JPH0290550A - Package for semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to mount even an IC, which is requested a high speed and has a weak heat resistance, on a low-cost and highly reliable glass- sealed package by a method wherein a low-dielectric constant glass is used for a part related to IC characteristics and a low-melting point glass is used for sealing. CONSTITUTION:A package has a ceramic base, leads 2 arranged on the base 1, a low-dielectric constant glass material A formed along the outer periphery of the base 1 encircling the leads, an isolation frame 6 provided on the glass material A, a low-melting point glass material B formed on the isolation frame and a cap 5 sealed through the glass material B. For decreasing the capacities between the leads 2 at the time of pressure bonding of a lead frame of the base 1 to the leads 2, the low-dielectric constant glass material A3 is used even if the melting point of the glass material A3 is somewhat high. The glass material B4 is one for sealing the cap 5 in a case main body and has a melting point lower than that of the glass material A3. The base 1, the cap 5 and the isolation frame 6, whose material is identical with that of the cap 5, are comprised for preventing the material B4 from having an effect on the dielectric constant of the material A3.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device package sealed with glass, and particularly to a semiconductor device package suitable for mounting an ultra-high speed memory or logic IC.

[Conventional technology]

Traditionally, ceramic packages with glass sealing have been the mainstream as general-purpose packages for this type of high-speed ECL memory, as they are required to be highly airtight, have low thermal resistance, and be inexpensive because they are used in large quantities. Met. In order to reduce speed delays and signal waveform distortion as much as possible in such packages, consideration has been given to reducing the spacing between the leads, and glass materials with lower dielectric constants have been used.

[Problem to be solved by the invention]

The above-mentioned glass-sealed package is sealed at a higher temperature than the seam-weld type package, and therefore has the disadvantage that alloy spikes can destroy the junction in ultra-high-speed ICs having transistors with extremely shallow junctions.

On the other hand, adding various additives to obtain glass with a low melting point tends to increase the dielectric constant, and in order to seal with low dielectric constant glass to reduce the capacitance between leads, the sealing temperature must be lowered. The drawback is that you have no choice but to give up.

An object of the present invention is to provide an inexpensive and highly reliable glass-sealed semiconductor device package that can be mounted with a small lead-to-lead capacitance without destroying the junction even in an ultra-high-speed IC having a transistor with a shallow junction. It is in.

[Means to solve the problem]

A semiconductor device package of the present invention includes a ceramic base, a lead disposed on the ceramic base, a low dielectric constant glass material formed along the outer periphery of the ceramic base with the lead sandwiched therebetween, and the glass material. It has a separation frame provided on a material, a low melting point glass material formed on the separation frame, and a cap sealed via the glass material.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

FIGS. 1(a) and 1(b) show the DIP of the first embodiment of the present invention.
FIG. 3 is a plan view and a side view of the type.

The first embodiment, as shown in FIGS. 1(a) and (b),
First, in the package manufacturing stage, the leads 2 of the ceramic base 1 lead frame are crimped.In order to reduce the capacitance between the leads 2, we use a glass with a low dielectric constant, even though it has a slightly higher melting point. Material A3 is used. The glass material B4 is for sealing the cap 5 to the case body, and has a lower melting point than the glass material A3. The separation frame 6, which is made of the same material as the ceramic base 1 and the cap 5, is provided so that the glass material B4 does not affect the dielectric constant of the glass material A3.

FIGS. 2(a) and 2(b) are a plan view and a side view of a flat package according to a second embodiment of the present invention.

The second embodiment, as shown in FIGS. 2(a) and (b),
In a flat package, the leads 12 are exposed on all four sides, so the capacitance between the leads 12 is originally small compared to the DIR, but by using the embodiment, the spacing between the leads 12 can be narrowed, making the package more compact. It was useful.

〔Effect of the invention〕

As explained above, in the present invention, low dielectric constant glass is used for parts related to IC characteristics, and low melting point glass is used for sealing.
Even with C, there is an advantage that it can be mounted in an inexpensive and highly reliable glass sealed package.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) show the DIP of the first embodiment of the present invention.
FIGS. 2(a) and 2(b) are a plan view and a side view of a flat package according to a second embodiment of the present invention. 1.11...Ceramic base, 2,12...Lead, 3,13...Glass material A, 4,14...Glass material B, 5.15...Cap, 6.16... - Separation frame. (b) The side

Claims (1)

[Claims] A ceramic base, a lead placed on the ceramic base, a low dielectric constant glass material formed along the outer periphery of the ceramic base with the lead in between, and a separation frame provided on the glass material. A package for a semiconductor device, comprising: a low melting point glass material formed on the separation frame; and a cap sealed via the glass material.