JPH0281482A - Gallium nitride-based compound semiconductor light-emitting element - Google Patents
Gallium nitride-based compound semiconductor light-emitting elementInfo
- Publication number
- JPH0281482A JPH0281482A JP63232885A JP23288588A JPH0281482A JP H0281482 A JPH0281482 A JP H0281482A JP 63232885 A JP63232885 A JP 63232885A JP 23288588 A JP23288588 A JP 23288588A JP H0281482 A JPH0281482 A JP H0281482A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- grown
- buffer layer
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 229910002601 GaN Inorganic materials 0.000 title claims description 17
- 150000001875 compounds Chemical class 0.000 title abstract description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title description 2
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- -1 gallium nitride compound Chemical class 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 56
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Abstract
Description
本発明は青色発光の窒化ガリウム系化合物半導体発光素
子に関する。The present invention relates to a gallium nitride compound semiconductor light emitting device that emits blue light.
従来、青色の発光ダイオードとしてＧａＮ系の化合物半
導体を用いたものが知られている。そのＧａＮ系の化合
物半導体は直接遷移であることから発光効率が高いこと
、光の３原色の１つである青色を発光色とすること等か
ら注目されている。
このようなＧａＮ系の化合物半導体を用いた発光ダイオ
ードは、サファイア基板上に直接又は漣化アルミニウム
から成るバッファ層を介在させて、Ｎ導電型のＧａＮ系
の化合物半導体から成るＮ層を成長させ、そのＮ層の上
に１導電型のＧａＮ系の化合物半導体から成る１層を成
長させた構造を二っている。ごして、Ｊ−の成長方法と
して、ハライド気相成長法、有機金属化合物気相成長法
（ＭＯＶＰＥ）が用いられている。Conventionally, blue light emitting diodes using GaN-based compound semiconductors are known. The GaN-based compound semiconductor is attracting attention because it has high luminous efficiency due to direct transition, and because it emits blue light, which is one of the three primary colors of light. A light emitting diode using such a GaN-based compound semiconductor is produced by growing an N layer made of an N-conductivity type GaN-based compound semiconductor on a sapphire substrate directly or with a buffer layer made of aluminum fluoride interposed therebetween. There is a structure in which one layer made of a GaN-based compound semiconductor of one conductivity type is grown on the N layer. As a method for growing J-, halide vapor phase epitaxy and organometallic compound vapor phase epitaxy (MOVPE) are used.
ところで、上記の発光ダイオードの性能は、活性層であ
る１層の結晶性にかかっている。その１層の結晶性はＮ
層の結晶性に依存している。そして、Ｎ層の結晶性を向
上させるために、結晶のミスフイツトを減少させる目的
でサファイア基板とＮ層間にバッファ層を介在させてい
る。このバッファ層の結晶性によりＮ層の結晶性が支配
される。
本発明者らは、かかる結晶成長について研究を重ねてき
た。その結果、次のことが判明された。
第１に、このバッファ層はＭＯＣＶＤ法により成長させ
ることから、成長温度を高くする必要があり、そのため
、ピットが生じ易く、そのことがＮ層の結晶性を阻害す
る。
第２に、Ｎ層の結晶性を向上させるには、バッファ層は
非常に薄い結晶成長の核が均一に分散していることが必
要である。しかし、そのことを阻止する原因として、Ｍ
ＯＣＶＤ法では、トリメチルアルミニウム（ＴＭＡ）と
アンモニア（ＮＨ，）の反応により窒化アルミニウム（
ＡＩＮ）を成長させる時に、メチル基、水素等の立体障
害がある。
第３に、発光ダイオードの特性上からは、Ｎ層や１層へ
のアルミニウム原子の拡散等を防止するためにもバッフ
ァ層の厚さは可能な限り簿い方が望ましい。
本発明は、このような結論を元に完成されたものであり
、その目的は、バッファ層を結晶成長の核を均一に分散
させたものとすることにより、Ｎ層及び１層の結晶性を
向上させることができ、更に発光ダイオードの発光特性
を向上させることである。By the way, the performance of the above-mentioned light emitting diode depends on the crystallinity of one layer, which is the active layer. The crystallinity of that one layer is N
It depends on the crystallinity of the layer. In order to improve the crystallinity of the N layer, a buffer layer is interposed between the sapphire substrate and the N layer in order to reduce crystal misfit. The crystallinity of the N layer is controlled by the crystallinity of this buffer layer. The present inventors have conducted repeated research on such crystal growth. As a result, the following was found. First, since this buffer layer is grown by the MOCVD method, it is necessary to raise the growth temperature, and therefore pits are likely to occur, which inhibits the crystallinity of the N layer. Second, in order to improve the crystallinity of the N layer, the buffer layer needs to have very thin crystal growth nuclei uniformly dispersed therein. However, M
In the OCVD method, aluminum nitride (NH) is produced by the reaction of trimethylaluminum (TMA) and ammonia (NH).
