JPH0291606A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPH0291606A JPH0291606A JP63245028A JP24502888A JPH0291606A JP H0291606 A JPH0291606 A JP H0291606A JP 63245028 A JP63245028 A JP 63245028A JP 24502888 A JP24502888 A JP 24502888A JP H0291606 A JPH0291606 A JP H0291606A
- Authority
- JP
- Japan
- Prior art keywords
- forsterite
- optical semiconductor
- container
- high melting
- melting solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008018 melting Effects 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 18
- 229910052839 forsterite Inorganic materials 0.000 claims abstract description 15
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract description 5
- 238000005219 brazing Methods 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光半導体装置に関し、特に気密封止型光半導体
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical semiconductor device, and more particularly to a hermetically sealed optical semiconductor device.
従来の気密封止型光半導体装置は、第４図に示す様、側
壁を通して光ファイバー３を導入した気密封止容器１の
内部底面に台座４を載置し、その上部にペルチェ素子５
を載置し、更にその上部に光半導体素子８を載置した金
属板９を載置しこれらを低融点ソルダーを用いて固定し
、光半導体素子と光ファイバーを光学的に結合する構造
となっていた。As shown in FIG. 4, a conventional hermetically sealed optical semiconductor device includes a pedestal 4 placed on the inner bottom surface of a hermetically sealed container 1 into which an optical fiber 3 is introduced through the side wall, and a Peltier element 5 mounted on the pedestal 4.
A metal plate 9 on which an optical semiconductor element 8 is placed is further placed on top of the metal plate 9, and these are fixed using a low melting point solder to optically couple the optical semiconductor element and the optical fiber. Ta.
上述した従来の気密封止型光半導体容器では、７０℃の
環境下で低融点ソルダーのクリープが生じる為、光半導
体素子を載置した金属板が位置ずれを起こし、光ファイ
バーと光半導体素子との間の結合が劣化するという欠点
がある。In the conventional hermetically sealed optical semiconductor container described above, creep of the low melting point solder occurs in an environment of 70°C, which causes the metal plate on which the optical semiconductor element is mounted to shift, causing the optical fiber and optical semiconductor element to become misaligned. The disadvantage is that the bond between them deteriorates.
本発明の光半導体装置は、気密封止された容器内の光半
導体素子を載置する金属板が、高融点ソルダーで金属片
が接着されなフォルステライトで構成される支持体の金
属片にレーザー溶接より接着支持されている構成になっ
ている。In the optical semiconductor device of the present invention, a metal plate on which an optical semiconductor element is mounted in a hermetically sealed container is bonded with a high melting point solder, and a metal piece of a support made of forsterite is bonded with a laser beam. The structure is adhesive supported rather than welded.
〔実施例１〕
次に、本発明の一実施例につき図面を参照して詳細に説
明する。[Example 1] Next, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の容器外観図、第２図はその
縦断面図である。FIG. 1 is an external view of a container according to an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view thereof.
第１図に示すように容器１は蓋２を抵抗溶接することに
より気密封止され、光ファイバー３が側壁を通して導入
されている。As shown in FIG. 1, a container 1 is hermetically sealed by resistance welding a lid 2, and an optical fiber 3 is introduced through the side wall.
容器内部は第２図に示すように、台座４を高融点ソルダ
ーで底面上にろう付し、その上部にベルチェ素子５を低
融点ソルダーで、フォルステライト６を高融点ソルダー
で接着する。フォルステライト上部には高融点ソルダー
で金属片７をろう付し、その上部に光半導体素子８を載
置した金属板９がレーザー溶接することにより支持され
る。ベルチェ素子５と金属板９の間は低融点ソルダーが
充填されている。尚、光半導体素子は、半導体レーザー
、発光ダイオード、フォトダイオード、アバンランシ・
フォトダイオード、光集積回路等、どのようなものでも
よい。Inside the container, as shown in FIG. 2, a pedestal 4 is brazed onto the bottom surface using a high melting point solder, and a Vertier element 5 is bonded to the top using a low melting point solder and a forsterite 6 is bonded using a high melting point solder. A metal piece 7 is brazed on top of the forsterite with a high melting point solder, and a metal plate 9 on which an optical semiconductor element 8 is mounted is supported by laser welding. The space between the Beltier element 5 and the metal plate 9 is filled with low melting point solder. Note that optical semiconductor devices include semiconductor lasers, light emitting diodes, photodiodes, and avalanches.
Any photodiode, optical integrated circuit, etc. may be used.
〔実施例２〕 第３図は本発明の実施例２の縦断面図である。[Example 2] FIG. 3 is a longitudinal sectional view of Example 2 of the present invention.
