JPH03108717A - Silicon wafer cleaning apparatus - Google Patents
Silicon wafer cleaning apparatusInfo
- Publication number
- JPH03108717A JPH03108717A JP24697289A JP24697289A JPH03108717A JP H03108717 A JPH03108717 A JP H03108717A JP 24697289 A JP24697289 A JP 24697289A JP 24697289 A JP24697289 A JP 24697289A JP H03108717 A JPH03108717 A JP H03108717A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- tank
- cleaned
- wafer
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 9
- 239000010703 silicon Substances 0.000 title claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims abstract description 59
- 238000005406 washing Methods 0.000 claims abstract description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 230000005484 gravity Effects 0.000 claims abstract description 6
- 239000000969 carrier Substances 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 239000000243 solution Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000003814 drug Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229940079593 drug Drugs 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000008237 rinsing water Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板の製造に利用する。[Detailed description of the invention] [Industrial application field] INDUSTRIAL APPLICATION This invention is utilized for manufacturing a semiconductor substrate.
本発明はシリコンウエノ＼−の洗浄装置の改良にに関す
る。The present invention relates to an improvement in a cleaning device for silicon ueno.
本発明はキャリアに保持されて洗浄工程に到達するシリ
コンウェハーの洗浄装置において、シリコンウェハーの
表面に洗浄液を噴射するシャワー手段を設けることによ
り、
洗浄液の消費量を経済化するとともに洗浄品質を均一化
するものである。The present invention is a cleaning device for silicon wafers that are held in a carrier and reaches the cleaning process, and by providing a shower means that sprays cleaning liquid onto the surface of the silicon wafer, the amount of cleaning liquid consumed can be made economical and the quality of cleaning can be made uniform. It is something to do.
従来の装置では、複数枚（例えば２５枚）の被洗浄ウェ
ハーを１基のキャリアに保持し、このキャリアを自動搬
送機により酸またはアリカリの洗浄液が貯えられている
洗浄槽に浸したのち、さらに純水を貯えた水洗槽に浸す
構造になっている。In conventional equipment, a plurality of wafers to be cleaned (for example, 25 wafers) are held in one carrier, and this carrier is immersed in a cleaning tank containing an acid or alkaline cleaning solution by an automatic conveyor, and then further cleaned. It is designed to be immersed in a washing tank that stores pure water.
この構造では、１基のキャリアに多数個のウェハーを保
持すると、キャリアの形状が大きくなり、これを収容す
る洗浄槽や水洗槽の形状が大きくなる。また、この構造
で例え１枚のウェハーを洗浄するときにも、この大形の
キャリア１基を稼動させねばならない。さらに、ウェハ
ーの大口径化がすすみ、現在では直径が１５０ないし２
００ｍｍのものが主流となってきている。直径が２００
ｍｍ位のウェハーなどを使用する場合、１枚のウェハー
に対する洗浄の重要性は非常に大きい。このため、１基
のキャリアに１枚または少数枚く例えば４枚）のウェハ
ーを重力方向に平行に保持する改良が行われた。In this structure, when a large number of wafers are held in one carrier, the shape of the carrier becomes large, and the shape of the washing tank or water washing tank that accommodates the carrier becomes large. Furthermore, even when cleaning one wafer with this structure, one large carrier must be operated. Furthermore, the diameter of wafers has become larger, and today the diameter of wafers is 150 to 2.
00mm is becoming mainstream. Diameter is 200
When using wafers of about mm size, cleaning of each wafer is extremely important. For this reason, improvements have been made in which one or a few (for example, four) wafers are held in one carrier parallel to the direction of gravity.
