JPH03115139A - Antireflection film and its formation - Google Patents
Antireflection film and its formationInfo
- Publication number
- JPH03115139A JPH03115139A JP1251839A JP25183989A JPH03115139A JP H03115139 A JPH03115139 A JP H03115139A JP 1251839 A JP1251839 A JP 1251839A JP 25183989 A JP25183989 A JP 25183989A JP H03115139 A JPH03115139 A JP H03115139A
- Authority
- JP
- Japan
- Prior art keywords
- film
- antireflection film
- substrate
- reflection
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 71
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 32
- 239000011521 glass Substances 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 239000003599 detergent Substances 0.000 abstract description 2
- 230000007935 neutral effect Effects 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- SYFOAKAXGNMQAX-UHFFFAOYSA-N bis(prop-2-enyl) carbonate;2-(2-hydroxyethoxy)ethanol Chemical compound OCCOCCO.C=CCOC(=O)OCC=C SYFOAKAXGNMQAX-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- -1 i O Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は基材表面に形成する反射防止膜に係り、特に、
基材の種類によらずに、その表面に簡便に形成すること
のできる反射防止膜およびその形成方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an antireflection film formed on the surface of a substrate, and in particular,
The present invention relates to an antireflection film that can be easily formed on the surface of a substrate regardless of the type of the substrate, and a method for forming the same.
［従来の技術］
ガラス表面は、通常、片面で３〜４％の反射率を有して
いるため、これを表面に持つブラウン管などの表示装置
、あるいは、カメラ、眼鏡などの光学機器においては、
その表面反射を低減するために反射防止処理を施してお
り、この処理は、最近では、表面反射によるエネルギー
ロスの低減の観点から、太陽電池や核融合用レーザー装
置などへの適用も検討されている。[Prior Art] Glass surfaces usually have a reflectance of 3 to 4% on one side, so in display devices such as cathode ray tubes, or optical devices such as cameras and glasses that have this on their surfaces,
Anti-reflection treatment is applied to reduce surface reflection, and this treatment has recently been considered for application to solar cells, nuclear fusion laser equipment, etc. from the perspective of reducing energy loss due to surface reflection. There is.
反射防止処理の方法としては、薄膜界面での反射光の干
渉作用を利用する多層膜（単層膜を含む）法や、屈折率
を連続的に変化させて反射をなくす屈折率連続変化法な
どが知られている。これらの方法にはそれぞれに長所短
所があるが、特に大面積にわたって反射防止膜を形成す
る場合には、屈折率連続変化法が有利である。Anti-reflection treatment methods include the multilayer film (including single-layer film) method, which utilizes the interference effect of reflected light at the thin film interface, and the continuous refractive index change method, which eliminates reflection by continuously changing the refractive index. It has been known. Each of these methods has advantages and disadvantages, but the continuous refractive index method is particularly advantageous when forming an antireflection film over a large area.
このように屈折率が膜厚方向に連続変化している膜を不
均質膜（層）と言い、その代表的なものとしてガラス表
面を多孔質化したものがあり、その形成方法として、例
えば特開昭５７−１６６３３７号あるいは特開昭５７−
１７０８４０号記載のように、ガラス表面をケイフッ化
水素酸のシリカ過飽和水溶液でエツチングする方法が提
案されている。この方法では、基材のガラス自体をエツ
チングするため、簡便かつ均一に多孔質化することがで
きる。A film in which the refractive index continuously changes in the film thickness direction is called a heterogeneous film (layer).A typical example of such a film is one in which the glass surface is made porous. 166337-166337 or JP-A-57-
As described in No. 170,840, a method has been proposed in which a glass surface is etched with a silica supersaturated aqueous solution of hydrofluorosilicic acid. In this method, since the base glass itself is etched, it can be easily and uniformly made porous.
