JPH0298112A - Manufacture of soft magnetic thin film - Google Patents

Manufacture of soft magnetic thin film

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Publication number
JPH0298112A
JPH0298112A JP24996488A JP24996488A JPH0298112A JP H0298112 A JPH0298112 A JP H0298112A JP 24996488 A JP24996488 A JP 24996488A JP 24996488 A JP24996488 A JP 24996488A JP H0298112 A JPH0298112 A JP H0298112A
Authority
JP
Japan
Prior art keywords
thin film
soft magnetic
magnetic
oxygen
magnetic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24996488A
Other languages
Japanese (ja)
Other versions
JP2775770B2 (en
Inventor
Junichi Honda
順一 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
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Filing date
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Publication of JPH0298112A publication Critical patent/JPH0298112A/en
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Expired - Fee Related legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To restrain the growth of crystal grains and realize low coercive force and high permeability easily by a method wherein, when a soft magnetic thin film is formed by a sputtering process, 2-30% of oxygen is periodically led in the sputtering atmosphere. CONSTITUTION:The oxygen partial pressure led in sputtering atmosphere is specified to be 3-20% of the whole atmospheric gas. That is, if the oxygen partial pressure does not exceed 3%, the magnetic characteristics can not be enhanced due to the less led-in amount of oxygen but if the oxygen partial pressure exceeds 20%, the effective permeability of soft magnetic thin film declines notably. Since the oxygen is only to be led periodically in the sputtering atmosphere, a laminated soft magnetic thin film formed in an atmosphere comprising either argon only or oxygen and argon suffices. Through these procedures, the constitution of device can be simplified by the restraint of crystal grain deposition, the enhancement of permeability and the formation of the soft magnetic thin film by the simple modulation of sputtering atmosphere.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気ヘッドのコア材料として使用されて有用
な軟磁性薄膜の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a soft magnetic thin film useful as a core material of a magnetic head.

[発明の概要] 本発明は、軟磁性g薄膜をスパッタリングにより成膜す
るに際し、適当な周期でスパック雰囲気中〔従来の技術
〕 例えばVTR(ビデオテープレコーダ)等の磁気記録再
生装置においては、記録信号の高密度化や高周波数化等
が進められており、この高記録密度化に対応して、磁気
記録媒体として磁性粉にFe。
[Summary of the Invention] The present invention provides a method for forming a soft magnetic g thin film by sputtering in a sputtering atmosphere at appropriate intervals. Increasing the density and frequency of signals is progressing, and in response to this increase in recording density, Fe is used in magnetic powder as a magnetic recording medium.

Co、Ni等の強磁性金属の粉末を用いた。いわゆるメ
タルテープや、強磁性金属材料を蒸着等の手法によりベ
ースフィルム上に直接被着した。いわゆる蒸着テープ等
が実用化されつつある。
Powders of ferromagnetic metals such as Co and Ni were used. A so-called metal tape or a ferromagnetic metal material was directly deposited on the base film by a method such as vapor deposition. So-called vapor deposition tapes and the like are being put into practical use.

この種の磁気記録媒体は高い保磁力を有するので、記録
再生に用いる磁気ヘッドのコア材料には、高飽和磁束密
度を有することが要求される。例えば、従来磁気ヘッド
のコア材料として多用されているフェライト材では、飽
和磁束密度が不足し、高保磁力化に対処することは難し
い。
Since this type of magnetic recording medium has a high coercive force, the core material of the magnetic head used for recording and reproducing is required to have a high saturation magnetic flux density. For example, ferrite materials, which have conventionally been widely used as core materials for magnetic heads, lack saturation magnetic flux density and are difficult to cope with increasing coercive force.

このため、従来これら高保磁力磁気記録媒体に対応する
ために、セラミックス等の非磁性基板やフェライト等の
磁性基板上に高飽和磁束密度を有する軟磁性膜を被着し
、これら軟石性膜同士を突き合わせて磁気ギャップを構
成するようにしたいわゆるメタルイン・ギャップ型の磁
気ヘッドや、軟磁性膜や導体薄膜を絶縁膜を介して多層
積層構造とした111g磁気ヘッド等が提案されている
For this reason, conventionally, in order to support these high coercive force magnetic recording media, soft magnetic films with high saturation magnetic flux density are deposited on non-magnetic substrates such as ceramics or magnetic substrates such as ferrite, and these soft magnetic films are bonded together. A so-called metal-in-gap type magnetic head in which magnetic heads are butted together to form a magnetic gap, and a 111g magnetic head in which a soft magnetic film or a conductive thin film has a multilayer structure with an insulating film interposed therebetween have been proposed.