しかし、前述の装置では、キャリアはウェハーとともに
洗浄槽や水洗槽に浸漬されるから、キャリアに付着した
汚損物質により槽内に貯えられた洗浄液の汚損が早めら
れる。このため真に必要なウェハーの洗浄量以上の洗浄
液や純水の量が消費される。また洗浄液を加温するため
のエネルギも真にウェハーの洗浄に必要とする以上の熱
量が費やされる。汚損された洗浄液や水洗水の量が増加
すれば、これを廃棄するための処理費用も増加する。However, in the above-mentioned apparatus, since the carrier is immersed together with the wafer in a cleaning tank or a rinsing tank, the cleaning liquid stored in the tank is quickly contaminated by contaminants adhering to the carrier. Therefore, the amount of cleaning liquid and pure water that exceeds the amount of wafer cleaning that is truly necessary is consumed. Furthermore, the amount of energy used to heat the cleaning solution is greater than that actually required for cleaning the wafer. If the amount of contaminated cleaning liquid or washing water increases, the processing cost for disposing of it will also increase.
さらに、この従来装置では各槽内の各液の汚損濃度が許
容濃度となるまで、複数基のキャリア分のウェハーを同
一の液で洗浄する。したがって、最初の新鮮な各液と前
記許容濃度の限界にある各液との汚損度は異なるので、
被洗浄ウェハーの洗浄度は均一でなくなる。Further, in this conventional apparatus, wafers for a plurality of carriers are cleaned with the same solution until the contamination concentration of each solution in each tank reaches an allowable concentration. Therefore, since the degree of contamination between each initially fresh liquid and each liquid at the limit of the above-mentioned allowable concentration is different,
The degree of cleaning of the wafer to be cleaned will not be uniform.
本発明は、これらの欠点を解決するもので、洗浄液や水
洗水の消費量が小さく、これらの加温に必要な熱エネル
ギも小さくとれ、かつウェハーの洗浄度が均一であるシ
リコンウェハーの洗浄装置を提供することを目的とする
。The present invention solves these drawbacks, and provides a silicon wafer cleaning device that consumes less cleaning liquid and water, requires less thermal energy to heat them, and provides uniform wafer cleaning. The purpose is to provide
本発明は、洗浄槽および水洗槽には、それぞれ被洗浄ウ
ェハーの洗浄すべき表面に向けて洗浄液を噴射するシャ
ワー手段を備え、プログラム制御回路により、自動搬送
機の動作に同期して被洗浄ウェハーがそれぞれ洗浄槽お
よび水洗槽の定位置にあるタイミングでこのシャワー手
段に洗浄液を供給する制御手段を設けることを特徴とす
る。In the present invention, each of the cleaning tank and the water washing tank is equipped with a shower means for spraying a cleaning liquid toward the surface of the wafer to be cleaned, and the wafer to be cleaned is moved in synchronization with the operation of the automatic transfer machine by a program control circuit. The present invention is characterized in that a control means is provided for supplying cleaning liquid to the shower means at a timing when the shower means is at a fixed position in the cleaning tank and the rinsing tank, respectively.
重力方向に平行に保持された１枚または少数枚の被洗浄
ウェハーの洗浄すべき表面には、常に新鮮な洗浄液およ
び水洗水がシャワー手段により噴射されるので、被洗浄
ウェハーは均一な洗浄度で洗浄される。Fresh cleaning liquid and rinsing water are always sprayed by the shower means onto the surface of one or a few wafers to be cleaned, which are held parallel to the direction of gravity, so that the wafers to be cleaned are uniformly cleaned. Washed.
シャワー手段は、自動搬送機の動作に同期してキャリア
が洗浄槽および水洗槽のそれぞれ定位置で噴射するよう
プログラム制御回路で制御されるので、各液の無効噴射
量が非常に小さくできる。Since the shower means is controlled by a program control circuit so that the carrier is sprayed at fixed positions in each of the cleaning tank and the rinsing tank in synchronization with the operation of the automatic conveyance machine, the ineffective spray amount of each liquid can be made very small.
また加温手段は噴射する液量に対応する能力を備えてい
ればよいので、熱エネルギを小さくできる。Further, since the heating means only needs to have the ability to correspond to the amount of liquid to be injected, the thermal energy can be reduced.
シャワー手段が、シリコンウェハー１枚（はぼ１００＋
ｔ＋ｍ径の円板状のもの）に対して、片側面より２また
は３個のノズルを含むものである場合は、最も少ない液
の噴射量で最大の洗浄効果をあげることができる。The shower means is one silicon wafer (Habo 100+
If the nozzle includes 2 or 3 nozzles from one side, the maximum cleaning effect can be achieved with the least amount of liquid sprayed.