［発明が解決しようとする課題］
しかしながら、上記従来技術は、多孔質化については考
慮しているが、その強度については必ずしも十分な配慮
がなされていないという問題があった。また、対象とす
る基材がガラスに限定されているため、プラスチックな
どの表面に反射防止膜を形成する場合には適用できなか
った。さらに、基材そのものをエツチングするため、エ
ツチング量の制御という問題があった。[Problems to be Solved by the Invention] However, although the above-mentioned prior art takes into consideration porosity, there is a problem in that sufficient consideration is not necessarily given to the strength. Furthermore, since the target substrate is limited to glass, it cannot be applied to forming an antireflection film on the surface of plastic or the like. Furthermore, since the base material itself is etched, there is a problem of controlling the amount of etching.
本発明の目的は、上記従来技術の有していた課題を解決
して、基材の種類によることなく、基材表面に簡便に形
成することのできる反射防止膜およびその形成方法を提
供することにある。An object of the present invention is to provide an antireflection film that can be easily formed on the surface of a substrate regardless of the type of substrate, and a method for forming the same, by solving the problems of the above-mentioned conventional techniques. It is in.
［課題を解決するための手段］
上記目的は電子サイクロトロン共鳴を利用したマイクロ
波プラズマＣＶＤ法により複数種の物質からなる薄膜を
基材上に形成し、次いで、該薄膜を選択的にエツチング
して多孔質化することによって達成することができる。[Means for Solving the Problems] The above object is to form a thin film made of a plurality of substances on a base material by a microwave plasma CVD method using electron cyclotron resonance, and then selectively etch the thin film. This can be achieved by making it porous.
上記電子サイクロトロン共鳴を利用したマイクロ波プラ
ズマＣＶＤ法によれば、低温あるいは無加熱でも、強固
な薄膜を形成することができる。According to the microwave plasma CVD method using electron cyclotron resonance, a strong thin film can be formed at low temperatures or without heating.
ただし、この反射防止膜については、その平均屈折率が
基材の屈折率よりも低いこと、可視光に対して透明であ
ることなどの制約があり、この条件にあわせて物質を選
択する必要がある。ここで、平均屈折率とは、薄膜（屈
折率ｎｆ、膜厚Ｄ）中に多孔質性の部分が厚さｄだけ形
成されている場合、（１）式で表されるｎ ｍｅａｎで
ある。（空気の屈折率を１とする）
Ｄ
［作用コ
光の反射は屈折率の異なる界面で生ずるものであり、屈
折率を連続的に変化させることによって光学的界面がな
くなり、反射が生じなくなる。屈折率を連続的に変化さ
せる手段として、薄膜の表面を多孔質化する方法があり
、このようにすることによって、この部分での屈折率は
ｌ （空気）からｎｆ（薄膜物質）まで連続的に変化す
る。この場合に、薄膜と基材との界面で反射が生ずるが
、前述のように、薄膜の平均屈折率を基材の屈折率より
も小さいものとした場合には、反射が低減される。これ
は、該界面での反射がｎｆと基材の屈折率ｎｓとの差の
関数であることによる。すなわち、ｎｆがｎｓに近いほ
ど小さく、特に、薄膜を基材と同一物質で形成すれば、
最小となる。However, there are restrictions on this anti-reflection film, such as its average refractive index being lower than the refractive index of the base material and that it be transparent to visible light, so it is necessary to select the material according to these conditions. be. Here, the average refractive index is n mean expressed by equation (1) when a porous portion with a thickness d is formed in a thin film (refractive index nf, film thickness D). (Assuming the refractive index of air is 1) D [Operation] Reflection of light occurs at interfaces with different refractive indexes; by continuously changing the refractive index, there are no optical interfaces and no reflection occurs. One way to continuously change the refractive index is to make the surface of the thin film porous.By doing this, the refractive index in this area is continuous from l (air) to nf (thin film material). Changes to In this case, reflection occurs at the interface between the thin film and the base material, but as described above, when the average refractive index of the thin film is made smaller than the refractive index of the base material, the reflection is reduced. This is because the reflection at the interface is a function of the difference between nf and the refractive index ns of the substrate. That is, the closer nf is to ns, the smaller it is, especially if the thin film is formed of the same material as the base material.
