JPH03114610A - Die for wire drawing - Google Patents
Die for wire drawingInfo
- Publication number
- JPH03114610A JPH03114610A JP25140389A JP25140389A JPH03114610A JP H03114610 A JPH03114610 A JP H03114610A JP 25140389 A JP25140389 A JP 25140389A JP 25140389 A JP25140389 A JP 25140389A JP H03114610 A JPH03114610 A JP H03114610A
- Authority
- JP
- Japan
- Prior art keywords
- die
- base material
- sintered
- cvd
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005491 wire drawing Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 46
- 239000010432 diamond Substances 0.000 claims abstract description 22
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 abstract 1
- 229910033181 TiB2 Inorganic materials 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- -1 80% Chemical class 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Metal Extraction Processes (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、八〇、、Ａｕ、 Ａｇ、 Ｃｕなど比較的軟
質の金属を線引きするのに用いられる長寿命の線引き用
ダイスに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a long-life wire drawing die used for drawing relatively soft metals such as 80%, Au, Ag, and Cu.
一般に線引き用ダイスとしては、ＷＣ等の超硬合金（以
下ＷＣと記す）、焼結ダイヤモンド、焼結ＣＢＮ、単結
晶ダイヤモンド等が用いられている。 これらのうぢ
、ＷＣは安価゛Ｃ１人口径のタイス或いは精度をあまり
問題としない小口径のダイスに広く使用され、単結晶ダ
イヤモンドは高価なため、精度か要求される小口径のダ
イスに使用される等、それぞれの目的によって使い分け
られている。Generally, as wire drawing dies, cemented carbide (hereinafter referred to as WC) such as WC, sintered diamond, sintered CBN, single crystal diamond, etc. are used. These diamonds are widely used for inexpensive C1 diameter dies or small diameter dies where accuracy is not a big issue, whereas single crystal diamonds are expensive, so they are not used for small diameter dies that require precision. They are used differently depending on their purpose.
また、ＷＣダイスの内面にＴｉＮをコーティングして、
線引き用ダイス（以下ダイスという）の摩耗を抑制り、
７寿命を延長した試みもなされている（特開昭６］−
７４７２５号公報）。In addition, the inner surface of the WC die is coated with TiN,
Suppresses wear on wire drawing dies (hereinafter referred to as dies),
7 Attempts have been made to extend the lifespan (Japanese Unexamined Patent Application Publication No. 1986)-
74725).
しかしなから、線引きする金属が軟質であっても、毎分
数千ｍの高速で長時間線引きすると、摩耗することは避
は得ず、ダイス内面か摩耗すると、引き出された線の断
面形状が変化し、また表面に凹凸が形成される。そのた
め摩耗度か許容範囲を越えると、内面を再研摩し、再使
用されるが、この場合には一段太い線を線引きすダイス
として使用せざるを得ない。However, even if the metal to be drawn is soft, if the wire is drawn at high speeds of several thousand meters per minute for long periods of time, it will inevitably wear out, and if the inner surface of the die wears out, the cross-sectional shape of the drawn wire will change. The surface changes, and unevenness is formed on the surface. Therefore, when the degree of wear exceeds the allowable range, the inner surface is re-polished and reused, but in this case, it has no choice but to be used as a die for drawing a thicker line.
そのため、再研摩するまでのダイス寿命が長いことか望
まれ、線引きする場合、直接線に触れる部分の材質の硬
度が高い程、ダイス寿命の延長に効果かある。Therefore, it is desired that the life of the die be long before re-polishing, and when drawing wire, the harder the material of the part that comes into direct contact with the wire, the more effective it is in extending the life of the die.
