JPH0313304B2 - - Google Patents

Info

Publication number
JPH0313304B2
JPH0313304B2 JP55099956A JP9995680A JPH0313304B2 JP H0313304 B2 JPH0313304 B2 JP H0313304B2 JP 55099956 A JP55099956 A JP 55099956A JP 9995680 A JP9995680 A JP 9995680A JP H0313304 B2 JPH0313304 B2 JP H0313304B2
Authority
JP
Japan
Prior art keywords
thin plate
pattern
mask
thin
reinforcing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55099956A
Other languages
Japanese (ja)
Other versions
JPS5726163A (en
Inventor
Minoru Tanaka
Hitoshi Kubota
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9995680A priority Critical patent/JPS5726163A/en
Publication of JPS5726163A publication Critical patent/JPS5726163A/en
Publication of JPH0313304B2 publication Critical patent/JPH0313304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

【発明の詳細な説明】 本発明は蒸着、又はスパツタリング等の薄膜形
成技術により、所定の薄膜パターンを基板に付着
させる際に使用する薄膜形成用マスクの製造方法
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film forming mask used when attaching a predetermined thin film pattern to a substrate by thin film forming techniques such as vapor deposition or sputtering.

蒸着又は、スパツタリング等の薄膜形成技術に
より所定の形状をした薄膜パターンを基板表面に
付着させる場合、所定の孔形状を有する板状のマ
スクを用いる。
When a thin film pattern having a predetermined shape is attached to a substrate surface by a thin film forming technique such as vapor deposition or sputtering, a plate-shaped mask having a predetermined hole shape is used.

従来、この所定形状の孔を有するマスクとして
は、金属板をプレス加工あるいはフオトエツチン
グ技術を用いて腐食抜き(エツチング)加工した
ものが一般的に用いられている。しかしプレス加
工では微細でかつ複雑な孔形状の加工はほとんど
不可能であり、一方金属板の腐食抜き加工ではプ
レス加工に比較した場合、複雑な孔形状の加工は
容易であるが、該孔形状の寸法精度は一般には該
金属板板厚の±10%程度であり、例えば0.1mmの
板厚の金属板を用いた場合の寸法精度は±10μm
程度となるため、微細でかつ高度なパターン合わ
せ精度の要求に十分応えることはできなかつた。
又このような金属板を腐食抜き加工した場合の孔
形状の最小寸法は一般に該金属板の板厚と同程度
であり板厚より小さい寸法のパターン孔をあける
ことはほとんど不可能である。従つて微細パター
ンを形成するにはマスクを薄くしなければならな
い。しかし単にマスクを薄くすることは強度的に
困難であり、また薄くする程マスクに撓みが生じ
形状や寸法が狂つてくる。
Conventionally, masks having holes of a predetermined shape have generally been made by pressing a metal plate or etching the metal plate using a photo-etching technique. However, in press working, it is almost impossible to process minute and complicated hole shapes, while in corrosion removal processing of metal plates, it is easier to process complicated hole shapes compared to press working, but the hole shape The dimensional accuracy is generally about ±10% of the thickness of the metal plate, for example, when using a metal plate with a thickness of 0.1 mm, the dimensional accuracy is ±10 μm.
Therefore, it was not possible to sufficiently meet the demand for fine and high pattern alignment accuracy.
Furthermore, when such a metal plate is subjected to corrosion removal processing, the minimum dimension of the hole shape is generally approximately the same as the thickness of the metal plate, and it is almost impossible to form pattern holes with dimensions smaller than the thickness of the metal plate. Therefore, in order to form fine patterns, the mask must be made thinner. However, simply making the mask thinner is difficult in terms of strength, and the thinner the mask becomes, the more the mask becomes warped and its shape and dimensions become distorted.

