JPH01242630A - Monomolecular film or monomolecular built-up film having porphyrin structure - Google Patents
Monomolecular film or monomolecular built-up film having porphyrin structureInfo
- Publication number
- JPH01242630A JPH01242630A JP63070721A JP7072188A JPH01242630A JP H01242630 A JPH01242630 A JP H01242630A JP 63070721 A JP63070721 A JP 63070721A JP 7072188 A JP7072188 A JP 7072188A JP H01242630 A JPH01242630 A JP H01242630A
- Authority
- JP
- Japan
- Prior art keywords
- film
- monomolecular
- polyamic acid
- polyimide
- cumulative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000004032 porphyrins Chemical group 0.000 title claims abstract description 12
- 229920001721 polyimide Polymers 0.000 claims abstract description 34
- 239000004642 Polyimide Substances 0.000 claims abstract description 33
- 125000000962 organic group Chemical group 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 9
- 230000001186 cumulative effect Effects 0.000 claims description 61
- 239000000470 constituent Substances 0.000 claims description 5
- 230000006870 function Effects 0.000 abstract description 7
- 125000003118 aryl group Chemical group 0.000 abstract description 5
- 230000005389 magnetism Effects 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052745 lead Inorganic materials 0.000 abstract description 2
- 230000026683 transduction Effects 0.000 abstract 2
- 238000010361 transduction Methods 0.000 abstract 2
- 230000002463 transducing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 98
- 229920005575 poly(amic acid) Polymers 0.000 description 58
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 48
- 239000000243 solution Substances 0.000 description 37
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 27
- 238000000034 method Methods 0.000 description 26
- 238000000862 absorption spectrum Methods 0.000 description 20
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 18
- 239000003960 organic solvent Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 16
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 239000010409 thin film Substances 0.000 description 12
- 125000000217 alkyl group Chemical group 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 150000001412 amines Chemical class 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000807 solvent casting Methods 0.000 description 8
- 238000007654 immersion Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000008033 biological extinction Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- -1 ophtacosyl Chemical group 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 230000035508 accumulation Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 4
- 229910001634 calcium fluoride Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000004985 diamines Chemical class 0.000 description 3
- NAPSCFZYZVSQHF-UHFFFAOYSA-N dimantine Chemical compound CCCCCCCCCCCCCCCCCCN(C)C NAPSCFZYZVSQHF-UHFFFAOYSA-N 0.000 description 3
- 229950010007 dimantine Drugs 0.000 description 3
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003849 aromatic solvent Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000011511 Diospyros Nutrition 0.000 description 1
- 244000055850 Diospyros virginiana Species 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- BTYUGHWCEFRRRF-UHFFFAOYSA-N [As].[K] Chemical compound [As].[K] BTYUGHWCEFRRRF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- YHASWHZGWUONAO-UHFFFAOYSA-N butanoyl butanoate Chemical compound CCCC(=O)OC(=O)CCC YHASWHZGWUONAO-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940008406 diethyl sulfate Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 125000002463 lignoceryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 125000001802 myricyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000005064 octadecenyl group Chemical group C(=CCCCCCCCCCCCCCCCC)* 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/361—Organic materials
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ポルフィリン構造を有するポリイミドを構成
成分とする単分子膜もしくは単分子累積膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a monomolecular film or a monomolecular cumulative film comprising a polyimide having a porphyrin structure as a constituent component.
近年、有機超薄膜に対する関心が高まっている。有機材
料の持つ多様性を生かし、有機分子を配向性良く超薄膜
化することによる、高性能、高集積、高効率の素子開発
が試みられている。In recent years, interest in organic ultra-thin films has increased. Attempts are being made to develop high-performance, highly integrated, and highly efficient devices by taking advantage of the diversity of organic materials and forming ultra-thin films with well-oriented organic molecules.
有機超薄膜の形成方法にはLB(ラングミュアブロジェ
ット)法、蒸着法、キャスト法等があるが、中でもLB
法は、
/)Aオーダーで膜厚の制御された均一な単分子膜およ
び単分子累積膜が形成できる。Methods for forming ultra-thin organic films include the LB (Langmuir-Blodgett) method, vapor deposition method, and casting method.
The method is as follows: /) A uniform monomolecular film and monomolecular cumulative film with controlled film thickness can be formed on the A order.
2) 有機分子の配向を制御して並べられる。2) The orientation of organic molecules can be controlled and arranged.
3)常温、常圧下で成膜できるだめ種々の有機分子に適
用でき、容易にしかも安価で成膜できるO
等の利点を有し、最も期待されている手段である。この
方法を用いれば、単なる絶縁性の超薄膜のみならず、様
々な機能を有する超薄膜を作製することかできる。例え
ば、光電変換素子、メモリー材料、導電性材料、表示素
子、非線形光学素子、レジスト材料、ガスセンサー等へ
の応用が盛んに試みられている。3) Since it can be formed into a film at room temperature and under normal pressure, it can be applied to various organic molecules, and it has advantages such as O 2 which can be easily and inexpensively formed into a film, and is the most promising method. Using this method, it is possible to fabricate not only ultra-thin insulating films but also ultra-thin films with various functions. For example, applications to photoelectric conversion elements, memory materials, conductive materials, display elements, nonlinear optical elements, resist materials, gas sensors, etc. are being actively attempted.
しかし、これまでに製造された多くの単分子累積膜は、
力学的、熱的、化学的安定性に欠け、機能性超薄膜とし
て商業的に利用しようとする際忙大きな問題点となって
いた。However, many monomolecular cumulative films produced to date are
It lacks mechanical, thermal, and chemical stability, which has been a major problem when trying to commercially use it as a functional ultra-thin film.
この点を解決すべく、様々な試みがなされつつある。例
えば、高分子を用いて単分子膜および単分子累積膜を作
製するのはその一例である。Various attempts are being made to solve this problem. For example, one example is the production of monomolecular films and monomolecular cumulative films using polymers.
中でも、最近、本発明者らのグループ等によって提案さ
れたポリイミド薄膜(例えば特開昭62−27313!
r号参照)は耐熱性に優れた絶縁超薄膜として、半導体
素子等の電子部品や水素ガス等の分離膜への応用が期待
されている。Among them, polyimide thin films recently proposed by the group of the present inventors (for example, Japanese Patent Application Laid-Open No. 62-27313!
As an insulating ultra-thin film with excellent heat resistance, it is expected to be applied to electronic components such as semiconductor devices and separation membranes for hydrogen gas, etc.
本発明者らはかかるポリイミド薄膜に光電変換、磁性、
・・ガスセンシング等の機能を有するポルフィリン環を
導入することにより、前記の問題点が解消された新規な
単分子膜および単分子累積膜が得られることを見いだし
、本発明を完成するに至った。The present inventors have developed such polyimide thin films for photoelectric conversion, magnetic properties,
...We have discovered that by introducing a porphyrin ring that has functions such as gas sensing, new monomolecular films and monomolecular cumulative films that solve the above problems can be obtained, and we have completed the present invention. .
