JPH0296373A - Switching element - Google Patents
Switching elementInfo
- Publication number
- JPH0296373A JPH0296373A JP63248142A JP24814288A JPH0296373A JP H0296373 A JPH0296373 A JP H0296373A JP 63248142 A JP63248142 A JP 63248142A JP 24814288 A JP24814288 A JP 24814288A JP H0296373 A JPH0296373 A JP H0296373A
- Authority
- JP
- Japan
- Prior art keywords
- film
- switching element
- silicon phthalocyanine
- polymer thin
- phthalocyanine polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 27
- JACPFCQFVIAGDN-UHFFFAOYSA-M sipc iv Chemical compound [OH-].[Si+4].CN(C)CCC[Si](C)(C)[O-].C=1C=CC=C(C(N=C2[N-]C(C3=CC=CC=C32)=N2)=N3)C=1C3=CC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 JACPFCQFVIAGDN-UHFFFAOYSA-M 0.000 claims abstract description 17
- 229920000642 polymer Polymers 0.000 claims abstract description 16
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 5
- 230000004044 response Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005442 molecular electronic Methods 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、スイッチング素子、特に、電圧印加により
電導度が変化する有機薄膜を利用したスイッチング素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a switching element, and particularly to a switching element using an organic thin film whose electrical conductivity changes with the application of a voltage.
従来の技術
有機薄膜を用いたスイッチング素子は、分子エレクトロ
ニクス分野への応用的観点から注目されている。従来、
上記のごときスイッチングを起こす有機物として、鉛フ
タロシアニン薄膜が電界によりオーダー・ディスオーダ
ー（ｏｒｄｅｒ−ｄｉｓｏｒｄｅｒ）転移を起こすこと
がフラウエンハイム（Ｆｒａｕｅｎｈｅｉｍ）らによっ
て報告されている。BACKGROUND OF THE INVENTION Switching elements using organic thin films are attracting attention from the viewpoint of application to the field of molecular electronics. Conventionally,
Frauenheim et al. have reported that, as an organic substance that causes the above switching, a lead phthalocyanine thin film undergoes an order-disorder transition in response to an electric field.
また、Ｃｕ−ＴＣＮＱ電荷移動錯体結晶薄膜が約１０４
Ｖ／ｃｍの電界強度で高抵抗状態から低抵抗状態へのス
イッチング現象を示すことがボテンバ−（Ｐ。In addition, the Cu-TCNQ charge transfer complex crystal thin film is about 104
Botenbur (P.
ｔｅｍｂｅｒ）らによって報告されている。tember) et al.
さらに、ＴＴＦ−クロラニル結晶は、常圧下において、
８０°に近傍で熱収縮により、中性−イオン性転移を示
すことがトランス（Ｔｏｒ ｒａｎｃｅ ）によって報
告され、８ ／ １０３Ｖ／ｃｍの電界強度でスイッチ
ング現象が起こることが知られている。Furthermore, TTF-chloranil crystals under normal pressure,
Torrance reported that a neutral-ionic transition occurs due to thermal contraction near 80°, and it is known that a switching phenomenon occurs at an electric field strength of 8/103 V/cm.
発明が解決しようとする課題
上記のように、スイッチング機能を有する有機薄膜につ
いては、少数のものしか報告されていないのが現状であ
り、これらの有機薄膜は、分子エレクトロニクス用デバ
イスとして使用するには、安定性などの点で間頂がある
。Problems to be Solved by the Invention As mentioned above, at present, only a small number of organic thin films with switching functions have been reported, and these organic thin films are not suitable for use as devices for molecular electronics. , there are differences in terms of stability, etc.
この発明は、上記事情に鑑み、安定性、時間応答性、繰
り返し特性に優れた、有機薄膜によるスイッチング素子
を提供することを課題とする。In view of the above circumstances, it is an object of the present invention to provide a switching element made of an organic thin film that has excellent stability, time response, and repeatability.
課題を解決するだめの手段
前記課題を解決するため、請求項１，２記載のスイッチ
ング素子は、電導度変化層がシリコンフタロシアニンポ
リマー薄膜からなっている。Means for Solving the Problems In order to solve the above problems, in the switching elements according to the first and second aspects, the conductivity change layer is made of a silicon phthalocyanine polymer thin film.
請求項２記載のスイッチング素子は、加えて、シリコン
フタロシアニンポリマー薄膜トして、真空蒸着法により
形成されたものを用いるようにしている。In addition, the switching element according to the second aspect uses a silicon phthalocyanine polymer thin film formed by a vacuum evaporation method.
作 用
スイッチング素子における′成導度変化層がシリコンフ
タロシアニンポリマー薄膜からなると、安定性、時間応
答性、繰り返し特性の点で優れたスイッチング特性を示
すようになる。When the conductivity variable layer in the operational switching element is made of a silicon phthalocyanine polymer thin film, it exhibits excellent switching characteristics in terms of stability, time response, and repeatability.
シリコンフタロシアニンポリマー薄膜が真空蒸着法で形
成されていると、安定性、時間応答性、繰り返し特性の
点でより優れたスイッチング特性を示すようになる。When a silicon phthalocyanine polymer thin film is formed by vacuum evaporation, it exhibits better switching characteristics in terms of stability, time response, and repeatability.
