JPH0282033U - - Google Patents
Info
- Publication number
- JPH0282033U JPH0282033U JP16129388U JP16129388U JPH0282033U JP H0282033 U JPH0282033 U JP H0282033U JP 16129388 U JP16129388 U JP 16129388U JP 16129388 U JP16129388 U JP 16129388U JP H0282033 U JPH0282033 U JP H0282033U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer holding
- plate
- holding part
- polishing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims description 7
- 239000004744 fabric Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
Description
第1図は考案の実施例に係る研磨装置を示す概
略断面図、第2図は従来技術に係る研磨装置を示
す概略断面図である。
1:研磨布、2:定盤、2a:回転軸、3:ウ
エーハ、40:プレート。
FIG. 1 is a schematic sectional view showing a polishing apparatus according to an embodiment of the invention, and FIG. 2 is a schematic sectional view showing a polishing apparatus according to the prior art. 1: Polishing cloth, 2: Surface plate, 2a: Rotating shaft, 3: Wafer, 40: Plate.
Claims (1)
ウエーハと、定盤上に貼設されている研磨布とを
、研磨剤を流下させつつ加圧下に摺擦運動させな
がら前記ウエーハ表面を研磨可能にしたウエーハ
研磨装置において、プレートのウエーハ保持面を
僅かに凸曲面状に設定したことを特徴とするウエ
ーハ研磨装置。 2 前記プレートのウエーハ保持面が、ウエーハ
保持部中心域と、ウエーハ保持部周縁域との差が
1〜10μmの範囲に設定されている請求項1記
載のウエーハ研磨装置。 3 前記プレートのウエーハ保持面が、ウエーハ
保持部中心域よりウエーハ保持部周縁域に移行す
るに連れ徐々に曲率半径を小に設定し、その断面
形状を略楕円形状に近似した曲線からなるよう設
定された請求項1記載のウエーハ研磨装置。[Scope of Claim for Utility Model Registration] 1. A semiconductor wafer fixedly held on the lower surface of a plate and an abrasive cloth attached to a surface plate are subjected to a sliding movement under pressure while an abrasive is flowing down. A wafer polishing apparatus capable of polishing the wafer surface, wherein the wafer holding surface of the plate is set to have a slightly convex curved surface. 2. The wafer polishing apparatus according to claim 1, wherein the wafer holding surface of the plate has a difference between a central area of the wafer holding part and a peripheral area of the wafer holding part in a range of 1 to 10 μm. 3. The radius of curvature of the wafer holding surface of the plate is gradually made smaller as it moves from the central area of the wafer holding part to the peripheral area of the wafer holding part, and the cross-sectional shape is set to consist of a curved line approximating an approximately elliptical shape. The wafer polishing apparatus according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16129388U JPH0282033U (en) | 1988-12-14 | 1988-12-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16129388U JPH0282033U (en) | 1988-12-14 | 1988-12-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0282033U true JPH0282033U (en) | 1990-06-25 |
Family
ID=31444095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16129388U Pending JPH0282033U (en) | 1988-12-14 | 1988-12-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0282033U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS632655A (en) * | 1986-06-23 | 1988-01-07 | Furukawa Electric Co Ltd:The | Wafer polishing plate |
-
1988
- 1988-12-14 JP JP16129388U patent/JPH0282033U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS632655A (en) * | 1986-06-23 | 1988-01-07 | Furukawa Electric Co Ltd:The | Wafer polishing plate |