本発明の目的は光電変換、磁性、ガスセンシング等の機
能を有するポルフィリン構造を含むポリイミド、を構成
単位とする単分子膜もしくは単分子累積膜を提供するこ
とである。An object of the present invention is to provide a monomolecular film or a monomolecular cumulative film whose constituent unit is polyimide containing a porphyrin structure having functions such as photoelectric conversion, magnetism, and gas sensing.
即ち、本発明の要旨は、一般式(I)
(式中、R1はり価の有機基、R2はポルフィリン環を
含むコ価の有機基を示す)
で表される反復単位を有するポリイミドを構成成分とす
る単分子膜もしくは単分子累積膜に存する。That is, the gist of the present invention is to use a polyimide having a repeating unit represented by the general formula (I) (wherein R1 is an organic group with a valence value and R2 is an organic group with a covalent value containing a porphyrin ring) as a constituent component. It exists in a monomolecular film or a monomolecular cumulative film.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明の一般式(I)にかかるR1としては、q
価の芳香族有機基が挙げられる。具体的には、
等のり価の芳香族有機基又はその置換した誘導体が挙げ
られる。First, as R1 according to the general formula (I) of the present invention, q
aromatic organic groups. Specifically, aromatic organic groups having adhesive values such as these or substituted derivatives thereof may be mentioned.
一方、R2としては、ポルフィリン環を含有するコ価の
有機基、好ましくはフェニル基をコ個以上有するポルフ
ィリン環を含有する2価の有機基が挙げられる。このよ
うなR2の具体例としては、
(式中、MはFe、 Co、 Ni、Mn 、 Cr
% Mg *Cu、Pb等の金属を示す。)
等の芳香族有機基又はその置換した誘導体を挙げること
ができる。On the other hand, examples of R2 include a covalent organic group containing a porphyrin ring, preferably a divalent organic group containing a porphyrin ring having co or more phenyl groups. Specific examples of such R2 include (wherein M is Fe, Co, Ni, Mn, Cr
% Mg *Indicates metals such as Cu and Pb. ) or substituted derivatives thereof.
本発明に係る単分子膜もしくは単分子累積膜は、たとえ
ば次のような方法によって得られる。The monomolecular film or monomolecular cumulative film according to the present invention can be obtained, for example, by the following method.
すなわち、ボリア°ミド酸と長鎖アルキル基を有するア
ミン類との有機溶媒溶液を水面上に展開し、基板上にポ
リアミド酸誘導体の単分子膜もしくは単分子累積Mを形
成させ、ついでこれをイミド化処理することにょシ、ポ
リイミドを構成成分とする単分子膜もしくは単分子累積
膜を得ることができる。That is, an organic solvent solution of boriamic acid and an amine having a long-chain alkyl group is spread on a water surface to form a monomolecular film or monomolecular accumulation M of the polyamic acid derivative on the substrate, and then this is coated with imide By carrying out the chemical treatment, a monomolecular film or a monomolecular cumulative film containing polyimide as a constituent component can be obtained.
上記ポリアミド酸は、一般式(II)で表わされる。The above polyamic acid is represented by general formula (II).
(式中、R’ % R2は一般式(I、lにおけると同
義、nは70以上の整数を示す。〕
上記一般式(n)で表わされるポリアミド酸は、下記一
般式C,U1)
(式中、R1は一般式(I)におけると同義って表わさ
れるテトラカルボン酸二無水物と、下記一般式(■)
H2N −R2−NH2・ ・ ・ ・ ・ ・ ・
・ ・ ・ ・ ・ ・ (IV、)(式中、R2は
一般式(I)におけると同義って表わされるジアミンか
ら、従来公知のポリアミド酸の製造方法によって製造さ
れる。(In the formula, R' % R2 has the same meaning as in the general formula (I, 1), n represents an integer of 70 or more.] The polyamic acid represented by the above general formula (n) can be expressed by the following general formula C, U1) ( In the formula, R1 is a tetracarboxylic dianhydride represented as in the general formula (I), and the following general formula (■) H2N -R2-NH2.
・ ・ ・ ・ ・ ・ (IV,) (wherein, R2 is produced from a diamine represented with the same meaning as in general formula (I) by a conventionally known method for producing polyamic acid.
また、上記の長鎖アルキル基を有するアミン類は、一般
式(V)
R3−N −R4
1・・・・・・・・・・・・・(V)
で表わされる。Moreover, the above-mentioned amines having a long-chain alkyl group are represented by the general formula (V) R3-N-R4 1 (V).
式中、 R3、r 、 R’は、水素原子又は有機基を
示しくただし、その二つがアルキレン基により、環を形
成してもよい)、そのうちの少なくとも一つけ長鎖アル
キル基を示す。In the formula, R3, r, and R' represent a hydrogen atom or an organic group (two of which may form a ring with an alkylene group), and at least one of them represents a long-chain alkyl group.
有機基としては、芳香族もしくは脂環式炭化水素基等で
置換されていてもよいアルキル基のほか、アルケニル、
アルキニル基等の不飽和基が挙げられる。また、これら
は、アルキル基等の炭素の一部が他の結合基、たとえば
05C○、エステル基等で置換されていてもよい。Examples of organic groups include alkyl groups that may be substituted with aromatic or alicyclic hydrocarbon groups, alkenyl,
Examples include unsaturated groups such as alkynyl groups. In addition, some of the carbon atoms such as alkyl groups may be substituted with other bonding groups, such as 05C◯ and ester groups.
また、R3,R1’、R5の二つが環を形成する場合と
しては、たとえば3〜7員環が挙げられる。Furthermore, examples of the case where R3, R1', and R5 form a ring include a 3- to 7-membered ring.
長鎖アルキル基としては、たとえばオクチル基、デシル
基、ドデシル基、ヘキサデシル基、エイコシル基、トコ
シル基、テトラコシル基、オフタコシル基、トリアコン
チル基、ペンタトリアコンチル基等の炭素数gからグθ
までのアルキル基が好適である。ただし、このアルキル
基の炭素はその一部が他の結合基、たとえばOlS、C
O,エステル基等で置換されていてもよく、この場合に
は炭素とこの結合基の総数がg〜4tOから選ぶのが好
適である。これらの長鎖アルキル基は分岐していてもよ
く、さらには、二重結合もしくは三重結合を有していて
もよい。Examples of long-chain alkyl groups include octyl, decyl, dodecyl, hexadecyl, eicosyl, tocosyl, tetracosyl, ophtacosyl, triacontyl, and pentatriacontyl groups, with carbon numbers ranging from g to θ.