上記メタルイン・ギャップ型の磁気ヘッドや薄膜磁気ヘ
ッドに用いられる軟磁性膜としては、熱的に安定で、か
つ高飽和磁束密度を有するFc−Al−3i系合金磁性
膜や、さらにこれを凌く軟磁気特性を示すFe−Ga−
3i系合金磁性膜が知られている。
The soft magnetic films used in the above-mentioned metal-in-gap magnetic heads and thin-film magnetic heads include Fc-Al-3i alloy magnetic films that are thermally stable and have a high saturation magnetic flux density, and even better. Fe-Ga- exhibits soft magnetic properties.
3i alloy magnetic films are known.

ところが、これら軟磁性Rりは高保磁力磁気記録媒体に
対応し得る磁束を得るためある程度の膜厚を必要とする
が、膜厚が厚くなるに従いうず電流)1失が増大し、結
晶粒の成長等も大きくなってしまう。このため、軟磁性
膜の磁気特性(例えば透磁率)が劣化し、結果的に磁気
ヘッドの再生出力の低下を招き高密度記録すなわち短波
長記録化が実現されない。
However, these soft magnetic radiators require a certain film thickness in order to obtain magnetic flux compatible with high coercive force magnetic recording media, but as the film thickness increases, eddy current (1) loss increases and crystal grain growth occurs. etc. will also become large. As a result, the magnetic properties (eg, magnetic permeability) of the soft magnetic film deteriorate, resulting in a reduction in the reproduction output of the magnetic head, making it impossible to achieve high-density recording, that is, short-wavelength recording.

一般に、うず電流損失や結晶粒の成長を防止して磁気特
性を改善する一つの手法として、軟磁性膜を絶縁膜や金
属膜を介して多層積層構造とすることが知られている。
Generally, it is known that one method of improving magnetic properties by preventing eddy current loss and crystal grain growth is to form a soft magnetic film into a multilayer structure with an insulating film or a metal film interposed therebetween.

しかしながら、軟磁性膜の一層当たりの膜厚が減少する
ことにより、積層体としての透&i率は回復するものの
、上記絶縁膜や金属膜はいずれも非磁性材であるため積
層膜全体としての見かけの飽和磁化が減少する。さらに
、上記非磁性材が磁気ギャンプと平行に位置する場合に
は、これら非磁性材が疑催ギャップとして動作し周波数
特性にうねりを生ずる。
However, although the permeability of the laminate is restored by decreasing the thickness of each layer of the soft magnetic film, the appearance of the laminate as a whole is The saturation magnetization of decreases. Furthermore, when the non-magnetic materials are located parallel to the magnetic gap, these non-magnetic materials act as a spurious gap, causing undulations in the frequency characteristics.

そこで本願出願人は、先に特願昭63−99507 号
明細書等に開示するように、磁性体たる酸化物磁性薄膜
と軟磁性膜11りを積層することにより、高透磁率を確
保しつつ、積層膜全体としての飽和磁束密度も向上させ
る軟磁性薄膜を提案している。
Therefore, as previously disclosed in Japanese Patent Application No. 63-99507, etc., the applicant of the present invention secured high magnetic permeability while laminating an oxide magnetic thin film as a magnetic material and a soft magnetic film 11. proposed a soft magnetic thin film that also improves the saturation magnetic flux density of the entire laminated film.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、上記軟Ml性薄膜と酸化物iff性薄11り
の積層構造とした軟磁性薄膜を形成するには、同一チャ
ンバー内に軟磁性薄膜をスパッタする合金ターゲットと
、酸化物磁性薄膜をスパッタする合金ターゲットの両方
を設置しなければならず装置構成が複雑化する。また、
軟磁性薄膜と酸化物磁性薄膜の両方をスパッタするため
に工程が煩雑となり、生産性の向上が図れない。
However, in order to form a soft magnetic thin film with a laminated structure of the above-mentioned soft Ml thin film and oxide thin film, an alloy target for sputtering the soft magnetic thin film and an oxide magnetic thin film are sputtered in the same chamber. Both alloy targets must be installed, which complicates the equipment configuration. Also,
Since both the soft magnetic thin film and the oxide magnetic thin film are sputtered, the process becomes complicated and productivity cannot be improved.

