JPH03114197A - Organic thin-film el element - Google Patents

Organic thin-film el element

Info

Publication number
JPH03114197A
JPH03114197A JP25320789A JP25320789A JPH03114197A JP H03114197 A JPH03114197 A JP H03114197A JP 25320789 A JP25320789 A JP 25320789A JP 25320789 A JP25320789 A JP 25320789A JP H03114197 A JPH03114197 A JP H03114197A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
light emitting
el element
organic thin
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25320789A
Other versions
JP2773297B2 (en )
Inventor
Masayasu Ishiko
Keiji Nunomura
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/5012Electroluminescent [EL] layer

Abstract

PURPOSE: To provide an EL element having high brightness with low voltage and an excellent light emission efficiency by interposing a layer as a mixture of electric charge implanting material and an organic fluorescent substance between an electric charge implant layer and a light emitting layer.
CONSTITUTION: A clear electrode 2 consisting of ITO is formed on a glass plate 1, which is followed by formation of three layers one after another-i.e., a pos. hole implant layer 3 consisting of N,N,N',N'-tetraphenyl-4,4'- diaminobyphenyl, a layer 4 as mixture of diamine and tris (8-hydroxyquinoline) aluminum as organic fluorescent substance in the proportion of 1:1, and a light emitting layer 5 using almi-quinoline. Finally a metal electrode 6 is formed by the electron beam evaporation method, and thus an organic thin film light emitting element is accomplished.
COPYRIGHT: (C)1991,JPO&Japio
JP25320789A 1989-09-28 1989-09-28 The organic thin film el element Expired - Lifetime JP2773297B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25320789A JP2773297B2 (en) 1989-09-28 1989-09-28 The organic thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25320789A JP2773297B2 (en) 1989-09-28 1989-09-28 The organic thin film el element

Publications (2)

Publication Number Publication Date
JPH03114197A true true JPH03114197A (en) 1991-05-15
JP2773297B2 JP2773297B2 (en) 1998-07-09

Family

ID=17248046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25320789A Expired - Lifetime JP2773297B2 (en) 1989-09-28 1989-09-28 The organic thin film el element

Country Status (1)

Country Link
JP (1) JP2773297B2 (en)

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190088A (en) * 1989-12-20 1991-08-20 Sanyo Electric Co Ltd Organic el element
US5540999A (en) * 1993-09-09 1996-07-30 Takakazu Yamamoto EL element using polythiophene
US5792557A (en) * 1994-02-08 1998-08-11 Tdk Corporation Organic EL element
WO1999012396A1 (en) * 1997-09-01 1999-03-11 Seiko Epson Corporation Electroluminescent element and method of producing the same
WO2001026425A1 (en) * 1999-10-05 2001-04-12 Matsushita Electric Industrial Co., Ltd. Luminescent device and method for manufacturing the same, and display and illuminator comprising the same
JP2004247313A (en) * 1998-03-13 2004-09-02 Cambridge Display Technol Ltd Electroluminescent element and its manufacturing method
WO2005009088A1 (en) * 2003-07-23 2005-01-27 Konica Minolta Holdings, Inc. Organic electroluminescent device, illuminating device, and display
JP2006309955A (en) * 2005-04-26 2006-11-09 Sony Corp Manufacturing method for organic electroluminescent element, and organic electroluminescent element
US7173370B2 (en) 2001-02-01 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7196360B2 (en) 2001-02-08 2007-03-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7332857B2 (en) 2001-01-18 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7342355B2 (en) 2000-12-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having organic light emitting material with mixed layer
US7387904B2 (en) 2003-10-03 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US7399991B2 (en) 2001-02-22 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
US7432116B2 (en) 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
US7462372B2 (en) 2000-09-08 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and thin film forming apparatus
US7488986B2 (en) 2001-10-26 2009-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7550173B2 (en) 2001-01-17 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and method of manufacturing same
US7572522B2 (en) 2000-12-28 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US7592193B2 (en) 2001-10-30 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7629025B2 (en) 2001-02-08 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US7732808B2 (en) 2003-09-26 2010-06-08 Semiconductor Energy Laboratory Co., Ltd Light-emitting device and method for manufacturing the same
US7732811B2 (en) 2006-12-04 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7745989B2 (en) 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
US7790296B2 (en) 2005-05-20 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7893427B2 (en) 2004-07-23 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US8017252B2 (en) 2005-06-22 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
JP2011224503A (en) * 2010-04-22 2011-11-10 Fujifilm Corp Method and apparatus for manufacturing thin film
JP2012028823A (en) * 2011-11-09 2012-02-09 Konica Minolta Holdings Inc Organic electroluminescent element
US8334057B2 (en) 2005-06-08 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8404500B2 (en) 2009-11-02 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance
US8420227B2 (en) 2005-03-23 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US9224976B2 (en) 2008-11-19 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US9349977B2 (en) 2001-02-01 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having mixed layer including hole transporting compound
US9564609B2 (en) 2011-02-11 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including electrode of three layers
US9570697B2 (en) 2003-12-26 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
JP2017038079A (en) * 2011-03-30 2017-02-16 株式会社半導体エネルギー研究所 Light emitting element and light emitting device

Cited By (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190088A (en) * 1989-12-20 1991-08-20 Sanyo Electric Co Ltd Organic el element
US5540999A (en) * 1993-09-09 1996-07-30 Takakazu Yamamoto EL element using polythiophene
US5792557A (en) * 1994-02-08 1998-08-11 Tdk Corporation Organic EL element
US6825611B2 (en) 1997-09-01 2004-11-30 Seiko Epson Corporation Electroluminescent elements with light-emitting layer containing first and second compounds
WO1999012396A1 (en) * 1997-09-01 1999-03-11 Seiko Epson Corporation Electroluminescent element and method of producing the same
US6575800B1 (en) 1997-09-01 2003-06-10 Seiko Epson Corporation Electroluminescent element and method of producing the same
US7393704B2 (en) 1998-03-13 2008-07-01 Cambridge Display Tech Electroluminescent devices
JP2004247313A (en) * 1998-03-13 2004-09-02 Cambridge Display Technol Ltd Electroluminescent element and its manufacturing method
US7078251B2 (en) 1998-03-13 2006-07-18 Cambridge Display Technology Ltd. Electroluminescent devices
US6897473B1 (en) 1998-03-13 2005-05-24 Cambridge Display Technology Ltd. Electroluminescent devices
US7449714B2 (en) 1998-03-13 2008-11-11 Cambridge Display Technology Ltd. Electroluminescent devices
US7227180B2 (en) 1998-03-13 2007-06-05 Cambridge Display Technology Ltd. Electroluminescent devices
US8115199B2 (en) 1998-03-13 2012-02-14 Cambridge Display Technology Ltd. Electroluminescent devices
US6910933B1 (en) 1999-10-05 2005-06-28 Matsushita Electric Industrial Co., Ltd. Light emitting element and producing method thereof, and display device and lighting device using the same
WO2001026425A1 (en) * 1999-10-05 2001-04-12 Matsushita Electric Industrial Co., Ltd. Luminescent device and method for manufacturing the same, and display and illuminator comprising the same
US7462372B2 (en) 2000-09-08 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and thin film forming apparatus
US7744949B2 (en) 2000-09-08 2010-06-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing method thereof and thin film forming apparatus
US8432094B2 (en) 2000-12-28 2013-04-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7342355B2 (en) 2000-12-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device having organic light emitting material with mixed layer
US7915807B2 (en) 2000-12-28 2011-03-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2013033762A (en) * 2000-12-28 2013-02-14 Semiconductor Energy Lab Co Ltd Light-emitting device
JP2016028392A (en) * 2000-12-28 2016-02-25 株式会社半導体エネルギー研究所 Light-emitting device
US9362518B2 (en) 2000-12-28 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9209418B2 (en) 2000-12-28 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7572522B2 (en) 2000-12-28 2009-08-11 Semiconductor Energy Laboratory Co., Ltd. Luminescent device
US8878431B2 (en) 2000-12-28 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2014160850A (en) * 2000-12-28 2014-09-04 Semiconductor Energy Lab Co Ltd The light-emitting device
KR100890163B1 (en) * 2000-12-28 2009-03-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light emitting device and method of manufacturing the same
US7550173B2 (en) 2001-01-17 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Luminescent device and method of manufacturing same
US7332857B2 (en) 2001-01-18 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7459722B2 (en) 2001-02-01 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US9349977B2 (en) 2001-02-01 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having mixed layer including hole transporting compound
US7173370B2 (en) 2001-02-01 2007-02-06 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US8174007B2 (en) 2001-02-01 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US9219241B2 (en) 2001-02-01 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US9608224B2 (en) 2001-02-01 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US7858977B2 (en) 2001-02-01 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and display device using the element
US8513648B2 (en) 2001-02-08 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7196360B2 (en) 2001-02-08 2007-03-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7456425B2 (en) 2001-02-08 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7629025B2 (en) 2001-02-08 2009-12-08 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and film formation method
US7432116B2 (en) 2001-02-21 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for film deposition
US7399991B2 (en) 2001-02-22 2008-07-15 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
US7663149B2 (en) 2001-02-22 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting device and display device using the same
