to obtain a film, and at least one, preferably two of R3R4R5R6 has 12 to 12 carbon atoms.
30, preferably 14 to 22 of the above groups,
This is necessary to form a stable condensed film on the water surface and accumulate it on the substrate by the LB method.
前記のごとき R3R4R5R6の具体はいずれも12
〜30、好ましくは14〜22)などがあげられる。本
発明の両性ポリアミドがLB法で製膜されるためには、
前記の基はCII s(CH2福可であられされる直鎖
アルキル基であるのが、性能的にもコスト的にも最も望
ましい。また、前述のごときハロゲン原子、ニトロ基、
アミノ基、シアノ基、メトキシ基、アセトキシ基などは
必須ではないが、フッ素原子を導入すると疎水性が水素
原子とくらべて飛躍的に改善されるので、フッ素原子を
含むものを使用するのは好ましい。The specifics of R3R4R5R6 as mentioned above are all 12
-30, preferably 14-22). In order for the amphoteric polyamide of the present invention to be formed into a film by the LB method,
The above-mentioned group is most preferably a linear alkyl group formed by CII s (CH2Fukuka) in terms of performance and cost.
Although amino groups, cyano groups, methoxy groups, acetoxy groups, etc. are not essential, it is preferable to use those containing fluorine atoms, as the introduction of fluorine atoms dramatically improves hydrophobicity compared to hydrogen atoms. .
R3、R4、R5,R6のうちの2個が水素原子のばあ
いの本発明の両性ポリアミドの繰返し単位の具体例とし
ては、一般式(3):(式中、RI R2R3R4
は前記と同じ、ただしR3およびR4は炭素数12〜3
0の基である)で表わされる繰返し単位や、一般式(4
);一般式(4)で表わされるものであるばあいには、
製造が容易である、コスト的にも安価であるなどの点か
ら好ましい。Specific examples of repeating units of the amphoteric polyamide of the present invention in which two of R3, R4, R5, and R6 are hydrogen atoms include general formula (3): (wherein, RI R2R3R4
is the same as above, except that R3 and R4 have 12 to 3 carbon atoms.
0 group) or the general formula (4
); if it is represented by general formula (4),
This is preferable because it is easy to manufacture and inexpensive.
一般式(1)、(3)、(41で示される繰返し単位を
有する本発明の両性ポリアミドの具体例としては、たと
えば
(式中、RI R2R5R6は前記と同じ、ただし
R5およびR6は炭素数12〜30の基)で表わされる
繰返し単位などがあげられる。本発明の両性ポリアミド
の繰返し単位が一般式(3)や(式中のR3
CH3(CH2) n −
Cl5(CH2) 17−
CF5(CH2) +s −
は、CH3−1
CH3(CH2) s −
R4の具体例としては1
、Cl13(CH2) +3− 、CH3(CH2)
+s −1CH3(CH2) +9− 、C)13(C
H2) 2+ −など、R5R6の具体例として
CH3(CH2) 2− 、CH3(CH2) 3−な
ど)、
および
(式中のR3R4の具体例としては、
CH2(CH2)I+ −、CTo(C)I2)+3−
、CHx(C)12)+s −C1(3(C142)
+7− 、C113(C)h)+s −、CH3(CH
2)2+ −CF3(ClI2> +s−など)などの
繰返し単位を含むものなどがあげられる。式中の−は異
性を表わす。Specific examples of the amphoteric polyamides of the present invention having repeating units represented by general formulas (1), (3), and (41) include, for example, The repeating unit of the amphoteric polyamide of the present invention is represented by the general formula (3) or (in the formula, R3 CH3 (CH2) n - Cl5 (CH2) 17- CF5 (CH2 ) +s - is CH3-1 CH3(CH2) s - Specific examples of R4 are 1, Cl13(CH2) +3-, CH3(CH2)
+s -1CH3(CH2) +9- ,C)13(C
H2) 2+ -, specific examples of R5R6 include CH3(CH2) 2-, CH3(CH2) 3-, etc.), and (specific examples of R3R4 in the formula include CH2(CH2)I+ -, CTo(C) I2)+3-
, CHx(C)12)+s -C1(3(C142)
+7-, C113(C)h)+s-, CH3(CH
2) Examples include those containing repeating units such as 2+ -CF3 (ClI2> +s-, etc.). - in the formula represents isomerism.
