JPH0286152U - - Google Patents

Info

Publication number
JPH0286152U
JPH0286152U JP16553788U JP16553788U JPH0286152U JP H0286152 U JPH0286152 U JP H0286152U JP 16553788 U JP16553788 U JP 16553788U JP 16553788 U JP16553788 U JP 16553788U JP H0286152 U JPH0286152 U JP H0286152U
Authority
JP
Japan
Prior art keywords
pressure sensor
diaphragm
semiconductor substrate
semiconductor
semiconductor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16553788U
Other languages
Japanese (ja)
Other versions
JPH073647Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP16553788U priority Critical patent/JPH073647Y2/en
Publication of JPH0286152U publication Critical patent/JPH0286152U/ja
Application granted granted Critical
Publication of JPH073647Y2 publication Critical patent/JPH073647Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す平面図、第2
図及び第3図は夫々同ダイヤフラムの長さ方向及
び幅方向の縦断側面図であり、第4図は従来例を
示す第1図相当図である。 図面中、11は半導体基板、12はダイヤフラ
ム、13は溝部、15は抵抗部を示す。
Fig. 1 is a plan view showing one embodiment of the present invention;
3 and 3 are longitudinal sectional side views of the same diaphragm in the length direction and width direction, respectively, and FIG. 4 is a view corresponding to FIG. 1 showing a conventional example. In the drawings, 11 is a semiconductor substrate, 12 is a diaphragm, 13 is a groove, and 15 is a resistor.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 面方位を110面とする矩形状の半導体基板に
長尺状をなす薄肉のダイヤフラムが形成されてな
る半導体圧力センサにおいて、前記ダイヤフラム
は前記半導体基板に対してその幅方向が軸方位<
111>方向に沿い且つ長さ方向が対角線上に沿
つて配置されていることを特徴とする半導体圧力
センサ。
In a semiconductor pressure sensor in which a thin elongated diaphragm is formed on a rectangular semiconductor substrate with a 110-plane orientation, the width direction of the diaphragm is in an axial direction with respect to the semiconductor substrate.
A semiconductor pressure sensor characterized in that it is arranged along the 111> direction and its length direction is diagonal.
JP16553788U 1988-12-21 1988-12-21 Semiconductor pressure sensor Expired - Lifetime JPH073647Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16553788U JPH073647Y2 (en) 1988-12-21 1988-12-21 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16553788U JPH073647Y2 (en) 1988-12-21 1988-12-21 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH0286152U true JPH0286152U (en) 1990-07-09
JPH073647Y2 JPH073647Y2 (en) 1995-01-30

Family

ID=31452113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16553788U Expired - Lifetime JPH073647Y2 (en) 1988-12-21 1988-12-21 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPH073647Y2 (en)

Also Published As

Publication number Publication date
JPH073647Y2 (en) 1995-01-30

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term