上記した、これらの欠点を解決するマスクとし
て第1図に示すような、薄板1にパターンの孔2
を設け、前記薄板1の孔部2及びその周辺の開口
部3を除いた部分に補強材4を前記薄板1と一体
的に設けた二枚構造のマスクがすでに考えられて
いる。第1図のような従来のマスクによればパタ
ーンの孔を設ける薄板の板厚が、従来の一枚構造
の金属板の板厚に比較して格段に薄くでき、かつ
補強材を備えているため、前記した一枚構造の金
属板の従来の欠点を解決することができる。
As a mask to solve these drawbacks mentioned above, a pattern of holes 2 is formed in a thin plate 1 as shown in FIG.
A mask having a two-layer structure has already been considered, in which a reinforcing material 4 is provided integrally with the thin plate 1 in a portion of the thin plate 1 excluding the hole 2 and the opening 3 around it. According to the conventional mask shown in Figure 1, the thickness of the thin plate on which the patterned holes are formed can be made much thinner than the thickness of the conventional single-layer metal plate, and it is also equipped with a reinforcing material. Therefore, the above-mentioned conventional drawbacks of the one-piece metal plate can be solved.

しかし、蒸着やスパツタリングでマスクを介し
て所定のパターン形状を形成しようとする場合、
加熱粒子の衝突によりマスク温度は自然に上昇す
る。更に、薄膜の基板への付着強度を上げるため
基板を300℃〜400℃に加熱して薄膜を形成すれば
マスクもその影響を受けて数百度Cに加熱される
こともある。このような場合第1図に示すような
二枚構造のマスクにおいては、薄板1と補強材4
とは材質が異なるため、それぞれの熱膨張係数の
違いにより、薄板1に設けたパターンの孔2の寸
法や形状が変化したり、マスク自体にそりが生ず
るという新たな実用上の問題が生じる。
However, when trying to form a predetermined pattern shape through a mask by vapor deposition or sputtering,
The mask temperature naturally increases due to the collision of heated particles. Furthermore, if the thin film is formed by heating the substrate to 300° C. to 400° C. in order to increase the adhesion strength of the thin film to the substrate, the mask may also be heated to several hundred degrees Celsius under the influence of the heating. In such a case, in a mask with a two-layer structure as shown in Fig. 1, the thin plate 1 and the reinforcing material 4
Since the materials are different from each other, new practical problems arise such as the size and shape of the holes 2 in the pattern formed in the thin plate 1 changing or warping occurring in the mask itself due to the difference in their thermal expansion coefficients.

本発明の目的は、従来の問題点を解決すべく、
基板に薄膜形成するパターン形状を決めるパター
ン孔を形成する薄板を極力薄くして高精度微細寸
法のパターン膜を基板上に形成させると共に薄板
への微細で且つ高精度のパターン孔加工を実現さ
せ、しかも強度的に強く、熱変形も比較的少なく
実用上の使用に耐えうる薄膜形成用マスクを得る
ことができるようにした薄膜形成用マスクの製造
方法を提供することにある。
The purpose of the present invention is to solve the conventional problems.
A thin plate for forming pattern holes that determine the shape of a pattern to be formed on a thin film on a substrate is made as thin as possible to form a pattern film with high precision and minute dimensions on the substrate, and at the same time realizing fine and highly accurate pattern hole processing in the thin plate, Moreover, it is an object of the present invention to provide a method for manufacturing a thin film forming mask that is strong in strength, has relatively little thermal deformation, and can withstand practical use.

即ち、本発明は、上記目的を達成するために、
材質の異なる複数の補強用薄板を積層して一体化
した合板構造の補強材の片面上に、パターン孔を
設ける薄板を蒸着、スパツタリング、気相成長、
液相成長、メツキのいずれかにより形成し、上記
補強材について上記パターン孔部及びその周辺部
をエツチングにより取り除き、取り除かれた部分
のほぼ中心部に上記薄板に対して上記パターン孔
をエネルギービーム加工によつて形成することを
特徴とする薄膜形成用マスクの製造方法である。
That is, in order to achieve the above object, the present invention has the following features:
A thin plate with patterned holes is deposited, sputtered, vapor-phase grown,
The reinforcing material is formed by either liquid phase growth or plating, and the pattern hole and its surrounding area are removed by etching, and the pattern hole is formed in the thin plate approximately at the center of the removed portion by energy beam processing. 1 is a method of manufacturing a mask for forming a thin film, characterized in that the mask is formed by a method of manufacturing a mask for forming a thin film;

以下本発明を第2図乃至第3図に示す実施例に
従つて具体的に説明する。
The present invention will be specifically described below with reference to the embodiments shown in FIGS. 2 and 3.