そこで本発明は、かかる従来の実情にS”Aみて提案さ
れたものであって、高飽和磁束密度を確保しつつ、低保
磁力化、高透磁率化を可能とし、装置構成が簡単でしか
も生産性に優れた軟磁性薄膜の製造方法を提供すること
を目的とするものである。
Therefore, the present invention has been proposed in consideration of the conventional situation, and makes it possible to achieve low coercive force and high magnetic permeability while ensuring high saturation magnetic flux density, and has a simple device configuration. The object of the present invention is to provide a method for manufacturing a soft magnetic thin film with excellent productivity.

〔課題を解決するための手段] 本発明者は、上述の目的を達成せんものと長期間に亘り
鋭意研究を重ねた結果、軟磁性薄膜を積層する際のスパ
ッタ雰囲気中に適当な周期で酸素を導入することが磁気
特性の改善に極めて有効であることを見出し本発明を完
成するに至ったものである。
[Means for Solving the Problem] As a result of extensive research over a long period of time in order to achieve the above-mentioned object, the present inventor discovered that oxygen is added at appropriate intervals to the sputtering atmosphere when laminating soft magnetic thin films. The present invention was completed based on the discovery that the introduction of the above is extremely effective in improving magnetic properties.

すなわち、本発明の軟磁性薄膜の製造方法は、軟磁性薄
膜をスパッタリングにより成膜するに際し、スパッタ雰
囲気中に3〜20%の酸素を周期的に導入することを特
徴とするものである。
That is, the method for producing a soft magnetic thin film of the present invention is characterized by periodically introducing 3 to 20% oxygen into the sputtering atmosphere when forming the soft magnetic thin film by sputtering.

対象となる軟磁性mHとしては、例えばFeGa−3i
系軟磁性薄膜が挙げられる。このFeGa−3i系軟磁
性薄膜に含まれるFe、GaSiの組成範囲としては、
Ga含有量が1〜23重量%、Siの含有量が9〜31
重量%、残部がFeであることが好ましい。すなわち、
上記Fe−Ga−3i系軟磁性薄膜を Fe、Ga、、S Ic (a、b、cは各成分の重量比を表す。)としたときに
、その組成範囲が 68≦a≦84 1≦b≦23 9≦C≦31 a+b+c=Io。
As the target soft magnetic mH, for example, FeGa-3i
Examples include soft magnetic thin films. The composition range of Fe and GaSi contained in this FeGa-3i soft magnetic thin film is as follows:
Ga content is 1-23% by weight, Si content is 9-31%
It is preferable that the balance by weight is Fe. That is,
When the above-mentioned Fe-Ga-3i-based soft magnetic thin film is Fe, Ga, SIc (a, b, c represent the weight ratio of each component), the composition range is 68≦a≦84 1≦ b≦23 9≦C≦31 a+b+c=Io.

であることが望ましい。上記GaやSiが少な過ぎても
、また逆に多すぎて゛も磁気特性が劣化してしまう。
It is desirable that If the amount of Ga or Si is too little, or too much, the magnetic properties will deteriorate.

また、上記Feの一部をCoで置換することも可能であ
る。上記Feの一部をCoで置換することにより、飽和
磁束密度を上げることができる。
Further, it is also possible to replace a part of the above Fe with Co. By replacing a portion of the Fe with Co, the saturation magnetic flux density can be increased.

このCoの置IAffiとしては、Feに対して0〜2
0重量%の範囲内とすることが好ましい。
The IAffi of this Co is 0 to 2 for Fe.
It is preferably within the range of 0% by weight.