異性とは、たとえば一般式:
に基づき説明すると、上式は
の2つの式を1つの式で表わしたものであり、このよう
なばあいに異性を表わす−が用いられる。Isomerism is explained based on, for example, the general formula: The above formula represents the two formulas in one formula, and in such a case, - is used to represent isomerism.
本明細書における異性は、(ω式、山)式で表わされる
部分が単独で含有されているばあい、(a)式、■式で
表わされる部分が共存するばあいのいずれのばあいをも
表わす。In this specification, isomerism refers to either a case where a moiety represented by the (ω formula, mountain) formula is contained alone or a case where a moiety represented by the formula (a) or the formula (■) coexists. represent
一般式(1)で表わされる繰返し単位をもつ両性ポリア
ミドは、単一の繰返し単位からなっていてもよく、異な
った繰返し単位からなる共重合体であってもよい。The amphoteric polyamide having a repeating unit represented by the general formula (1) may be composed of a single repeating unit, or may be a copolymer composed of different repeating units.
一般式(1)において、R1−R6の少なくとも1つが
先に説明したR1 、 Reのそれぞれの具体例からえ
らばれた少なくとも2種の基にすることによって種々の
共重合体が提供される。In the general formula (1), various copolymers can be provided by using at least one of R1 to R6 as at least two groups selected from the above-mentioned specific examples of R1 and Re.
の2種が選ばれると、両性ポリアミドの繰返し単位は一
般式;
(式中、x、yは比率をあられし、0<X<1、Q<y
<1、x+y=1である)で表わされる。When two types are selected, the repeating unit of the amphoteric polyamide has the general formula;
<1, x+y=1).
で表わされる。なお、このばあいのyは、前述のように
、0.1〜0.2程度以下の範囲である。It is expressed as Note that y in this case is in the range of about 0.1 to 0.2, as described above.
以上の例はほんの一例である。また、R’R4R5R6
についても多数の例をあげつるが、繰返し単位として記
載すると、たとえば数式:
%式%
前記のごとき本発明の両性ポリアミドは、−般にN、N
−ジメチルアセトアミド、N、N−ジメチルホルムアミ
ド、N、N−ジエチルホルムアミド、ヘキサメチルホス
ホルアミドなどの有機極性溶剤に溶、前記有機極性溶剤
とクロロホルムなどの通常の有機溶剤などの混合溶剤に
溶、通常の有機溶剤、たとえばベンゼン、エーテル、ク
ロロホルム、アセトン、メタノールなどに難溶〜不溶で
、赤外(IR)吸収スペクトル分析でアミド、カルボン
酸(ばあいによってはカルボン酸エステル)および長鎖
アルキル基の特徴的な吸収が観察される。耐熱性がよい
ように選ばれた両性ポリアミドは熱分析の結果にも特徴
があり、約200℃で重量の急激な減少がはじまり、約
400℃で完結する。重量の減少が完結したのちは、I
R吸収スペクトル分析でのアミド、カルボン酸(ばあい
によってはカルボン酸エステル)および長鎖アルキル基
の吸収が消失し、イミド環の吸収があられれる。The above examples are just a few examples. Also, R'R4R5R6
Numerous examples are also given for , but when it is described as a repeating unit, for example, the formula: % Formula %
- dissolved in an organic polar solvent such as dimethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, hexamethylphosphoramide, etc., dissolved in a mixed solvent such as the above organic polar solvent and a normal organic solvent such as chloroform, Slightly soluble to insoluble in common organic solvents, such as benzene, ether, chloroform, acetone, methanol, etc., and infrared (IR) absorption spectroscopy reveals amide, carboxylic acid (carboxylic ester in some cases) and long-chain alkyl groups. A characteristic absorption of is observed. The amphoteric polyamide selected for its good heat resistance has characteristics in the results of thermal analysis, and its weight begins to rapidly decrease at about 200°C and ends at about 400°C. After the weight reduction is completed, I
In R absorption spectrum analysis, the absorptions of amide, carboxylic acid (carboxylic ester in some cases) and long-chain alkyl groups disappear, and the absorption of imide rings disappears.