本発明者等は、」二記タイスの内側孔内面に働く力（線
引きする際の線を引き出す力）は数ｋｇ／ｍｍ’と比較
的小さ（、かつダイスには連続的な力が働くので、ダイ
スにかかる負荷は、切削）＼イト程大きくない。したが
って、基材とコーテイング材とは、切削バイトの基材と
刃材等て問題視される程密着力が要求されないこと、お
よびダイヤモンド（主物質中最も硬度か高く、またＣＶ
Ｄ法ダイヤモンドの合成技術が進歩確立してきているこ
とに着目し、ＣＶＤタイヤモントか利用出来ると考えた
。The inventors of the present invention have found that the force acting on the inner surface of the inner hole of the die (the force for drawing the line when drawing the line) is relatively small at several kg/mm' (and since a continuous force acts on the die), , the load on the die is not as large as in cutting). Therefore, the adhesion between the base material and the coating material is not required to be so high as to be considered a problem, such as the base material and the blade material of a cutting tool, and diamond (hardest among the main materials and CV
Noting that D-method diamond synthesis technology has progressed and established, we thought that CVD Tiremont could be used.
本発明は」−記の考えに基づいてなされたもので、基材
の内側孔内面に均一なコーティング層を有する長寿命の
ダイスを提供することを目的とする。The present invention has been made based on the above idea, and an object of the present invention is to provide a long-life die having a uniform coating layer on the inner surface of the inner hole of the base material.
」１記の目的を達成するため、本発明にかかるダイスは
、所定形状に成形された基材の内側孔内面をＣＶ Ｄダ
イヤモンドてコーティングしてなる。In order to achieve the above object, the die according to the present invention is formed by coating the inner surface of the inner hole of a base material formed into a predetermined shape with CVD diamond.
本発明に用いられるダイス基材の材料としては、ＷＣ１
焼結５ｉＣ１焼結Ｓｉ３Ｎ４、焼結ＴｉＢ、、焼結ダイ
ヤモンド、或いはＣＶ Ｉ） 法でつくられたＳｉＣ等
、通常ダイスの材料として用いられるものが好適である
。As the material of the die base material used in the present invention, WC1
Suitable materials are those commonly used as materials for dies, such as sintered 5iC1, sintered Si3N4, sintered TiB, sintered diamond, or SiC made by the CVI method.
これら材料を成形、加工して第１図（ａ ）（ｂ ’）
に示すダイス基材１かつくられる。ダイス基材１の内側
孔２は、対象とする線の材質によ−コてその形状か多少
異なるが、本発明のダイス基材の内側孔２の寸法は、コ
ーティングするＣ Ｖ ｌ）ダイスの厚みを考慮して、
目標とするダイスの内側孔より、０．１〜０ 、３ ｍ
ｍ大きく形成する。Figure 1 (a) (b') is formed by molding and processing these materials.
A die base material 1 shown in is made. The shape of the inner hole 2 of the die base material 1 differs somewhat depending on the material of the target wire, but the dimensions of the inner hole 2 of the die base material of the present invention are determined by the CV l) of the die to be coated. Considering the thickness,
0.1 to 0.3 m from the target inner hole of the die
m large size.
また、基材強度か不足する場合、或いは装置に固定する
場合に欠損する懸念かある場合には第２図（ａ ）（ｂ
）に示すように外側を金属３て補強してもよい。In addition, if the strength of the base material is insufficient, or if there is a risk of damage when fixing it to the device, please refer to Figures 2 (a) and (b).
), the outside may be reinforced with metal 3.
上記基材１の内側孔２にＣＶＤ法によってダイヤモンド
を析出させるには、一般にＣＶＤ法で用いられるマイロ
波法、プラズマ法、ポットフィラメント法等いずれも使
用出来るか、内側孔２の中まで、ＣＶＤタイヤモンドを
析出させるには、内側孔２へのカス供給を改善したホッ
トフィラメント法が好適である。In order to deposit diamond in the inner hole 2 of the base material 1 by the CVD method, it is possible to use any of the microwave method, plasma method, pot filament method, etc. that are generally used in the CVD method. A hot filament method, which improves the supply of waste to the inner hole 2, is suitable for depositing tire oxide.