次に、本発明の実施例を図面を参照して説明する。 Next, embodiments of the present invention will be described with reference to the drawings.
第１図は、本発明一実施例の全体構成の模式図であり、
第２図は同実施例のキャリアの構造図である。本実施例
では、第２図に示すようにキャリア２は１枚の被洗浄ウ
ェハー１を重力方向と平行に保持する。また第１図に示
すように、被洗浄ウェハー１が保持されたキャリア２を
収容する酸またはアルカリ溶液の洗浄槽３では、それぞ
れ貯蔵槽４Ａ、４Ｂ、４Ｃに貯えられた薬剤Ａ、ＢＸＣ
を単独にそれぞれ所定の濃度で含む洗浄液によって洗浄
さる。また被洗浄ウェハー１が保持された前記キャリア
２を収容し、純水タンク６の加温された純水で水洗され
る水洗槽５を備える。さらにこの装置は、被洗浄ウェハ
ー１を載荷したのち洗浄槽３、水洗槽５の順に搬送し、
最後に脱荷するようにキャリア２を搬送する自動搬送機
７を備える。さらに、この自動搬送機７を制御するプロ
グラム制御回路を含む制御器８を備えている。FIG. 1 is a schematic diagram of the overall configuration of an embodiment of the present invention,
FIG. 2 is a structural diagram of the carrier of the same embodiment. In this embodiment, as shown in FIG. 2, the carrier 2 holds one wafer 1 to be cleaned parallel to the direction of gravity. In addition, as shown in FIG. 1, in the acid or alkaline solution cleaning tank 3 that accommodates the carrier 2 holding the wafer 1 to be cleaned, chemicals A, BXC, and the like are stored in storage tanks 4A, 4B, and 4C, respectively.
are washed with a cleaning solution containing each of them individually at a predetermined concentration. Further, a washing tank 5 is provided which accommodates the carrier 2 holding the wafer 1 to be cleaned and is washed with warmed pure water from a pure water tank 6. Further, this device loads the wafer 1 to be cleaned and then transports it to the cleaning tank 3 and then the washing tank 5,
An automatic conveyance machine 7 is provided to convey the carrier 2 so as to unload it at the end. Furthermore, a controller 8 including a program control circuit for controlling the automatic conveyance machine 7 is provided.
本実施例で、自動搬送機７はトロリイコンベアであって
、第１図に示すように駆動部７Ａにより２点鎖線のよう
に大略水平方向に移動しながら、符号３１から３８に示
す破線の楕円位置で一旦停止して、キャリア２を鉛直方
向に昇降する。符号３１から３８の各位置は、順に着荷
位置、薬剤Ａ洗浄位置、第一水洗位置、薬剤Ｂ洗浄位置
、第二水洗位置、薬剤Ｃ洗浄位置、仕上げ水洗位置およ
び脱荷位置である。また前記各位置のうち、薬剤Ａ洗浄
位置３２から薬剤Ｃ洗浄位置３６は前記洗浄槽３に収容
され、仕上げ水洗位置３７は水洗槽５に収容される。In this embodiment, the automatic conveyance machine 7 is a trolley conveyor, and as shown in FIG. Once stopped at the elliptical position, the carrier 2 is raised and lowered in the vertical direction. The positions 31 to 38 are, in order, a loading position, a medicine A washing position, a first washing position, a medicine B washing position, a second washing position, a medicine C washing position, a finishing washing position, and an unloading position. Further, among the respective positions, the drug A washing position 32 to the drug C washing position 36 are accommodated in the washing tank 3, and the finishing washing position 37 is accommodated in the washing tank 5.
また符号９Ａおよび９Ｂはそれぞれキャリア２に被洗浄
ウェハー１の着荷および脱荷を行うローダおよびアンロ
ーダである。Reference numerals 9A and 9B are a loader and an unloader, respectively, for loading and unloading the wafer 1 to be cleaned onto the carrier 2.