Minimum.
ところで、実用的には、基材としてガラス（融点〜１８
０℃、ｎｓ−＝１．５）やプラスチック樹脂（ガラス転
移点く１００℃、ｎｓ〜１．５）などが用いられる場合
が多く、所望の屈折率に適合する物質は限られる。さら
に、実用的な基材は、上記のように、融点やガラス転移
点が概ね低いため、薄膜形成温度に制限がある。すなわ
ち、従来の真空蒸着法、熱ＣＶＤ法、プラズマＣＶＤ法
などの適用不可な温度領域である。そこで、本発明では
、低温あるいは無加熱で薄膜を形成できる方法として、
マイクロ波プラズマＣＶＤ法を採用した。この方法は電
子サイクロトロン共鳴によりガスの分解効率を向上させ
て高密度プラズマを作り、それを用いて膜形成を行うの
で、低温あるいは無加熱で強固な薄膜を形成することが
可能である。By the way, in practical use, glass (melting point ~18
0°C, ns-=1.5) or plastic resin (glass transition point: 100°C, ns-1.5) are often used, and materials that match the desired refractive index are limited. Furthermore, as mentioned above, practical base materials generally have low melting points and glass transition points, so there is a limit to the thin film forming temperature. That is, this is a temperature range to which conventional vacuum evaporation methods, thermal CVD methods, plasma CVD methods, etc. cannot be applied. Therefore, in the present invention, as a method for forming a thin film at low temperature or without heating,
A microwave plasma CVD method was adopted. This method uses electron cyclotron resonance to improve gas decomposition efficiency and create high-density plasma, which is used to form films, so it is possible to form strong thin films at low temperatures or without heating.
上記方法によって成膜した薄膜の多孔質化加工は、線膜
を構成する物質によってエツチング速度を異にするエツ
チング液を用いて膜表面をエッチンッグすることによっ
ておこなう。すなわち、エツチング速度の大きい物質が
まず選択的にエツチング除去され、エツチング速度の小
さい物質が残るため、結果として多孔質の反射防止膜が
形成されることになる。また、エツチング速度は孔の深
さが深くなるほど遅くなるため、孔形状が円錐状となり
、屈折率が滑らかに変化することになる。The thin film formed by the above method is made porous by etching the film surface using an etching solution whose etching rate varies depending on the material forming the wire film. That is, the substance with a high etching rate is selectively etched away first, and the substance with a low etching rate remains, resulting in the formation of a porous antireflection film. Furthermore, the etching rate becomes slower as the depth of the hole increases, so the hole becomes conical in shape and the refractive index changes smoothly.
［実施例］
以下、本発明の反射防止膜およびその形成方法について
、実施例によって具体的に説明する。[Example] Hereinafter, the antireflection film of the present invention and the method for forming the same will be specifically explained using Examples.
実施例 ｌ
第１図は、基材２としてガラス板（ｎｓ＝１゜５３）を
用いた場合の反射防止膜ｌの形成の手順を示した図であ
る。すなわち、
（ａ）まず、基材２の表面を中性洗剤およびアセトン超
音波により洗浄した。Example 1 FIG. 1 is a diagram showing the procedure for forming an antireflection film 1 when a glass plate (ns=1°53) is used as the base material 2. That is, (a) First, the surface of the base material 2 was cleaned using a neutral detergent and acetone ultrasonic waves.
（ｂ）次いで、基材２の表面に、マイクロ波プラズマＣ
ｖＤ法によりＳｎＯ，３とＳｉ０，４の混合物を約１μ
ｍの厚さで成膜した。成膜条件は下記のとうりである。(b) Next, microwave plasma C is applied to the surface of the base material 2.
A mixture of SnO, 3 and Si0, 4 was prepared using the vD method to approximately 1 μm.