ホットフィラメント法の装置としては、例えば第３図に
示すように、基材１か七ノドされる減圧管１１８を有す
る容器１１と、セットされた基材の内側孔２に挿通され
、加熱温度が調整自在な加熱用タングステンフィラメン
ト１２と、温度が調整可能な補助加熱ヒータ１３と、セ
ットされた基材の内側孔２」二部に開口する原料供給管
１４よりなる装置、或いは第４図に示すように（第３図
と同一機能部分には同一符号が付しである。）加熱用タ
ングステンフィラメント１２か基材１の下部に設けられ
、補助加熱ヒータ１３が基材１の側部に設けられた装置
などがあげられる。For example, as shown in FIG. 3, the apparatus for the hot filament method includes a container 11 having a pressure reducing tube 118 in which a base material 1 or 7 is heated, and a container 11 that is inserted into an inner hole 2 of the set base material to adjust the heating temperature. A device consisting of a tungsten filament 12 for heating that can be freely adjusted, an auxiliary heater 13 whose temperature can be adjusted, and a raw material supply pipe 14 that opens into the inner hole 2'' of the set base material, or as shown in FIG. (The same functional parts as in FIG. 3 are given the same reference numerals.) A heating tungsten filament 12 is provided at the bottom of the base material 1, and an auxiliary heater 13 is provided at the side of the base material 1. Examples include equipment that has been installed.
」二記装置を用いてＣＶ Ｉ）ダイヤモンドを内側孔２
にコーティングするには、先ず基材１を容’Ａ：９１１
内の所定位置にセットし、加熱用タングステンフィラメ
ントを内側孔２に挿通或いは下部に配置し、水素で１〜
２ ｖｏｃ％に希釈されたメタン或いはエチルアルコー
ル等を原料ガス供給管１４を介して供給しながら、減圧
管１１ａより１４１気して容器１１内を３０〜５ＱＴｏ
ｒｒに保持する。I) Insert the diamond into the inner hole 2 using the device described above.
To coat substrate 1, first coat the substrate 1 with
The tungsten filament for heating is inserted into the inner hole 2 or placed at the bottom, and heated with hydrogen.
While supplying methane, ethyl alcohol, etc. diluted to 2 VOC% through the raw material gas supply pipe 14, the inside of the container 11 is heated to 30 to 5 QTo by applying 141 atmospheres from the pressure reducing pipe 11a.
hold at rr.
次イで、加熱用タングステンフィラメント１２を約２０
００°Ｃに加熱するとともに、基材１のＫＡ度が７００
〜ｓ ｏ ｏ ’ｃになるように補助加熱ヒータ１４を
調整する。この操作により内側孔２内面にＣＶＤタイヤ
モンドか析出する。膜厚は５０〜１５０μｍか適当であ
る。In the next step, add approximately 20 tungsten filaments 12 for heating.
While heating to 00°C, the KA degree of base material 1 is 700.
Adjust the auxiliary heater 14 so that the temperature becomes ~s o o'c. Through this operation, CVD tire compound is deposited on the inner surface of the inner hole 2. The film thickness is suitably 50 to 150 μm.
」二記ＣＶＤタイヤモンドがコーティングされた基材を
装置より取出し、１μｍ以下のタイヤモント砥粒を銅線
、或いは鉄線なとにまぶしながら研摩するスカイフ法類
似の方ａモによって、所定口径のダイスに仕」二げる。The base material coated with the CVD Tiemon is removed from the equipment and polished using a method similar to the Skaife method, in which copper wire or iron wire is sprinkled with Tiaymont abrasive grains of 1 μm or less, and a die of a predetermined diameter is used. ``Nigeru''.
なお基材としてＧｏなどのメタルボンドされたものを使
用する場合には、Ｃｏなとを触媒とじて析出するタイヤ
モンドか黒鉛化するので、基材表面のＣｏを酸洗、或い
は基材１をプラス極とし、炭素棒等をマイナス極とし数
１０ ｍＡ ／ ｃｍ”の電流密度で５〜１０分電気分
解することにより、表面から数μｍの範囲のＣｏを除去
した後、ＣＶＤダイヤモンドをコーティングする。In addition, when using a metal-bonded material such as Go as a base material, the cobalt on the surface of the base material is acid-washed or the base material 1 is After electrolysis is performed for 5 to 10 minutes at a current density of several 10 mA/cm'' using a carbon rod or the like as a positive electrode and a negative electrode to remove Co within a range of several μm from the surface, CVD diamond is coated.
