JPH0297055A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a stress of expansion and contraction due to the heat of a sealing resin, which acts on semiconductor chip through a connecting terminal, to prevent the mechanical breakage of the chips and the like and to obtain a semiconductor device having an improved reliability by a method wherein the connecting terminal is provided in such a way that part of the connecting terminal is fixed on an insulating substrate. CONSTITUTION:In a semiconductor device; wherein an insulating substrate 1, a plurality of metallic electrodes 2a and 2b fixed on the substrate 1, a plurality of semiconductor chips 31a and 31b which are respectively fixed on the surface on one side of each of the electrodes 2a and 2b, and a connecting terminal 51, to which the surfaces on the other sides of the chips 31a and 31b on the electrodes 2a and 2b different from each other are connected directly or through auxiliary connecting components 41a and 41b, are provided and those circuit constituent parts are housed in an enclosure and are resin-sealed; the terminal 51 is provided in such a way that part of the terminal 51 is fixed on the substrate 1. For example, a connecting terminal 51 is fixed on an insulating substrate 1 between metallic electrodes 2a and 2b at its lower end and part of the terminal 51 is connected with auxiliary connecting leads 41a and 41b which are respectively fixed on diode chips 31a and 31b.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a composite semiconductor device such as a diode bridge used in various conversion devices such as an inverter device and a chopper device.

[Conventional technology]

As an example of such a semiconductor device, FIG. 5 shows the internal structure of an example of a diode bridge of the circuit shown in FIG. 4, and FIG. 6 shows an external view. FIG. 5(a) is a plan view, and FIG. 5(11)) is a side view seen from the left side of FIG. 5(a). Metal electrodes 2a, 2b are fixed on top, diode chips 31a, 32a, 33a are on metal electrode 2a, and diode chip 31b is on metal electrode 2b.
, 32b, and 33b are fixed to each other.

Chips 31a and 31b are connected to connection terminals 51 for AC input via auxiliary connection leads 41a and 41b fixed to these chips, respectively, and chips 32a and 32b are similarly fixed to these chips in correspondence with each other. Similarly, the chips 33a and 33b are connected to the corresponding auxiliary connection leads 43a and 43 through the auxiliary connection leads 42a and 42b (not shown), respectively, to the connection terminal 52.
b (not shown) to the connecting terminal 53 to form the circuit shown in FIG. lla and llb are external lead-out terminals for direct current output mounted on the metal electrodes 2a and 2b, respectively. Figure 6(a) is an external plan view;
6) are external side views, and the bottom portion of the circuit structure shown in FIG. 5 is housed in an outer frame (envelope) 9 made of resin and sealed with a sealing resin 10. External lead-out terminals 11a, llb
And one end of the connection terminal 51, 52, 53 is sealed with a sealing resin 10
It is pulled out to the outside and is used for connection with external circuits.

In the above example, the semiconductor chip (diode chip) and the connection terminal are connected via the auxiliary connection lead,
Both may be directly connected. Furthermore, the base may be omitted for attachment to the heat sink, and the insulating substrate itself may be used as the base for attachment.

[Problem to be solved by the invention]

As seen in FIG. 5, in the conventional semiconductor device, the connection terminals are simply supported by the semiconductor chip. Because the resin is sealed with such a configuration, when the sealing resin expands and contracts due to thermal cycles caused by the heat generated by the semiconductor chip when the semiconductor device is operated, all the stress generated at that time and applied to the connection terminals is absorbed. This causes problems such as mechanical destruction of the semiconductor chip as it acts on the semiconductor chip.

This invention solves the above-mentioned problems and prevents thermal expansion of the sealing resin that acts on the semiconductor chip through the connection terminal.
The purpose of the present invention is to provide a semiconductor device with improved reliability by reducing shrinkage stress and preventing mechanical breakage of semiconductor chips.

[Means to solve the problem]

In order to achieve the above object, the present invention includes an insulating substrate, a plurality of metal electrodes fixed on the substrate, and a plurality of semiconductor chips fixed on one side on each of the metal electrodes. , connection terminals that connect the other side of semiconductor chips on different metal electrodes directly or through auxiliary connection parts, and these circuit components are housed in an envelope and sealed with resin. In the semiconductor device, a part of the connection terminal is fixed on the insulating substrate. Furthermore, it is also desirable that the semiconductor device be configured such that a part of the connection terminal is fixed onto a metal electrode via an insulating block.

[Effect]

Since a part of the connection terminal is fixed to the insulating substrate or metal electrode, the stress applied to the connection terminal due to the thermal expansion and contraction of the sealing resin is dispersed between the insulating substrate or metal electrode and the semiconductor chip. The stress on will be alleviated.