The film was formed to a thickness of m. The film forming conditions are as follows.
Ｓｉ Ｈ，流量 １ｄ／ｗｉｎ
ＳｎＣ１，流量 １ｃｎＴ／ＩＷｉｎｏ３流量
１０ｃｎ？／ｌｌｌ１ｎ成膜温度 無加熱
マイクロ波パワ １００Ｗ
成膜圧力 ０．１３３Ｐａ
（ｃ）上記試料を硝酸：塩酸＝１：３混合液（王水）を
用いて約５分間エツチングした。この場合、エツチング
速度の大きいＳｎ０．３についてはエツチングが進行す
るが、エツチング速度の小さいＳｉ０，４はほとんどエ
ツチングされない。Si H, flow rate 1d/win SnC1, flow rate 1cnT/IWino3 flow rate
10cn? /lll1n Film forming temperature Non-heating microwave power 100 W Film forming pressure 0.133 Pa (c) The above sample was etched for about 5 minutes using a 1:3 mixture of nitric acid and hydrochloric acid (aqua regia). In this case, etching progresses for Sn0.3, which has a high etching rate, but Si0,4, which has a low etching rate, is hardly etched.
その結果、反射防止膜ｌの表面に約０．９μｍの多孔質
層５が形成された。As a result, a porous layer 5 of about 0.9 μm was formed on the surface of the antireflection film 1.
この場合、ＳｎＯ，３は屈折率が〜２．０と高いが、エ
ツチングによってほとんど除去されており、また混入の
割合も少ないので、生成した反射防止膜１の組成はほぼ
Ｓｉ０，４のみであると考えられる（ｎｆ〜１．４５）
。In this case, although SnO,3 has a high refractive index of ~2.0, most of it has been removed by etching, and the proportion of its inclusion is small, so the composition of the produced antireflection film 1 is almost exclusively Si0,4. It is considered that (nf ~ 1.45)
.
第２図に波長４００〜７００ｎｍでの反射率測定結果を
示す。ここで、曲線６は反射防止膜ｌを形成する前の基
材２の反射率を、曲線７は片面に上記反射防止膜１を形
成した後の反射率を、曲線８は上記反射防止膜を両面に
形成した場合の反射率を、それぞれ、示したものである
。なお、上記例では反射防止膜ｌの成膜を無加熱で行っ
た場合について説明したが、基材の融点以下であれば、
加熱して行っても差し支えない。FIG. 2 shows the results of reflectance measurements at wavelengths of 400 to 700 nm. Here, curve 6 is the reflectance of the base material 2 before forming the anti-reflection film 1, curve 7 is the reflectance after forming the above-mentioned anti-reflection film 1 on one side, and curve 8 is the reflectance after forming the above-mentioned anti-reflection film 1 on one side. The reflectance when formed on both sides is shown. In the above example, the case where the antireflection film l was formed without heating was explained, but if it is below the melting point of the base material,
There is no problem even if it is heated.
実施例 ２
本実施例では、基材２としてプラスチック樹脂を用いた
場合について説明する。用いた樹脂はジエチレングリコ
ールビスアリルカーボネートで、樹脂状態で屈折率は約
１．５、平均透過率（４００〜７００ｎＩｌ）は約９２
％、平均反射率（４００〜７００ｎｍ）は約４％（片面
）のものである。Example 2 In this example, a case will be described in which a plastic resin is used as the base material 2. The resin used was diethylene glycol bisallyl carbonate, which had a refractive index of about 1.5 and an average transmittance (400 to 700 nIl) of about 92 in the resin state.
%, and the average reflectance (400-700 nm) is about 4% (one side).
上記樹脂板に、実施例１の場合と同様の手順で、反射防
止膜を形成し、エツチングを行った。ただし、樹脂がエ
ツチング液で腐食する恐れがあるので、エツチング液と
しては約５％王水水溶液を用い、約１５分間のエツチン
グを行った。An antireflection film was formed on the resin plate and etched in the same manner as in Example 1. However, since there is a risk that the resin may be corroded by the etching solution, an approximately 5% aqua regia aqueous solution was used as the etching solution, and etching was performed for approximately 15 minutes.