次に実施例、比較例を示して本発明を説明する。 Next, the present invention will be explained by showing examples and comparative examples.
実施例１〜７
材料としてＷＣ，焼結ＳＩ３Ｎ４、焼結Ｔ ｉ Ｂ ｔ
、焼結ダイヤモンド、焼結５ｉＣ１焼結ＣＢＮ、ＣＶＤ
法ＳｉＣを用いて基材をつ（す、この基材の内側孔２に
ＣＶＤダイヤモンドをコーティングし、次いで研摩して
ダイスを作製した。Examples 1 to 7 Materials: WC, sintered SI3N4, sintered T i B t
, sintered diamond, sintered 5iC1 sintered CBN, CVD
A substrate was prepared using processed SiC, the inner hole 2 of this substrate was coated with CVD diamond, and then polished to produce a die.
作成したダイスの内側孔は、公知の底層素鋼線引き用ダ
イスの形状とし、最小内径０ 、５ ｍｍ、外径１０ｍ
ｍ、厚み４ｍｍとした。The inner hole of the created die has the shape of a known die for drawing bottom-layer raw steel wire, with a minimum inner diameter of 0.5 mm and an outer diameter of 10 mm.
m, and the thickness was 4 mm.
これらダイスを用いて、銅線の線引きを行なった。操作
条件は、銅線のダイス人口側を０．５５ｍｍ１出口側を
０ 、５ ｍｍ、線引き速度を１５００ｍ／ｍｍとし、
１万ｍ毎にダイスの内側孔内面をチエツクして、内面に
荒れが発生するまでに処理した線の長さをダイスの寿命
とした。Copper wire was drawn using these dies. The operating conditions were as follows: the copper wire die population side was 0.55 mm, the exit side was 0.5 mm, the wire drawing speed was 1500 m/mm,
The inner surface of the inner hole of the die was checked every 10,000 m, and the length of the wire treated until the inner surface became rough was defined as the life of the die.
比較例１〜７
実施例の基材と同じ材料を用いて、ダイヤモンドコーテ
ィングしたダイスと同じ寸法のダイスを作製し、同様な
試験に供した。Comparative Examples 1 to 7 Using the same material as the base material of the example, dies having the same dimensions as the diamond-coated dies were prepared and subjected to similar tests.
実施例１〜７、比較例１〜７の結果を一括して第１表に
示す。The results of Examples 1 to 7 and Comparative Examples 1 to 7 are collectively shown in Table 1.
第 １ 表
〔発明の効果〕
以」二述べたように、本発明に係る線引き用ダイスは、
ＣＶＤダイヤモンドがコーティングされているので寿命
か大幅に延長され、しかもコーティングしたダイヤモン
ドの剥離は発生せす、基材として安価なＷＣを用いても
、これにＣＶＤダイヤモンドコーティングしたダイスの
寿命は、高価な基材を用いた場合に比して、大きな損色
のないダイスか得られる。また内側孔内面が荒れて寿命
かつきたダイスは、再度ＣＶＤダイヤモンドコーティン
グを行ない、研摩することにより同じ寸法のダイスに再
生出来る等、多くの長所を有する。Table 1 [Effects of the Invention] As mentioned above, the wire drawing die according to the present invention has the following effects:
Since the die is coated with CVD diamond, the lifespan is greatly extended, and the coated diamond does not peel off. Dice with no significant color loss can be obtained compared to when using a base material. Furthermore, a die that has reached the end of its life due to roughness on the inner surface of the inner hole has many advantages, such as being able to be recycled into a die of the same size by applying CVD diamond coating again and polishing.
第１図（ａ ）（ｂ ）は、ダイス基材の一実施例を示
すもので、第１図（ａ）は平面図、第１図（ｂ）は第１
図＜ａ）のＩ−１線矢視断面図、第２図（ａ ）（ｂ
）は、外周に補強用の金属を取付けた第１図（ａ）、第
１図（ｂ）相当図、第３図および第４図は、基材にＣＶ
ＩつタイヤモンＩ・をコーティングするホットフィラ
メント法ＣＶＤ装置の例を示す図である。
１・・・・・基材、２・・・・・内側孔、３・・・・金
属、１１・・容器、Ｉｌａ ・・・・減圧管、１２・
・・・加熱用タングステンフィラメント、ｌ ３
補助加熱ヒータ、１４・・・・・原料ガス供給管。1(a) and 1(b) show an example of the die base material, FIG. 1(a) is a plan view, and FIG. 1(b) is a first embodiment.