さらに、上述のFe−Ga−3i系軟磁性薄膜には、耐
摩耗性や軟磁気特性を一層改善するために各種元素を添
加剤として加えてもよい。上記添加剤として使用される
元素としては、Ti  CrMn、Zr、Nb、Mo、
’「a、W、Ru、0sIr、Re、Ni、Pd、PL
、Hr、Vのうち1種または2種以上を組み合わせて0
.5〜6.0重量%の範囲で添加する。ずなわち上記添
加剤をMとし、Fe−C;a−5i系軟磁性薄膜を式%
式% (a、b、c、d、eは各成分の重量比を表す。)で表
したときに、その組成範囲が 6日≦a≦84 0≦b≦15 1≦C≦23 6≦d≦31 0.5 ≦e≦6.0 を満足することが望ましい。上記添加剤の添加量が所定
の範囲を越えると磁気特性を劣化してしまう。
Furthermore, various elements may be added as additives to the above-mentioned Fe-Ga-3i-based soft magnetic thin film in order to further improve wear resistance and soft magnetic properties. Elements used as the additives include Ti CrMn, Zr, Nb, Mo,
'a, W, Ru, 0sIr, Re, Ni, Pd, PL
, Hr, V or a combination of two or more 0
.. It is added in a range of 5 to 6.0% by weight. That is, the above additive is M, and the Fe-C; a-5i soft magnetic thin film is expressed by the formula %.
When expressed in formula % (a, b, c, d, e represent the weight ratio of each component), the composition range is 6 days≦a≦84 0≦b≦15 1≦C≦23 6≦ It is desirable to satisfy d≦31 0.5≦e≦6.0. If the amount of the additive added exceeds a predetermined range, the magnetic properties will deteriorate.

なお、上述した各組成式中、Gaの一部がAIV。In addition, in each composition formula mentioned above, a part of Ga is AIV.

で置換されていてもよく、またSiの一部がGeで置換
されていてもよい。
Alternatively, a part of Si may be substituted with Ge.

また、上記Fe−Ga−3i系軟磁性薄膜の他に、例え
ばFeを主成分とする結晶質系の強磁性体材L14も使
用することが可能である。具体的には、Fe−Af−3
i系軟[性7薄膜、Fe−Δβ系軟磁性薄膜、Fe−3
i系軟磁性薄膜、Fe−Aj!Ge系軟磁性系膜磁性薄
膜はこれら軟石性膜119のFeの一部をCoで置換し
た軟651 +’l薄j1り等が挙げられる。
In addition to the Fe-Ga-3i soft magnetic thin film described above, it is also possible to use, for example, a crystalline ferromagnetic material L14 containing Fe as a main component. Specifically, Fe-Af-3
i-based soft magnetic 7 thin film, Fe-Δβ-based soft magnetic thin film, Fe-3
i-based soft magnetic thin film, Fe-Aj! Examples of the Ge-based soft magnetic film include soft 651+'1 thin film in which a part of Fe in the soft stone film 119 is replaced with Co.

一方、スパッタ雰囲気中に導入する酸素分圧は、雰囲気
ガス全体の3〜20%とする。すなわち、上記酸素分圧
が3%以下であると、酸素の導入量が少なすぎるために
磁気特性の向上が図れない。
On the other hand, the oxygen partial pressure introduced into the sputtering atmosphere is set to 3 to 20% of the total atmospheric gas. That is, if the oxygen partial pressure is 3% or less, the amount of oxygen introduced is too small to improve the magnetic properties.

また、酸素分圧が20%を越えると軟磁性薄膜の実効透
磁率が著しく低下するからである。なお、上記酸素分圧
は磁気特性の向上を図る上から5〜10%であることが
より好ましい。
Furthermore, if the oxygen partial pressure exceeds 20%, the effective magnetic permeability of the soft magnetic thin film will drop significantly. Note that the oxygen partial pressure is more preferably 5 to 10% in order to improve magnetic properties.

上記スパッタ雰囲気としては、例えばアルゴンガスが使
用可能である。
For example, argon gas can be used as the sputtering atmosphere.

また、酸素を導入する周期としては、例えば、アルゴン
雰囲気中でスパッタされる膜厚が100人〜1μm程度
で、アルゴンと酸素よりなる雰囲気中でスパッタされる
膜厚が50人〜1μm程度であることが望ましい。さら
に、これらの雰囲気中でスパッタされる各層の積層数と
しては、それぞれ4層〜20層とすることが好ましい。
Further, as for the cycle of introducing oxygen, for example, the thickness of a film sputtered in an argon atmosphere is about 100 to 1 μm, and the thickness of a film sputtered in an atmosphere consisting of argon and oxygen is about 50 to 1 μm. This is desirable. Furthermore, the number of laminated layers sputtered in these atmospheres is preferably 4 to 20 layers.