When growing AIN), there are steric hindrances such as methyl groups and hydrogen. Thirdly, from the viewpoint of the characteristics of the light emitting diode, it is desirable to keep the thickness of the buffer layer as small as possible in order to prevent diffusion of aluminum atoms into the N layer and the first layer. The present invention was completed based on this conclusion, and its purpose is to improve the crystallinity of the N layer and the first layer by making the buffer layer a layer in which crystal growth nuclei are uniformly dispersed. It is possible to improve the light emitting characteristics of the light emitting diode.
本発明は、本発明者らによって初めて明らかにされた上
記結論に立脚するものであり、本発明者らは、バッファ
層を分子線エピタキシー法（ＭＢＥ）で成長させれば望
ましい結果が得られることを初めて着想したのである。
即ち、上記課題を解決するだめの発明の構成は、サファ
イア基板と、サファイア基板上に成長した窒化アルミニ
ウム（Ａ Ｉ Ｎ）から成るバッファ層と、バッファ層
上に戊長したＮ型の窒化ガリウム系化合物半導体（Ａ
ｆ Ｘ Ｇ ａ Ｉ−ｘ Ｎ ； Ｘ＝Ｏを含む）から
なるＮ層と、Ｎ層上に成長したＩ型の窒化ガリウム系化
合物半導体（Ａ Ｉ Ｘ Ｇ ａ ｌ−Ｘ Ｎ ：ｘ−
Ｏを含む）からなる１層とを有し、バッファ層を分子線
エピタキシー法（ＭＢＥ）で成長させたことを特徴とす
るものである。The present invention is based on the above conclusion first clarified by the present inventors, and the present inventors have discovered that desired results can be obtained by growing the buffer layer by molecular beam epitaxy (MBE). It was the first time I had the idea. That is, the structure of the invention to solve the above problem is a sapphire substrate, a buffer layer made of aluminum nitride (AIN) grown on the sapphire substrate, and an elongated N-type gallium nitride-based layer grown on the buffer layer. Compound semiconductor (A
f X Ga I-x N ; containing X=O), and an I-type gallium nitride compound semiconductor (A
The buffer layer is grown by molecular beam epitaxy (MBE).
本発明は、サファイア基板上に戊長し、サファイアと窒
化ガリウム系化合物半導体との格子不整合を緩和する窒
化アルミニウムから成るバッファ層を分子線エピタキシ
ー法で成長させたので、窒〜
化アルミニウムの核を均一に薄く分散させることができ
、その上に成長させるＮ層及び１層の単結晶性を向上さ
せることができた。従って、発光ダイオードの発光特性
を向上させることができた。In the present invention, a buffer layer made of aluminum nitride is grown on a sapphire substrate by molecular beam epitaxy to alleviate the lattice mismatch between sapphire and a gallium nitride compound semiconductor. could be uniformly and thinly dispersed, and the single crystallinity of the N layer and the single layer grown thereon could be improved. Therefore, the light emitting characteristics of the light emitting diode could be improved.