Alkyl groups up to are preferred. However, some of the carbon atoms in this alkyl group are attached to other bonding groups, such as OlS, C
It may be substituted with O, ester group, etc., and in this case, it is preferable that the total number of carbons and this bonding group is selected from g to 4tO. These long-chain alkyl groups may be branched and may further have double or triple bonds.
このような置換アルキル基としては、たとえばオクタデ
シル基に対応して、オキサオクタデシル基、チアオクタ
デシル基、オクタデセニル基、オクタデシニル基等が挙
げられる・
上記の長鎖アルキル基は、 R3、R’ 、 R’の少
なくとも一つである必要があるが、通常−つで十分であ
る。また、前記環を形成する場合には、環にこの長鎖ア
ルキル基を有するものであってもよい。Such substituted alkyl groups include, for example, oxaoctadecyl group, thiaoctadecyl group, octadecenyl group, octadecynyl group, etc., corresponding to octadecyl group. The above long-chain alkyl groups are R3, R', R' It is necessary to have at least one of the following, but - is usually sufficient. Further, when forming the ring, the ring may have this long-chain alkyl group.
本発明にかかる単分子膜もしくは単分子累積膜の製造法
は、例えば、まず上記ポリアミド酸とアミン類との有機
溶媒溶液を水面上に展開し、それを基板上に累積してポ
リアミド酸誘導体の単分子膜もしくは単分子累積膜を形
成させる。The method for producing a monomolecular film or a monomolecular cumulative film according to the present invention includes, for example, first spreading an organic solvent solution of the above-mentioned polyamic acid and amines on a water surface, and accumulating it on a substrate to form a polyamic acid derivative. A monomolecular film or a monomolecular cumulative film is formed.
たとえば、上記一般式(If)で表わされるポリアミド
酸の有機溶媒溶液と、上記一般式(V)で表わされるア
ミン類を混合した後、この溶液を水面上に展開し、さら
に基板上に単分子膜を形成させることによシ行なわれる
。ここで使用されるポリアミド酸は、7度単離したもの
を適当な有機溶媒に再溶解させて使用してもよいが、上
期一般式(III)で表わされるテトラカルボン酸二無
水物と、上記一般式(IV)で表わされるジアミンとを
有機溶媒中で反応させて得られる重合反応溶液をそのマ
マ便用し、以後の展開に好適なよう建適当な有機溶媒で
希釈してもよい。上記一般式(m)で表わされるテトラ
カルボン酸二無水物と、上記一般式(IV)で表わされ
るジアミンとの重合反応に使用される有機溶媒としては
、たとえば、N、N−ジメチルホルムアミド、 N、N
−ジメチルアセトアミド、N−メチルーコーピロリドン
、−、コ′−ジメトキシエチルエーテル等を例示するこ
とができる。いずれの場合においても、ポリアミド酸の
重合度を表わすnは70以上であることが好適であシ、
これよシ小さいと膜として機能しなくなる可能性がある
。ポリアミド酸誘導体の有機溶媒溶液の展開に使用され
る有機溶媒は、たとえば、ヘキサン、オクタン等の炭化
水素系溶媒、ベンゼン、トルエン、キシレン等の芳香族
系溶媒、ジクロロメタン、クロロホルム、四塩化炭素等
の塩素系溶媒、およびジエチルエーテル、ジプチルエー
テル等のエーテル系溶媒を例示することができるが、水
と実質的に混合しないことが必要である。またこれらの
有機溶媒と、ジメチルホルムアミド、N、N−ジメチル
アセトアミド、N−メチル−一−ピロリドン、ジメチル
スルホキシド等の極性溶媒とを混合して使用することも
できる。この場合水と実質的に混合しない有機溶媒が、
全溶媒の体積中70%以下になると水面上への展開が困
難忙なるので好ましくない。For example, after mixing an organic solvent solution of a polyamic acid represented by the above general formula (If) and an amine represented by the above general formula (V), this solution is spread on a water surface, and then a single molecule is placed on a substrate. This is done by forming a film. The polyamic acid used here may be isolated seven times and then redissolved in an appropriate organic solvent before use, but the polyamic acid used here may be used by redissolving it in an appropriate organic solvent. The polymerization reaction solution obtained by reacting the diamine represented by the general formula (IV) in an organic solvent may be used directly and diluted with an appropriate organic solvent so as to be suitable for subsequent development. Examples of the organic solvent used in the polymerization reaction between the tetracarboxylic dianhydride represented by the above general formula (m) and the diamine represented by the above general formula (IV) include N,N-dimethylformamide, N , N
Examples include -dimethylacetamide, N-methyl-copyrrolidone, -,co'-dimethoxyethyl ether, and the like. In any case, it is preferable that n, which represents the degree of polymerization of the polyamic acid, is 70 or more.
If it is smaller than this, it may not function as a membrane. Examples of organic solvents used for developing organic solvent solutions of polyamic acid derivatives include hydrocarbon solvents such as hexane and octane, aromatic solvents such as benzene, toluene, and xylene, dichloromethane, chloroform, and carbon tetrachloride. Examples include chlorine-based solvents and ether-based solvents such as diethyl ether and diptyl ether, but they must be substantially immiscible with water. It is also possible to use a mixture of these organic solvents and a polar solvent such as dimethylformamide, N,N-dimethylacetamide, N-methyl-1-pyrrolidone, or dimethylsulfoxide. In this case, the organic solvent that is substantially immiscible with water is
If it is less than 70% by volume of the total solvent, it will be difficult and difficult to spread on the water surface, which is not preferable.
ポリアミド酸とアミン類との使用割合は、自己支持性、
すなわち基板への単分子膜の形成に適した表面圧(約/
OmN/m以上、通常lSmN/m以上)を得るため
に、通常アミン類をポリアミド酸に対し772モル以上
、好ましくは等モル程度使用する。また、ポリアミド酸
とアミン類の有機溶媒中の濃度は、ポリアミド酸、アミ
ン類、溶媒の種類等によシ、適宜選定しうるが、通常0
. / 〜/ Ommol/13程度か選ばれる。The ratio of polyamic acid and amines used is determined by self-supporting,
In other words, the surface pressure (approximately /
(0mN/m or more, usually 1SmN/m or more), the amine is usually used in an amount of 772 mol or more, preferably about the same mol, relative to the polyamic acid. In addition, the concentration of polyamic acid and amines in the organic solvent can be selected as appropriate depending on the type of polyamic acid, amines, solvent, etc., but it is usually 0.
.. / ~ / Ommol/13 or so is selected.