上記スパッタ雰囲気中に導入する酸素は周期的に導入す
ればよいので、積層される軟磁性薄膜としては、アルゴ
ンのみよりなるスパッタ雰囲気と酸素とアルゴンよりな
るスパッタ雰囲気中で成膜された積層型の軟磁性薄膜の
みならず、常に酸素とアルゴンのみからなるスパッタ雰
囲気中で成膜された積層型の軟磁性7iJII!2であ
ってもよい。例えば、アルゴンと3%酸素よりなるスパ
ッタ雰囲気。
Since the oxygen introduced into the sputtering atmosphere can be introduced periodically, the laminated soft magnetic thin films can be formed in a sputtering atmosphere consisting only of argon or in a sputtering atmosphere consisting of oxygen and argon. Not only a soft magnetic thin film, but also a laminated soft magnetic 7iJII film always formed in a sputtering atmosphere consisting only of oxygen and argon! It may be 2. For example, a sputtering atmosphere consisting of argon and 3% oxygen.

アルゴンと15%酸素よりなるスパッタ雰囲気のような
場合が挙げられる。
An example is a sputtering atmosphere consisting of argon and 15% oxygen.

この場合、酸素分圧はそれぞれ3〜15%および8〜2
0%とすることが好ましく、しかもその酸素分圧の差が
5%となるようにすることが望ましい。
In this case, the oxygen partial pressures are 3-15% and 8-2, respectively.
It is preferable to set it to 0%, and moreover, it is desirable that the difference in oxygen partial pressure is set to 5%.

本発明方法により製造される軟磁性薄膜は、ヘッドコア
の突き合わせ面に軟磁性薄膜を介在させるいわゆるメタ
ルイン・ギヤツブ型金ての磁気ヘッドに適用可能である
。例えば、突き合わせ面が磁気ギャップと平行に形成さ
れてなる磁気へンドあるいは突き合わせ面が斜めに切り
欠かれ、この斜面に軟磁性薄膜が成膜され、これら斜め
膜同士の突き合わせ面に磁気ギャップが形成されてなる
磁気ヘッド等が挙げられる。
The soft magnetic thin film manufactured by the method of the present invention can be applied to a so-called metal-in-gear type magnetic head in which the soft magnetic thin film is interposed on the abutting surfaces of the head cores. For example, a magnetic head where the abutting surface is formed parallel to the magnetic gap, or the abutting surface is cut out diagonally, a soft magnetic thin film is deposited on this slope, and a magnetic gap is formed at the abutting surface between these diagonal films. Examples include magnetic heads made of

〔作用〕[Effect]

本発明においては、軟磁性薄膜をスバ、タリングにより
成膜する際に、該スパッタ雰囲気中に所定量の酸素を周
期的に導入しているので、結晶粒の成長が抑制でき、透
磁率が向上する。
In the present invention, when a soft magnetic thin film is formed by sputtering or taring, a predetermined amount of oxygen is periodically introduced into the sputtering atmosphere, which suppresses the growth of crystal grains and improves magnetic permeability. do.

また本発明においては、軟磁性薄膜同士の組成変調であ
り、非磁性部を含まないため、磁気ギャップに垂直な方
向に組成変調しても磁性膜中からの磁束のもれがなく疑
伯ギャップの発生が抑制される。
In addition, in the present invention, since the composition modulation is between soft magnetic thin films and does not include a non-magnetic part, there is no leakage of magnetic flux from the magnetic film even if the composition is modulated in the direction perpendicular to the magnetic gap. The occurrence of is suppressed.

また本発明においては、軟磁性薄膜の成膜が単にスパッ
タ雰囲気の変調により形成されるため、ターゲトの数を
増やす必要がない等、装置構成がつ 簡略化でき、しかも製造工程も簡略化される。
Furthermore, in the present invention, since the soft magnetic thin film is formed simply by modulating the sputtering atmosphere, there is no need to increase the number of targets, which simplifies the device configuration and also simplifies the manufacturing process. .

〔実施例] 以下、本発明を適用した具体的な実施例を説明するが、
本発明がこれら実施例に限定されるものではないことは
言うまでもない。
[Example] Specific examples to which the present invention is applied will be described below.
It goes without saying that the present invention is not limited to these examples.

