JPH0290631A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent unnecessary resin from remaining on the side of a semiconductor device by allowing the resin to adhere on heat-proof sheets by a method wherein the heat-proof sheets, having almost same shape as cavities, are inserted between the dies, on which a gate and an air vent are formed, and the semiconductor device side. CONSTITUTION:Heat-proof sheets 6 and 7, having the holes 6a and 7a formed almost in the same shape as the cavities 4a and 5a formed on the upper die 4 and the lower die 5, are arranged in such a manner that their holes 6a and 7a are located on the same position as the cavities 4a and 5a. Besides, a gate 8 is provided on the surface of the side of the lower metal mold 5, namely, on the surface of the side of a TAB substrate 3, and an air vent 9 is provided on the side of the TAB substrate 3 of the upper die 4 respectively. Then, epoxy resin 10 is implanted into the cavities 4a and 5a from the gate 8. The upper die 4 and the lower die 5 are removed, and when the heat-proof sheets 6 and 7 on the upper and the lower surfaces are removed, and as the resin pieces 10a and 10b left on the gate 8 and the air vent 9 are adhered to the heat-proof sheets 6 and 7 respectively, the resin can be removed easily. Accordingly, the removal of unnecessary resin from the TAB substrate is unnecessary.

Description

[Detailed description of the invention] Industrial applications The present invention relates to a method for manufacturing a semiconductor device.

Conventional technology In recent years, there has been a demand for ultra-thin and ultra-small semiconductor devices for IC cards, memory cards, and auxiliary devices, and wire bonding is used to manufacture extremely large numbers of external drawer leads of about 200 pins. Due to the difficulty of the TAB method, the need for semiconductor devices based on the TAB method has increased.

The method for manufacturing semiconductor devices using the TAB method is to deposit Au onto the bonding pads, which are external lead electrodes of individual semiconductor elements formed on a wafer, through a barrier metal layer such as Ti or Cr, using a plating method. While providing bumps and dividing each into 40 semiconductor elements, the middle 35111II
A circuit is formed by etching a 35-thick Cu foil pasted on a polyimide film with a thickness of 125 prn and having predetermined holes, and plating the Cu circuit with Sn or 9. After performing rebonding, the predetermined position of the Cu circuit on the substrate and the pump of the semiconductor element are placed facing each other, and pressure and heat are applied.
In the conventional manufacturing method, the semiconductor element is completed through a sealing process of dropping epoxy resin onto the surface of the semiconductor element, an electrical characteristic testing process, etc. In the soil method, where the resin is dropped, the degree of spreading varies depending on the slight difference in viscosity, and the shape of the resin does not remain constant when it hardens.

In addition, since the peripheral area of the semiconductor element is not coated with sufficient resin, the junction between the tAu pans formed on the semiconductor element and the Cu circuit on the TAB substrate, and the Cu circuit exposed to the outside of the dropped epoxy resin. Due to the extremely short distance between the two semiconductor devices, the temperature resistance and other reliability of the completed semiconductor device was poor, and the semiconductor device that was completed had a stable sealing shape and high reliability. A sealing method by molding is being considered, and Fig. 2(a) and Tb
) A conventional method of sealing Tofunsfer will be described with reference to T-T.

FIG. 2 (Al shows the state in which the sealing mold is filled with epoxy resin and transfer molding is completed.

That is, the semiconductor element 21 is made of polyimide film 22.
The upper Cu circuit 23 is bonded via the Au bump 24t, and the TAB substrate 25 and the upper mold 26 are bonded.
In this method, the resin 30 is sandwiched between the lower mold 27 and pressurized and heated, and the melted resin 30 is pumped into the cavity 29 through the gate 28 formed in the lower mold 27, thereby performing resin sealing. by the way.

The air vent F31 formed in the lower mold 26 is the ninth one that discharges the air inside the cavity 9 when the resin is pumped.The gap is approximately 0.03 m, and a very small amount of resin usually leaks. It looks like this. Also,
FIG. 2 Tbl is a diagram showing the normal state after transfer molding is completed in FIG. 2 (at), the upper mold 26 and the lower mold 27 are opened, and the semiconductor device is removed.
The bottom surface of the AB substrate 25 has a resin 3 filled in the gate 28.
0a is still attached, and a very small amount of resin 30b that leaked into the air vent 31 is attached to the upper surface of the TAB board 25, and it is necessary to remove these unnecessary resins.

Problems to be Solved by the Invention In the conventional TAB method for manufacturing semiconductor devices, the gate resin 30a and the air vent 3
However, a very small amount of the resin 30b leaked from the TAB substrate 25 adheres to the TAB substrate 25, and it is necessary to remove it.

As mentioned above, the TAB substrate 25 is a thin sheet, and when unnecessary resin is removed, the TAB substrate 25 is deformed.