また、上記成分以外の単分子膜の膜材料を、実質的に本
発明の単分子膜の性質を損なわない限シ、適宜、配合す
ることもできる。In addition, film materials for the monomolecular film other than the above-mentioned components may be appropriately blended as long as they do not substantially impair the properties of the monomolecular film of the present invention.
基板は、石英、ガラス等のセラミックスやグラッシーカ
ーボン等のカーボン基板、アルミニウム、銅、鉄などの
金属、シリコン、カリウムーヒ素などの半導体、ポリイ
ミドフィルム、ポリスルホンフィルム等のプラスチック
フィルムなどを例示することができるが、これらの基板
は、水に実質的に溶解しないことが必要である。Examples of the substrate include ceramics such as quartz and glass, carbon substrates such as glassy carbon, metals such as aluminum, copper, and iron, semiconductors such as silicon and potassium-arsenic, and plastic films such as polyimide films and polysulfone films. However, it is necessary that these substrates be substantially insoluble in water.
この基板への単分子膜の形成においては、いわゆるラン
グミュア−プロジェット法による薄膜製造装置(たとえ
ば、Contemp−Phys−−2!; */θデ、
i9gダ)を使用すると便利であシ、膜の累積回数をか
えることによシ、膜の使用目的に応じ任意の膜厚を得る
ことができる。In forming a monomolecular film on this substrate, a thin film manufacturing apparatus using the so-called Langmuir-Prodgett method (for example, Contemp-Phys-2!; */θ de,
It is convenient to use the i9g da), and by changing the cumulative number of times the film is applied, it is possible to obtain any film thickness depending on the purpose of use of the film.
さらに、基板上に得られたポリアミド酸誘導体の単分子
膜もしくは単分子累積膜を、イミド化処理することによ
りポリイミドの薄膜を得る。Furthermore, the monomolecular film or monomolecular cumulative film of the polyamic acid derivative obtained on the substrate is subjected to an imidization treatment to obtain a polyimide thin film.
イミド化処理には、加熱処理と、化学的処理の二通りあ
るが、これらのいずれかを選択することもできるし、両
者の方法を併用することもできる。There are two types of imidization treatment: heat treatment and chemical treatment, and either of these methods can be selected, or both methods can be used in combination.
加熱処理においては、ポリアミド酸誘導体の単分子膜も
しくは単分子累積膜が形成された基板を、徐々VcJθ
0 ’Cまで加熱するものである。In the heat treatment, the substrate on which the monomolecular film or monomolecular cumulative film of the polyamic acid derivative has been formed is gradually heated to VcJθ
It is heated to 0'C.
この時、窒素やアルゴンなどの不活性ガス雰囲気下で行
なうことが望ましい。化学処理においては、ポリアミド
酸誘導体の単分子膜もしくは単分子累積膜が形成された
基板をカルボン酸無水物を含む有機溶媒溶液に浸漬する
ことによりイミド化されるものである。ここで使用され
る酸無水物としては、たとえば、無水酢酸、無水プロピ
オン酸、無水酪酸等を例示することができる。これらの
酸無水物と共に、ピリジンなどの塩基を使用すると効果
的である。また、この方法に使用できる有機溶媒として
は、実質的に基盤に累積しているポリアミド酸誘導体を
溶解しない有機溶媒が選択される。このような有機溶媒
として、たとえば、ヘキサン、オクタン等の炭化水素系
溶媒、ベンゼン、トルエン、キシレン等の芳香族系溶媒
、ジクロロメタン、クロロホルム、四塩化炭素等の塩素
系溶媒、およびジエチルエーテル、シフチルエーテル等
のエーテル系溶媒を例示することができる。カルボン酸
無水物の有機溶媒溶液中への浸漬は、通常io分から2
q時間が好適である。At this time, it is desirable to carry out under an inert gas atmosphere such as nitrogen or argon. In the chemical treatment, a substrate on which a monomolecular film or a monomolecular cumulative film of a polyamic acid derivative is formed is imidized by immersing it in an organic solvent solution containing a carboxylic acid anhydride. Examples of the acid anhydride used here include acetic anhydride, propionic anhydride, butyric anhydride, and the like. It is effective to use a base such as pyridine together with these acid anhydrides. Further, as the organic solvent that can be used in this method, an organic solvent that does not substantially dissolve the polyamic acid derivative accumulated on the substrate is selected. Examples of such organic solvents include hydrocarbon solvents such as hexane and octane, aromatic solvents such as benzene, toluene, and xylene, chlorine solvents such as dichloromethane, chloroform, and carbon tetrachloride, and diethyl ether and sulfate. Examples include ether solvents such as ether. Immersion of the carboxylic acid anhydride in an organic solvent solution is usually carried out from io to 2
q hours are preferred.
以下、実施例によシ本発明を更に詳細に説明するが、本
発明はその要旨を越えない限シ実施例により限定される
ものではない。Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited to the Examples unless the gist thereof is exceeded.
実施例/
ポリアミド酸溶液の曾製
0、!; ? g ? (0−タコクmmol)のtr
ans−ジアミノテトラフェニルポルフィリン(s、i
s−ビス(9−アミノフェニル) −10,−〇−ジフ
ェニルー2/H,2JH−ポルフィン)を、10m1の
N、N−ジメチルアセトアミドに溶解し、0、.202
? (0,927mmol )の無水ピロメリット酸
を加えた。この溶液f 20−23℃で10時間攪拌し
てポリアミド酸の溶液を得た。Example / Polyamic acid solution made by Zeng 0,! ;? G? (0-takoku mmol) tr
ans-diaminotetraphenylporphyrin (s, i
s-bis(9-aminophenyl)-10,-〇-diphenyl-2/H,2JH-porphine) was dissolved in 10 ml of N,N-dimethylacetamide and 0, . 202
? (0,927 mmol) of pyromellitic anhydride was added. This solution f was stirred at 20-23°C for 10 hours to obtain a solution of polyamic acid.
反応溶液を大量のメタノールへ投入することによシボリ
アミド酸の固体を得、N、N−ジメチルアセトアミド(
DMA C)中、30℃で固有粘度を測定したところ、
O,ダ5であった。ポリアミド酸の固体0.θ3632
を採取し、DMAcで希釈してsomlとした。さらK
この溶液をベンゼンで700m1に希釈し単分子膜製造
用の溶液とした。この溶液の濃度は、/ mmol/A
?である。By pouring the reaction solution into a large amount of methanol, a solid of cibolyamic acid was obtained, and N,N-dimethylacetamide (
When the intrinsic viscosity was measured at 30°C in DMA C),
It was O, da 5. Polyamic acid solid 0. θ3632
was collected and diluted with DMAc to make soml. Sara K
This solution was diluted to 700 ml with benzene to prepare a solution for monomolecular film production. The concentration of this solution is / mmol/A
? It is.
