JPH0310298B2 - - Google Patents

Info

Publication number
JPH0310298B2
JPH0310298B2 JP60034890A JP3489085A JPH0310298B2 JP H0310298 B2 JPH0310298 B2 JP H0310298B2 JP 60034890 A JP60034890 A JP 60034890A JP 3489085 A JP3489085 A JP 3489085A JP H0310298 B2 JPH0310298 B2 JP H0310298B2
Authority
JP
Japan
Prior art keywords
sensitivity
resist
akα
molecular weight
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60034890A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61194439A (ja
Inventor
Nobuyuki Yoshioka
Yoshiki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60034890A priority Critical patent/JPS61194439A/ja
Publication of JPS61194439A publication Critical patent/JPS61194439A/ja
Publication of JPH0310298B2 publication Critical patent/JPH0310298B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP60034890A 1985-02-22 1985-02-22 パタ−ンの微細加工方法 Granted JPS61194439A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60034890A JPS61194439A (ja) 1985-02-22 1985-02-22 パタ−ンの微細加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60034890A JPS61194439A (ja) 1985-02-22 1985-02-22 パタ−ンの微細加工方法

Publications (2)

Publication Number Publication Date
JPS61194439A JPS61194439A (ja) 1986-08-28
JPH0310298B2 true JPH0310298B2 (https=) 1991-02-13

Family

ID=12426750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60034890A Granted JPS61194439A (ja) 1985-02-22 1985-02-22 パタ−ンの微細加工方法

Country Status (1)

Country Link
JP (1) JPS61194439A (https=)

Also Published As

Publication number Publication date
JPS61194439A (ja) 1986-08-28

Similar Documents

Publication Publication Date Title
US4286049A (en) Method of forming a negative resist pattern
US3987215A (en) Resist mask formation process
JPS60115222A (ja) 微細パタ−ン形成方法
WO1980001978A1 (en) Solid state devices by differential plasma etching of resists
JPS5949536A (ja) 微細パタ−ン形成方法
JPH0310298B2 (https=)
JPS5918637A (ja) 像パタ−ンの形成方法
JPH03132760A (ja) レジストパターンの形成方法
JPS6287954A (ja) パタ−ン形成法
US4746596A (en) Method for microfabrication of pattern on substrate using X-ray sensitive resist
JPH0310297B2 (https=)
JPS5979247A (ja) 遠紫外線または電子線感応用レジスト
JPH07196743A (ja) 放射線感光材料及びパターン形成方法
JPS6287955A (ja) パタ−ン形成法
Mladenov et al. General problems of high resolution lithography
Smith et al. X-ray lithography
JPS6399525A (ja) パタ−ン形成方法
JPH03182756A (ja) レジストパターンの形成方法
JPH0377986B2 (https=)
JPS60114857A (ja) 乾式現像用感光性組成物
Okada et al. Thorough investigations on the resolution of replicated resist patterns in conventional x-ray lithography
JPS6319821A (ja) パタ−ン形成方法およびパタ−ン転写装置
JP2618978B2 (ja) レジスト材料およびこのレジスト材料を使用するパターン形成方法
JPS58187923A (ja) 放射線感応性レジスト材を用いる微細加工法
Lane Resists for storage ring x-ray lithography

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

LAPS Cancellation because of no payment of annual fees