容器外観は実施例１とまったく同じであるが、容器内部
のフォルステライトの取付形態が異る。すわなち、容器
内部側壁と高融点ソルダーによってろう付したフォルス
テライト６とその側部に高融点ソルダーでろう付接着し
た金属片７によって、光半導体素子８を載置した金属板
９は支持（金属片にレーザー溶接されている）される。The external appearance of the container was exactly the same as in Example 1, but the mounting form of the forsterite inside the container was different. That is, the metal plate 9 on which the optical semiconductor element 8 is mounted is supported by the forsterite 6 which is brazed to the inner side wall of the container with a high melting point solder, and the metal piece 7 which is brazed and bonded to the side of the forsterite 6 with a high melting point solder. laser welded to a piece of metal).
この実施例ではベルチェ素子５からフォルステライトの
位置が離れているため、フォルステライトを通したベル
チェ素子の放熱による熱伝導を小さく押さえられる利点
がある。In this embodiment, since the forsterite is located far from the Beltier element 5, there is an advantage that the heat conduction due to the heat dissipation of the Beltier element through the forsterite can be kept small.
以上説明したように、本発明は光半導体素子を載置する
金属板を、金属板とレーザー溶接された金属片と、その
金属片と高融点ソルダーで接着されたフォルステライト
で構成される台で支持することにより、高温環境下での
金属板の位置ずれを防ぐことができる。更に、フォルス
テライトは熱抵抗が大きい為、高温環境下でも、容器外
部から金属板への熱伝導を小さく押さえることが可能で
あり、光素子の高温劣化を小さく押さえることができる
効果がある。As explained above, the present invention uses a stand consisting of a metal plate on which an optical semiconductor element is placed, a metal piece laser welded to the metal plate, and forsterite bonded to the metal piece with a high melting point solder. By supporting the metal plate, it is possible to prevent the metal plate from shifting in position in a high-temperature environment. Furthermore, since forsterite has a high thermal resistance, it is possible to suppress heat conduction from the outside of the container to the metal plate even in a high-temperature environment, which has the effect of suppressing high-temperature deterioration of optical elements.
第１図は本発明の実施例１の外観図、第２図は実施例１
の縦断面図、第３図は実施例２の縦断面図、第４図は従
来の光半導体装置の縦断面図である。
１・・・容器、２・・・蓋、３・・・光ファイバー、４
・・・台座、５・・・ベルチェ素子、６・・・フォルス
テライト、７・・・金属片、８・・・光半導体素子、９
・・・金属板。
」 （周Fig. 1 is an external view of Embodiment 1 of the present invention, Fig. 2 is Embodiment 1
3 is a longitudinal sectional view of Example 2, and FIG. 4 is a longitudinal sectional view of a conventional optical semiconductor device. 1... Container, 2... Lid, 3... Optical fiber, 4
... Pedestal, 5... Vertier element, 6... Forsterite, 7... Metal piece, 8... Optical semiconductor element, 9
...Metal plate. ” (Zhou
Claims (1)
板上に接着されて容器内に気密封止されている光半導体
装置において、容器内の光半導体素子を載置する金属板
が、高融点ソルダーで金属片が接着されたフォルステラ
イトで構成される支持体の前記金属片にレーザ溶接され
て支持されていることを特徴とする光半導体装置。In an optical semiconductor device in which an optical semiconductor element consisting of a light emitting element or a light receiving element is adhered to a metal plate and hermetically sealed inside a container, the metal plate on which the optical semiconductor element is placed inside the container is made of high melting point solder. An optical semiconductor device, characterized in that the device is supported by laser welding to the metal piece of a support made of forsterite to which a metal piece is bonded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245028A JPH0291606A (en) | 1988-09-28 | 1988-09-28 | Photosemiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245028A JPH0291606A (en) | 1988-09-28 | 1988-09-28 | Photosemiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0291606A true JPH0291606A (en) | 1990-03-30 |
Family
ID=17127505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63245028A Pending JPH0291606A (en) | 1988-09-28 | 1988-09-28 | Photosemiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0291606A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014519A2 (en) * | 1998-12-25 | 2000-06-28 | Nec Corporation | Semiconductor laser module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224730A (en) * | 1985-07-25 | 1987-02-02 | Toshiba Corp | Optical communication equipment |
-
1988
- 1988-09-28 JP JP63245028A patent/JPH0291606A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6224730A (en) * | 1985-07-25 | 1987-02-02 | Toshiba Corp | Optical communication equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1014519A2 (en) * | 1998-12-25 | 2000-06-28 | Nec Corporation | Semiconductor laser module |
| EP1014519A3 (en) * | 1998-12-25 | 2000-11-08 | Nec Corporation | Semiconductor laser module |
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