ポリアミド酸誘導体単分子膜の調製
前項で調製したポリアミド酸溶液0.3mlと、オクタ
デシルジメチルアミンのベンゼン、N、N−ジメチルア
セトアミドl二/混合溶液(/ mmo l/l)0.
t、mlf混合し、この溶液10Oμlを純水面上に展
開した。得られたポリアミド酸誘導体単分子膜の表面圧
−表面積直線を第1図に示す。次に、水面上の薄膜を、
20 mN/mの圧力下、垂直浸漬法を用いて石英基板
上に累積させた。Preparation of polyamic acid derivative monomolecular film 0.3 ml of the polyamic acid solution prepared in the previous section and a mixed solution of octadecyldimethylamine in benzene, N, N-dimethylacetamide (/l/mmol/l) 0.
t and mlf were mixed, and 100 μl of this solution was spread on the surface of pure water. The surface pressure-surface area line of the obtained polyamic acid derivative monomolecular film is shown in FIG. Next, the thin film on the water surface is
It was deposited on a quartz substrate using the vertical immersion method under a pressure of 20 mN/m.
第一図に石英基板上に累積したポリアミド酸誘導体単分
子累積膜の累積回数を変化させたときの可視吸収スペク
トル、および第3図に累積回数と、可視吸収スペクトル
におけるII 、70 nmの吸光係数の関係を示す。Figure 1 shows the visible absorption spectrum when the cumulative number of monomolecular polyamic acid derivative films accumulated on a quartz substrate is varied, and Figure 3 shows the cumulative number of times and the absorption coefficient of II and 70 nm in the visible absorption spectrum. shows the relationship between
このグラフが直線関係になることから、良好な累積が行
なわれ°ていることがわかる。また、吸収スペクトルの
形状は、別途通常の溶媒キャスト法で製造した、同じポ
リアミド酸誘導体の厚膜のものと一致した。Since this graph shows a linear relationship, it can be seen that good accumulation is being performed. In addition, the shape of the absorption spectrum was consistent with that of a thick film of the same polyamic acid derivative, which was separately produced by a normal solvent casting method.
第9図に7ノ化カルシウム板上に累積されたポリアミド
酸誘導体の透過型赤外吸収スペクトルを示す。このスペ
クトルの形状は、別途通常の溶媒キャスト法で製造した
、同じポリアミド酸誘導体の厚膜のものと一致した。FIG. 9 shows a transmission infrared absorption spectrum of a polyamic acid derivative accumulated on a calcium heptachloride plate. The shape of this spectrum was consistent with that of a thick film of the same polyamic acid derivative, which was separately produced by a conventional solvent casting method.
ポリイミド単分子累積膜の調製
前項で調製したポリアミド酸誘導体が累積した石英板を
、無水酢酸、ピリジン、ベンゼンが/:/:、?の割合
で混合された溶液に72時間浸漬した。浸漬後の単分子
累積膜の可視吸収スペクトルの累積回数による変化を第
S図に示す。Preparation of polyimide monomolecular cumulative film The quartz plate on which the polyamic acid derivative prepared in the previous section had been deposited was treated with acetic anhydride, pyridine, and benzene. It was immersed in a solution mixed at a ratio of 72 hours. Figure S shows changes in the visible absorption spectrum of the monomolecular cumulative film after immersion depending on the number of cumulative times.
また、可視吸収スペクトルにおける9 9 / Ilm
の吸光係数と累積回数との関係を第6図に示す。Also, 99/Ilm in the visible absorption spectrum
FIG. 6 shows the relationship between the extinction coefficient and the cumulative number of times.
このグラフが直線になることから、このポリイミド単分
子累積膜には前項で調製したポリアミド酸誘導体単分子
累積膜の累積構造が、そのまま反映されている。また、
吸収スペクトルの形状は、別途通常の溶液キャスト法で
製造した、同じポリアミド酸誘導体の厚膜を、前述の無
水酢酸、ピリジン、ベンゼンの混合溶媒に浸漬して製造
したポリイミド厚膜のものと一致した。Since this graph is a straight line, the cumulative structure of the polyamic acid derivative single molecule cumulative film prepared in the previous section is directly reflected in this polyimide single molecule cumulative film. Also,
The shape of the absorption spectrum was consistent with that of a polyimide thick film produced by immersing a thick film of the same polyamic acid derivative, which was separately produced by a conventional solution casting method, in the aforementioned mixed solvent of acetic anhydride, pyridine, and benzene. .
このことは、ポリアミド酸誘導体単分子累積膜がポリイ
ミド単分子累積膜に変換され、なおかつその過程におい
て、膜の剥離などが発生していないことを示している。This indicates that the polyamic acid derivative monomolecular cumulative film was converted into a polyimide monomolecular cumulative film, and that no peeling of the film occurred during the process.
さらて第7図にフッ化カルシウム板上に累積されたポリ
イミドの透過型赤外吸収スペクトルを示す。このスペク
トルの形状は、別途通常の溶媒キャスト法で製造した同
じポリアミド酸誘導体の厚膜全、前述の無水酢酸、ピリ
ジン、ベンゼンの混合溶媒に浸漬して製造したポリイミ
ド厚膜のものと一致した。シリコン基板上に累積された
単分子累積膜のエリプソメトリ−の測定から、屈折率は
/、911、層間距離は0.4層mであった。Furthermore, FIG. 7 shows a transmission type infrared absorption spectrum of polyimide accumulated on a calcium fluoride plate. The shape of this spectrum was consistent with that of a thick film of the same polyamic acid derivative separately produced by a conventional solvent casting method, and a polyimide thick film produced by immersing it in the aforementioned mixed solvent of acetic anhydride, pyridine, and benzene. Ellipsometry measurements of the monomolecular cumulative film deposited on the silicon substrate revealed that the refractive index was /,911, and the interlayer distance was 0.4 m.
A11里
第5図に示す装置によシ、前記のポリアミド酸を5n0
2電極上に累積して得られるポリイミド単分子累積膜の
光導電性を検討した。測定例ンの10mM/水溶液であ
る。o、sVの電位をかけたときの固有量子収率は、単
分子累積膜が7層、5層、10層のとき、それぞれ/、
7g。A11 The above-mentioned polyamic acid was added to 5n0 using the apparatus shown in Figure 5.
The photoconductivity of a polyimide monomolecular stacked film obtained by stacking on two electrodes was investigated. This is a 10mM/aqueous solution as a measurement example. When the monomolecular cumulative film has 7 layers, 5 layers, and 10 layers, the intrinsic quantum yield when applying a potential of o, sV is /, respectively.
7g.
