JPH0311737A - Solid phase epitaxy - Google Patents
Solid phase epitaxyInfo
- Publication number
- JPH0311737A JPH0311737A JP14771089A JP14771089A JPH0311737A JP H0311737 A JPH0311737 A JP H0311737A JP 14771089 A JP14771089 A JP 14771089A JP 14771089 A JP14771089 A JP 14771089A JP H0311737 A JPH0311737 A JP H0311737A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- single crystal
- electrode film
- solid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000348 solid-phase epitaxy Methods 0.000 title 1
- 239000007790 solid phase Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 150000002739 metals Chemical class 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000013508 migration Methods 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 1
- 229910018594 Si-Cu Inorganic materials 0.000 abstract 1
- 229910008465 Si—Cu Inorganic materials 0.000 abstract 1
- 229910008484 TiSi Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- -1 TiN Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は集積回路装置における電極膜に関する［従来の
技術］
従来、８１基板上のＳ ｉ ｏｔ膜を介してＡｔ電極を
形成し、該Ａｔ電極をレーザービーム等の量子ビーム
アニールにより羊結晶化してエレクトロ マイグレーシ
田ン耐性を得る方法が用いられ［発明が解決しようとす
る課ｆｆｌ］
しかし、上記従来技術によると、エレクトロマイグレー
シフン耐性が充分でないという課題や、生産性が悪い等
の課題もあった。Detailed Description of the Invention [Industrial Field of Application] The present invention relates to an electrode film in an integrated circuit device [Prior Art] Conventionally, an At electrode is formed via a Si ot film on an 81 substrate, and the At Quantum beams such as laser beams with electrodes
A method of obtaining resistance to electromigration by crystallization by annealing is used [issues to be solved by the inventionffl] However, according to the above-mentioned conventional technology, there are problems such as insufficient resistance to electromigration and poor productivity. There were also other issues.
本発明はかかる従来技術の課題を解決し、エレクトロ
マイグレーシｌン耐性の良好な集積回路装置における電
極膜を生産性良く提供する事を目的とする。The present invention solves the problems of the prior art and
The object of the present invention is to provide an electrode film for an integrated circuit device that has good resistance to migration and is highly productive.
［課題を解決するための手段］
本発明はかかる従来技術、の課題を解決し、本発明の目
的を達成するために、電極膜を固相エピタキシャルによ
る単結晶電極膜と成す事を基本とする。[Means for Solving the Problems] In order to solve the problems of the prior art and achieve the object of the present invention, the present invention is based on forming an electrode film as a single crystal electrode film by solid phase epitaxial method. .
［実施例］ 以下、★施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail using ★ Examples.
いま、Ｓ１拳結晶基板上に８１０！膜等の絶縁膜を介し
て、該絶縁膜に開けられたコンタクト穴を通してＡＡ、
Ａｔ−３ｉ 、Ａｔ−５ｉ−Ｏｕ等の電極膜を蒸着等に
て形成後、該電極膜をホト・エツチング等の加工処理を
施して不活性雰囲気中にて加熱処理を施すと、固相エピ
タキシャルにより単結晶化する事ができる。但し、ホト
・エツチング加工前に蒸着中あるいは、不活性雰囲気中
等で加熱処理を施しても良い。Now, 810 on the S1 fist crystal board! AA, through a contact hole made in the insulating film,
After forming an electrode film of At-3i, At-5i-Ou, etc. by vapor deposition, etc., the electrode film is subjected to processing such as photo-etching and then heat-treated in an inert atmosphere to form a solid phase epitaxial layer. It can be made into a single crystal. However, heat treatment may be performed during vapor deposition or in an inert atmosphere before photo-etching.
なお、電極膜はＡＡやｈＬ合金の他、Ｔ１゜ＴｉＳｉ、
ＴｉＮ、Ｗ、ＷＳｉ、Ｍｏ、ＭｏＳｉ、Ｏｕ等の他の金
属や合金あるいは、これら金属や合金の多層膜や部分的
多層膜等であっても良いる単結晶化が少なくとも２ミク
ロン以上進み、コンタクト穴間隔が４ミクロン以下の場
合にはコンタクト穴間隔の中央にて単結晶が互いに衝突
し、結晶粒界を形成する場合もあるが、その場合でもヱ
ルクトロマイグレーション耐性を向上する事カできる。In addition to AA and hL alloy, the electrode film is made of T1゜TiSi,
Other metals or alloys such as TiN, W, WSi, Mo, MoSi, Ou, etc., or multilayer films or partial multilayer films of these metals or alloys may be formed. Single crystallization progresses to at least 2 microns or more, and contact is formed. When the hole spacing is 4 microns or less, single crystals may collide with each other at the center of the contact hole spacing, forming grain boundaries, but even in that case, the electromigration resistance can be improved.
［発明の効果］
本発明により、エレクトロ マイグレーシコン耐性の良
好な集積回路装置における電極配線を生産住良（形成で
き、提供することができる効果がある。[Effects of the Invention] The present invention has the advantage that it is possible to form and provide electrode wiring in an integrated circuit device with good electromigration resistance.
さらに、前記Ｓ１単結晶基板は下層電極であっても良く
、電極上に８１０８等の絶縁膜を形゛成後、固相エピタ
キシャルに′より嚇結晶化しても良い以上Furthermore, the S1 single crystal substrate may be a lower layer electrode, and after forming an insulating film such as 8108 on the electrode, it may be crystallized by solid phase epitaxial method.
Claims (1)
単結晶膜と成す事を特徴とする固相エピタキシャル。A solid-phase epitaxial method characterized by forming a single-crystalline electrode film that is connected to a semiconductor or an electrode via an insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14771089A JPH0311737A (en) | 1989-06-09 | 1989-06-09 | Solid phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14771089A JPH0311737A (en) | 1989-06-09 | 1989-06-09 | Solid phase epitaxy |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0311737A true JPH0311737A (en) | 1991-01-21 |
Family
ID=15436465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14771089A Pending JPH0311737A (en) | 1989-06-09 | 1989-06-09 | Solid phase epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0311737A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429519B1 (en) | 1997-04-03 | 2002-08-06 | International Business Machines Corporation | Wiring structures containing interconnected metal and wiring levels including a continuous, single crystalline or polycrystalline conductive material having one or more twin boundaries |
| CN100435284C (en) * | 2004-06-09 | 2008-11-19 | 海力士半导体有限公司 | Semiconductor device with low contact resistance and method for fabricating the same |
| JP2011009595A (en) * | 2009-06-29 | 2011-01-13 | Renesas Electronics Corp | Semiconductor device and method of manufacturing the same |
-
1989
- 1989-06-09 JP JP14771089A patent/JPH0311737A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6429519B1 (en) | 1997-04-03 | 2002-08-06 | International Business Machines Corporation | Wiring structures containing interconnected metal and wiring levels including a continuous, single crystalline or polycrystalline conductive material having one or more twin boundaries |
| CN100435284C (en) * | 2004-06-09 | 2008-11-19 | 海力士半导体有限公司 | Semiconductor device with low contact resistance and method for fabricating the same |
| JP2011009595A (en) * | 2009-06-29 | 2011-01-13 | Renesas Electronics Corp | Semiconductor device and method of manufacturing the same |
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