その結果、外観に異常なく、反射防止膜を形成すること
ができた。また、この樹脂は屈折率が実施例１のガラス
の場合とほぼ等しいので、反射率もほぼ同程度であった
。なお、本実施例の場合は、基材２のガラス転移温度が
１００℃程度であるので、反射防止膜の形成はガラス転
移温度以下の温度あるいは無加熱で行う必要がある。As a result, the antireflection film could be formed without any abnormality in appearance. Furthermore, since the refractive index of this resin was approximately the same as that of the glass of Example 1, the reflectance was also approximately the same. In the case of this example, since the glass transition temperature of the base material 2 is about 100° C., the antireflection film must be formed at a temperature below the glass transition temperature or without heating.
実施例 ３
本実施例は基材としてシリコンウェハ（鏡面研磨品、ｎ
５＝３，８７５、平均反射率的５０％）を用いた場合の
例である。具体的には太陽電池やフォトセンサなどに応
用する場合の例で、この場合は、表面での眩しさを低減
するということではなく、光の反射を抑えることによっ
て効率良く光電変換を行うことを主目的とするものであ
る。Example 3 This example uses a silicon wafer (mirror polished product, n
5=3,875, average reflectance 50%) is used. Specifically, this is an example of application to solar cells, photosensors, etc. In this case, the objective is not to reduce glare on the surface, but to efficiently perform photoelectric conversion by suppressing light reflection. This is the main purpose.
反射防止膜の材料としては、Ｓ ｉ Ｏ，とＳｔ。Materials for the anti-reflection film include SiO, and St.
Ｎ、の混合物を用いた。成膜条件を下表に示す。A mixture of N was used. The film forming conditions are shown in the table below.
なお、膜厚は約５００ｎｍとした。Note that the film thickness was approximately 500 nm.
ＳｉＨ，流量 ２ｃｒｌ／ｍ１ｎ Ｎ、流量 ３ｃｎ？／ｍ１ｎ Ｏ８流量 ３ｃＩ（／ｍｉｎ 成膜温度 無加熱 マイクロ波パワ １００ Ｗ 成膜圧力 ０．１３３Ｐａ エツチング液としては５％ＨＦ水溶液を用いた。SiH, flow rate 2crl/m1n N, flow rate 3cn? /m1n O8 flow rate 3 cI (/min Film formation temperature: No heating Microwave power 100W Film forming pressure 0.133Pa A 5% HF aqueous solution was used as the etching solution.
該エツチング液にはＳｉｎ、は溶けるがＳｉ、Ｎ。Sin dissolves in the etching solution, but Si and N dissolve.
はあまり溶けないので、最終的にＳｉ、Ｎ４からなる多
孔質層が形成され、反射防止効果を示した。Since it does not dissolve much, a porous layer consisting of Si and N4 was finally formed and exhibited an antireflection effect.
なお、Ｓｔ、Ｎ４の屈折率は約２．０であるが、この場
合基材がシリコンであるため使用が可能である。Note that although the refractive index of St and N4 is approximately 2.0, they can be used in this case because the base material is silicon.
実施例 ４
本実施例は、代表的な表示素子であるブラウン管９の表
面に反射防止膜ｌを形成した場合の例をしめしたもので
ある。Example 4 This example shows an example in which an antireflection film l is formed on the surface of a cathode ray tube 9, which is a typical display element.
第３図にブラウン管の断面を示す。ブラウン管９の表面
はガラスであるので、反射防止膜ｌの構成および形成工
程はは実施例１の場合と全く同様である。なお、反射防
止効果形成はブラウン管製造の最終工程でおこなわれる
。Figure 3 shows a cross section of a cathode ray tube. Since the surface of the cathode ray tube 9 is glass, the structure and formation process of the antireflection film 1 are exactly the same as in the first embodiment. Incidentally, the formation of the antireflection effect is performed in the final step of manufacturing the cathode ray tube.