前記説明においては、本発明の両性ポリアミドの繰返し
単位はR2を一部置換した以外すべて一般式(1)で表
わされる繰返し単位であるばあいについて説明したが、
繰返し単位のうちの30%以下の範囲であれば、一般式
(5):(式中、R1
R2は前記と同じ、Rは炭素数
1〜11の1価の脂肪族、環状脂肪族、芳香族(これら
が相互に組合わさっていてもよい)の基、これらの基が
ハロゲン原子、ニトロ基、アミノ括、ンアノ基、メトキ
シ基、アセトキシ基などで置換された基または水素原子
であり、4個のRは同じでもよく異なっていてもよい)
で表イ)される繰返しil1位が含まれていてもよい。In the above explanation, the case where the repeating units of the amphoteric polyamide of the present invention are all repeating units represented by general formula (1) except for partial substitution of R2 was explained,
If it is in the range of 30% or less of the repeating units, general formula (5): (these groups may be combined with each other), a group in which these groups are substituted with a halogen atom, a nitro group, an amino group, an ano group, a methoxy group, an acetoxy group, or a hydrogen atom; The R's may be the same or different)
It may also include the repeated il1 position expressed as a).
つぎに本発明の両性ポリアミドを用いたLII膜につい
て説明する。Next, the LII film using the amphoteric polyamide of the present invention will be explained.
本発明の両性ポリアミドを用いたLB膜の製法としては
、該両性ポリアミドを水面」−に展開し、一定の表面圧
で圧縮して単分子膜を形成し、その膜を基板1.1にう
つしとる方法である垂直浸漬法のほか、水平付層法、回
転円筒法などの方法(新実験化学講座 第18巻 界面
とコロイド、498〜508頁)などがあげられ、通常
行なわれているL D 7Jであればとくに限定される
ことなく使用しうる。The method for manufacturing the LB film using the amphoteric polyamide of the present invention is to spread the amphoteric polyamide on the water surface, compress it with a constant surface pressure to form a monomolecular film, and transfer the film onto the substrate 1.1. In addition to the vertical immersion method, there are other methods such as the horizontal layering method and the rotating cylinder method (New Experimental Chemistry Course, Volume 18, Interfaces and Colloids, pp. 498-508). 7J can be used without particular limitation.
一般にLB膜を形成させる物質を水面上に展開する際に
、水には解けないで気相中に蒸発してしまうベンゼン、
クロロホルムなどの溶媒が使用されるが、本発明の両性
ポリアミドのばあいには、溶解度をあげるために有機極
性溶媒を併用するのが望ましい。このような有機極性溶
媒としては、たとえばN、N−ジメチルホルムアミド、
N、N−ジメチルアセトアミド、N、N−ジエチルホル
ムアミド、N、N−ジエチルアセトアミド、N、N−ジ
メチルメトキシアセトアミド、ジメチルスルホキシド、
N−メチル−2−ピロリドン、ピリジン、ジメチルスル
ホン、ヘキサメチルホスホルアミド、テトラメチレンス
ルホン、ジメチルテトラメチレンスルホンなどがあげら
れる。Generally, when a substance that forms an LB film is spread on the water surface, benzene is not dissolved in water and evaporates into the gas phase.
A solvent such as chloroform is used, but in the case of the amphoteric polyamide of the present invention, it is desirable to use an organic polar solvent in combination to increase solubility. Examples of such organic polar solvents include N,N-dimethylformamide,
N,N-dimethylacetamide, N,N-diethylformamide, N,N-diethylacetamide, N,N-dimethylmethoxyacetamide, dimethylsulfoxide,
Examples include N-methyl-2-pyrrolidone, pyridine, dimethylsulfone, hexamethylphosphoramide, tetramethylene sulfone, and dimethyltetramethylene sulfone.
