JPH0311578B2 - - Google Patents
Info
- Publication number
- JPH0311578B2 JPH0311578B2 JP57051175A JP5117582A JPH0311578B2 JP H0311578 B2 JPH0311578 B2 JP H0311578B2 JP 57051175 A JP57051175 A JP 57051175A JP 5117582 A JP5117582 A JP 5117582A JP H0311578 B2 JPH0311578 B2 JP H0311578B2
- Authority
- JP
- Japan
- Prior art keywords
- light source
- receiving circuit
- detection sensor
- photoelectric detection
- optical path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 9
- 230000004397 blinking Effects 0.000 claims description 7
- 230000001960 triggered effect Effects 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
- H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Optical Transform (AREA)
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
この発明は、機械的な変位を検出して電気量に
変換する光電式検出センサの省電力化に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to power saving of a photoelectric detection sensor that detects mechanical displacement and converts it into an electrical quantity.
計測器、工作機械等では、機械的な直線変位、
あるいは回転変位の検出に光電式検出センサが多
用されている。 In measuring instruments, machine tools, etc., mechanical linear displacement,
Alternatively, photoelectric detection sensors are often used to detect rotational displacement.
第1図は従来用いられている光電式検出センサ
の原理図を示すもので、1は光源用の発光ダイオ
ード、2は前記発光ダイオード1に流れる電流を
決める抵抗器、3は受光用のフオトトランジス
タ、4は前記フオトトランジスタ3の電流を決め
る抵抗器、5は前記発光ダイオード1と、フオト
トランジスタ3との間に設けられ、その光路を開
閉するスリツト5aが設けてある格子である。 Figure 1 shows a principle diagram of a conventionally used photoelectric detection sensor, in which 1 is a light emitting diode for a light source, 2 is a resistor that determines the current flowing through the light emitting diode 1, and 3 is a phototransistor for light reception. , 4 is a resistor that determines the current of the phototransistor 3, and 5 is a grid provided between the light emitting diode 1 and the phototransistor 3 and provided with a slit 5a for opening and closing the optical path.
第1図の構成からなる光電式検出センサは、計
測器、又は工作機械(図示せず)等の機械的変位
を格子5に伝えることによつて、発光ダイオード
1から放出される光路を開閉し、フオトトランジ
スタ3の光電流を格子5の機械的変位に対応して
変化させるもので、抵抗器4の両端から機械的変
位を電気量に変換した出力電圧が検出される。 The photoelectric detection sensor having the configuration shown in FIG. 1 opens and closes the optical path emitted from the light emitting diode 1 by transmitting mechanical displacement of a measuring instrument or a machine tool (not shown) to the grating 5. , the photocurrent of the phototransistor 3 is changed in response to the mechanical displacement of the grating 5, and an output voltage obtained by converting the mechanical displacement into an electrical quantity is detected from both ends of the resistor 4.
しかし、このような光電式検出センサでは、機
械的変位を検出するために、光源を常時点灯させ
ておかなければならず、消費電力が大きいという
欠点があつた。特に、電池駆動の計測器にこのよ
うな光電式検出センサを採用すると消費電力が大
きいという欠点は大きな問題となる。 However, such a photoelectric detection sensor has the disadvantage that a light source must be turned on at all times in order to detect mechanical displacement, resulting in high power consumption. In particular, when such a photoelectric detection sensor is employed in a battery-powered measuring instrument, the disadvantage of high power consumption becomes a major problem.
この発明は、かかる欠点を除去し、低消費電力
化した光電式検出センサを提供するためになされ
たものである。 The present invention has been made in order to eliminate such drawbacks and provide a photoelectric detection sensor with reduced power consumption.
以下、この発明の一実施例を第2図の構成図、
及び第3図の波形図に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the configuration diagram shown in FIG.
This will be explained based on the waveform diagram shown in FIG.
第2図において、1〜5は第1図で説明したも
のと同一のものを示す。 In FIG. 2, numerals 1 to 5 indicate the same components as explained in FIG.