ス1141 先ず、Fe、Gab Sic Run合金(&[l成は
原子%:a=62.5.b=10.5.c=19.d−
8)をターゲットとして用い、予め反応防止膜として4
5人4のptを成膜したフェライトコアブロックにアル
ゴン雰囲気中で上記組成の合金を0.5μm成膜した後
、上記アルゴン雰囲気中に10%の酸素を導入し、アル
ゴンと10%酸素からなるスパッタ雰囲気中でやはり上
記組成の合金を500人となるように成膜した。そして
、これらを繰り返しアルゴン雰囲気中で成膜した0、 
5μIn厚の膜が8層、該0.5μmTi−の膜の各層
の間にアルゴンと10%酸素からなるスパッタ雰囲気中
で成膜した500人厚0膜がそれぞれ入るように積層し
、全体の膜厚が4μmとなるようにスパッタリングした
First, Fe, Gab Sic Run alloy (&[l composition is atomic %: a = 62.5.b = 10.5.c = 19.d-
8) as a target, and 4) as a reaction prevention film in advance.
After forming a 0.5 μm film of an alloy having the above composition in an argon atmosphere on a ferrite core block on which 5 and 4 pts were formed, 10% oxygen was introduced into the argon atmosphere to form a film consisting of argon and 10% oxygen. An alloy having the above composition was also formed into a film in a sputtering atmosphere to a thickness of 500. Then, these steps were repeated to form a film in an argon atmosphere.
Eight layers of 5μIn thick films were stacked so that between each layer of the 0.5μm Ti film there was a 500mm thick film formed in a sputtering atmosphere consisting of argon and 10% oxygen. Sputtering was performed so that the thickness was 4 μm.

次いで、得られた積層膜に対して真空中550°Cでア
ニール処理を施した後、磁気特性を測定したところ、保
磁力は0.080e(エルステッド)。
Next, the resulting laminated film was annealed at 550°C in vacuum, and its magnetic properties were measured, and the coercive force was 0.080e (Oersted).

実効透磁率は4000〜5000(5Mllzでの値)
Effective magnetic permeability is 4000-5000 (value at 5Mllz)
.

飽和磁束密度はIIKGであった。The saturation magnetic flux density was IIKG.

なお、上記アニール処理の温度は、通常の磁気へ・ンド
のガラス融着が可能な値である。
Incidentally, the temperature of the above-mentioned annealing treatment is a value that allows glass fusing using normal magnetic bonding.

さらに、上記軟磁性薄膜を実際に磁気へンドのコア材と
して使用し、iN iff気ヘッドの再生出力を測定し
たところ、酸素を導入せずにスパッタリングした単層膜
の軟磁性薄膜を用いた磁気ヘッドの再生出力に比べld
B以上の向上が見られた。
Furthermore, when the above soft magnetic thin film was actually used as the core material of a magnetic head and the reproducing output of the iNiff magnetic head was measured, it was found that magnetic ld compared to the playback output of the head.
An improvement of B or higher was observed.

ル較班土 先の実施例1と同一のターゲットを用い、やはり予め反
応防止膜として45人4のptを成膜したフェライトコ
アブロックに、アルゴンと10%酸素からなるスパッタ
雰囲気中で前記組成からなる合金を4μm厚となるよう
に単層の軟磁性薄膜を成膜した。
Using the same target as in Example 1, a ferrite core block on which 45% of PT was deposited in advance as a reaction prevention film was coated with the above composition in a sputtering atmosphere consisting of argon and 10% oxygen. A single-layer soft magnetic thin film was formed to have a thickness of 4 μm.

そして、上記実施例1と同様に同一条件でアニール処理
を施した後、磁気特性を測定したところ、保磁力は約0
.70 e 、実効透磁率は約1200(5MIIzで
の値)、飽和6d束密度は約10.2 K Gであった
Then, after annealing under the same conditions as in Example 1, the magnetic properties were measured, and the coercive force was approximately 0.
.. 70 e, the effective permeability was about 1200 (value at 5 MIIz), and the saturated 6d flux density was about 10.2 K G.

此(石11 先の実施例1と同一のターゲットを用い、やはり予め反
応防止膜として45人4のptを成膜したフェライトコ
アブロックに、アルゴンのみからなるスパッタ雰囲気中
で前記組成からなる合金をやはり4μm厚となるように
単層の軟磁性薄膜を成膜した。
Using the same target as in Example 1, an alloy having the above composition was applied to a ferrite core block on which a PT of 45% was deposited in advance as a reaction prevention film in a sputtering atmosphere consisting only of argon. A single-layer soft magnetic thin film was also formed to have a thickness of 4 μm.