〔Example〕

FIG. 1 shows the internal structure of an embodiment in which the invention is applied to the semiconductor device of the circuit shown in FIG. 4. Although FIG. 1(a) is a plan view, since the structure of each phase of the diode bridge is the same, only one phase is shown as a partial plan view, and FIG. 1(b) similarly shows a side view. The same parts as in the conventional example shown in FIG. 5 are given the same reference numerals. The metal electrodes 2a and 2b are fixed on the insulating substrate 1 fixed on the base 8, and the metal electrodes 2a and 2b are attached to the heat sink.
A diode chip 31a is fixed on the top with its anode side facing down, and a diode chip 31a is fixed on the metal electrode 2b.
1b is fixed with its cathode side facing down. Auxiliary connection leads 41a and 41b are fixed on the diode chips 31a and 31b, respectively.

The connecting terminal 51 is fixed at its lower end on the insulating substrate 1 between the metal electrodes 2a and 2b while being insulated and separated from these metal electrodes, and a part of the connecting terminal 51 extends over the diode chips 31a and 31b. and are connected to auxiliary connection leads 41a and 41b, respectively.

FIG. 2 shows a different embodiment of the invention.
FIG. 2(a) is a partial plan view of the internal structure, and FIG. 2(b) is a side view. The difference from the embodiment shown in FIG. 1 is that the lower end of the connection terminal 51 is fixed onto the metal electrodes 2a, 2b via an insulating block 61, and is connected to the auxiliary connection lead of each chip. This is similar to the embodiment shown in FIG.

FIG. 3 shows still another embodiment of the present invention, and shows a partial plan view of its internal structure. The difference from the embodiment shown in FIG. 1 is that auxiliary connection leads 41a, 41b
This is because the diode chips 31a, 31b and the lower end of the connection terminal 51 are directly connected using the thin auxiliary connection terminal 71, and the number of assembled parts can be reduced accordingly. Furthermore, by making the shape of this auxiliary connection terminal into a dogleg shape, even if there is a height difference between the diode chip and the connection terminal, or a dimensional error of the auxiliary connection terminal itself, the connection can be made by, for example, soldering. You can also get certain benefits. Note that FIG. 3 shows the embodiment shown in FIG. 1, that is, an example in which the connection terminal is fixed to an insulating substrate insulated and separated from the metal electrode under the diode chip. In this embodiment, the metal electrode 2a whose connecting terminal is common to that below the diode chip,
2b, this dogleg-shaped auxiliary connection terminal 71 is also effective in the same manner as described above.

The circuit components assembled in this way are placed in an envelope as in the conventional case and sealed with resin to obtain the semiconductor device of each embodiment having the same external shape as the conventional example shown in FIG. .

In the embodiments described above, a base is used for attachment to the heat sink, but this may be omitted and the insulating substrate itself may be used as the base for attachment.

〔Effect of the invention〕

According to this invention, one end of the connection terminal is not directly fixed and supported on the semiconductor chip, but a terminal structure in which a part of the connection terminal is also fixed and supported on the insulating substrate or metal electrode below the semiconductor chip. It becomes. Therefore, the stress applied to the connection terminal due to thermal expansion and contraction of the sealing resin is dispersed between the semiconductor chip and the insulating substrate or metal electrode, and the stress on the semiconductor chip is alleviated. As a result, it is possible to prevent damage to the semiconductor chip due to thermal cycling and fatigue of fixed parts such as soldering due to power cycling, and it is possible to obtain a semiconductor device with improved reliability.

[Brief explanation of the drawing]

1 and 2 show the internal structures of different embodiments of the semiconductor device according to the present invention, and (a) in each of FIGS. 1 and 2 is a partial plan view, and (a) in each of FIGS.
Each of the figures) is a side view. FIG. 3 is a partial plan view of the internal structure of yet another embodiment. FIG. 4 is a circuit diagram of an example of a semiconductor device. FIG. 5 shows the internal structure of a conventional example of a semiconductor device, with FIG. 5(a) being a plan view and FIG. 5(b) being a side view. FIG. 6 shows an example of the external appearance of a conventional example and an example of a semiconductor device, and FIG. 6(a) is a plan view, and FIGS. 6(a) and 6(b) are side views. 1 Insulating substrate, 2a, 2b Metal electrode, 9 Outer frame (envelope), 10 Sealing resin, 31a, 31b Diode chip (semiconductor chip), 41a, 41b Auxiliary connection lead, 51 Connection terminal, 61 Insulation block, 71 “V” shaped auxiliary connection terminal. (C1) No. Ko [Mi (1 (b) Fig. 2 (a) Fig. Fig. Fig. (b) Fig.

Claims (1)

[Claims] 1) An insulating substrate, a plurality of metal electrodes fixed on the substrate, a plurality of semiconductor chips fixed on one side on each of these metal electrodes, and the other side of the semiconductor chips on different metal electrodes directly or In a semiconductor device comprising connection terminals connected via auxiliary connection parts, and in which these circuit components are housed in an envelope and sealed with resin, a part of the connection terminals is fixed on the insulating substrate. A semiconductor device characterized by: