JPH03112932U - - Google Patents
Info
- Publication number
- JPH03112932U JPH03112932U JP2086590U JP2086590U JPH03112932U JP H03112932 U JPH03112932 U JP H03112932U JP 2086590 U JP2086590 U JP 2086590U JP 2086590 U JP2086590 U JP 2086590U JP H03112932 U JPH03112932 U JP H03112932U
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- purge gas
- exhaust
- flange
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 2
- 238000002791 soaking Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 3
- 238000001816 cooling Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Description
第１図は本考案装置の反応室構造の一例の構成
を示す説明用簡略縦断面図、第２図は従来装置の
反応室構造の一例の構成を示す説明用簡略縦断面
図である。
１……反応管、１ａ，１ｂ……内，外側反応管
、２……ウエーハ、３……（石英）ボート、４…
…均熱管、５……ヒータ、６……反応ガス導入管
、７……パージガス導入管、８……排気路、９…
…ガス導入口、１０……排気口、１１……ステン
レス固定フランジ、１２……ステンレスパージ排
気フランジ、１３……ステンレス反応ガス排気フ
ランジ、１４……水冷ジヤケツト、１５……（ゴ
ム製）パツキン、１６……ガス導入口、１７……
排気口。
FIG. 1 is a simplified longitudinal cross-sectional view for explaining the structure of an example of the reaction chamber structure of the apparatus of the present invention, and FIG. 2 is a simplified longitudinal cross-sectional view for explaining the structure of an example of the reaction chamber structure of the conventional apparatus. 1...Reaction tube, 1a, 1b...Inner and outer reaction tubes, 2...Wafer, 3...(quartz) boat, 4...
... Soaking tube, 5 ... Heater, 6 ... Reaction gas introduction pipe, 7 ... Purge gas introduction pipe, 8 ... Exhaust path, 9 ...
... Gas inlet port, 10 ... Exhaust port, 11 ... Stainless steel fixed flange, 12 ... Stainless steel purge exhaust flange, 13 ... Stainless steel reaction gas exhaust flange, 14 ... Water cooling jacket, 15 ... (Rubber) packing, 16...Gas inlet, 17...
exhaust port.
Claims (1)
３を挿入し、反応管１内のウエーハ２を均熱管４
を介してヒータ５により加熱すると共に反応管１
内上部に反応ガス導入第６図により導入された反
応ガスを反応管１とボート３との間を通して排気
し、ウエーハ２に半導体薄膜を生成させる縦型拡
散装置において、反応管１を内、外側反応管１ａ
，１ｂの２重構造とし、この内、外側反応管１ａ
，１ｂ間内上部にパージガスを導入するパージガ
ス導入管７を設け、このパージガス導入管７より
導入されたパージガスを排気する排気路８の排気
口１７を反応ガス導入管６のガス導入口９の外周
に同心状に配設せしめてなる縦型拡散装置の反応
室構造。 (2) 外側反応管１ｂの固定フランジ１１、排気
路８のパージガス排気フランジ１２及び排気口１
０の反応ガス排気フランジ１３をそれぞれ水冷ジ
ヤケツト１４式ステンレスフランジとし、このス
テンレスパージガス排気フランジ１２及びステン
レス反応ガス排気フランジ１３にそれぞれパツキ
ン１５を介して外部と接続してなる請求項第１項
記載の縦型拡散装置の反応室構造。[Claims for Utility Model Registration] (1) Insert the boat 3 on which the wafer 2 is placed into the reaction tube 1, and transfer the wafer 2 inside the reaction tube 1 to the soaking tube 4.
The reaction tube 1 is heated by the heater 5 through the
Introducing reaction gas into the inner upper part In a vertical diffusion device, the reaction gas introduced as shown in FIG. Reaction tube 1a
, 1b, of which the outer reaction tube 1a
, 1b, a purge gas introduction pipe 7 for introducing the purge gas is provided at the upper part of the space between the purge gas introduction pipe 7 and the exhaust port 17 of the exhaust passage 8 for exhausting the purge gas introduced from the purge gas introduction pipe 7. The reaction chamber structure is a vertical diffusion device that is arranged concentrically with each other. (2) Fixed flange 11 of the outer reaction tube 1b, purge gas exhaust flange 12 of the exhaust path 8, and exhaust port 1
1, wherein each of the reaction gas exhaust flanges 13 of No. 0 is a water-cooled jacket 14 type stainless steel flange, and the stainless steel purge gas exhaust flange 12 and the stainless steel reaction gas exhaust flange 13 are connected to the outside via packings 15, respectively. Reaction chamber structure of vertical diffusion device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2086590U JPH03112932U (en) | 1990-02-28 | 1990-02-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2086590U JPH03112932U (en) | 1990-02-28 | 1990-02-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03112932U true JPH03112932U (en) | 1991-11-19 |
Family
ID=31523948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2086590U Pending JPH03112932U (en) | 1990-02-28 | 1990-02-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03112932U (en) |
-
1990
- 1990-02-28 JP JP2086590U patent/JPH03112932U/ja active Pending
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