2 (a) (b)
) is a figure corresponding to Fig. 1(a) and Fig. 1(b) with reinforcing metal attached to the outer periphery, Fig. 3 and Fig. 4 are with CV attached to the base material.
1 is a diagram showing an example of a hot filament CVD apparatus for coating Tiremon I. 1...Base material, 2...Inner hole, 3...Metal, 11...Container, Ila...Reducing pressure tube, 12...
... Tungsten filament for heating, l 3
Auxiliary heater, 14... Raw material gas supply pipe.
Claims (4)
ィングしたことを特徴とする線引き用ダイス。(1) A wire drawing die characterized in that the inner surface of the inner hole of the base material is coated with CVD diamond.
の線引き用ダイス。(2) The wire drawing die according to claim (1), wherein the base material is made of cemented carbide.
、ＳｉＣ、Ｓｉ＿３Ｎ＿４、またはＴｉＢ＿２を用いる
請求項（１）記載の線引き用ダイス。(3) Sintered diamond, CBN as a base material
, SiC, Si_3N_4, or TiB_2. The wire drawing die according to claim 1.
請求項（１）記載の線引き用ダイス。(4) The wire drawing die according to claim (1), wherein SiC manufactured by CVD is used as the base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25140389A JPH03114610A (en) | 1989-09-27 | 1989-09-27 | Die for wire drawing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25140389A JPH03114610A (en) | 1989-09-27 | 1989-09-27 | Die for wire drawing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03114610A true JPH03114610A (en) | 1991-05-15 |
Family
ID=17222326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25140389A Pending JPH03114610A (en) | 1989-09-27 | 1989-09-27 | Die for wire drawing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03114610A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2850116A1 (en) * | 2002-12-02 | 2004-07-23 | Alesages Diamant Carbure Adc | Reactor for diamond synthesis assisted by microwave plasma has system for forcing and depositing diamond germination species on inner walls of holes in wire drawing dies |
| JP2008013782A (en) * | 2006-06-30 | 2008-01-24 | Kyocera Corp | Apparatus and method for forming film |
| CN109332700A (en) * | 2018-12-14 | 2019-02-15 | 东北大学 | A kind of preparation method of TiB enhancing medical porous titanium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60208473A (en) * | 1984-03-30 | 1985-10-21 | Mitsubishi Metal Corp | Artificial diamond-coated tool member |
| JPS6462214A (en) * | 1987-09-01 | 1989-03-08 | Asahi Diamond Ind | Regeneration for diamond die |
-
1989
- 1989-09-27 JP JP25140389A patent/JPH03114610A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60208473A (en) * | 1984-03-30 | 1985-10-21 | Mitsubishi Metal Corp | Artificial diamond-coated tool member |
| JPS6462214A (en) * | 1987-09-01 | 1989-03-08 | Asahi Diamond Ind | Regeneration for diamond die |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2850116A1 (en) * | 2002-12-02 | 2004-07-23 | Alesages Diamant Carbure Adc | Reactor for diamond synthesis assisted by microwave plasma has system for forcing and depositing diamond germination species on inner walls of holes in wire drawing dies |
| JP2008013782A (en) * | 2006-06-30 | 2008-01-24 | Kyocera Corp | Apparatus and method for forming film |
| JP4741430B2 (en) * | 2006-06-30 | 2011-08-03 | 京セラ株式会社 | Film forming apparatus and film forming method |
| CN109332700A (en) * | 2018-12-14 | 2019-02-15 | 东北大学 | A kind of preparation method of TiB enhancing medical porous titanium |
| CN109332700B (en) * | 2018-12-14 | 2020-03-20 | 东北大学 | Preparation method of TiB-reinforced medical porous titanium |
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