実施例 ５
本実施例は、エレクトロルミネッセンスを利用した平面
表示装置に応用した場合の例である。Example 5 This example is an example of application to a flat display device using electroluminescence.
この場合も、表面はガラスであるので、実施例１の場合
と同様の方法、工程で反射防止膜の形成が可能である。In this case as well, since the surface is glass, the antireflection film can be formed using the same method and steps as in Example 1.
また、基材の材質により、反射防止膜を構成する物質と
エツチング液とを選択することによって液晶表示装置や
プラズマデイスプレィなどの平面表示装置にも応用でき
る。Further, by selecting the substance constituting the antireflection film and the etching liquid depending on the material of the base material, the present invention can be applied to flat display devices such as liquid crystal displays and plasma displays.
第４図に液晶表示装置１０に適用した場合の外観斜視図
を示す。FIG. 4 shows a perspective view of the external appearance when applied to the liquid crystal display device 10.
実施例 ６
本実施例は、光学機器の一種であるカメラのレンズおよ
び眼鏡のレンズに反射防止膜を応用した場合の例である
。第５図はカメラの外観で、１１はカメラ本体、１２は
レンズを示す。カメラレンズはガラス製であるので、実
施例１の場合と同様の方法、工程での反射防止膜の形成
が可能である。Example 6 This example is an example in which an antireflection film is applied to a camera lens and an eyeglass lens, which are a type of optical equipment. FIG. 5 shows the appearance of the camera, with reference numeral 11 indicating the camera body and 12 indicating the lens. Since the camera lens is made of glass, the antireflection film can be formed using the same method and steps as in Example 1.
また、眼鏡レンズの場合、プラスツチツクレンズを使用
する場合には、実施例２の場合のように、エッチラング
液や成膜温度などに注意する必要がある。第６図に眼鏡
１３に適用した場合の外観を示す。Further, in the case of spectacle lenses, when using a plastic lens, it is necessary to pay attention to the etching solution, film forming temperature, etc., as in the case of Example 2. FIG. 6 shows the appearance when applied to eyeglasses 13.
以上の諸例で挙げたように、反射防止膜として使用する
物質は、基材より小さい屈折率を持っていること、４０
０〜７００ｎｍ程度の可視光領域で吸収を持たないこと
（透明なこと）の２点を満足していればよい。しかし、
実際には、基材の耐薬品性や基材との付着力などを考慮
して選択する必要がある。その代表的なものとして、Ｓ
ｉ Ｏ，、ＳｎＯ，、ＴｉＯ，などの金属酸化物や、
Ｓｉ、Ｎ。As mentioned in the above examples, the material used as the anti-reflection film must have a refractive index smaller than that of the base material,
It is sufficient that the material satisfies the following two requirements: not having absorption in the visible light region of approximately 0 to 700 nm (transparent). but,
In reality, it is necessary to select the material in consideration of the chemical resistance of the base material, the adhesive force with the base material, etc. As a representative example, S.
Metal oxides such as i O, SnO, TiO,
Si, N.
などの金属窒化物などを挙げることができる。Examples include metal nitrides such as.
［発明の効果］
以上述べてきたように、反射防止膜及びその形成方法を
本発明の反射防止膜およびその形成方法とすることによ
って、従来技術の有していた課題を解決して、基材の種
類によることなく、基材表面に簡便に形成することので
きる反射防止膜およびその形成方法を提供することがで
きた。[Effects of the Invention] As described above, by using the anti-reflection film and the method for forming the same as the anti-reflection film and the method for forming the same of the present invention, the problems of the prior art can be solved and the substrate material It was possible to provide an antireflection film that can be easily formed on the surface of a substrate regardless of the type of the antireflection film, and a method for forming the same.