ここに本発明の特徴とするところは、洗浄槽３および水
洗槽５は、それぞれ被洗浄ウェハー１の洗浄すべき表面
に向けて、洗浄液を噴射するシャワー手段として、その
表面に対してそれぞれ５個ずつのノズル１０を備えたと
ころにある。さらに、制御器８に内蔵されるプログラム
制御回路８Ａ（第４図参照）が自動搬送機７の前記の各
位置において、キャリア２が鉛直に降下されたときにこ
のシャワー手段を制御Ｖるように構成されたところにあ
る。すなわち、第３図に示すようにキャリア２の下端に
設けられた被検知体２Ａを、洗浄槽３または水洗槽５の
上部に設けられたセンサ１１により検知し、キャリアの
下界および上昇速度を参照して、被洗浄ウェハー１が洗
浄槽３または水洗槽５の定位置にあるタイミングでノズ
ル１０より、それぞれ単独に薬液ＡＳＢ、Ｃを所定の濃
度に溶解した洗浄液または水洗水を、それぞれ電磁弁１
２を制御して噴射を開始し、または停止させる。Here, the feature of the present invention is that each of the cleaning tank 3 and the water washing tank 5 serves as a shower means for spraying a cleaning liquid toward the surface of the wafer 1 to be cleaned, and five shower units each serve as shower means for spraying a cleaning liquid toward the surface of the wafer 1 to be cleaned. It is equipped with two nozzles 10. Further, a program control circuit 8A (see FIG. 4) built in the controller 8 controls the shower means when the carrier 2 is vertically lowered at each of the above-mentioned positions of the automatic conveyance machine 7. It's where it's configured. That is, as shown in FIG. 3, the detected object 2A provided at the lower end of the carrier 2 is detected by the sensor 11 provided at the upper part of the washing tank 3 or the water washing tank 5, and the lower limit and rising speed of the carrier are detected. Then, when the wafer 1 to be cleaned is in a fixed position in the cleaning tank 3 or the rinsing tank 5, the cleaning liquid or rinsing water in which the chemical solutions ASB and C are individually dissolved at a predetermined concentration is supplied from the nozzle 10 to the electromagnetic valve 1, respectively.
2 to start or stop injection.
また前記薬液槽４Ａ、４Ｂ、４Ｃに貯えられた各薬液を
前記電磁弁１２にそれぞれ送出するポンプ１３Ａ、１３
Ｂ、１３Ｃと、この各ポンプに供給される各薬液を適当
な処理温度に加温するためそれぞれ電源１５（第４図参
照）を含む加温槽１４Ａ、１４Ｂ、１４Ｃと、前記各ポ
ンプの送出する各薬液を所定の濃度の各洗浄液にするた
め前記純水タンク６からポンプ１３Ｄを介して送出され
た加温された純水を混入するミキサ１６Δ、１５Ｂ、１
６Ｃとを備える。符号１３Ｅは前記の第一水洗位置３３
、第二水洗位置３５および仕」−げ水洗位置３７におけ
る各ノズルに純水を送出するポンプである。Also, pumps 13A and 13 that send out each chemical solution stored in the chemical solution tanks 4A, 4B, and 4C to the electromagnetic valve 12, respectively.
B, 13C, heating tanks 14A, 14B, 14C each containing a power source 15 (see FIG. 4) for heating each chemical solution supplied to each pump to an appropriate processing temperature, and a delivery system for each of the pumps. Mixers 16Δ, 15B, 1 mix heated pure water sent from the pure water tank 6 via the pump 13D in order to convert each chemical solution into each cleaning liquid at a predetermined concentration.
6C. Reference numeral 13E indicates the first water washing position 33.
, a pump that delivers pure water to each nozzle at the second flush position 35 and the final flush position 37.
第２図において、本実施例では前述のように、キャリア
２に重力方向と平行となるように保持された１枚の被洗
浄ウェハー１ （その直径は例えば１００ｍｍである）
の両面にそれぞれ上段に３個下段に２個の５個ずつ計１
０個のノズル１０が設けられる。In FIG. 2, in this embodiment, as described above, one wafer 1 to be cleaned is held on a carrier 2 so as to be parallel to the direction of gravity (its diameter is, for example, 100 mm).