実施例
μ下、この発明にかかるスイッチング素子を、その−例
にもとづいて詳しく説明する。EXAMPLE μ Below, the switching element according to the present invention will be explained in detail based on an example thereof.
この発明のスイッチング素子における上記シリコンフタ
ロシアニンポリマー薄膜は、例えば、μ下のようにして
作ることができる。The silicon phthalocyanine polymer thin film in the switching element of the present invention can be made, for example, as shown below.
フタロシアニナトシリコンジクロライドを蒸着原料とし
て真空蒸着法により形成した薄膜を、水分存在下で加熱
処理することによりシリコンフタロシアニンポリマーの
薄膜を形成することができる。水分存在条件下での加熱
処理方法としては、共蒸着法によるものや、吸湿性の基
板を用いたり、基板の表面処理を行うなどして、蒸着膜
形成時に既に、水分を含むようにしておいて０口熱する
方法と、蒸着膜形成時点では水分を含まず、水分を含む
雰囲気で加熱するようにし加熱時に始めて水分を導入す
る方法等がある。A thin film of silicon phthalocyanine polymer can be formed by heating a thin film formed by a vacuum evaporation method using phthalocyaninatosilicon dichloride as a deposition raw material in the presence of moisture. Heat treatment methods in the presence of moisture include co-evaporation, using a hygroscopic substrate, or surface treatment of the substrate so that it already contains moisture at the time of forming the vapor-deposited film. There are two methods: a method of applying heat from the mouth, and a method of heating in an atmosphere that does not contain moisture at the time of forming the vapor-deposited film and introducing moisture only during heating.
続いて、より具体的な実施例の説明を行う。Next, a more specific example will be explained.
まず、石英ガラスに下電極用のＡｕ（金）薄膜を蒸着し
た基板を準備する。一方、フタロシアニナトシリコンジ
クロライドを石英るつぼに入れ、１０″ｔｏｒｒ台の真
空中、４００℃の温度条件下で、上記基板の下電極上に
厚み約１μｍの薄膜を形成した〇この薄膜を１Ｏ−３ｔ
ｏｒｒ台の真空中で３６０℃、 ３時間加熱処理を行い
、加水分解、脱水重合させて、シリコンフタロシアニン
ポリマー薄膜を形成した。First, a substrate is prepared in which a thin Au (gold) film for a lower electrode is deposited on quartz glass. On the other hand, phthalocyaninatosilicon dichloride was placed in a quartz crucible, and a thin film with a thickness of about 1 μm was formed on the lower electrode of the substrate in a vacuum of 10"torr and at a temperature of 400°C. 3t
Heat treatment was carried out at 360° C. for 3 hours in a vacuum on an ORR table to cause hydrolysis and dehydration polymerization to form a silicon phthalocyanine polymer thin film.
ついで、このシリコンフタロシアニンポリマー薄膜の上
に上電極用のＡｕ（金）薄膜を蒸着し、スイッチング素
子を完成した。Next, a thin Au (gold) film for an upper electrode was deposited on this silicon phthalocyanine polymer thin film to complete a switching element.
このようにして作成したスイッチング素子の印加電場−
電流特性を図に示す。Applied electric field of the switching element created in this way -
The current characteristics are shown in the figure.
上下電極間の印加電圧を徐々に高くしていくとまず第１
の閾値電場Ｖ ｔｈｒ ＝ ３．５ Ｘ １０３Ｖ／ｃ
ｍを境として電導度が４．８５ Ｘ １０ ” Ｓ ／
ｃｍから１．８５Ｘ１０” Ｓ ／（ｍへとステップ
的に変化しスイッチング動作が起きた（Ａ→Ｂ）ｏさら
に、印加電圧を高くしていくと、第２の閾値電場Ｖ ｔ
ｈｚ ＝ ６．ＯＸｌ ０３Ｖ ／ｃｍを境として、電
導度が１．８５ Ｘ １０−１０から７．７５Ｘ１０”
Ｓ／ｃｍへとさらにステップ的に変化しスイッチング
動作が起きた（Ｃ→Ｄ ） ｏこのように、電導度が段
階的に変化しスイッチング動作するのである。なお、こ
の後、電圧を下げると、Ｄ−Ｅ間では、 ７．７５ Ｘ
１０ ” Ｓ／ｃｍの電導度がメモリー（保持）さ
れていた。When the voltage applied between the upper and lower electrodes is gradually increased, the first
Threshold electric field of V thr = 3.5 x 103V/c
The conductivity is 4.85 x 10”S/
cm to 1.85X10" S/(m, and a switching operation occurred (A→B)). Furthermore, as the applied voltage was increased, the second threshold electric field V t
hz = 6. Conductivity ranges from 1.85 X 10-10 to 7.75
The conductivity further changes stepwise to S/cm and a switching operation occurs (C→D). In this way, the conductivity changes stepwise and a switching operation occurs. Note that after this, when the voltage is lowered, between D and E, 7.75
A conductivity of 10'' S/cm was memorized.