第2図は本発明による薄膜形成用マスクの断面
図を示すもので補強材部分が二層構造の例であ
る。図において薄板1にパターンの孔2が設けら
れており、薄板1にそれと一体的に構成されてい
る補強材4が設けられ、補強材の前記薄板1のパ
ターン孔部2およびその周辺は取り除かれて開口
部3となつている。補強材4は補強用薄板5,6
により一体的に構成され合板構造となつている。
補強用薄板5は、薄板1とは選択エツチンが可能
なように材質が異なつている。補強用薄板6は、
補強用薄板5とは材質が異なつているが、薄板1
とは材質が同じでも、異なつていてもかまわな
い。又、補強材4を構成する補強用薄板5,6の
積層数は二層に限定するものではない。薄板1お
よび補強材4の厚さは、パターン孔2の寸法、精
度、マスクの大きさ、マスクの取扱い条件等種々
の要因によつて決定される。
FIG. 2 shows a cross-sectional view of a mask for forming a thin film according to the present invention, and shows an example in which the reinforcing material portion has a two-layer structure. In the figure, a thin plate 1 is provided with a pattern of holes 2, a reinforcing member 4 is provided integrally with the thin plate 1, and the patterned hole portion 2 of the thin plate 1 of the reinforcing material and its surroundings are removed. This forms an opening 3. The reinforcing material 4 is a reinforcing thin plate 5, 6
It is integrally constructed of plywood.
The reinforcing thin plate 5 is made of a different material from the thin plate 1 so that selective etching is possible. The reinforcing thin plate 6 is
Although the material is different from the reinforcing thin plate 5, the thin plate 1
It doesn't matter if the material is the same or different. Further, the number of laminated reinforcing thin plates 5 and 6 constituting the reinforcing material 4 is not limited to two layers. The thickness of the thin plate 1 and the reinforcing material 4 is determined by various factors such as the size and precision of the pattern holes 2, the size of the mask, and the handling conditions of the mask.

次にこのような薄膜形成用マスクの製造方法に
ついて説明する。
Next, a method of manufacturing such a mask for forming a thin film will be explained.

蒸着やスパツタリング、メツキ等の薄膜形成技
術、薄板の圧接技術、あるいは両者の組合せ技術
によつて得られた補強用薄板5,6を積層一体化
した合板構造の補強材4の片面に、薄板1を形成
する。薄板1の形成は、蒸着、スパツタリング、
気相成長、液相成長、メツキ等のいずれについて
も可能である。エツチングによりパターン孔を形
成する方法について説明する。
A thin plate 1 is placed on one side of a reinforcing material 4 having a plywood structure in which reinforcing thin plates 5 and 6 are laminated and integrated by a thin film forming technique such as vapor deposition, sputtering, or plating, a thin plate pressure welding technique, or a combination of the two. form. The thin plate 1 is formed by vapor deposition, sputtering,
Any of vapor phase growth, liquid phase growth, plating, etc. is possible. A method of forming pattern holes by etching will be explained.