第１図は本発明の反射防止膜の形成方法の手順を示す図
、第２図は本発明の反射防止膜の反射防止効果を示す特
性図、第３図は本発明の反射防止膜をブラウン管上に形
成した状態を示す断面図、第４図は本発明の反射防止膜
を液晶表示装置に適用した場合を示す一部破断面外観図
、第５図は本発明の反射防止膜をカメラレンズに適用し
た場合を示す一部破断面外観図、第６図は本発明の反射
防止膜を眼鏡レンズに適用した場合を示す外観図である
。
ｌ・・・反射防止膜、 ２・・・基材、３・・・Ｓｎ
Ｏい ４・・・ＳｉＯい５・・・多孔質層、
６・・・ガラス表面そのまま、
７・・・ガラスの片面に本発明の反射防止膜を設けた場
合、
８・・・ガラスの両面に本発明の反射防止膜を設けた場
合
９・・・ブラウン管、 １０・・・液晶表示装置
、１１・・・カメラ本体、 １２・・・レンズ、
１３・・・眼鏡
２
第１
図
００
００
００
００
ミ皮 表
ｎｍｌ
第２
図Fig. 1 is a diagram showing the steps of the method for forming the antireflection film of the present invention, Fig. 2 is a characteristic diagram showing the antireflection effect of the antireflection film of the invention, and Fig. 3 is a diagram showing the antireflection film of the invention on a cathode ray tube. 4 is a partially broken external view showing the case where the anti-reflection film of the present invention is applied to a liquid crystal display device, and FIG. 5 is a cross-sectional view showing the state in which the anti-reflection film of the present invention is applied to a camera lens. FIG. 6 is a partially broken external view showing the case where the antireflection film of the present invention is applied to a spectacle lens. l...Antireflection film, 2...Base material, 3...Sn
O 4...SiO 5...Porous layer, 6...Glass surface as is, 7...When the anti-reflection film of the present invention is provided on one side of the glass, 8...Both sides of the glass When the antireflection film of the present invention is provided on 9... Braun tube, 10... Liquid crystal display device, 11... Camera body, 12... Lens,
13...Glasses 2 Fig. 1 00 00 00 00 Skin surface nml Fig. 2
Claims (1)
低減させる目的で該基材上に形成する反射防止膜で、２
種以上の物質からなる膜をエッチングすることによって
多孔質化した膜であることを特徴とする反射防止膜。 ２、上記２種以上の物質の１つがシリコン化合物である
ことを特徴とする特許請求の範囲第１項記載の反射防止
膜。 ３、電子サイクロトロン共鳴を利用したマイクロ波プラ
ズマＣＶＤ法で複数種の物質からなる薄膜を形成する工
程と、該薄膜をエッチングにより多孔質化する工程とか
らなることを特徴とする反射防止膜の形成方法。 ４、特許請求の範囲第１項記載の反射防止膜を表面に形
成したことを特徴とする表示装置。 ５、特許請求の範囲第１項記載の反射防止膜を表面に形
成したことを特徴とする光学機器。[Scope of Claims] 1. An antireflection film formed on a substrate for the purpose of reducing optical reflection on the surface of the substrate by utilizing optical interference, 2.