5 pieces on each side, 3 on the top and 2 on the bottom, total 1
Zero nozzles 10 are provided.
ノズル１０はその最下段のもに示すように、支持具１０
Ａに回転軸１０Ｂおよび首振り腕１０Ｃを介して保持さ
れる。回転軸１０Ｂと首振り腕１０Ｃとはそれぞれねじ
ＩＯＤ、ＩＯＥをゆるめて適宜変位することにより、被
洗浄ウェハー１に対するノズル１０の仰角および首振り
角を調整できる。このようにして、各ノズル１０は被洗
浄ウェハー１の洗浄すべき表面に十分に洗浄液または純
水をふりかけることができる。また各ノズルの後端には
耐蝕性のあるスパイラルチューブＩＯＦで図外の電磁弁
からの固定配管に接続されている。したがって、前記の
ノズル１０の調整の範囲は大きくできる。As shown in the lowermost part of the nozzle 10, a support 10 is attached to the nozzle 10.
A is held via a rotating shaft 10B and a swinging arm 10C. By loosening the screws IOD and IOE and appropriately displacing the rotating shaft 10B and the swing arm 10C, respectively, the elevation angle and swing angle of the nozzle 10 relative to the wafer to be cleaned 1 can be adjusted. In this way, each nozzle 10 can sufficiently sprinkle the cleaning liquid or pure water onto the surface of the wafer 1 to be cleaned. Further, the rear end of each nozzle is connected to a fixed pipe from a solenoid valve (not shown) by a corrosion-resistant spiral tube IOF. Therefore, the adjustment range of the nozzle 10 can be increased.
自動搬送機７は、前記の各位置、とくに符号３２ないし
３７の各位置において、キャリア２の昇降速度とその昇
降ストロークはほぼ一定である。したがって、第３図に
示すようにセンサ１１は、キャリア２が洗浄槽３または
水洗槽５の屋根部３Ｒまたは５Ｒにそれぞれ設けられた
開口部３Ｈまたは５Ｈから進入しようとする時刻を検知
してから、前記制御器８のプログラム制御回路８Ａは、
被洗浄ウェハー１の洗浄すべき表面に対して、ノズル１
０から洗浄液または純水をそのタイミングをあらかじめ
設定されたプログラムに従って噴射の開始および終了を
前記各電磁弁１２をそれぞれ制御することによって行う
。In the automatic conveyance machine 7, the lifting speed and the lifting stroke of the carrier 2 are substantially constant at each of the above-mentioned positions, particularly at each position 32 to 37. Therefore, as shown in FIG. 3, the sensor 11 detects the time when the carrier 2 is about to enter from the opening 3H or 5H provided in the roof 3R or 5R of the washing tank 3 or the washing tank 5, respectively. , the program control circuit 8A of the controller 8,
Nozzle 1 is applied to the surface to be cleaned of wafer 1 to be cleaned.
Starting and ending the injection of cleaning liquid or pure water from zero according to a preset program is performed by controlling each of the electromagnetic valves 12, respectively.
このプログラムは、その被洗浄ウェハーの生産ロフトに
対応して、洗浄職場の作業員が適宜入力する指令データ
が加味される。This program takes into account command data appropriately inputted by workers at the cleaning workplace, corresponding to the production loft of the wafer to be cleaned.