0.92.0.A /となυ、薄いほど良くなることが
わかる。第7図は、照射光の波長と量子収率との関係で
あるか、このスペクトルは、前述の可視吸収スペクトル
と良く似ておシ、効率良く光が吸収されていることを示
している。第1O図Aは、ポリイミド単分子累積膜ヲ使
用したときの実験回数と、光電流の値との関係を示した
もので、第1θ図Bには、比較として低分子型のテトラ
フェニルポルフィリン単分子累積膜(t−(p−アミノ
フェニル)−10,15゜−〇−トリフェニルーコ/)
(、j、、?H−ポルフィンとステアリン酸のl:l混
合単分子累積膜〕を使用したときの実験回数と、光電流
の値との関係を示しである。あきらかに、ポリイミド単
分子累積膜を使用した方が、高い耐久性を示している。0.92.0. A / Tona υ, you can see that the thinner it is, the better it is. FIG. 7 shows the relationship between the wavelength of irradiated light and the quantum yield. This spectrum is very similar to the visible absorption spectrum described above, indicating that light is efficiently absorbed. Figure 10A shows the relationship between the number of experiments and the photocurrent value when using a polyimide monomolecular cumulative film, and Figure 10B shows the relationship between the number of experiments and the photocurrent value when using a polyimide monomolecular cumulative film. Molecular cumulative film (t-(p-aminophenyl)-10,15°-〇-triphenylruco/)
The figure shows the relationship between the number of experiments and the photocurrent value when using (l:l mixed monomolecular cumulative film of H-porphine and stearic acid). The use of membranes has shown higher durability.
実施例λ
0.3 & A P (0,’lワOmmol )のc
is−ジアミノテトラフェニルポルフィリン(Cu (
II))(!;、10−ビス(グーアミノフェニル〕−
75、コO−ジンエニルー2/H,2,3H−ポルフィ
リン(Cu(n))’e、6mlのN、N−ジメチルア
セトアミドに溶解し、 0. / 07 ?(0,’1
90mmol )の無水ピロメリット酸を加えた。こ
のf6 液k J o −2s ℃で10時間攪拌して
ポリアミド酸の溶液を得た。反応溶液を大量のメタン−
ルヘ投入することによシボリアミド酸の固体を得、N、
N−ジメチルアセトアミド(DMAC,1中、30℃で
固有粘度を測定したところ、0.62であった。ポリア
ミド酸の固体0.091’l?f採取し、DMAc で
希釈してSθmlとした。さらにこの溶液をベンゼンで
700m1tt希釈し単分子膜製造用の溶液とした。こ
の溶液の濃度は、/ mmo l/ lである。Example λ 0.3 & c of A P (0,'lwa Ommol)
is-diaminotetraphenylporphyrin (Cu (
II)) (!;, 10-bis(guaminophenyl)-
75, coO-ginenyl-2/H,2,3H-porphyrin (Cu(n))'e, dissolved in 6 ml of N,N-dimethylacetamide, 0. /07? (0,'1
90 mmol) of pyromellitic anhydride was added. This f6 solution was stirred at k J o -2s°C for 10 hours to obtain a solution of polyamic acid. Pour the reaction solution into a large amount of methane.
A solid of siboriamic acid was obtained by adding N,
The intrinsic viscosity was measured at 30°C in N-dimethylacetamide (DMAC, 1) and found to be 0.62. 0.091'l?f of polyamic acid solid was collected and diluted with DMAc to obtain Sθml. Further, this solution was diluted with benzene to 700ml to prepare a solution for monolayer production.The concentration of this solution was /mmol/l.
調製したポリアミド酸溶液o、、ymlと、オクタデシ
ルジメチルアミンのベンゼン、N、N−ジメチルアセト
アミドl:l混合溶液(i mmo L/l )0.4
1nlf混合し、この溶液100μlを純水面上に展開
した。The prepared polyamic acid solution o, yml and a mixed solution of octadecyldimethylamine in benzene, N,N-dimethylacetamide l:l (immo L/l) 0.4
1 nlf was mixed, and 100 μl of this solution was spread on the pure water surface.
次に、水面上の薄膜を20 mN/mの圧力下、垂直浸
漬法を用いて石英基板上に累積させた。The thin film on the water surface was then deposited on a quartz substrate using a vertical immersion method under a pressure of 20 mN/m.
石英基板上に累積したポリアミド酸誘導体単分子累積膜
の累積回数を変化させたときの可視吸収スペクトル、お
よび累積回数と可視吸収スペクトルにおける1I2J、
7層mの吸光係数の関係を示すグラフが直線関係になる
ことから、良好な累積が行なわれていることがわかる。Visible absorption spectrum when changing the cumulative number of polyamic acid derivative single molecule cumulative films accumulated on a quartz substrate, and 1I2J in the cumulative number and visible absorption spectrum,
Since the graph showing the relationship between the extinction coefficients of the 7 layers m is a linear relationship, it can be seen that good accumulation is performed.
また吸収スペクトルの形状は、別途通常の溶媒キャスト
法で製造した、同じポリアミド酸誘導体の厚膜のものと
一致した0
フッ化カルシウム板上に累積されたポリアミド酸誘導体
の透過型赤外吸収スペクトルの形状は、別途通常の溶媒
キャスト法で製造した、同じポリアミド酸誘導体の厚膜
のものと一致した。In addition, the shape of the absorption spectrum is the same as that of a thick film of the same polyamic acid derivative separately produced by a conventional solvent casting method. The shape was consistent with that of a thick film of the same polyamic acid derivative, which was separately manufactured by a conventional solvent casting method.
調製したポリアミド酸誘導体が累積した石英板を、無水
酢酸、ピリジン、ベンゼンが/:l:3の割合で混合さ
れた溶液に/、2時間浸漬した。A quartz plate on which the prepared polyamic acid derivative had been accumulated was immersed for 2 hours in a solution in which acetic anhydride, pyridine, and benzene were mixed at a ratio of 1:3.
浸漬後の単分子累積膜の可視吸収スペクトルの累積回数
による変化と、可視吸収スペクトルにおけるII 、?
/ nmの吸光係数と累積回数の関係を示すグラフが
直線になることから、このポリイミド単分子累積膜には
前項で調製したポリアミド酸誘導体単分子累積膜の累積
構造力;、そのまま反映されている。また、吸収スペク
トルの形状は、別途通常の溶液キャスト法で製造した、
同じポリアミド酸誘導体の厚膜を、前述の無水酢酸、ピ
リジン、ベンゼンの混合溶媒に浸漬して製造したポリイ
ミド厚膜のものと一致した。このことは、ポリアミド酸
誘導体単分子累積膜がポリイミド単分子累積膜に変換さ
れ、なおかつその過程において、膜の剥離などが発生し
ていないことを示している。フッ化カルシウム板上に累
積されたポリイミドの透過型赤外吸収スベク)/しの形
状は、別途通常の溶媒キャスト法で製造した、同じポリ
アミド酸誘導体の厚膜を、前述の無水酢酸、ピリジン、
ベンゼンの混合溶媒に浸漬して製造したポリイミド厚膜
のものと一致した。Changes in the visible absorption spectrum of the monomolecular cumulative film after immersion depending on the cumulative number of times, and II in the visible absorption spectrum, ?