6は前記発光ダイオード1を点滅させるための
発振回路、7はトランジスタスイツチ、8は前記
トランジスタスイツチ7のドライブ電流を決める
抵抗器、9は再トリガ可能な単安定マルチバイブ
レータである。ここで発振回路6は、発振周波数
が数KHzの矩形波発振器が望ましく、例えば
TTLゲートで構成される。又、再トリガ可能な
単安定マルチバイブレータ9は、トリガ信号が入
るごとにその時点から一定の期間パルスを発生す
るものである。 6 is an oscillation circuit for blinking the light emitting diode 1; 7 is a transistor switch; 8 is a resistor for determining the drive current of the transistor switch 7; and 9 is a retriggerable monostable multivibrator. Here, the oscillation circuit 6 is preferably a rectangular wave oscillator with an oscillation frequency of several KHz, for example
Consists of TTL gates. Further, the retriggerable monostable multivibrator 9 generates a pulse for a fixed period of time every time a trigger signal is input.
この構成図で、いま格子5の機械的変位により
発光ダイオード1と、フオトトランジスタ3の間
の光路が第3図aのように開閉したとする。ただ
し同図においてHレベルは光路が開き、Lレベル
は閉じた状態を示す。 In this configuration diagram, it is assumed that the optical path between the light emitting diode 1 and the phototransistor 3 is opened and closed as shown in FIG. 3a due to mechanical displacement of the grating 5. However, in the figure, the H level indicates that the optical path is open, and the L level indicates that the optical path is closed.
一方、トランジスタスイツチ7は発振回路6の
出力でオン・オフ動作をしているので、発光ダイ
オード1は第3図bのように周期Tで点滅してい
る。したがつてこの時、フオトトランジスタ3に
は、第3図cに示すような光が到達し、単安定マ
ルチバイブレータ9に電気信号として入力され
る。再トリガ可能な単安定マルチバイブレータ9
は、この電気信号の立ち上がりで動作し、第3図
dに示すように発光ダイオード1の点滅周期Tよ
り長く、かつ、この点滅周期Tの2倍を越えない
パルス幅tに変換する。したがつて、第3図Cに
示すように受光信号が連続すると、再トリガ可能
な単安定マルチバイブレータ9は、結果的に第3
図eに示すように光路が開閉している期間にほぼ
相当する信号を出力する。 On the other hand, since the transistor switch 7 is turned on and off by the output of the oscillation circuit 6, the light emitting diode 1 blinks at a period T as shown in FIG. 3b. Therefore, at this time, light as shown in FIG. 3c reaches the phototransistor 3 and is inputted to the monostable multivibrator 9 as an electric signal. Retriggerable monostable multivibrator 9
operates at the rising edge of this electrical signal and converts it into a pulse width t that is longer than the blinking period T of the light emitting diode 1 and does not exceed twice this blinking period T, as shown in FIG. 3d. Therefore, when the received light signals are continuous as shown in FIG. 3C, the retriggerable monostable multivibrator 9 eventually becomes
As shown in Figure e, a signal approximately corresponding to the period in which the optical path is opened and closed is output.
即ち、発光ダイオード1の点滅を、格子5の機
械的な変位より充分に短い時間で行うことによ
り、出力には格子5の機械的変位を示す第3図a
に相似した信号を得ることができる。 That is, by blinking the light emitting diode 1 in a time sufficiently shorter than the mechanical displacement of the grating 5, the output will be as shown in FIG.
A signal similar to can be obtained.
発光ダイオード1は周期Tで点滅しているので
常時点灯しているときに比べて当然のことながら
平均消費電力は小さくなる。その改善度は点灯時
間と非点灯時間の比によつて定まり、点灯時間を
非点灯時間より短かくする程大である。例えば、
発光ダイオード1の点灯時間を30μS、非点灯時
間を170μSとすると、平均消費電力は1/7とする
ことができる。 Since the light emitting diode 1 blinks at the period T, the average power consumption is naturally smaller than when it is constantly lit. The degree of improvement is determined by the ratio of the lighting time to the non-lighting time, and is greater as the lighting time is made shorter than the non-lighting time. for example,
If the lighting time of the light emitting diode 1 is 30 μS and the non-lighting time is 170 μS, the average power consumption can be reduced to 1/7.