例えば、ある被洗浄ウェハーは薬液Ｂによる処理のみで
よい場合は、作業員は位置３４および３７の０
み有効となるようにプログラムに入力する。この場合は
、自動搬送機は、位置３２．３３．３５．３６では通過
する。すなわち被洗浄ウェハーは位置３４で薬液Ｂを含
む洗浄液で洗浄され、水洗槽５で仕上げ水洗が行われる
。位置３２ないし３７において、原則的には各ノズルが
、キャリアの下降時と上昇時との２回にわたりそれぞれ
噴射するようになっているが、とくに再加工されたウェ
ハーなど汚損の程度が小さいものでは、下降時または上
昇時のいずれか一方とすることができる。For example, if a certain wafer to be cleaned only needs to be treated with chemical solution B, the operator inputs into the program so that only the 0's at positions 34 and 37 are valid. In this case, the automatic transport machine passes through positions 32.33.35.36. That is, the wafer to be cleaned is cleaned with a cleaning liquid containing chemical solution B at a position 34, and a final rinse is performed in a washing tank 5. In principle, each nozzle at positions 32 to 37 injects twice, once when the carrier descends and once when it rises, but this is especially true for wafers that have been reprocessed and have only a small degree of contamination. , either when descending or when ascending.
第４図は、本実施例の制御系のブロック構成図である。FIG. 4 is a block diagram of the control system of this embodiment.
本図において、符号１５および１７はそれぞれ加温槽の
電源および制御バスである。゛前述のように、被洗浄ウ
ェハーには各洗浄液および純水が十分に噴射されるが、
ノズルの取付状態やその噴射の開始および終了のタイミ
ングがそれぞれ適当になされるので、洗浄および水洗の
効果がよくても、その噴射量は可及的小さくなるように
制御される。したがって生産単位あたりに消費される客
演の消費量が小さい。このため客演の加温量は小さい。In this figure, numerals 15 and 17 are the power supply and control buses of the heating tank, respectively.゛As mentioned above, each cleaning solution and pure water are sufficiently sprayed onto the wafer to be cleaned, but
Since the installation state of the nozzle and the timing of the start and end of the injection are adjusted appropriately, the amount of injection is controlled to be as small as possible even if the cleaning and water washing effects are good. Therefore, the amount of guest performances consumed per unit of production is small. For this reason, the amount of heating for guest performers is small.
また例えば薬剤Ｂを含む洗浄液が長時間使用されない場
合は、その加温槽１４Ｂの電源１５は停止状態にあるよ
うに前記プログラム制御回路８Δが制御する。したかっ
−〇洗浄液の加温に要する熱エネルギが小さくてすむ。For example, if the cleaning liquid containing the chemical B is not used for a long time, the program control circuit 8Δ controls the power supply 15 of the heating tank 14B to be in a stopped state. I wanted to -〇Thermal energy required to heat the cleaning solution is small.
また被洗浄ウェハーには、常に新鮮な洗浄水および純水
が噴射されるので、洗浄効果は均一になる。Furthermore, since fresh cleaning water and pure water are always sprayed onto the wafer to be cleaned, the cleaning effect is uniform.
本実施例では、キャリアに１枚のウェハーを保持する例
であったが、被洗浄ウェハーの数は２以上の少数枚（２
〜４程度〉であっても同様に実施できる。In this example, one wafer was held in the carrier, but the number of wafers to be cleaned was a small number of 2 or more (2
4> can be implemented in the same manner.
以上説明したように、本発明によれば、被洗浄ウェハー
をその作動がプログラム制御されるシャワー手段により
洗浄することにより、洗浄液の消費量が小さく、かつ加
温のための熱エネルギが小さくてすみ、各ウェハーごと
の洗浄品質が均一になる効果がある。As explained above, according to the present invention, by cleaning the wafer to be cleaned using the shower means whose operation is program-controlled, the amount of cleaning liquid consumed is small, and the thermal energy for heating is small. This has the effect of making the cleaning quality uniform for each wafer.