第2図に示すような補強材4が二層構造で、し
かも薄板1と補強用薄板6とが同じ材質の場合、
まずマスクの両面にフオトレジストを塗布し、露
光、現像によつて薄板1側には所定のパターン形
状を、補強用薄板6側には前記パターン形状が中
心にきて、かつ前記パターンより少し大きめの開
口部形状を形成する。次に薄板1、補強用薄板
6、補強用薄板5、フオトレジストの中で薄板
1、補強用薄板6に対して最もエツチング速度の
大きい、ある特定のエツチング液によりパターン
の孔2、および開口部3の一部をあける。次に前
記エツチング液とは異なる補強用薄板5に対して
最もエツチング速度が大きく薄板1、補強用薄板
6、フオトレジストに対してエツチング速度の小
さいエツチング液により補強用薄板6の部分の開
口部3をエツチング除去する。
When the reinforcing material 4 has a two-layer structure as shown in FIG. 2, and the thin plate 1 and the reinforcing thin plate 6 are made of the same material,
First, photoresist is applied to both sides of the mask, and by exposure and development, a predetermined pattern shape is formed on the thin plate 1 side, and the pattern shape is centered on the reinforcing thin plate 6 side, and is slightly larger than the pattern. form the opening shape. Next, the holes 2 and openings in the pattern are etched using a certain etching solution that has the highest etching speed for the thin plate 1, the reinforcing thin plate 6, the reinforcing thin plate 5, and the photoresist. Open part of 3. Next, the opening 3 in the portion of the reinforcing thin plate 6 is etched using an etching liquid that has the highest etching speed for the thin reinforcing plate 5 and has a slow etching speed for the thin plate 1, the thin reinforcing plate 6, and the photoresist. Remove by etching.

又、前述した方法とは異なる別のマスク製造方
法として薄板1の表面をフオトレジストにより全
面マスキングして補強材側から順次補強用薄板を
エツチング除去して、開口部3をあけた後、最後
に開口部3の薄板1の中央部にエツチング、レー
ザ加工、電子ビーム加工等の技術によりパターン
の孔を設けることもできる。
In addition, as another mask manufacturing method different from the method described above, the surface of the thin plate 1 is entirely masked with a photoresist, the reinforcing thin plates are sequentially removed from the reinforcing material side, and the opening 3 is opened, and finally, It is also possible to provide a pattern of holes in the center of the thin plate 1 in the opening 3 by techniques such as etching, laser processing, electron beam processing, etc.

又、逆に薄板1にパターン孔2を先に加工し
て、後から補強材4に開口部3をあけることもで
きる。この場合も必要があればパターン孔2を加
工した後、薄板1の表面に全面フオトレジストを
塗布してマスキングし、次に開口部3をあけても
よい。
Alternatively, the pattern holes 2 can be formed in the thin plate 1 first, and the openings 3 can be formed in the reinforcing material 4 later. In this case as well, if necessary, after forming the pattern holes 2, the entire surface of the thin plate 1 may be coated with photoresist for masking, and then the openings 3 may be formed.

補強材4に開口部3を設ける他の方法として補
強材の表面に前述のレジストパターンの代りに酸
化膜パターンを形成し、エツチングを行う方法も
ある。
Another method for providing the openings 3 in the reinforcing material 4 is to form an oxide film pattern on the surface of the reinforcing material instead of the above-mentioned resist pattern and then etching it.

今までは、1個のパターン孔についてのみ述べ
てきたが、実際に薄膜パターンを形成する場合、
生産効率を考慮し、1枚のマスクに多数のパター
ンを設けることが多い。第3図は、このような場
合の実施例である。繰返し周期lはレジスト膜の
精度あるいはレーザ加工、電子ビーム加工の精度
によつて決まる。又、1枚のマスク内のパターン
孔形状は全てを同形状にしてもよいし、目的によ
つては数値類の形状を含むことも可能である。
So far, we have only talked about one pattern hole, but when actually forming a thin film pattern,
In consideration of production efficiency, many patterns are often provided on one mask. FIG. 3 shows an example of such a case. The repetition period l is determined by the accuracy of the resist film or the accuracy of laser processing or electron beam processing. Further, all the pattern holes in one mask may have the same shape, and depending on the purpose, it is also possible to include shapes of numerical values.