以下、本発明を具体的な実施例に基づいて説明する。図
は本発明の具体的な一実施例に係る発光ダイオード１の
構成を示した断面図である。
主面を０面（（０００１）面）とするサファイア基板２
を硝酸で洗浄した後、更にアセトンで洗浄した。
そして、洗浄後、窒素ガスを吹き付けて乾怪させた後、
そのサファイア基板２をＭＢＥ装置のサセプタに取り付
けた。その後、サファイア基板２を５００℃に加熱して
、窒素ガスプラズマ中で、アルミニウムを蒸発させて、
サファイア基板２の主面上に窒化アルミニウム（ＡｌＮ
）から成るバッファ層３を約５００人の厚さに形成した
。
その後、このバッファ層３の形成されたサファイア基板
２をＭＢＥ装置からグラブボックスを通じて、そのサフ
ァイア基板２をＭＯＶＰＥ！置の反応室のサセプタに取
り付けた。そして、サファイア基板２を１０００℃に加
熱して、キャリアガスとしてＨ７を２，５１／分、ＮＨ
，をり、５１／分、トリメチルガリウム（ＴＭＧ）を２
０ｄ／分の割合で６０分間供給し、収厚約１０μｓのＮ
型のＧａＮから成る８層４を形成した。
次に、サファイア基板２を９００℃にして、Ｈ２を２．
５ｆ／分、ＮＨ，を１．５Ｉ！／分、ＴＭＧを１５ｒｎ
ｌ／分、ジエチル亜鉛（ＤＥＺ）を１０−３ｍ１／分の
割合で５分間供給して、■型のＧａＮから戊る１層５を
膜厚１．０−に形成した。
次に、８層４の側壁と１層５の上面にアルミニウム電極
６．７を蒸着して、発光ダイオードを形成した。
このようにして得られた発光ダイオード１の８層４及び
１層５の断面の顕微鏡写真、高エネルギー電子線による
反射回折法（ＲＨＩＥＥＤ）により、良好な結晶性が得
られていることが分かった。
又、この発光ダイオード１の発光ピークのスペクトルは
４８０ｎｍであり、発光強度（軸上輝度）は１０ｍｃｄ
であった。
尚、本発明者らの考察によれば、ＭＢＥで形成されたバ
ッファ層３では、８層４のＧａＮの成長の核が、バッフ
ァ層３をＭＯＶＰＥで成長させたものと比べて、均一に
分散し、そのために、８層４及び１層５の単結晶性が良
くなったと考えられる。
又、バッファ層３は、サファイア基板２を５００℃にし
てＭＢＥで形成したので、多結晶であった。
又、本発明者らは、バッファ層３は多結晶で成長させた
方が単結晶で成長させた方よりも、ＮＦ’４及び１層５
の単結晶性が良いことも見出した。
このためにもＭＢＥでバッファ層３を成長させることは
効果があり、多結晶とする成長温度は、室温〜５００℃
が望ましい。
又、８層４及び１層５の単結晶性を良くするためには、
バッファ層３の厚さは１００〜１０００人が望ましい。
尚、上記実施例では、８層４及び１層５をＧａＮで形成
したが、ＡｌｘＧａ＋−ｘＮで形成しても良い。The present invention will be described below based on specific examples. The figure is a sectional view showing the structure of a light emitting diode 1 according to a specific embodiment of the present invention. Sapphire substrate 2 whose main surface is the 0 plane ((0001) plane)
was washed with nitric acid and then further washed with acetone. After cleaning and drying by blowing nitrogen gas,
The sapphire substrate 2 was attached to a susceptor of an MBE apparatus. After that, the sapphire substrate 2 is heated to 500°C to evaporate aluminum in nitrogen gas plasma,
Aluminum nitride (AlN
) was formed to a thickness of approximately 500 mm. Thereafter, the sapphire substrate 2 with the buffer layer 3 formed thereon is transferred from the MBE device through a glove box, and the sapphire substrate 2 is subjected to MOVPE! It was attached to the susceptor in the reaction chamber. Then, the sapphire substrate 2 was heated to 1000°C, H7 was added as a carrier gas at 2.51/min, and NH
, 51/min, trimethyl gallium (TMG) 2
N was supplied at a rate of 0 d/min for 60 minutes, with a concentration of approximately 10 μs.