１ ２1 2
第１図は本発明一実施例の全体構成を示す模式第２図は
同実施例のキャリアの構造図。
第３図は同実施例の動作説明図。
第４図は同実施例のブロック構成図。
１・・・被洗浄ウェハー、２・・・キャリア、２Ａ・・
・被検知体、３・・・洗浄槽、３Ｈ１５Ｈ・・・洗浄槽
または水洗槽の屋根の開口部、３Ｒ１５Ｒ・・・屋根部
、４Ａ、４Ｂ、４Ｃ・・・それぞれ薬剤Ａ、Ｂ、Ｃの貯
蔵槽、５・・・水洗槽、６・・・加温される純水を貯え
る純水タンク、７・・・自動搬送機、７Ａ・・・駆動部
、８・・制御器、８Ａ・・・プログラム制御回路、９Ａ
、９Ｂ・・・それぞれローダおよびアンローダ、１０・
・・ノズル、１０Ａ・・・支持具、ＩＯＢ・・・回転軸
、ＩＯＣ・・・首振り腕、ｌＱＤ、ＩＯＥ・・・ねじ、
ＩＯＦ・・・スパイラルチューブ、１１・・・センサ、
１２・・・電磁弁、１３Ａ〜１３Ｅ・・・ポンプ、１４
Ａ、１４Ｂ、１４Ｃ・・・加温槽、１５・・・電源、１
６Ａ、１６Ｂ、１６Ｃ・・・ミキサ、１７・・・制御バ
ス、３１〜３８・・・それぞれ着荷位置、薬剤Ａ洗浄位
置、第一水洗位置、薬剤Ｂ洗浄位置、第二水洗位置、薬
剤Ｃ洗浄位置、仕上げ水洗位置、脱荷位置。FIG. 1 is a schematic diagram showing the overall configuration of an embodiment of the present invention. FIG. 2 is a structural diagram of a carrier of the same embodiment. FIG. 3 is an explanatory diagram of the operation of the same embodiment. FIG. 4 is a block diagram of the same embodiment. 1... Wafer to be cleaned, 2... Carrier, 2A...
・Object to be detected, 3...Cleaning tank, 3H15H...Opening in the roof of the cleaning tank or flush tank, 3R15R...Roof part, 4A, 4B, 4C...Respectively for chemicals A, B, and C. Storage tank, 5...Washing tank, 6...Pure water tank for storing purified water to be heated, 7...Automatic transport machine, 7A...Drive unit, 8...Controller, 8A...・Program control circuit, 9A
, 9B... respectively a loader and an unloader, 10.
... Nozzle, 10A... Support, IOB... Rotating shaft, IOC... Oscillating arm, lQD, IOE... Screw,
IOF...Spiral tube, 11...Sensor,
12...Solenoid valve, 13A-13E...Pump, 14
A, 14B, 14C...Heating tank, 15...Power supply, 1
6A, 16B, 16C...Mixer, 17...Control bus, 31-38...Respectively arrival position, chemical A washing position, first water washing position, drug B washing position, second water washing position, drug C washing position, finishing flush position, and unloading position.
Claims (1)
行に保持するキャリアと、この被洗浄ウェハーが保持さ
れたキャリアを収容する洗浄槽と、この被洗浄ウェハー
が保持されたキャリアを収容する水洗槽と、前記キャリ
アを前記洗浄槽および前記水洗槽の順に搬送する自動搬
送機と、この自動搬送機を制御するプログラム制御回路
とを備えたシリコンウェハーの洗浄装置において、 前記洗浄槽および前記水洗槽は、それぞれ被洗浄ウェハ
ーの洗浄すべき表面に向けて洗浄液を噴射するシャワー
手段を備え、 前記プログラム制御回路は、前記自動搬送機の動作に同
期して被洗浄ウェハーがそれぞれ前記洗浄槽および水洗
槽の定位置にあるタイミングで前記シャワー手段に洗浄
液を供給する制御手段を含ことを特徴とするシリコンウ
ェハーの洗浄装置。[Claims] 1. A carrier that holds one or a few wafers to be cleaned parallel to the gravity direction, a cleaning tank that accommodates the carrier that holds the wafer to be cleaned, and a cleaning tank that holds the wafer to be cleaned. A silicon wafer cleaning apparatus comprising: a washing tank for accommodating carriers; an automatic transport machine for transporting the carriers in the order of the washing tank and the washing tank; and a program control circuit for controlling the automatic transport machine. The cleaning tank and the water washing tank are each equipped with a shower means for spraying a cleaning liquid toward the surface of the wafer to be cleaned, and the program control circuit is configured to cause the wafer to be cleaned to move in synchronization with the operation of the automatic transfer machine. A silicon wafer cleaning apparatus comprising: a control means for supplying cleaning liquid to the shower means at fixed positions of the cleaning tank and the water washing tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246972A JP2906156B2 (en) | 1989-09-22 | 1989-09-22 | Silicon wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1246972A JP2906156B2 (en) | 1989-09-22 | 1989-09-22 | Silicon wafer cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03108717A true JPH03108717A (en) | 1991-05-08 |