An antireflection film characterized by being a film made porous by etching a film made of more than one substance. 2. The antireflection film according to claim 1, wherein one of the two or more types of substances is a silicon compound. 3. Formation of an anti-reflection film characterized by the steps of forming a thin film made of a plurality of substances by a microwave plasma CVD method using electron cyclotron resonance, and making the thin film porous by etching. Method. 4. A display device comprising an antireflection film according to claim 1 formed on its surface. 5. An optical device comprising an antireflection film according to claim 1 formed on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1251839A JPH03115139A (en) | 1989-09-29 | 1989-09-29 | Antireflection film and its formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1251839A JPH03115139A (en) | 1989-09-29 | 1989-09-29 | Antireflection film and its formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03115139A true JPH03115139A (en) | 1991-05-16 |
Family
ID=17228694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1251839A Pending JPH03115139A (en) | 1989-09-29 | 1989-09-29 | Antireflection film and its formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03115139A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026163A1 (en) * | 1995-02-22 | 1996-08-29 | Elf Atochem Vlissingen B.V. | Process for producing a protecting coating on a surface of a glass or ceramic article |
| WO2001071394A1 (en) * | 2000-03-21 | 2001-09-27 | Asahi Glass Company, Limited | Antireflection product and production method therefor |
| JP2006302484A (en) * | 2004-07-22 | 2006-11-02 | Hitachi Maxell Ltd | Antireflection coating, optical pickup component, objective lens and method for manufacturing optical pickup component |
| JP2008096828A (en) * | 2006-10-13 | 2008-04-24 | Seiko Epson Corp | Manufacturing method of optical article and its optical article |
| US7755998B2 (en) | 2004-07-22 | 2010-07-13 | Hitachi Maxell, Ltd. | Optical pickup system, optical head, optical disk apparatus, and objective lens |
| WO2012029261A2 (en) | 2010-08-31 | 2012-03-08 | Canon Kabushiki Kaisha | Porous glass and optical member |
| WO2013073106A1 (en) * | 2011-11-18 | 2013-05-23 | Canon Kabushiki Kaisha | Method for manufacturing optical member and method for manufacturing image pickup apparatus |
| US9212088B2 (en) | 2011-12-15 | 2015-12-15 | Canon Kabushiki Kaisha | Method for manufacturing optical member |
| US9487436B2 (en) | 2011-11-18 | 2016-11-08 | Canon Kabushiki Kaisha | Optical member, image pickup apparatus, and method for manufacturing optical member |
-
1989
- 1989-09-29 JP JP1251839A patent/JPH03115139A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996026163A1 (en) * | 1995-02-22 | 1996-08-29 | Elf Atochem Vlissingen B.V. | Process for producing a protecting coating on a surface of a glass or ceramic article |
| WO2001071394A1 (en) * | 2000-03-21 | 2001-09-27 | Asahi Glass Company, Limited | Antireflection product and production method therefor |
| JP2006302484A (en) * | 2004-07-22 | 2006-11-02 | Hitachi Maxell Ltd | Antireflection coating, optical pickup component, objective lens and method for manufacturing optical pickup component |
| US7755998B2 (en) | 2004-07-22 | 2010-07-13 | Hitachi Maxell, Ltd. | Optical pickup system, optical head, optical disk apparatus, and objective lens |
| KR101258921B1 (en) * | 2004-07-22 | 2013-04-29 | 히다치 막셀 가부시키가이샤 | Optical parts for optical pick-up, objective lens, anti-reflective coating and manufacturing method of optical parts for optical pick-up |
| JP2008096828A (en) * | 2006-10-13 | 2008-04-24 | Seiko Epson Corp | Manufacturing method of optical article and its optical article |
| WO2012029261A2 (en) | 2010-08-31 | 2012-03-08 | Canon Kabushiki Kaisha | Porous glass and optical member |
| US8993107B2 (en) | 2010-08-31 | 2015-03-31 | Canon Kabushiki Kaisha | Porous glass and optical member |
| WO2013073106A1 (en) * | 2011-11-18 | 2013-05-23 | Canon Kabushiki Kaisha | Method for manufacturing optical member and method for manufacturing image pickup apparatus |
| US9487436B2 (en) | 2011-11-18 | 2016-11-08 | Canon Kabushiki Kaisha | Optical member, image pickup apparatus, and method for manufacturing optical member |
| US9517969B2 (en) | 2011-11-18 | 2016-12-13 | Canon Kabushiki Kaisha | Method for manufacturing a porous glass film |
| US9212088B2 (en) | 2011-12-15 | 2015-12-15 | Canon Kabushiki Kaisha | Method for manufacturing optical member |
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