ベンゼン、クロロホルムなどとを桟橋性溶剤とを併用す
るばあいには、水面」二へ展開するとベンゼン、クロロ
ホルムなどは気相中に蒸発し、有機極性溶媒は大量の水
に溶解すると考えられる。When benzene, chloroform, etc. are used in combination with a jetting solvent, it is thought that when they are developed to the water surface, the benzene, chloroform, etc. will evaporate into the gas phase, and the organic polar solvent will dissolve in a large amount of water.
本発明の両性ポリアミドを水面上に展開する際に使用す
る溶液の濃度にはとくに限定はないが、通常2〜5X1
0−3M程度が用いられる。There is no particular limitation on the concentration of the solution used when spreading the amphoteric polyamide of the present invention on the water surface, but it is usually 2 to 5×1
About 0-3M is used.
本発明の両性ポリアミドを用いたLB膜を形成する基板
にはとくに限定はなく、形成されたLB膜の用途に応じ
て選択すればよい。The substrate on which the LB film using the amphoteric polyamide of the present invention is formed is not particularly limited, and may be selected depending on the intended use of the formed LB film.
前記のごとき基板の具体例としては、ガラス、アルミナ
、石英などのような無機の基板のほか金属製やプラスチ
ック製の基板、さらには511G a A S % Z
n Sのような■族、m−v族、■−■族などの゛ト
導体、PbT103、BaTl03、LINbO,、L
iTaO3のような強誘電体製の基板や磁性体基板を工
どかあげられる。これらの基板は通常行なわれるようt
よ表面処理を施して用いてもよいことはもちろんのこと
である。Specific examples of the above-mentioned substrates include inorganic substrates such as glass, alumina, and quartz, as well as metal and plastic substrates, and even 511G a A S % Z.
Conductors such as ■ group such as n S, m-v group, ■-■ group, PbT103, BaTl03, LINbO,, L
Ferroelectric substrates such as iTaO3 and magnetic substrates can be manufactured. These substrates are t
Of course, it may be used after surface treatment.
fiお、えられた1、13膜を加熱してポリイミドにし
て用いるばあいには耐熱性の良好な基板をえらぶことか
必要である。If the obtained films 1 and 13 are to be heated and used as polyimide, it is necessary to select a substrate with good heat resistance.
本発明の両性ポリアミドを用いるとLB法で基板−にに
欠陥の少ない、耐熱性の良好な薄膜を形成することがで
きる。When the amphoteric polyamide of the present invention is used, a thin film with few defects and good heat resistance can be formed on a substrate by the LB method.
なお、さらにこの薄膜を部分的にあるいは完全にイミド
化させることによって、さらに耐熱性の優れた薄膜をう
ろことができる。Furthermore, by partially or completely imidizing this thin film, a thin film with even better heat resistance can be obtained.
本発明の両性ポリアミドは通常の1.B膜に用いる化合
物より耐熱性、耐薬品性が改溌されているので、本発明
の両性ポリアミドのLD膜も耐熱性、耐薬品性に優れ、
機械的特性も良好で、そのままデバイスなどの用途に使
用することができる。また該1.8膜は 10000Å
以下という非常に薄い膜であり、望むなら5〜100O
Aにもしつる。The amphoteric polyamide of the present invention is a conventional 1. Since the heat resistance and chemical resistance of the compound used in the B film have been improved, the amphoteric polyamide LD film of the present invention also has excellent heat resistance and chemical resistance.
It also has good mechanical properties and can be used as is for devices and other applications. Also, the 1.8 film is 10000Å
It is a very thin film of less than 5 to 100 O if desired.
It also applies to A.
さらに、本発明の両性ポリアミドを構成する繰返し11
1位には、多数のπ電子をもっているアントラキノン基
を含有しているので、半導性、光電導性など興味ある諸
物性が期待され、これらを利用した電子デバイスを作製
することができる。また、剛直な構造が導入されている
ため、高度に配向した両性ポリアミド薄膜をうろことも
でき、液晶配向膜や偏光膜としても使用しうる。Furthermore, repeating 11 constituting the amphoteric polyamide of the present invention
Since it contains an anthraquinone group having a large number of π electrons at the 1st position, it is expected to have various interesting physical properties such as semiconductivity and photoconductivity, and electronic devices using these properties can be fabricated. In addition, since a rigid structure has been introduced, it can be used as a highly oriented amphoteric polyamide thin film, and can be used as a liquid crystal alignment film or a polarizing film.
えられた本発明の両性ポリアミド薄膜などをさらにイミ
ド化させて使用する際′のイミド化法についてはとくに
限定はないが、200〜400℃近辺の温度で加熱する
のが一般的であり、レーザー光などを用いて行なっても
よい。もちろんポリアミック酸のイミド化の際に使用さ
れる無水酢酸やピリジンを使ってもよいし、またそれら
と熱反応とを併用してもよい。たとえば一般式(3)で
表わされる繰返し単位のばあいには、繰返し単位のばあ
いには、
なる反応がおこり、また一般式(4)で表わされるなる
反応がおこってポリイミド化物となる。もちろん一般式
(5)で表わされるポリアミック酸単位のばあいにもH
2Oが生成してポリイミド化物となるか、このばあいに
はLB膜用の材料とはなりえない。When the obtained amphoteric polyamide thin film of the present invention is further imidized and used, there are no particular limitations on the imidization method, but it is common to heat it at a temperature around 200 to 400°C, and to use a laser. This may be done using light or the like. Of course, acetic anhydride and pyridine used in the imidization of polyamic acid may be used, or they may be used in combination with a thermal reaction. For example, in the case of the repeating unit represented by general formula (3), the following reaction occurs, and the following reaction occurs as shown in general formula (4), resulting in a polyimide compound. Of course, in the case of the polyamic acid unit represented by general formula (5), H
Either 2O is generated and becomes a polyimide, or in this case, it cannot be used as a material for the LB film.
本発明の両性ポリアミド薄膜をさらにイミド化させた薄
膜は、さらに耐熱性、耐薬品性に優れ、機械的特性にも
優れ、そのうえ10000人以ドという非常に薄い膜で
あり、望むなら5〜1000人にもすることができ、デ
バイスなどの用途に使用することができる。The thin film obtained by further imidizing the amphoteric polyamide thin film of the present invention has further excellent heat resistance, chemical resistance, and mechanical properties, and is a very thin film with a thickness of 10,000 or less, and if desired, a thickness of 5 to 1,000. It can be used for people, devices, etc.
つぎに本発明の両性ポリアミドおよびそれからなる薄膜
を実施例にもとづき説明する。Next, the amphoteric polyamide of the present invention and a thin film made of it will be explained based on Examples.
実施例1
ピロメリット酸二無水物2.18g (10ミリモル)
とステアリルアルコール5.40g (20ミリモル)
とをフラスコ中、乾燥窒素流通下、約100℃で311
、ν間反応させ、エタノールで再結精製した。Example 1 Pyromellitic dianhydride 2.18 g (10 mmol)
and stearyl alcohol 5.40 g (20 mmol)
and 311 in a flask at about 100°C under dry nitrogen flow.
, ν, and re-purified with ethanol.
えられたハーフエステル2.28g (3ミリモル)に
チオニルクロライド6ccを加え、約70℃で1時間ア
シル化した。そののち、過剰のチオニルクロライドを留
去させた。生成した酸クロライドをヘキサメチルホスホ
ルアミド40ccに溶解させ、これに、ジメチルアセト
アミド20ccにとかした2、6−ジアミツアントラキ
ノン0.71g (3ミリモル)を0〜5℃で滴下し、
滴下後約1時間文応させたのち、さらに室温および40
℃で1時間ずつ反応を継続させた。反応液を蒸留水25
0ec中に注いで反応生成物を析出させたのち濾過し、
約40℃で減圧乾燥させて約2.0gの淡黄色粉末をえ
た。6 cc of thionyl chloride was added to 2.28 g (3 mmol) of the obtained half ester and acylated at about 70° C. for 1 hour. Thereafter, excess thionyl chloride was distilled off. The produced acid chloride was dissolved in 40 cc of hexamethylphosphoramide, and 0.71 g (3 mmol) of 2,6-diamithanthraquinone dissolved in 20 cc of dimethylacetamide was added dropwise at 0 to 5°C.