| JP2906156B2 JP2906156B2 (en) | 1999-06-14 |
Family
ID=17156464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1246972A Expired - Fee Related JP2906156B2 (en) | 1989-09-22 | 1989-09-22 | Silicon wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2906156B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100529389B1 (en) * | 1999-06-22 | 2005-11-17 | 주식회사 하이닉스반도체 | Method for operating scrubber used in manufacturing semiconductor |
| CN101876811A (en) * | 2009-04-28 | 2010-11-03 | 无锡华润上华半导体有限公司 | Timing control device |
| CN102626696A (en) * | 2012-05-07 | 2012-08-08 | 江苏合海机械制造有限公司 | Hanging-type cleaning machine |
| CN103769380A (en) * | 2014-02-13 | 2014-05-07 | 江苏博众汽车部件有限公司 | Aluminium alloy multiple-effect washing machine |
| CN107900022A (en) * | 2017-11-27 | 2018-04-13 | 珠海东锦石英科技有限公司 | Quartz wafer ground and cleaned machine and its ground and cleaned technique |
| CN114769164A (en) * | 2022-04-14 | 2022-07-22 | 深圳可孚生物科技有限公司 | Automatic change sensor screening check out test set |
| CN116078733A (en) * | 2023-02-10 | 2023-05-09 | 中环领先半导体材料有限公司 | Novel prevent silicon chip sintering's spray set |
| WO2023241733A1 (en) * | 2022-06-14 | 2023-12-21 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Liquid storage tanks and cleaners including the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5020571A (en) * | 1973-05-21 | 1975-03-04 | ||
| JPS5931039A (en) * | 1982-11-15 | 1984-02-18 | Toshiba Corp | Conveyor of semiconductor wafer and operation thereof |
-
1989
- 1989-09-22 JP JP1246972A patent/JP2906156B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5020571A (en) * | 1973-05-21 | 1975-03-04 | ||
| JPS5931039A (en) * | 1982-11-15 | 1984-02-18 | Toshiba Corp | Conveyor of semiconductor wafer and operation thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100529389B1 (en) * | 1999-06-22 | 2005-11-17 | 주식회사 하이닉스반도체 | Method for operating scrubber used in manufacturing semiconductor |
| CN101876811A (en) * | 2009-04-28 | 2010-11-03 | 无锡华润上华半导体有限公司 | Timing control device |
| CN102626696A (en) * | 2012-05-07 | 2012-08-08 | 江苏合海机械制造有限公司 | Hanging-type cleaning machine |
| CN103769380A (en) * | 2014-02-13 | 2014-05-07 | 江苏博众汽车部件有限公司 | Aluminium alloy multiple-effect washing machine |
| CN107900022A (en) * | 2017-11-27 | 2018-04-13 | 珠海东锦石英科技有限公司 | Quartz wafer ground and cleaned machine and its ground and cleaned technique |
| CN114769164A (en) * | 2022-04-14 | 2022-07-22 | 深圳可孚生物科技有限公司 | Automatic change sensor screening check out test set |
| CN114769164B (en) * | 2022-04-14 | 2023-06-09 | 深圳可孚生物科技有限公司 | Automatic change sensor screening check out test set |
| WO2023241733A1 (en) * | 2022-06-14 | 2023-12-21 | Tcl Zhonghuan Renewable Energy Technology Co., Ltd. | Liquid storage tanks and cleaners including the same |
| CN116078733A (en) * | 2023-02-10 | 2023-05-09 | 中环领先半导体材料有限公司 | Novel prevent silicon chip sintering's spray set |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2906156B2 (en) | 1999-06-14 |
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