スイッチング素子は、図にみるように、電圧を印加する
向きを逆にしても、スイッチング動作する。まず第３の
閾１直電場ｖ ｔｈｉ を境として電導度がステップ
的に変化しスイッチング動作が起きた（ Ａ’→Ｂ′）
０ さらに、印加電圧を強くしていくと、第４の聞直
電場ｖ ｔｈｚ ’ を境として、電導度がステップ
的に変化しスイッチング動作が起きた（Ｃ′→Ｄ’ ）
。なお、この後、電圧を弱めると、Ｄ’−ｚ’間では２
度目のスイッチング動作状態がメモリー（保持）されて
いた。As shown in the figure, the switching element performs a switching operation even if the direction of voltage application is reversed. First, the conductivity changed stepwise after the third threshold 1 direct electric field v thi and a switching operation occurred (A'→B')
0 Furthermore, as the applied voltage was increased, the conductivity changed in a stepwise manner with the fourth direct electric field v thz ' as a boundary, and a switching operation occurred (C'→D')
. Note that after this, when the voltage is weakened, 2 between D' and z'
The state of the first switching operation was stored in memory (retained).
また、この発明のスイッチング素子は、スイッチング動
作状態における抵抗直がいつも殆ど同じ程度の直に安定
していることも確認した。It has also been confirmed that the switching element of the present invention has a stable resistance value that is always almost the same in the switching operation state.
時間応答性に関しては、鉛フタロシアニンの場合（１０
０秒程度）に比べて、この発明のスイッチング素子では
、１秒程度と２桁程向上していることが確認された。Regarding time response, in the case of lead phthalocyanine (10
It was confirmed that the switching element of the present invention has a two-digit improvement of about 1 second, compared to about 0 seconds).
そして、この発明のスイッチング素子を１００回繰り返
し動作させても正常に動作したことから、繰り返し特性
も十分であることが確認された。Furthermore, since the switching element of the present invention operated normally even after being operated repeatedly 100 times, it was confirmed that the repeatability was also sufficient.
なお、真空蒸着法によれば、十分なシリコンフタロシア
ニンポリマー膜を容易に作ることができるが、この膜形
成は他の方法によって行うようにしてもよい。Note that although a sufficient silicon phthalocyanine polymer film can be easily formed by vacuum evaporation, this film formation may be performed by other methods.
この発明は上記実施例に限らない。例えば、上下電極が
全以外の材料で形成されていてもよい。This invention is not limited to the above embodiments. For example, the upper and lower electrodes may be made of a material other than all.
発明の効果
以上述べたように、請求項１，２記載のスイッチング素
子は、電導度変化層がシリコンフタロシアニンポリマー
薄膜であるため、安定性１時間応答性、繰り返し特性の
点で優れたスイッチング特性となっている。Effects of the Invention As described above, the switching element according to claims 1 and 2 has excellent switching characteristics in terms of stability, one-hour response, and repeatability, since the conductivity change layer is a silicon phthalocyanine polymer thin film. It has become.
請求項２記載のスイッチング素子は、シリコンフタロシ
アニンポリマー薄膜が真空蒸着法で形成されているため
、製造が容易である。The switching element according to the second aspect is easy to manufacture because the silicon phthalocyanine polymer thin film is formed by a vacuum deposition method.
図は、この発明にかかるスイッチング素子における印加
重湯と素子を流れる′電流の関係をあられすグラフであ
る〇
ｖｔｈ、・・・第１の閾［直電場、ｖｔｈ２．、、第２
の閾値電場、 ｖｔｈｌ’・・・第３の閾値電場、ｖ
ｔｈ２ ’・・・第４の閾［直電場。The figure is a graph showing the relationship between the applied load and the current flowing through the switching element according to the present invention. ,,second
Threshold electric field, vthl'...Third threshold electric field, v
th2'...Fourth threshold [direct electric field.
Claims (2)
変化層とするスイッチング素子。(1) A switching element that uses a silicon phthalocyanine polymer thin film as a conductivity changing layer.
着法により形成されたものである請求項１記載のスイッ
チング素子。(2) The switching element according to claim 1, wherein the silicon phthalocyanine polymer thin film is formed by a vacuum evaporation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63248142A JPH0296373A (en) | 1988-09-30 | 1988-09-30 | Switching element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63248142A JPH0296373A (en) | 1988-09-30 | 1988-09-30 | Switching element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0296373A true JPH0296373A (en) | 1990-04-09 |
Family
ID=17173849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63248142A Pending JPH0296373A (en) | 1988-09-30 | 1988-09-30 | Switching element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0296373A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010015759A1 (en) | 2008-08-05 | 2010-02-11 | Renault S.A.S. | Structure for the forward part of a motor vehicle suitable for limiting the ingress of water into any water-sensitive part of the engine |
-
1988
- 1988-09-30 JP JP63248142A patent/JPH0296373A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010015759A1 (en) | 2008-08-05 | 2010-02-11 | Renault S.A.S. | Structure for the forward part of a motor vehicle suitable for limiting the ingress of water into any water-sensitive part of the engine |
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