After being allowed to react for about 1 hour after dropping, it was further heated to room temperature and 40℃.
The reaction was continued for 1 hour at ℃. Pour the reaction solution into distilled water for 25 minutes.
Pour into 0ec to precipitate the reaction product, then filter it.
It was dried under reduced pressure at about 40°C to obtain about 2.0 g of pale yellow powder.
えられた粉末についてIRスペクトル分析およびNMR
分析を行ない、目的の両性ポリアミドであることを確認
した。また、GPCによる分子量4p1定の結果、分子
量は約30000であった。IR spectrum analysis and NMR of the obtained powder
Analysis was conducted and it was confirmed that it was the desired amphoteric polyamide. Further, as a result of molecular weight 4p1 determination by GPC, the molecular weight was approximately 30,000.
(IRスペクトル分析) KBrディスク法で測定した結果を第1図に示す。(IR spectrum analysis) Figure 1 shows the results measured by the KBr disk method.
チャートにはエステル、アミドI吸収帯、■吸収帯、■
吸収帯、アルキル鎖の特徴的な吸収がある。The chart shows ester, amide I absorption band, ■ absorption band, ■
There is an absorption band, a characteristic absorption of alkyl chains.
実施例2
実施例1の生成物55.1mgを蒸留したクロロホルム
/ジメチルアセトアミド−8/2(容量比)の混合液に
溶解させて25m1の溶液にしたLB膜用展開液を調製
した。Example 2 A developing solution for LB membrane was prepared by dissolving 55.1 mg of the product of Example 1 in a mixed solution of distilled chloroform/dimethylacetamide-8/2 (volume ratio) to make a 25 ml solution.
えられた展開液を用いてFIT蒸留水上、20°Cで表
面圧πと繰返し単位(unit)当りの面積との関係を
測定したところ、第2図に示す結果かえられた。約10
0人2/unilから表面圧はたちあがり、良好な凝縮
膜を形成した。極限面積は80人2/unitであり、
崩壊圧力も40dyne/ cmと高分子膜としては非
常に1ωい値を示した。また表面圧を25dync/c
a+に保って膜を水面上に保持しても、2時間にわたっ
て面積の減少がみとめられない安定な膜であった。Using the obtained developing solution, the relationship between the surface pressure π and the area per repeating unit (unit) was measured on FIT distilled water at 20°C, and the results shown in FIG. 2 were obtained. about 10
The surface pressure rose from 0 person 2/unil, and a good condensation film was formed. The limit area is 80 people/unit,
The collapse pressure was also 40 dyne/cm, which is a very low 1ω value for a polymer membrane. Also, the surface pressure is 25 dync/c
Even when the membrane was kept at a+ on the water surface, it was a stable membrane with no decrease in area observed over 2 hours.
つぎに水面−1−の膜の表面圧を20℃で25dyne
/cInに保って累積速度1oads/winでI、B
法でITO付きガラス基板上に31層累積させた。Next, the surface pressure of the membrane at the water surface -1- was set to 25 dyne at 20°C.
/cIn and cumulative speed 1oads/win I, B
31 layers were deposited on a glass substrate with ITO using the method.
ITO付きガラス基板、Eに形成された膜をFT−11
?分析法により分析すると、第1図と同じ吸収ピークを
もつスペクトルかえられ、実施例1でえられた化合物の
累積膜であり、面積−時間曲線からY型膜であることが
確認された。FT-11 film formed on glass substrate with ITO, E
? When analyzed by an analytical method, the spectrum was changed to have the same absorption peak as in FIG. 1, and it was confirmed that it was a cumulative film of the compound obtained in Example 1, and that it was a Y-type film from the area-time curve.