Eight layers 4 of type GaN were formed. Next, the sapphire substrate 2 is heated to 900°C, and H2 is heated to 2.
5f/min, NH, 1.5I! /min, TMG 15rn
1/min, and diethyl zinc (DEZ) was supplied at a rate of 10-3 ml/min for 5 minutes to form one layer 5 made of ■-shaped GaN to a thickness of 1.0-. Next, aluminum electrodes 6.7 were deposited on the side walls of the 8-layer 4 and the top surface of the 1-layer 5 to form a light emitting diode. Microscopic photographs of cross-sections of the 8 layers 4 and 1 layer 5 of the light emitting diode 1 thus obtained and high-energy electron beam reflection diffraction (RHIEED) revealed that good crystallinity was obtained. . Furthermore, the emission peak spectrum of this light emitting diode 1 is 480 nm, and the emission intensity (on-axis brightness) is 10 mcd.
Met. According to the inventors' considerations, in the buffer layer 3 formed by MBE, the growth nuclei of GaN in the 8 layers 4 are more uniformly dispersed than in the buffer layer 3 grown by MOVPE. However, it is considered that for this reason, the single crystallinity of the 8-layer 4 and the 1-layer 5 was improved. Further, the buffer layer 3 was polycrystalline because it was formed by MBE at 500° C. on the sapphire substrate 2. In addition, the present inventors found that growing the buffer layer 3 as a polycrystalline material has a higher NF'4 and 1 layer 5 than growing a single crystalline buffer layer 3.
It was also found that the single crystallinity of For this reason, it is effective to grow the buffer layer 3 by MBE, and the growth temperature for making it polycrystalline is from room temperature to 500°C.
is desirable. In addition, in order to improve the single crystallinity of 8 layers 4 and 1 layer 5,
The thickness of the buffer layer 3 is preferably 100 to 1000. In the above embodiment, the 8 layers 4 and the 1 layer 5 are made of GaN, but they may be made of AlxGa+-xN.
図は本発明の具体的な一実施例に係る発光ダイオードの
構成を示した構成図である。
１ 発光ダイオード ２ サファイア基板３−バッファ
層 ４ Ｎ層 ５ １層
特許出願人 豊田合或株式会社
同 名古屋大学長
同 新技術開発事業団The figure is a configuration diagram showing the configuration of a light emitting diode according to a specific example of the present invention. 1 Light emitting diode 2 Sapphire substrate 3 - buffer layer 4 N layer 5 1st layer Patent applicant Toyota Goor Co., Ltd. Nagoya University President New Technology Development Corporation
Claims (1)
ｌＮ）から成るバッファ層と、 前記バッファ層上に成長したＮ型の窒化ガリウム系化合
物半導体（Ａｌ＿ｘＧａ＿１＿−＿ｘＮ；Ｘ＝０を含む
）からなるＮ層と、 前記Ｎ層上に成長したＩ型の窒化ガリウム系化合物半導
体（Ａｌ＿ｘＧａ＿１＿−＿ｘＮ；Ｘ＝０を含む）から
なるＩ層とを有し、 前記バッファ層を分子線エピタキシー法（ＭＢＥ）で成
長させたことを特徴とする窒化ガリウム系化合物半導体
発光素子。[Claims] A sapphire substrate, and an aluminum nitride (A) grown on the sapphire substrate.