US7488986B2 (en) 2001-10-26 2009-02-10 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US7592193B2 (en) 2001-10-30 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
WO2005009088A1 (en) * 2003-07-23 2005-01-27 Konica Minolta Holdings, Inc. Organic electroluminescent device, illuminating device, and display
US7732808B2 (en) 2003-09-26 2010-06-08 Semiconductor Energy Laboratory Co., Ltd Light-emitting device and method for manufacturing the same
US8178869B2 (en) 2003-09-26 2012-05-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8507903B2 (en) 2003-09-26 2013-08-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US8216875B2 (en) 2003-09-26 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
US7994496B2 (en) 2003-10-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US9461271B2 (en) 2003-10-03 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US7387904B2 (en) 2003-10-03 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element
US9570697B2 (en) 2003-12-26 2017-02-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element
US8368060B2 (en) 2004-07-23 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US8872169B2 (en) 2004-07-23 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US9520532B2 (en) 2004-07-23 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US8368059B2 (en) 2004-07-23 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US7893427B2 (en) 2004-07-23 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
US8916276B2 (en) 2005-03-23 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US8420227B2 (en) 2005-03-23 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Composite material, light emitting element and light emitting device
US7851989B2 (en) 2005-03-25 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9246056B2 (en) 2005-03-25 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8362688B2 (en) 2005-03-25 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP2006309955A (en) * 2005-04-26 2006-11-09 Sony Corp Manufacturing method for organic electroluminescent element, and organic electroluminescent element
US8445121B2 (en) 2005-05-20 2013-05-21 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7883788B2 (en) 2005-05-20 2011-02-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US7790296B2 (en) 2005-05-20 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US8227097B2 (en) 2005-05-20 2012-07-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US8048543B2 (en) 2005-05-20 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US8334057B2 (en) 2005-06-08 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US9263645B2 (en) 2005-06-08 2016-02-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8815419B2 (en) 2005-06-22 2014-08-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US8252434B2 (en) 2005-06-22 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US8541114B2 (en) 2005-06-22 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US8017252B2 (en) 2005-06-22 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance using the same
US7745989B2 (en) 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
US7948169B2 (en) 2005-06-30 2011-05-24 Semiconductor Energy Larboratory Co., Ltd. Light emitting element with composite layers of varying concentration, light emitting device, and electronic apparatus
US8519617B2 (en) 2005-06-30 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting element having a metal oxide composite layer, and light emitting device, and electronic apparatus
US8378570B2 (en) 2005-06-30 2013-02-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic apparatus having first and second composite layers with different metal concentrations
US8319210B2 (en) 2006-12-04 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7732811B2 (en) 2006-12-04 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8916857B2 (en) 2006-12-04 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US9224976B2 (en) 2008-11-19 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US8404500B2 (en) 2009-11-02 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting element, light-emitting element, light-emitting device, lighting device, and electronic appliance
US8803188B2 (en) 2009-11-02 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting element, light-emitting element, Light-emitting device, lighting device, and electronic appliance
JP2011224503A (en) * 2010-04-22 2011-11-10 Fujifilm Corp Method and apparatus for manufacturing thin film
US9564609B2 (en) 2011-02-11 2017-02-07 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including electrode of three layers
JP2017038079A (en) * 2011-03-30 2017-02-16 株式会社半導体エネルギー研究所 Light emitting element and light emitting device
JP2012028823A (en) * 2011-11-09 2012-02-09 Konica Minolta Holdings Inc Organic electroluminescent element

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