同様に、得られた軟磁性薄膜に対してアニール処理を施
した後、磁気特性を測定したところ、保磁力は1. O
Oe 、実効透磁率は約800(5MIIzでの値)、
飽和磁束密度はIIKGであった。
Similarly, after annealing the obtained soft magnetic thin film, the magnetic properties were measured, and the coercive force was 1. O
Oe, effective magnetic permeability is approximately 800 (value at 5 MIIz),
The saturation magnetic flux density was IIKG.

前記実施例1.比較例1.比較例2の磁気特性を第1表
にまとめた。
Said Example 1. Comparative example 1. The magnetic properties of Comparative Example 2 are summarized in Table 1.

以下余白 第1表 上記第1表かられかるように、アルゴン雰囲気中で成膜
した単層j1りは、保磁力5実効透磁率で大きく劣り、
また10%酸素を導入したアルゴン雰囲気中でスパッタ
リングした単層膜では、若干の保磁力の低下や実効透磁
率の向上が見られるものの、飽和磁束密度の低下が認め
られた。
As can be seen from Table 1 above, the single layer film formed in an argon atmosphere is significantly inferior in terms of coercive force 5 effective permeability,
Furthermore, in a single layer film sputtered in an argon atmosphere containing 10% oxygen, a slight decrease in coercive force and improvement in effective magnetic permeability were observed, but a decrease in saturation magnetic flux density was observed.

これに対して、アルゴン雰囲気中に酸素を周1す1的に
導入し、アルゴン雰囲気および、酸素を含むアルゴン雰
囲気中でそれぞれ成膜した+12の411層構造とする
と、飽和磁束密度の低下が起こらずに、極めて低い保磁
力が得られ、しかも極めて高い実効透磁率が得られる。
On the other hand, when oxygen is introduced into an argon atmosphere one by one, and a +12 411-layer structure is formed in an argon atmosphere and an argon atmosphere containing oxygen, the saturation magnetic flux density does not decrease. Therefore, an extremely low coercive force can be obtained without any problems, and an extremely high effective magnetic permeability can be obtained.

したがって、アルゴン雰囲気中に酸素を周期的に導入し
積層膜構造とすれば、低保磁力化、高透磁率が達成でき
、極めて軟磁気特性に優れた軟磁性薄膜が得られる。
Therefore, by periodically introducing oxygen into an argon atmosphere to form a laminated film structure, a low coercive force and high magnetic permeability can be achieved, and a soft magnetic thin film with extremely excellent soft magnetic properties can be obtained.

よって、本発明方法を適用した軟磁性薄膜を磁気へンド
のコア材料に使用すれば、出力の向上が図れ、高周波数
帯域まで出力の低下が少なく、より高保磁力磁気記録媒
体に対応可能となる。
Therefore, if the soft magnetic thin film to which the method of the present invention is applied is used as the core material of a magnetic head, the output can be improved, the output decreases less even in high frequency bands, and it can be used with higher coercive force magnetic recording media. .

さらに、上記軟磁性薄膜によれば、軟(R性薄膜同士の
組成変調であるゆえ非磁性元素を含まず、磁気ギャップ
に垂直な方向で組成変調してもメタル膜中からの磁束の
もれはなく疑似ギヤ、プとして動作することもない。
Furthermore, according to the soft magnetic thin film, since the composition is modulated between soft (R) thin films, it does not contain any non-magnetic elements, and even if the composition is modulated in the direction perpendicular to the magnetic gap, magnetic flux leaks from within the metal film. There is no pseudo gear, and it does not operate as a gear.

また、充分な磁束を確保するために軟磁性薄膜のnり厚
を厚くしても、スパッタ雰囲気中に酸素を導入している
ので結晶粒の成長が抑制され、!il性膜の磁気特性(
特に、透磁率)が劣化することはない。
Furthermore, even if the thickness of the soft magnetic thin film is increased to ensure sufficient magnetic flux, the growth of crystal grains is suppressed because oxygen is introduced into the sputtering atmosphere. Magnetic properties of il film (
In particular, the magnetic permeability does not deteriorate.