以上説明したように、この発明の光電式検出セ
ンサは、光源と受光回路の間にスリツトを有する
ような格子を設け、光源となる発光ダイオードを
前記格子により光路を開閉する周期より十分に短
い周期で点滅させる駆動回路と、前記受光回路の
出力信号でトリガされ、前記光源の点滅周期より
長く、かつ、その2倍の周期より短い時間幅のパ
ルス信号を出力する再トリガ可能の単安定マルチ
バイブレータを備えているから、検出動作が行な
われているときの光源の消費電力を大幅に低減す
ることができ、特に電池駆動型の測定装置に応用
すると装置を小型化することができると言う効果
がある。 As explained above, in the photoelectric detection sensor of the present invention, a grating having slits is provided between a light source and a light receiving circuit, and a light emitting diode serving as a light source is moved at a period sufficiently shorter than the period at which the optical path is opened and closed by the grating. and a retriggerable monostable multivibrator that is triggered by the output signal of the light receiving circuit and outputs a pulse signal with a time width longer than the blinking cycle of the light source and shorter than twice the cycle. Because of this feature, the power consumption of the light source during detection operations can be significantly reduced, which has the effect of making the device more compact, especially when applied to battery-powered measuring devices. be.
第1図は従来の光電式検出センサの原理図、第
2図はこの発明の一実施例を示す構成図、第3図
は第2図に示す実施例の動作説明図、である。
図中、1は発光ダイオード、3はフオトトラン
ジスタ、5は格子、6は発振回路、9は単安定マ
ルチバイブレータ、11は積分用コンデンサを示
す。
FIG. 1 is a principle diagram of a conventional photoelectric detection sensor, FIG. 2 is a configuration diagram showing an embodiment of the present invention, and FIG. 3 is an explanatory diagram of the operation of the embodiment shown in FIG. In the figure, 1 is a light emitting diode, 3 is a phototransistor, 5 is a grid, 6 is an oscillation circuit, 9 is a monostable multivibrator, and 11 is an integrating capacitor.
Claims (1)
開閉する格子を設けた光電式検出センサにおい
て、 前記格子により前記光源と前記受光回路の間の
光路を開閉する周期より十分短い周期で前記光源
を点滅させる駆動回路と、前記受光回路の出力信
号でトリガされ、1回のトリガで前記光源の点滅
周期より長く、かつ、前記点滅周期の2倍を越え
ない範囲の時間幅のパルスを出力する再トリガ可
能な単安定マルチバイブレータを備えていること
を特徴とする光電式検出センサ。[Scope of Claims] 1. A photoelectric detection sensor provided with a grating that opens and closes an optical path between a light source and a light receiving circuit of the light source, comprising: a period in which the grating opens and closes an optical path between the light source and the light receiving circuit; A drive circuit that blinks the light source at a sufficiently shorter cycle, and a light receiving circuit that is triggered by an output signal of the light receiving circuit, and which is longer than the blinking cycle of the light source and does not exceed twice the blinking cycle with one trigger. A photoelectric detection sensor comprising a retriggerable monostable multivibrator that outputs a pulse with a time width.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5117582A JPS58170220A (en) | 1982-03-31 | 1982-03-31 | Photoelectric detection sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5117582A JPS58170220A (en) | 1982-03-31 | 1982-03-31 | Photoelectric detection sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58170220A JPS58170220A (en) | 1983-10-06 |
JPH0311578B2 true JPH0311578B2 (en) | 1991-02-18 |
Family
ID=12879494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5117582A Granted JPS58170220A (en) | 1982-03-31 | 1982-03-31 | Photoelectric detection sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58170220A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06105174B2 (en) * | 1984-04-14 | 1994-12-21 | ファナック株式会社 | Encoder |
JPH071177B2 (en) * | 1987-06-08 | 1995-01-11 | ファナック株式会社 | Encoder |
JP3494518B2 (en) | 1996-02-20 | 2004-02-09 | 株式会社小松製作所 | Image recognition device using the light section method |
JP4525253B2 (en) * | 2004-08-30 | 2010-08-18 | オムロン株式会社 | Optical sensor and distance measuring method |
GB0708499D0 (en) * | 2007-05-02 | 2007-06-06 | Renishaw Plc | Tool setting or analysis device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5322000A (en) * | 1976-08-12 | 1978-02-28 | Nippon Signal Co Ltd:The | Ticket storage of automatic ticket examining system and apparatus therefor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586107Y2 (en) * | 1978-05-02 | 1983-02-02 | 松下電工株式会社 | One-way detection photoelectric switch |
-
1982
- 1982-03-31 JP JP5117582A patent/JPS58170220A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5322000A (en) * | 1976-08-12 | 1978-02-28 | Nippon Signal Co Ltd:The | Ticket storage of automatic ticket examining system and apparatus therefor |
Also Published As
Publication number | Publication date |
---|---|
JPS58170220A (en) | 1983-10-06 |
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