This poses a problem in that it may cause damage, resulting in a defective semiconductor device.

Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that can solve the above problems.

Means for Solving the Problems In order to solve the above problems, the method for manufacturing a semiconductor device of the present invention provides a semiconductor device manufacturing method according to the present invention, in which a semiconductor device is housed in a cavity of an upper mold and a lower mold, and then Molten resin is press-fitted into the cavity through a gate formed in one of the molds, and air in the cavity is extracted from an air vent formed in either the upper mold or the lower mold to release the resin of the semiconductor element. In this manufacturing method, when performing sealing, a heat-resistant sheet having a hole approximately the same shape as the cavity is inserted between the mold in which the gate and air vent are formed and the semiconductor device side.

Effect: According to the method for manufacturing a semiconductor device described above, unnecessary resin that is removed from the air vent and gate is attached to the heat-resistant sheet, and is not removed from the semiconductor device side.

EXAMPLE Below, a manufacturing method in an example of the present invention will be explained as shown in Fig. 1 (
al~(Explain based on cl.

First, as shown in FIG.
A heat-resistant sheet having the same shape as the projected shape of the sealing body, that is, holes 6a*7a formed in the upper and lower molds (see FIG. 1(b)) and having the same shape as the T cavities 4a+5a, respectively. ) 6.7t, arranged so that the holes 6a and 7a are in the same position as the cavities 4a and 5a. In addition,
A gate 8 is provided on the surface of the lower mold 5 facing the semiconductor device, that is, the surface facing the substrate 3, and an air vent 9 is provided on the surface of the upper mold 4 facing the TAB substrate 3. The heat-resistant sheet 6.7 preferably has a thickness of about 0.05w and is made of the same material as the TAB substrate 3.

Next, as shown in FIG. 1(b), the temperature is 170'C to 1
Heating to 80°C 1, using upper mold 4 and lower mold 5,
TAB board 3t - sandwich from above and below. Of course, the nine semiconductor elements l mounted on the TAB substrate 3 are placed in cavities 4a and 5a.
It is stored in the t state. Then, from the gate 8 into the cavity 4ae5a, epoxy resin 10
Inject at t-30 with a pressure of ~70μ.

In addition, when resin is injected, a very small amount of resin 10 also leaks out from the air vent 9 together with the air inside the cavities 4a and 5a.

After that, as shown in FIG. 1(C), the first mold 4 and the lower mold 5 are removed, and the heat-resistant sheets 6.7 on the upper and lower surfaces are also removed, remaining on the gate 8 and air vent 9. Since the resins 10a and 10b are attached to the heat-resistant sheet 6.7, they can be easily removed. Therefore, there is no need to remove unnecessary resin from the TAB substrate 3, and there is no risk of damaging the TAB substrate 3.

Incidentally, in the above embodiment, the TAB type is described, but even when applied to a semiconductor device using a metal glue film as a substrate, the same effect can be obtained.

Effects of the Invention As described above, 1. According to the method for manufacturing a semiconductor device of the present invention, unnecessary resin that is removed from the air vent and gate adheres to the heat-resistant sheet and is not removed from the semiconductor device side, so that unnecessary resin is not removed from the semiconductor device side as in the case of the conventional method. In the case of the TABTAB method, it is possible to eliminate deformation and damage on the semiconductor device side due to the removal of the resin, thereby improving the yield of semiconductor devices.
Gates and air vents can be arranged without being affected by the pattern formed on the TAB substrate, which also leads to an improvement in the yield of semiconductor devices.

[Brief explanation of the drawing]

FIGS. 1(a) to (cl) are cross-sectional views showing the manufacturing process of a semiconductor device according to an embodiment of the present invention, and FIGS. 2(a) to (b)
FIG. 1 is a cross-sectional view showing a manufacturing process of a semiconductor device according to a conventional example. 1... Semiconductor element, 2X... Au bump, 3...
TAB substrate, 4... upper mold, 4a... cavity,
5... Lower mold, 5a... Cavity, 6.7...
Heat resistant sea), 6a, 7a...hole, 8...gate, 9...air vent, 10...resin. Agent Yoshi Moriki Private use Figure 1 Figure 2 (Nno C ton)

Claims (1)

[Claims] 1. After storing semiconductor elements in the cavities of the upper mold and the lower mold, press-fitting molten resin into the cavities from the gate formed in either the upper mold or the lower mold, When sealing a semiconductor element with resin by removing air from the cavity from an air vent formed in either the upper mold or the lower mold, the mold in which the gate and air vent are formed and the semiconductor device side are removed. A method of manufacturing a semiconductor device, wherein a heat-resistant sheet having a hole having substantially the same shape as the cavity is inserted between the cavity and the cavity.