Since the graph showing the relationship between the extinction coefficient of /nm and the number of accumulations is a straight line, this polyimide single molecule cumulative film reflects the cumulative structural force of the polyamic acid derivative single molecule cumulative film prepared in the previous section. . In addition, the shape of the absorption spectrum is determined by the shape of the
The results were consistent with those of the polyimide thick film produced by immersing a thick film of the same polyamic acid derivative in the aforementioned mixed solvent of acetic anhydride, pyridine, and benzene. This indicates that the polyamic acid derivative monomolecular cumulative film was converted into a polyimide monomolecular cumulative film, and that no peeling of the film occurred during the process. The shape of the transmission-type infrared absorption spectrum of polyimide accumulated on a calcium fluoride plate was obtained by applying a thick film of the same polyamic acid derivative separately produced by a conventional solvent casting method to the above-mentioned acetic anhydride, pyridine,
The results were consistent with those of polyimide thick films prepared by immersion in a mixed solvent of benzene.
実施例3
0.37 e t (OA; g Ommol )のc
is−ジアミノテトラフェニルポルフィリン(r、10
−ビス(グーアミノフェニル)−15,−〇−ジフェニ
ルー、2/H,コ3H−ポルフィン)を、6mlのN、
N−ジメチルアセトアミドに溶解し、0、/ 2 A
? (0,!; g Ommol )の無水ピロメリッ
ト酸を加えたOこの溶液を20−2 、!t ’Cで1
0時間攪拌してポリアミド酸の溶液を得た。Example 3 c of 0.37 et (OA; g Ommol )
is-diaminotetraphenylporphyrin (r, 10
-bis(guaminophenyl)-15,-〇-diphenyl, 2/H, co3H-porphine) was mixed with 6 ml of N,
Dissolved in N-dimethylacetamide, 0,/2 A
? (0,!; g Ommol) of pyromellitic anhydride was added to this solution at 20-2,! 1 at t'C
The mixture was stirred for 0 hours to obtain a solution of polyamic acid.
反応溶液を大量のメタノールへ投入するととKよりポリ
アミド酸の固体を得、 N、N−ジメチルアセトアミド
(DMAc)中、30℃で固有粘度を測定したところ、
o、、yoであった。ポリアミド酸の固体0.0g&、
?fを採取し% D MA Cで希釈してs o ml
とした。さらにこの溶液をベンゼンで700m1に希釈
し単分子膜製造用の溶液としだ。この溶液の濃度は%
/ rnfnol/Jである。When the reaction solution was poured into a large amount of methanol, a solid polyamic acid was obtained from K, and the intrinsic viscosity was measured at 30°C in N,N-dimethylacetamide (DMAc).
It was o,,yo. Polyamic acid solid 0.0g&,
? Collect f and dilute it with % MA C and add it to s o ml
And so. Furthermore, this solution was diluted with benzene to 700 ml and used as a solution for monomolecular film production. The concentration of this solution is %
/rnfnol/J.
調製したポリアミド酸溶液0.3mlと、オクタデシル
ジメチルアミンのベンゼン、 N、N−ジメチルアセト
アミドl:l混合溶液(/ mmol/l)o、tsm
lを混合し、この溶液iooμIt純水面上に展開した
。0.3 ml of the prepared polyamic acid solution and a mixed solution of octadecyldimethylamine in benzene and N,N-dimethylacetamide l:l (/mmol/l) o, tsm
This solution was spread on the surface of pure water.
次に、水面上の薄膜を一〇 mN/mの圧力下、垂直浸
漬法を用いてフッ化カルシウム板上に累積させた〇
フッ化カルシウム板上に累積されたポリアミド酸誘導体
の透過型赤外吸収スペクトルの形状は、別途通常の溶媒
キャスト法で製造した、同じポリアミド酸誘導体p厚膜
のものと一致した。Next, the thin film on the water surface was deposited on a calcium fluoride plate under a pressure of 10 mN/m using the vertical immersion method. Transmission infrared radiation of the polyamic acid derivative accumulated on the calcium fluoride plate The shape of the absorption spectrum was consistent with that of the same polyamic acid derivative P thick film separately produced by a conventional solvent casting method.
調製したポリアミド酸誘導体が累積した石英板を、無水
酢酸、ピリジン、ベンゼンかlニア:3の割合で混合さ
れた溶液に7.2時間浸漬した。石英板上に累積された
ポリイミドの透過型赤外吸収スペクトルの形状は、別途
通常の溶媒キャスト法で製造した、同じポリアミド酸誘
導体の厚膜を、前述の無水酢酸、ピリジン、ベンゼンの
混合溶媒に浸漬して製造したポリイミド厚膜のものと一
致した。A quartz plate on which the prepared polyamic acid derivative had been accumulated was immersed for 7.2 hours in a solution containing acetic anhydride, pyridine, and benzene mixed at a ratio of 1:3. The shape of the transmission infrared absorption spectrum of polyimide accumulated on a quartz plate can be determined by applying a thick film of the same polyamic acid derivative, which was separately produced by a conventional solvent casting method, to the aforementioned mixed solvent of acetic anhydride, pyridine, and benzene. It was consistent with that of polyimide thick film prepared by dipping.
本発明の単分子膜もしくは単分子累積膜は光電変換、磁
性、ガスセンシング等の機能を有し、かつ機械的強度、
耐熱性、耐薬品性に優れている。このような単分子膜も
しくは単分子累積膜は光電変換素子、記憶・記録素子、
ガスセンサー等への応用が可能であり、工業的価値が高
い。The monomolecular film or monomolecular cumulative film of the present invention has functions such as photoelectric conversion, magnetism, and gas sensing, and has mechanical strength and
Excellent heat resistance and chemical resistance. Such monomolecular films or monomolecular cumulative films can be used for photoelectric conversion elements, memory/recording elements,
It can be applied to gas sensors, etc., and has high industrial value.
ダ 図の簡単な説明
第1図は本発明におけるポリアミド酸誘導体単分子膜の
表面圧と面積との関係を示す。第2図はポリアミド酸誘
導体単分子累積膜の可視吸収スペクトルの累積回数によ
る変化を示し、第3図はポリアミド酸誘導体単分子累積
膜の累積回数と吸光係数(Q30nm)との関係を示す
。BRIEF DESCRIPTION OF THE FIGURES FIG. 1 shows the relationship between the surface pressure and area of the polyamic acid derivative monomolecular film in the present invention. FIG. 2 shows the change in the visible absorption spectrum of the polyamic acid derivative single molecule cumulative film depending on the cumulative number of times, and FIG. 3 shows the relationship between the cumulative number of times and the extinction coefficient (Q30 nm) of the polyamic acid derivative single molecule cumulative film.