an N layer made of an N-type gallium nitride compound semiconductor (Al_xGa_1_-_xN; including X=0) grown on the buffer layer; and an I-type gallium nitride compound semiconductor grown on the N layer. and an I layer made of a gallium nitride compound semiconductor (Al_xGa_1_-_xN; including X=0), wherein the buffer layer is grown by molecular beam epitaxy (MBE). Light emitting element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23288588A JP2829319B2 (en) | 1988-09-16 | 1988-09-16 | Gallium nitride based compound semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23288588A JP2829319B2 (en) | 1988-09-16 | 1988-09-16 | Gallium nitride based compound semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0281482A true JPH0281482A (en) | 1990-03-22 |
| JP2829319B2 JP2829319B2 (en) | 1998-11-25 |
Family
ID=16946368
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23288588A Expired - Lifetime JP2829319B2 (en) | 1988-09-16 | 1988-09-16 | Gallium nitride based compound semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2829319B2 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5237182A (en) * | 1990-11-29 | 1993-08-17 | Sharp Kabushiki Kaisha | Electroluminescent device of compound semiconductor with buffer layer |
| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
| WO1994003931A1 (en) * | 1992-08-07 | 1994-02-17 | Asahi Kasei Kogyo Kabushiki Kaisha | Nitride based semiconductor device and manufacture thereof |
| US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| AU679277B2 (en) * | 1994-08-22 | 1997-06-26 | Korea Research Institute Of Chemical Technology | A process for growth of gallium nitride |
| US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US5764673A (en) * | 1995-09-25 | 1998-06-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor light emitting device |
| EP1039555A1 (en) * | 1999-03-05 | 2000-09-27 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| JP2001015803A (en) * | 1999-06-29 | 2001-01-19 | Showa Denko Kk | AlGaInP LIGHT EMITTING DIODE |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US6939733B2 (en) | 1999-03-31 | 2005-09-06 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method of producing the same |
| JP2009021619A (en) * | 1991-03-18 | 2009-01-29 | Trustees Of Boston Univ | Method for manufacturing semiconductor device by exposing sapphire substrate to active nitrogen and semiconductor device |
| CN105390578A (en) * | 2015-12-04 | 2016-03-09 | 天津三安光电有限公司 | Nitride bottom layer and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| JP2002075880A (en) | 2000-09-01 | 2002-03-15 | Sanyo Electric Co Ltd | Method for forming nitride-based semiconductor layer and method for manufacturing nitride-based semiconductor device |
-
1988
- 1988-09-16 JP JP23288588A patent/JP2829319B2/en not_active Expired - Lifetime
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| US6249012B1 (en) | 1990-02-28 | 2001-06-19 | Toyoda Gosei Co., Ltd. | Light emitting semiconductor device using gallium nitride group compound |
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| US6593599B1 (en) | 1990-02-28 | 2003-07-15 | Japan Science And Technology Corporation | Light-emitting semiconductor device using gallium nitride group compound |
| US6607595B1 (en) | 1990-02-28 | 2003-08-19 | Toyoda Gosei Co., Ltd. | Method for producing a light-emitting semiconductor device |
| US5733796A (en) * | 1990-02-28 | 1998-03-31 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
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| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
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| JP2009021619A (en) * | 1991-03-18 | 2009-01-29 | Trustees Of Boston Univ | Method for manufacturing semiconductor device by exposing sapphire substrate to active nitrogen and semiconductor device |
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| USRE36747E (en) * | 1992-07-23 | 2000-06-27 | Toyoda Gosei Co., Ltd | Light-emitting device of gallium nitride compound semiconductor |
| US5408120A (en) * | 1992-07-23 | 1995-04-18 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| WO1994003931A1 (en) * | 1992-08-07 | 1994-02-17 | Asahi Kasei Kogyo Kabushiki Kaisha | Nitride based semiconductor device and manufacture thereof |
| AU679277B2 (en) * | 1994-08-22 | 1997-06-26 | Korea Research Institute Of Chemical Technology | A process for growth of gallium nitride |
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| EP1039555A1 (en) * | 1999-03-05 | 2000-09-27 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| US6939733B2 (en) | 1999-03-31 | 2005-09-06 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method of producing the same |
| JP2001015803A (en) * | 1999-06-29 | 2001-01-19 | Showa Denko Kk | AlGaInP LIGHT EMITTING DIODE |
| CN105390578A (en) * | 2015-12-04 | 2016-03-09 | 天津三安光电有限公司 | Nitride bottom layer and preparation method thereof |
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| JP2829319B2 (en) | 1998-11-25 |
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