[発明の効果]
本発明の両性ポリアミドを用いるとLB法により厚さ
10000Å以下、要すれば5〜1000人の薄膜を形
成することができ、えられたLB膜は良好な耐熱性およ
び興味ある電気特性を示し、耐薬品性、機械的特性のよ
い両性ポリアミド薄膜かえられる。この薄膜は、このま
までも使用しうるが、加熱によりさらに耐熱性などの良
好な薄膜に変換しうる。[Effect of the invention] When the amphoteric polyamide of the invention is used, the thickness can be reduced by the LB method.
Thin films of less than 10,000 Å and 5 to 1,000 Å can be formed, and the resulting LB films exhibit good heat resistance and interesting electrical properties, and are suitable for replacing amphoteric polyamide thin films with good chemical resistance and mechanical properties. It will be done. This thin film can be used as is, but it can be converted into a thin film with better heat resistance by heating.
第1図は、実施例1で製造された両性ポリアミドの11
?スペクトル分析結果を示すチャート、第2図は、実施
例1で製造された両性ポリアミドを用いて調製したLB
膜膜層展開液再蒸留水上に展開し、20℃で表面圧πと
繰返し単位当りの面積との関係を測定した結果を示すグ
ラフである。Figure 1 shows 11 of the amphoteric polyamide produced in Example 1.
? A chart showing the spectrum analysis results, FIG. 2 shows the LB prepared using the amphoteric polyamide produced in Example 1.
It is a graph showing the results of measuring the relationship between the surface pressure π and the area per repeating unit at 20° C. by developing a membrane layer developing solution on double distilled water.
Claims (1)
4価の基、R^2は ▲数式、化学式、表等があります▼または▲数式、化学
式、表等があります▼ R^3、R^4、R^5およびR^6は脂肪族、環状脂
肪族もしくは芳香族(これらが相互に組合わさっていて
もよい)の炭素数1〜30の1価の基(これらの基がハ
ロゲン原子、ニトロ基、アミノ基、シアノ基、メトキシ
基、アセトキシ基で置換されていてもよい)または水素
原子であり、R^3、R^4、R^5およびR^6の少
なくとも1個は炭素数12〜30の基である)で表わさ
れる繰返し単位を主体とする両性ポリアミド。 2 一般式(1)で表わされる繰返し単位を主体とする
両性ポリアミドをラングミュア・ブロジェット法により
基板上に成膜した薄膜。 3 前記薄膜が単分子膜である請求項2記載の薄膜。 4 前記薄膜が累積膜である請求項2記載の薄膜。[Claims] 1 General formula (1): ▲ Numerical formulas, chemical formulas, tables, etc. ▼ (1) (In the formula, R^1 is a tetravalent group containing at least 2 carbon atoms, R^ 2 is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ R^3, R^4, R^5 and R^6 are aliphatic, cycloaliphatic or aromatic (these monovalent groups having 1 to 30 carbon atoms (which may be substituted with a halogen atom, a nitro group, an amino group, a cyano group, a methoxy group, or an acetoxy group) ) or a hydrogen atom, and at least one of R^3, R^4, R^5 and R^6 is a group having 12 to 30 carbon atoms). 2 A thin film made of amphoteric polyamide mainly composed of repeating units represented by the general formula (1) on a substrate by the Langmuir-Blodgett method. 3. The thin film according to claim 2, wherein the thin film is a monomolecular film. 4. The thin film according to claim 2, wherein the thin film is a cumulative film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27770089A JPH03139523A (en) | 1989-10-25 | 1989-10-25 | Amphoteric polyamide and thin film comprising the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27770089A JPH03139523A (en) | 1989-10-25 | 1989-10-25 | Amphoteric polyamide and thin film comprising the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03139523A true JPH03139523A (en) | 1991-06-13 |
Family
ID=17587093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27770089A Pending JPH03139523A (en) | 1989-10-25 | 1989-10-25 | Amphoteric polyamide and thin film comprising the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03139523A (en) |
-
1989
- 1989-10-25 JP JP27770089A patent/JPH03139523A/en active Pending
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