第4図はポリアミド酸誘導体単分子累積膜のFT−IR
スペクトルを示す。第S図はポリイミド単分子累積膜の
可視吸収スペクトルの累積回数による変化を示し、第6
図はポリイミド単分子累積膜の累積回数と吸光係数(l
lグ/nm)との関係を示す。第7図はポリイミド単分
子累積膜のFT−IFtスペクトルを示す。第S図はポ
リイミド単分子累積膜の光導電性測定装置の概略を示す
。第ざ図中、/はポリイミド単分子累積Mを累積した5
YLO2電極、2は対電極(金線)、3は参照電極、ダ
はシャッター、Sは分光器、6はsoowキセノンラン
プ、7はポテンショスタット、ざは10mMヒドロキノ
ン水溶液(pHQ)、’はレコーダーを示す。第7図は
ポリイミド単分子累積膜の光導電性の量子ルフイリン含
有単分子累積膜の光電流と実験回数との関係を示す(A
:ポルフィリン含有ポリイミド単分子累積膜、B:低分
子ポルフィリンとステアリン酸との混合単分子累積膜)
。Figure 4 shows FT-IR of a monomolecular cumulative film of polyamic acid derivatives.
The spectrum is shown. Figure S shows changes in the visible absorption spectrum of a polyimide monomolecular cumulative film depending on the number of cumulative
The figure shows the cumulative number of polyimide monomolecular cumulative films and the extinction coefficient (l
1g/nm). FIG. 7 shows the FT-IFt spectrum of a polyimide monomolecular cumulative film. FIG. S schematically shows an apparatus for measuring photoconductivity of a polyimide monomolecular cumulative film. In the diagram, / represents 5 cumulative polyimide single molecule M.
YLO2 electrode, 2 is the counter electrode (gold wire), 3 is the reference electrode, da is the shutter, S is the spectrometer, 6 is the soow xenon lamp, 7 is the potentiostat, za is the 10mM hydroquinone aqueous solution (pHQ), ' is the recorder show. Figure 7 shows the relationship between the photocurrent and the number of experiments for a photoconductive quantum lufilin-containing monomolecular cumulative film of polyimide (A
: porphyrin-containing polyimide monomolecular cumulative film, B: mixed monomolecular cumulative film of low molecular weight porphyrin and stearic acid)
.
出 願 人 三菱化成工業株式会社 今 井 淑 夫 柿 本 雅 明 代 理 人 弁理士 長谷用 − (ほか1名) 反面F、(mN/ln ) 第 22 渓長(nrn) 昂3図 應オ貢出4文 (り) 慾 5ニ ス長(nm) ’* 乙 図 累積回収(卸 明光ヨ支 し1 英 6 図 遇10 ニ ス験冗奴(凹)Sender: Mitsubishi Chemical Industries, Ltd. Yoshio Imai Persimmon Hon Miyabi Akira Representative Patent Attorney Hase - (1 other person) On the other hand F, (mN/ln) No. 22 Keicho (nrn) Kō 3 diagram 4 sentences of contribution (ri) Desire 5 ni length (nm) ’* Otsu Figure Cumulative collection (wholesale) Meiko Yo branch 1 English 6 diagram Encounter 10 d Sugenjakko (concave)
Claims (1)
環を含む2価の有機基を示す) で表される反復単位を有するポリイミドを構成成分とす
る単分子膜もしくは単分子累積膜。(1) General formula (I) ▲Mathematical formulas, chemical formulas, tables, etc.▼・・・・・・(I) (In the formula, R^1 is a tetravalent organic group, and R^2 is a divalent organic group containing a porphyrin ring. A monomolecular film or monomolecular cumulative film whose constituent component is polyimide having a repeating unit represented by (representing an organic group).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63070721A JPH01242630A (en) | 1988-03-24 | 1988-03-24 | Monomolecular film or monomolecular built-up film having porphyrin structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63070721A JPH01242630A (en) | 1988-03-24 | 1988-03-24 | Monomolecular film or monomolecular built-up film having porphyrin structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01242630A true JPH01242630A (en) | 1989-09-27 |
Family
ID=13439704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63070721A Pending JPH01242630A (en) | 1988-03-24 | 1988-03-24 | Monomolecular film or monomolecular built-up film having porphyrin structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01242630A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096557A (en) * | 1996-08-14 | 2000-08-01 | Ebara Corporation | Gas detection method and apparatus using gas reactive pigment |
CN101787130A (en) * | 2010-03-04 | 2010-07-28 | 浙江大学 | Polyimide containing porphyrin, preparation method and application thereof |
CN104897739A (en) * | 2015-06-18 | 2015-09-09 | 济南大学 | Organic semiconductor nanomaterial, preparation method and application of organic semiconductor nanomaterial as well as nitrogen dioxide gas sensor |
CN105289734A (en) * | 2015-10-28 | 2016-02-03 | 湖南大学 | Method for degrading organic dye through metal organic framework film based on metalloporphyrin |
CN113773488A (en) * | 2021-09-06 | 2021-12-10 | 大连理工大学 | Preparation method of water-soluble polyporphyrin carrier-free nano-drug |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01101330A (en) * | 1987-10-14 | 1989-04-19 | Kanegafuchi Chem Ind Co Ltd | Functional amphoteric polymeric compound and production thereof |
-
1988
- 1988-03-24 JP JP63070721A patent/JPH01242630A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01101330A (en) * | 1987-10-14 | 1989-04-19 | Kanegafuchi Chem Ind Co Ltd | Functional amphoteric polymeric compound and production thereof |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096557A (en) * | 1996-08-14 | 2000-08-01 | Ebara Corporation | Gas detection method and apparatus using gas reactive pigment |
CN101787130A (en) * | 2010-03-04 | 2010-07-28 | 浙江大学 | Polyimide containing porphyrin, preparation method and application thereof |
CN104897739A (en) * | 2015-06-18 | 2015-09-09 | 济南大学 | Organic semiconductor nanomaterial, preparation method and application of organic semiconductor nanomaterial as well as nitrogen dioxide gas sensor |
CN105289734A (en) * | 2015-10-28 | 2016-02-03 | 湖南大学 | Method for degrading organic dye through metal organic framework film based on metalloporphyrin |
CN113773488A (en) * | 2021-09-06 | 2021-12-10 | 大连理工大学 | Preparation method of water-soluble polyporphyrin carrier-free nano-drug |
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