以上述べたように本発明によれば、基板に薄膜
形成するパターン形状を決めるパターン孔を形成
する薄板を極力薄くして高精度微細寸法のパター
ン膜を基板上に形成させると共に薄板への微細で
且つ高精度のパターン孔加工を実現させ、しかも
強度的に強く、熱変形も比較的少なく実用上の使
用に耐えうる薄膜形成用マスクを得ることができ
る作用効果を奏する。
As described above, according to the present invention, the thin plate that forms the pattern holes that determine the shape of the pattern to be formed on the thin film on the substrate is made as thin as possible to form a pattern film with high precision and fine dimensions on the substrate, and at the same time, it is possible to form the thin plate with fine dimensions on the thin plate. In addition, it is possible to obtain a mask for forming a thin film that can realize highly accurate pattern hole machining, is strong in strength, has relatively little thermal deformation, and can withstand practical use.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の実施例を示す断面図、第2図は
本発明の実施例を示す断面図、第3図は繰返し周
期lで加工されたマスクの他の実施例を示す断面
図である。 1……薄板、2……パターンの孔、3……開口
部、4……補強材、5,6……補強用薄板。
FIG. 1 is a sectional view showing a conventional embodiment, FIG. 2 is a sectional view showing an embodiment of the present invention, and FIG. 3 is a sectional view showing another embodiment of a mask processed at a repetition period l. . 1... Thin plate, 2... Pattern hole, 3... Opening, 4... Reinforcement material, 5, 6... Thin plate for reinforcement.

Claims (1)

【特許請求の範囲】[Claims] 1 材質の異なる複数の補強用薄板を積層して一
体化した合板構造の補強材の片面上に、パターン
孔を設ける薄板を蒸着、スパツタリング、気相成
長、液相成長、メツキのいずれかにより形成し、
上記補強材について上記パターン孔部及びその周
辺部をエツチングにより取り除き、取り除かれた
部分のほぼ中心部に上記薄板に対して上記パター
ン孔をエネルギービーム加工によつて形成するこ
とを特徴とする薄膜形成用マスクの製造方法。
1. A thin plate with patterned holes is formed on one side of a reinforcing material with a plywood structure made by laminating and integrating multiple reinforcing thin plates of different materials by vapor deposition, sputtering, vapor phase growth, liquid phase growth, or plating. death,
Thin film formation characterized in that the pattern hole and its surrounding area are removed from the reinforcing material by etching, and the pattern hole is formed in the thin plate approximately at the center of the removed portion by energy beam processing. Method of manufacturing masks for use.
JP9995680A 1980-07-23 1980-07-23 Mask for forming thin film and its manufacture Granted JPS5726163A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9995680A JPS5726163A (en) 1980-07-23 1980-07-23 Mask for forming thin film and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9995680A JPS5726163A (en) 1980-07-23 1980-07-23 Mask for forming thin film and its manufacture

Publications (2)

Publication Number Publication Date
JPS5726163A JPS5726163A (en) 1982-02-12
JPH0313304B2 true JPH0313304B2 (en) 1991-02-22

Family

ID=14261136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9995680A Granted JPS5726163A (en) 1980-07-23 1980-07-23 Mask for forming thin film and its manufacture

Country Status (1)

Country Link
JP (1) JPS5726163A (en)

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* Cited by examiner, † Cited by third party
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JPS58170074A (en) * 1982-03-31 1983-10-06 Hoxan Corp Surface electrode depositing method by direct masking system of solar battery and depositing jig
JP4364957B2 (en) * 1998-10-22 2009-11-18 北陸電気工業株式会社 Evaporation mask
KR100469252B1 (en) * 2002-04-12 2005-02-02 엘지전자 주식회사 Shadow Mask and Full Color Organic Electroluminescence Display Device Using the same
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JP4170179B2 (en) * 2003-01-09 2008-10-22 株式会社 日立ディスプレイズ Organic EL panel manufacturing method and organic EL panel
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KR101442941B1 (en) * 2010-03-09 2014-09-22 샤프 가부시키가이샤 Vapor deposition mask, vapor deposition apparatus and vapor deposition method
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JP6515520B2 (en) * 2014-12-15 2019-05-22 大日本印刷株式会社 Method of manufacturing vapor deposition mask, metal plate used for producing vapor deposition mask, and vapor deposition mask
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US11773477B2 (en) 2018-12-25 2023-10-03 Dai Nippon Printing Co., Ltd. Deposition mask
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4313689Y1 (en) * 1965-10-28 1968-06-11
JPS4727897U (en) * 1971-04-15 1972-11-29

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4313689Y1 (en) * 1965-10-28 1968-06-11
JPS4727897U (en) * 1971-04-15 1972-11-29

Also Published As

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