(発明の効果〕 以上の説明からも明らかなように、本発明方法によれば
、軟磁性薄膜を成膜する際のスパッタ雰囲気中に酸素を
周IUl的に導入しているので、結晶粒の成長が抑制で
き、低保磁力化3高i3磁率化が容易に達成できる。
(Effects of the Invention) As is clear from the above explanation, according to the method of the present invention, oxygen is introduced circumferentially into the sputtering atmosphere when forming a soft magnetic thin film. Growth can be suppressed, and low coercive force and high i3 magnetic rate can be easily achieved.

また、本発明方法を適用して得られる軟磁性薄膜は、非
磁性膜を介在させるものとは木質的に異なるため、高飽
和磁束密度が確保でき、しかも膜厚を厚くしても磁気特
性の劣化がない。また、651気ギヤンブに垂直な方向
で組成変調してもメタル膜中からの磁束のもれはなく、
疑似ギャップとして動作することもない。
In addition, since the soft magnetic thin film obtained by applying the method of the present invention is different in texture from the soft magnetic thin film that has a non-magnetic film interposed therebetween, it is possible to ensure a high saturation magnetic flux density, and the magnetic properties remain unchanged even when the film thickness is increased. No deterioration. In addition, even if the composition is modulated in the direction perpendicular to the 651 air gap, there is no leakage of magnetic flux from within the metal film.
It does not operate as a pseudo gap.

さらに本発明方法によれば、成膜がスパッタ雰囲気の変
調のみであるため、従来からのスパッタ装置が使用可能
で、しかも製造工程も容易となり生産性の向上が図れる
Further, according to the method of the present invention, since film formation is performed only by modulating the sputtering atmosphere, conventional sputtering equipment can be used, and the manufacturing process is simplified, leading to improved productivity.

したがって、本発明方法を適用して得られる軟磁性薄膜
を磁気ヘッドのコア材料に用いた場合、高周波数帯域ま
で高出力を示し、高保磁力磁気記録媒体に対して良好な
記録特性を示す。
Therefore, when a soft magnetic thin film obtained by applying the method of the present invention is used as a core material of a magnetic head, it exhibits high output up to a high frequency band and exhibits good recording characteristics for a high coercive force magnetic recording medium.

Claims (1)

【特許請求の範囲】  軟磁性薄膜をスパッタリングにより成膜するに際し、 スパッタ雰囲気中に3〜20%の酸素を周期的に導入す
ることを特徴とする軟磁性薄膜の製造方法。
[Scope of Claim] A method for producing a soft magnetic thin film, which comprises periodically introducing 3 to 20% oxygen into the sputtering atmosphere when forming the soft magnetic thin film by sputtering.
JP63249964A 1988-10-05 1988-10-05 Method for manufacturing soft magnetic thin film Expired - Fee Related JP2775770B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63249964A JP2775770B2 (en) 1988-10-05 1988-10-05 Method for manufacturing soft magnetic thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63249964A JP2775770B2 (en) 1988-10-05 1988-10-05 Method for manufacturing soft magnetic thin film

Publications (2)

Publication Number Publication Date
JPH0298112A true JPH0298112A (en) 1990-04-10
JP2775770B2 JP2775770B2 (en) 1998-07-16

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Country Link
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244028A (en) * 1993-01-15 1994-09-02 Internatl Business Mach Corp <Ibm> Magnetic laminar structure and manufacture thereof
WO1999061676A1 (en) * 1998-05-28 1999-12-02 Koninklijke Philips Electronics N.V. Method for manufacturing a multilayer film for using in a magnetic head for recording information
WO2019049386A1 (en) * 2017-09-11 2019-03-14 川崎重工業株式会社 Railway vehicle floor structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108725A (en) * 1979-02-14 1980-08-21 Fujitsu Ltd Method for manufacture of thin iron oxide film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55108725A (en) * 1979-02-14 1980-08-21 Fujitsu Ltd Method for manufacture of thin iron oxide film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244028A (en) * 1993-01-15 1994-09-02 Internatl Business Mach Corp <Ibm> Magnetic laminar structure and manufacture thereof
WO1999061676A1 (en) * 1998-05-28 1999-12-02 Koninklijke Philips Electronics N.V. Method for manufacturing a multilayer film for using in a magnetic head for recording information
US6217723B1 (en) 1998-05-28 2001-04-17 U.S. Philips Corporation Method of manufacturing a multilayer film
WO2019049386A1 (en) * 2017-09-11 2019-03-14 川崎重工業株式会社 Railway vehicle floor structure

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